Data Sheet Switching Diode IMN11 Dimensions (Unit : mm) Applications Ultra high speed switching Land size figure (Unit : mm) 19 2.90.2 1.0MIN. 1.6 (2) (1) 0.80.1 1.90.2 Construction Silicon epitaxial planar 0.95 0.30.6 00.1 (3) 0.95 0.95 2.4 (6) 0.2 0.1 (5) 2.80.2 (4) Features 1) Small mold type. (SMD6) 2) High reliability. 0.95 0.150.1 0.06 0.30.1 Each lead has same dimension 0.05 0.6 0.35 0.35 0.45 0.45 0.8MIN. SMD6 1.10.2 0.1 Structure ROHM : SMD6 JEDEC :S0T-457 JEITA : SC-74 week code 1Pin Mark Taping specifications (Unit : mm) 1.550.1 0 2.00.05 0.30.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) VRM VR Reverse voltage (DC) IFM Forward current (Single) Average rectified forward current (single) Io Isurge Surge current (t=1us) (Single) Power dissipation (TOTAL)(*1) Pd Junction temperature Tj Storage temperature Tstg (*1) Not exceed 200mW per element. Electrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time 1.05MIN 4.00.1 3.20.1 Limits 3.20.1 8.00.2 5.50.2 00.5 3.20.1 3.50.05 1.750.1 4.00.1 1.350.1 Unit V V mA mA A mW C C 80 80 300 100 4 300 150 55 to 150 Min. Typ. Max. - - 1.2 V IF=100mA Ct - - 0.1 3.5 A pF trr - - 4 ns VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 IR www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/2 Unit Conditions 2011.06 - Rev.B Data Sheet IMN11 Ta=150 100 10000 Ta=75 Ta=125 10 Ta=25 Ta=150 Ta=-25 1 1000 Ta=75 100 Ta=25 10 Ta=-25 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 0.1 0 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 80 0 90 930 920 910 AVE:921.7m 70 60 50 AVE:9.655nA 40 30 20 900 1.3 1.2 1.1 1 0.9 0.7 0.6 0 0.5 Ct DISPERSION MAP IR DISPERSION MAP 10 10 5 AVE:3.50A 8 7 6 5 4 3 2 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25 VR=6V IF=5mA RL=50 n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 100 Rth(j-c) Mounted on epoxy board IM=1mA 10 1ms 1 0.001 100 9 Rth(j-a) IF=10mA time 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/2 8 7 6 5 4 3 AVE:2.54kV AVE:0.97kV 2 1 300us 0.01 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 AVE:1.040pF 0.8 10 VF DISPERSION MAP 20 20 Ta=25 VR=6V f=1MHz n=10pcs 1.4 Ta=25 VR=80V n=10pcs 80 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) Ta=25 IF=100mA n=30pcs 940 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 1.5 100 950 FORWARD VOLTAGE:VF(mV) 1 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) f=1MHz Ta=125 0 1000 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2011.06 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A