HEXFET® Power MOSFET
PD - 95477
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
7/16/04
SO-8
VDSS = -30V
RDS(on) = 0.25Ω
IRF9953PbF
Description
Recommended upgrade: IRF7306 or IRF7316
Lower profile/smaller equivalent: IRF7506
Symbol Maximum Units
Drain-Source Voltage VDS -30
Gate-Source Voltage VGS ± 20
TA = 25°C -2.3
TA = 70°C -1.8
Pulsed Drain Current IDM -10
Continuous Source Current (Diode Conduction) IS1.6
TA = 25°C 2.0
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 57 mJ
Avalanche Current IAR -1.3 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dtdv/dt -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Thermal Resistance Ratings
Parameter Symbol Limit Units
Maximum Junction-to-AmbientRθJA 62.5 °C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
ID
P
D
V
W
D1
D1
D
2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
lGeneration V Technology
lUltra Low On-Resistance
lDual P-Channel MOSFET
lSurface Mount
lVery Low Gate Charge and
Switching Losses
lFully Avalanche Rated
lLead-Free
IRF9953PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 0.82 1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V
trr Reverse Recovery Time 27 54 ns TJ = 25°C, IF = -1.25A
Qrr Reverse RecoveryCharge 31 62 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
16
1.3
A
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 67mH
RG = 25Ω, IAS = -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.015 V/°C Reference to 25°C, ID = -1mA
0.165 0.250 VGS = 10V, ID = -1.0A
0.290 0.400 VGS = 4.5V, ID = -0.50A
VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance -2.4 S VDS = -15V, ID = -2.3A
-2.0 VDS = 24V, VGS = 0V
-25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage 100 VGS = -20V
Gate-to-Source Reverse Leakage -100 VGS = 20V
QgTotal Gate Charge 6.1 12 ID = -2.3A
Qgs Gate-to-Source Charge 1.7 3.4 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge 1.1 2.2 VGS = -10V, See Fig. 10
td(on) Turn-On Delay Time 9.7 19 VDD = -10V
trRise Time 14 28 ID = -1.0A
td(off) Turn-Off Delay Time 20 40 RG = 6.0Ω
tfFall Time 6.9 14 RD = 10Ω
Ciss Input Capacitance 190 VGS = 0V
Coss Output Capacitance 120 pF VDS = -15V
Crss Reverse Transfer Capacitance 61 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
IRF9953PbF
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
0.1
1
10
100
0.1 1 10
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
0.1
1
10
100
0.1 1 10
D
DS
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
-3.0V
VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
20µs PULSE WIDTH
T = 150°C
J
0.1
1
10
100
3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
IRF9953PbF
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-10V
-1.0A
0.0
0.5
1.0
1.5
2.0
2.5
0.0 1.0 2.0 3.0 4.0 5.0
A
-I , Drain Current (A)
D
V = -10V
V = -4.5V
GS
GS
R DS(on) , Drain-to-Source On Resistance ( Ω )
0.00
0.20
0.40
0.60
0.80
0 3 6 9 12 15
A
GS
I = -2.3A
D
-V , Gate-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance ( Ω )
25 50 75 100 125 150
0
30
60
90
120
150
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-0.58A
-1.0A
-1.3A
IRF9953PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0246810
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-2.3A
V =-10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF9953PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B ASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MILLIMETERSINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BAS IC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P R I N T
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O JE DE C OU T LI NE MS -012 AA.
NOT E S :
1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIME TE R
3. DI ME N S IONS ARE S H OWN IN MIL L I ME T E R S [I NCH E S ] .
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS .
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RU SIONS .
MOLD PROT RUSIONS NOT T O EXCEE D 0.25 [.010].
7 DIMENS ION IS T HE LENGTH OF L EAD FOR SOLDER ING T O
A S UBS T RATE .
MOLD PROT RUSIONS NOT T O EXCEE D 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INT ERNAT IONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF 7101 (MOS FE T )
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S I T E CODE
IRF9953PbF
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
