Product Data Sheet August 5, 2008 20 - 40 GHz X2 Frequency Multiplier TGC1430F Key Features and Performance * * * * * * 0.25um pHEMT Technology 20 - 40 GHz Output Frequencies 10 - 20 GHz Fundamental Frequencies -12 +/- 2dB Conversion Gain 18 dBm Input Drive Optimum 25dB Fundamental Isolation Primary Applications * * Chip Dimensions 1.50 mm x 1.50 mm 0.0 Conversion Gain (dB) -10.0 -15.0 -20.0 @17.5dBm -25.0 0 35 -5 30 -10 25 -15 20 -20 15 Input Drive of +17.5dBm -30.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 Input Frequency (GHz) Conversion Gain vs Input Frequency (Input @ 17.5dBm) -25 13.5 14.0 14.5 15.0 Input Frequency (GHz) 15.5 10 16.0 Conversion Gain and Fundamental Isolation for 27 - 32 GHz Output Fundamental Isolation (dB) 45 40 35 30 25 20 15 10 5 0 6 8 10 12 14 16 18 Input Frequency (GHz) 20 22 @17.5dBm Fundamental Isolation Note: Datasheet is subject to change without notice. 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Fund. Isolation (dB) Conversion Gain (dB) -5.0 Point-to-Point Radio Point-to-Multipoint Communications Product Data Sheet August 5, 2008 TGC1430F 1.40 [0.055] Mechanical Drawing 1.49 [0.059] 1.12 [0.044] 2 .84 [0.033] 1 1.49 [0.059] .09 [0.004] .00 [0.000] .00 [0.000] Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: 0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 RF Input RF Output 0.10 x 0.20 0.10 x 0.20 [0.004 x 0.008] [0.004 x 0.008] GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGC1430F Recommended Assembly Drawing RFin RFout Attach 2 TFNs and MMIC to carrier plate as shown using conductive epoxy. Bond 4 wires as shown using minimum length. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Product Data Sheet August 5, 2008 TGC1430F Assembly Process Notes Reflow process assembly notes: * * * * * 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TriQuint: TGC1430F