IRFHM3911TRPbF HEXFET(R) Power MOSFET VDSS 100 V RDS(on) max (@VGS = 10V) 115 m Qg (typical) 17 nC 11 A ID (@TC (Bottom) = 25C) S S S G D D D D D PQFN 3.3X3.3 mm Applications POE+ Power Sourcing Equipment Switch Features Large Safe Operating Area (SOA) Low Thermal Resistance to PCB Low Profile (<1.05mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Package Type IRFHM3911PbF PQFN 3.3mm x 3.3mm Benefits Increased Ruggedness Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM3911TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage 20 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 3.2 ID @ TC(Bottom) = 25C Continuous Drain Current, VGS @ 10V 11 ID @ TC(Bottom) = 100C Continuous Drain Current, VGS @ 10V 6.6 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25C Power Dissipation 2.8 PD @TC(Bottom) = 25C Power Dissipation 29 ID @ TC = 25C A 20 36 Linear Derating Factor 0.023 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range W W/C C Notes through are on page 9 1 2016-2-23 IRFHM3911TRPbF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient VGS(th) IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 100 --- --- 2.0 --- --- --- --- --- 20 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 111 92 --- -7.6 --- --- --- --- --- 17 2.5 1.4 5.4 7.7 6.8 5.9 3.8 5.0 5.8 16 5.1 760 73 13 Max. --- --- 115 4.0 --- 20 250 100 -100 --- 26 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Units V mV/C m V mV/C A nA S nC nC Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 6.3A VDS = VGS, ID = 35A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ=125C VGS = 20V VGS = -20V VDS = 25V, ID = 6.3A VDS = 50V VGS = 10V ID = 6.3A VDS = 16V, VGS = 0V ns VDD = 50V, VGS = 10V ID = 6.3A RG=1.8 pF VGS = 0V VDS = 50V = 1.0MHz Typ. --- --- Min. Typ. Max. --- --- 11 --- --- 36 --- --- --- --- 47 381 1.3 71 571 Max. 41 6.3 Units Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 6.3A, VGS = 0V TJ = 25C, IF = 6.3A, VDD = 50V di/dt = 500A/s D A G S V ns nC Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Typ. --- Max. 4.3 Units --- 40 C/W RJA Junction-to-Ambient --- 45 RJA (<10s) Junction-to-Ambient --- 31 2 2016-2-23 IRFHM3911TRPbF 100 10 BOTTOM TOP 1 60s PULSE WIDTH Tj = 25C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.0V 4.5V 4.0V 10 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.0V 4.5V 4.0V 4.0V 1 60s PULSE WIDTH 4.0V 0.1 Tj = 150C 0.1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 2.5 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 Fig 2. Typical Output Characteristics 100 TJ = 150C 1 TJ = 25C VDS = 50V 60s PULSE WIDTH 0.1 ID = 6.5A VGS = 10V 2.0 1.5 1.0 0.5 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 10000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED C rss = Cgd VGS, Gate-to-Source Voltage (V) ID= 6.3A C oss = C ds + C gd 1000 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Ciss Coss Crss 100 10 12.0 VDS= 80V 10.0 VDS= 20V VDS= 50V 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 1 0 5 10 15 20 25 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-23 IRFHM3911TRPbF 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 TJ = 150C 10 TJ = 25C 1 10 100sec 10msec 1 1msec OPERATION IN THIS AREA LIMITED BY R (on) DS 0.1 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.01 0.1 0.4 0.6 0.8 1.0 0.1 1.2 1 10 100 1000 VDS, Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 12 VGS(th) Gate threshold Voltage (V) 4.5 10 -ID, Drain Current (A) DC 8 6 4 2 4.0 3.5 3.0 ID = 35A ID = 250A 2.5 ID = 1.0mA ID = 1.0A 2.0 1.5 0 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TC , Case Temperature (C) TJ , Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage Thermal Response ( ZthJC ) C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-23 400 200 EAS , Single Pulse Avalanche Energy (mJ) ( ) RDS(on), Drain-to -Source On Resistance m IRFHM3911TRPbF ID = 6.3A 350 300 250 TJ = 125C 200 150 TJ = 25C 100 ID 1.4A 2.7A BOTTOM 6.3A TOP 160 120 80 40 0 50 4 8 12 16 25 20 50 75 100 125 150 Starting TJ , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 12. On- Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 10 1 0.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 125C. 0.01 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 2016-2-23 IRFHM3911TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 Qgd Qgodr Fig 19. Gate Charge Waveform 2016-2-23 IRFHM3911TRPbF PQFN 3.3 x 3.3 Outline "C" Package Details 8 7 6 5 1 2 3 4 3 4 6 5 1 8 2 7 PQFN 3.3 x 3.3 Outline "G" Package Details 8 7 6 5 #1 2 3 4 #1 2 3 4 8 7 6 5 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 2016-2-23 IRFHM3911TRPbF PQFN 3.3 x 3.3 Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX ?YWW? XXXXX PIN 1 IDENTIFIER PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23 IRFHM3911TRPbF Qualification Information Qualification Level Moisture Sensitivity Level RoHS Compliant Industrial (per JEDEC JESD47F guidelines) PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 2.06mH, RG = 50, IAS = 6.3A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 20A by source bonding technology. 9 2016-2-23 IRFHM3911TRPbF Revision History Date Comments 6/5/2014 Updated schematic on page 1 Updated tape and reel on page 8 7/1/2014 Remove "SAWN" package outline on page 7. 2/23/2016 Updated datasheet with corporate template Updated package outline to reflect the PCN # (241-PCN30-Public) for "Option C" and "Option G" on page 7. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. 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