AP9475M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower Gate Charge D D D Fast Switching Characteristic BVDSS 60V RDS(ON) 40m ID 6.9A G SO-8 S S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units 60 V 25 V 3 6.9 A 3 5.5 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 30 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 50 /W 200517041 AP9475M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Units 60 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.073 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 40 m VGS=4.5V, ID=4A - - 50 m VDS=VGS, ID=250uA 1 - 3 V VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS VDS=10V, ID=6A - 10 - S o VDS=60V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=48V, VGS=0V - - 25 uA Gate-Source Leakage VGS=25V - - 100 nA ID=6A - 19 30 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=1mA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 10 - nC VDS=30V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 35 - ns tf Fall Time RD=30 - 10 - ns Ciss Input Capacitance VGS=0V - 1670 2670 pF Coss Output Capacitance VDS=25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 116 - pF Rg Gate Resistance f=1.0MHz - 1.58 - Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=6A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 50 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on min. copper pad. AP9475M 80 100 10V 6.0V o T A = 150 o C 70 10V 6.0V 80 60 60 ID , Drain Current (A) ID , Drain Current (A) T A =25 C 5.0V 4.5V 40 5.0V 4.5V 50 40 30 20 20 V G =3.0V 10 V G =3.0V 0 0 0 1 2 3 4 5 0 6 1 V DS , Drain-to-Source Voltage (V) 3 4 5 6 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 46 1.6 ID=4A T A =25 ID=6A V G =10V 1.4 Normalized R DS(ON) 44 42 RDS(ON) (m ) 2 40 38 1.2 1.0 36 0.8 34 0.6 32 3 5 7 9 -50 11 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.50 6 Normalized VGS(th) (V) 5 IS(A) 4 3 o o T j =150 C T j =25 C 2 1.25 1.00 0.75 1 0.50 0 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode 150 AP9475M f=1.0MHz 10000 14 ID=6A VGS , Gate to Source Voltage (V) 12 V DS = 30 V V DS = 38 V V DS = 48 V C iss C (pF) 10 8 1000 6 4 2 C oss C rss 100 0 0 10 20 30 40 1 50 5 9 Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 1ms ID (A) 13 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 1s 0.1 T A =25 o C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125 /W 0.01 0.001 0.1 1 10 100 1000 0.0001 0.001 0.01 Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Fig 12. Gate Charge Waveform Q