TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
1
20 -
40 GHz X2 Frequency Multiplier TGC1430F
Key Features and Performance
•
0.25um pHEMT Technology
•
20 -
40 GHz Output Frequencies
•
10 -
20 GHz Fundamental Frequencies
•
-12 +/-
2dB Conversion Gain
•
18 dBm Input Drive Optimum
•
25dB Fundamental Isolation
Note: Datasheet is subject to change without notice.
Primary Applications
•
Point-to-Point Radio
•
Point-to-Multipoint Communications
Chip Dimensions 1.50 mm x 1.50 mm
Conversion Gain vs
Input Frequency (Input @ 17.5dBm) Conversion Gain and Fundamental Isolation
for 27 -
32 GHz Output
Fundamental Isolation
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0
Input Frequency (GHz)
Conversion Gain (dB)
@17. 5dBm
0
5
10
15
20
25
30
35
40
45
6 8 10 12 14 16 18 20 22
Input Frequency (GHz)
Fundamental Isolation (dB)
@17.5dBm
-25
-20
-15
-10
-5
0
13.5 14.0 14.5 15.0 15.5 16.0
Input Frequency (GHz)
Conversion Gain (dB)
10
15
20
25
30
35
Fund. Isolation
(
dB
)
Input Drive of +17.5dB
m
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
2
TGC1430F
GaAs
MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Mechanical Drawing
.00 [0.000]
.09 [0.004]
1.40 [0.055]
1.49 [0.059]
.00 [0.000]
1.12 [0.044]
.84 [0.033]
1.49 [0.059]
Units: millimeters [inches]
Thickness: 0.10 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pads.
Chip size tolerance: ±0.05 [0.002]
RF ground through backside
Bond Pad #1
Bond Pad #2
RF Input
RF Output
0.10 x 0.20
0.10 x 0.20
[0.004 x 0.008]
[0.004 x 0.008]
1
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
3
Recommended Assembly Drawing
Attach 2 TFNs
and MMIC to carrier plate as
shown using conductive epoxy.
Bond 4 wires as shown using minimum length.
RFin RFout
GaAs
MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGC1430F
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Product Data Sheet
August 5, 2008
4
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 3000C (30 seconds max).
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 2000C.
TGC1430F
