Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter Lead (Pb) Free Product - RoHS Compliant SFH 4200 SFH 4205 SFH 4200 SFH 4205 Nicht fur Neuentwicklungen / Not for new designs Wesentliche Merkmale Features * * * * * * * * Leistungsstarke GaAs-LED (35mW) Hoher Wirkunsgrad bei kleinen Stromen Homogene Abstrahlung Typische Peakwellenlange 950nm High Power GaAs-LED (35mW) High Efficiency at low currents Homogeneous Radiation Pattern Typical peak wavelength 950nm Anwendungen Applications * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Alarm- und Sicherungssysteme * IR-Scheinwerfer fur Kameras * High data transmission rate up to 100 Mbaud (IR keyboard, Joystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Alarm and safety equipment * IR spotlight for cameras Typ Type Bestellnummer Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Ordering Code Radiant Intensity Grouping1) Ie (mW/sr) SFH 4200 Q65110A2494 4 (typ. 10) SFH 4205 Q65110A2498 4 (typ. 10) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2008-01-14 1 SFH 4200, SFH 4205 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 100 C Sperrspannung Reverse voltage VR 3 V Vorwartsgleichstrom Forward current IF 100 mA Stostrom, tp = 100 s, D = 0 Surge current IFSM 2.2 A Verlustleistung Power dissipation Ptot 180 mW 450 K/W 200 K/W Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block 2008-01-14 2 SFH 4200, SFH 4205 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms peak 950 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms 40 nm Abstrahlwinkel Half angle 60 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimensions of the active chip area LxB LxW 0.3 x 0.3 mm 10 ns VF VF 1.5 ( 1.8) 3.2 ( 4.3) V V Sperrstrom Reverse current VR = 3 V IR 0.01 ( 10) A Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 35 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.44 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 1.5 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.2 nm/K Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2008-01-14 3 SFH 4200, SFH 4205 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values -P Einheit Unit -Q -R Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max 4 8 6.3 12.5 10 20 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Ie typ 40 60 80 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one group in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 50 OHL01660 1.0 0.8 0.6 60 0.4 70 0.2 80 0 90 100 1.0 2008-01-14 0.8 0.6 0.4 0 20 40 60 80 4 100 120 SFH 4200, SFH 4205 Relative Spectral Emission Irel = f () Radiant Intensity Single pulse, tp = 20 s OHF00777 100 Ie = f (IF) Ie 100 mA OHF00809 10 2 erel OHR00883 120 F mA e 100 e (100 mA) 80 Max. Permissible Forward Current IF = f (TA), RthJA = 450 K/W 80 10 0 60 R thjA = 450 K/W 60 10 -1 40 40 10 20 0 -2 20 800 850 900 950 1000 10 -3 10 0 nm 1100 10 1 10 2 10 3 mA 10 4 F Forward Current IF = f (VF) single pulse, tp = 20 s F OHF00784 10 4 mA 10 Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter IF 101 A 5 3 OHF00040 t D = TP 10 2 tP IF T D= 10 1 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 100 10 0 5 10 -1 10 -2 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 tp VF 2008-01-14 5 0 0 20 40 60 80 100 C 120 TA SFH 4200, SFH 4205 Mazeichnung Package Outlines SFH 4200 2.1 (0.083) 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 1.7 (0.067) 0.1 (0.004) (typ.) 0.9 (0.035) 0.7 (0.028) 3.7 (0.146) 3.3 (0.130) 41 3.4 (0.134) 3.0 (0.118) (2.4) (0.095) 2.1 (0.083) A Cathode marking 0.5 (0.020) 1.1 (0.043) C 0.18 (0.007) 0.12 (0.005) 0.6 (0.024) 0.4 (0.016) GPLY6724 SFH 4205 1.1 (0.043) Anode (1.4 (0.055)) (R1) 4.2 (0.165) 3.8 (0.150) C A GPLY6880 Mae in mm (inch) / Dimensions in mm (inch). 2008-01-14 3.8 (0.150) 3.4 (0.134) (2.9 (0.114)) Cathode marking (2.85 (0.112)) 0.9 (0.035) (0.3 (0.012)) Cathode 2.54 (0.100) spacing 0.7 (0.028) 4.2 (0.165) 3.8 (0.150) 2.4 (0.094) 2.8 (0.110) (2.4 (0.094)) 6 SFH 4200, SFH 4205 Empfohlenes Lotpaddesign Recommended Solder Pad Reflow Loten Reflow Soldering SFH 4200 4.5 (0.177) 2.6 (0.102) 1.5 (0.059) 1.5 (0.059) 4.5 (0.177) 2.6 (0.102) Padgeometrie fur verbesserte Warmeableitung Lotstopplack Solder resist Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 OHLPY970 3.7 (0.146) 3.0 (0.118) SFH 4205 1.2 (0.047) Padgeometrie fur verbesserte Warmeableitung Paddesign for improved heat dissipation Cu-Flache > 16 mm 2 Cu-area > 16 mm 2 Lotstopplack Solder resist OHLPY965 Mae in mm (inch) / Dimensions in mm (inch). 2008-01-14 7 SFH 4200, SFH 4205 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering OHLA0687 300 Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile C T Vorbehandlung nach JEDEC Level 2 Preconditioning acc. to JEDEC Level 2 (nach J-STD-020C) (acc. to J-STD-020C) 255 C 240 C 250 C 260 C +0 -5 C 245 C 5 C C 235 C +5 -0 C 217 C 10 s min 200 30 s max Ramp Down 6 K/s (max) 150 100 s max 120 s max 100 min. condition for IR Reflow Soldering: solder point temperature 235 C for at least 10 sec. Ramp Up 3 K/s (max) 50 25 C 0 0 50 100 150 200 250 s 300 t Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 t 2008-01-14 8 s 250 SFH 4200, SFH 4205 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-01-14 9