Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
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▼ Simple Drive Requirement BVDSS 60V
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▼ Lower Gate Charge RDS(ON) 40mΩ
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▼ Fast Switching Characteristic ID6.9A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 50 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current35.5
Pulsed Drain Current130
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
200517041
AP9475M
Rating
60
±25
6.9
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
SSSG
DDDD
SO-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.073 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=6A - - 40 mΩ
VGS=4.5V, ID=4A - - 50 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 10 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=60V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±25V - - ±100 nA
QgTotal Gate Charge2ID=6A - 19 30 nC
Qgs Gate-Source Charge VDS=48V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC
td(on) Turn-on Delay Time2VDS=30V - 11 - ns
trRise Time ID=1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 35 - ns
tfFall Time RD=30Ω-10-ns
Ciss Input Capacitance VGS=0V - 1670 2670 pF
Coss Output Capacitance VDS=25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 116 - pF
RgGate Resistance f=1.0MHz - 1.58 - Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=6A, VGS=0V, - 34 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 50 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on min. copper pad.
AP9475M
AP9475M
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
0
20
40
60
80
100
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
6.0V
5.0V
4.5V
VG=3.0V
0
10
20
30
40
50
60
70
80
0123456
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
10V
6.0V
5.0V
4.5V
VG=3.0V
TA=150oC
32
34
36
38
40
42
44
46
357911
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
Ω
Ω
Ω
)
I
D=4A
TA=25
℃
℃℃
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=6A
VG=10V
0.50
0.75
1.00
1.25
1.50
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
1
2
3
4
5
6
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP9475M
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
100
1000
10000
1 5 9 1317212529
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
14
0 1020304050
QG , Total Gate Charge (nC)
VGS , Gate to Source Voltage (V)
VDS =30V
VDS =38V
VDS =48V
ID=6A
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Thermal Response (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 125℃
℃℃
℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100 1000
VDS , Drain-to-Source Voltage (V)
ID (A)
1ms
10ms
100ms
1s
DC
TA=25 oC
Single Pulse
