SFH 4200
SFH 4205
Leistungsstarke IR-Lumineszenzdiode
High Power Infrared Emitter
Lead (Pb) Free Product - RoHS Compliant
SFH 4200 SFH 4205
Nicht für Neuentwicklungen / Not for new designs
2008-01-14 1
Wesentliche Merkmale
• Leistungsstarke GaAs-LED (35mW)
• Hoher Wirkunsgrad bei kleinen Strömen
• Homogene Abstrahlung
• Typische Peakwellenlänge 950nm
Anwendungen
• Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
(IR Tastatur, Joystick, Multimedia)
• Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
• Alarm- und Sicherungssysteme
• IR-Scheinwerfer für Kameras
Typ
Type
Bestellnummer
Ordering Code
Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
SFH 4200 Q65110A2494 ≥ 4 (typ. 10)
SFH 4205 Q65110A2498 ≥ 4 (typ. 10)
Features
• High Power GaAs-LED (35mW)
• High Efficiency at low currents
• Homogeneous Radiation Pattern
• Typical peak wavelength 950nm
Applications
• High data transmission rate up to 100 Mbaud
(IR keyboard, Joystick, Multimedia)
• Analog and digital Hi-Fi audio and video signal
transmission
• Alarm and safety equipment
• IR spotlight for cameras
2008-01-14 2
SFH 4200, SFH 4205
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage
VR3 V
Vorwärtsgleichstrom
Forward current
IF100 mA
Stoßstrom, tp = 100 µs, D = 0
Surge current
IFSM 2.2 A
Verlustleistung
Power dissipation
Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 16 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 16 mm2 each
Wärmewiderstand Sperrschicht - Lötstelle bei
Montage auf Metall-Block
Thermal resistance junction - soldering point,
mounted on metal block
RthJA
RthJS
450
200
K/W
K/W
SFH 4200, SFH 4205
2008-01-14 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle
ϕ± 60 Grad
deg.
Aktive Chipfläche
Active chip area
A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimensions of the active chip area
L × B
L × W
0.3 × 0.3 mm²
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Ω
tr, tf10 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.3)
V
V
Sperrstrom
Reverse current
VR = 3 V
IR0.01 (≤ 10) µA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe typ 35 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.44 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA
TCV– 1.5 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA
TCλ+ 0.2 nm/K
2008-01-14 4
SFH 4200, SFH 4205
Strahlstärke Ie in Achsrichtung1)
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter
Symbol Werte
Values
Einheit
Unit
-P -Q -R
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
4
8
6.3
12.5
10
20
mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ 40 60 80 mW/sr
1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) /
Only one group in one packing unit (variation lower 2:1)
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
0˚10˚20˚40˚ 30˚
OHL01660
50˚
60˚
70˚
80˚
90˚
100˚
0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
SFH 4200, SFH 4205
2008-01-14 5
Relative Spectral Emission
Irel = f (λ)
Forward Current IF = f (VF)
single pulse, tp = 20 µs
OHF00777
nm800
Ι
erel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Radiant Intensity
Single pulse, tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
Ι
Ι
10 40
10 10 110 23
10
10 -3
10 -2
10
10 -1
0
10 2
OHF00040
10
-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10
-4
10
-3
10
-2
10
-1
10
0
10
1 2
10s
0.1
0.2
0.5
1
=
-1
10
5
1
10
10
0
5
A
Max. Permissible Forward Current
IF = f (TA), RthJA = 450 K/W
OHR00883
0
F
Ι
0
20
40
60
80
100
120
20 40 60 80 100 120
mA
˚C
T
A
R
thjA
= 450 K/W
2008-01-14 6
SFH 4200, SFH 4205
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
SFH 4200
GPLY6724
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Cathode marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
A
C
SFH 4205
GPLY6880
(R1)
Cathode marking
Cathode Anode
(2.4 (0.094))
2.8 (0.110)
2.4 (0.094)
4.2 (0.165)
3.8 (0.150)
0.9 (0.035)
1.1 (0.043)
spacing
2.54 (0.100)
0.7 (0.028)
(2.85 (0.112))
(1.4 (0.055))
(0.3 (0.012))
3.4 (0.134)
3.8 (0.150)
3.8 (0.150)
4.2 (0.165)
(2.9 (0.114))
AC
SFH 4200, SFH 4205
2008-01-14 7
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
OHLPY970
4.5 (0.177)
2.6 (0.102)
1.5 (0.059)
Cu-area > 16 mm
Cu-Fläche > 16 mm
2
2
Solder resist
Lötstopplack
4.5 (0.177)
1.5 (0.059)
2.6 (0.102)
Padgeometrie für
improved heat dissipation
verbesserte Wärmeableitung
Paddesign for
SFH 4200
3.7 (0.146)
1.2 (0.047)
3.0 (0.118)
Cu-area > 16 mm
Cu-Fläche > 16 mm
Paddesign
for improved
heat dissipation
Wärmeableitung
für verbesserte
Padgeometrie
Lötstopplack
Solder resist
OHLPY965
2
2
SFH 4205
2008-01-14 8
SFH 4200, SFH 4205
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
min. condition for IR Reflow Soldering:
solder point temperature ≥ 235 °C for at least 10 sec.
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
SFH 4200, SFH 4205
2008-01-14 9
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
