N-Channel QFET(R) MOSFET 1000 V, 1.6 A, 9 Features Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 1.6 A, 1000 V, RDS(on) = 9 (Max.)@ VGS = 10 V, ID = 0.8 A * Low Gate Charge ( Typ. 12 nC) * Low Crss ( Typ. 5 pF) * 100% Avalanche Tested * RoHS Compliant D D G S I-PAK D-PAK G D G S S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted Parameter FQD2N100TM / FQU2N100TU 1000 Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR EAR dv/dt PD TJ, TSTG TL - Pulsed (Note 1) Unit V 1.6 A 1.0 A 6.4 A 30 V (Note 2) 160 mJ Avalanche Current (Note 1) 1.6 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 5.0 5.5 2.5 mJ V/ns W 50 0.4 -55 to +150 W W/C C 300 C (Note 3) Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA FQD2N100TM FQU2N100TU Parameter Thermal Resistance, Junction to Case, Max. 2.5 Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 110 2 Thermal Resistance, Junction to Ambient (* 1 in pad of 2 oz copper), Max. (c)2004 Semiconductor Components Industries, LLC. October-2017,Rev.3 Unit o C/W 50 Publication Order Number: FQU2N100/D FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET FQD2N100 / FQU2N100 Device Marking FQD2N100 Device FQD2N100TM FQU2N100 FQU2N100TU Electrical Characteristics Symbol Package DPAK Reel Size Tape Width 16 mm 330 mm IPAK - Quantity 2500 - 70 TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 1000 -- -- V -- 0.976 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C IDSS Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0 V -- -- 10 A VDS = 800 V, TC = 125C -- -- 100 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.8 A -- 7.1 9 gFS Forward Transconductance VDS = 50 V, ID = 0.8 A -- 1.9 -- S -- 400 520 pF -- 40 52 pF -- 5 6.5 pF -- 13 35 ns -- 30 70 ns -- 25 60 ns -- 35 80 ns -- 12 15.5 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 25 V, VGS = 0 V, f = 1.0 MHz VDD = 500 V, ID = 2.0 A, RG = 25 (Note 4) VDS = 800 V, ID = 2.0 A, VGS = 10 V (Note 4) -- 2.5 -- nC -- 6.5 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 ISM -- -- 6.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.6 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 520 -- ns Qrr Reverse Recovery Charge -- 2.3 -- C VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/s Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Essentially independent of operating temperature www.onsemi.com 2 FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 0 ID, Drain Current [A] 10 ID , Drain Current [A] Top : -1 10 150 0 10 25 -55 Notes : 1. VDS = 50V 2. 250s Pulse Test Notes : 1. 250s Pulse Test 2. TC = 25 -1 -2 10 -1 0 10 10 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics VGS , Gate-Source Voltage [V] 8 10 Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 20 15 VGS = 10V 0 10 10 VGS = 20V 5 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test Note : TJ = 25 0 0 1 2 3 4 -1 10 ID , Drain Current [A] 0.2 1.2 1.4 VDS = 200V 10 300 Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 100 VGS , Gate-Source Voltage [V] Capacitance [pF] Coss 200 1.0 12 Ciss 500 400 0.8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 600 0.6 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 700 0.4 VDS = 500V VDS = 1000V 8 6 4 2 Note : ID = 1.6 A 0 -1 10 0 0 10 1 10 0 2 6 8 10 12 14 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 4 Figure 6. Gate Charge Characteristics www.onsemi.com 3 FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.8 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 10 1.5 1 ms 0 10 10 ms DC -1 10 Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area 10 0 75 100 125 TC, Case Temperature [] VDS, Drain-Source Voltage [V] ZJC(t), Thermal Response [oC/W] ID, Drain Current [A] 100 s 10 s ID, Drain Current [A] 1 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 0 .2 N o te s : 1 . Z J C ( t) = 2 .5 /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 t1 s i n g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve www.onsemi.com 4 10 1 150 FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Typical Characteristics FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Figure 12. Gate Charge Test Circuit & Waveform 50K 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD DUT ID (t) VDS (t) VDD tp tp www.onsemi.com 5 Time DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD Body Diode Forward Voltage Drop www.onsemi.com 6 VDD FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Mechanical Dimensions TO-252 3L (DPAK) Figure 16. TO252 (D-PAK), Molded, 3 Lead, Option AA&AB Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. Dimension in Millimeters www.onsemi.com 7 FQD2N100 / FQU2N100 -- N-Channel QFET(R) MOSFET Mechanical Dimensions TO-251 3L (IPAK) Figure 17. TO-251 (I-PAK) Molded, 3 Lead Option AA Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specif-ically the warranty therein, which covers ON Semiconductor products. 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