PD - 97201B IRFI4229PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low E PULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l150C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS max VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max 250 300 38 32 150 V V m: A C D D S G G S D TO-220AB Full-Pak G D S Gate Drain Source Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Parameter VGS ID @ TC = 25C ID @ TC = 100C IDM IRP @ TC = 100C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current Power Dissipation Units 30 19 V A 12 72 g 32 46 W 18 0.37 W/C -40 to + 150 C 300 10lb in (1.1N m) N Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. x x Thermal Resistance Parameter RJC RJA Notes through f Junction-to-Case Junction-to-Ambient f Typ. --- --- Max. 2.73 65 Units C/W are on page 8 www.irf.com 1 http://store.iiic.cc/ 03/27/08 IRFI4229PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 --- --- VDSS/TJ Breakdown Voltage Temp. Coefficient --- 340 --- RDS(on) Static Drain-to-Source On-Resistance --- 38 46 VGS(th) Gate Threshold Voltage 3.0 --- 5.0 V VGS(th)/TJ Gate Threshold Voltage Coefficient --- -12 --- mV/C IDSS Drain-to-Source Leakage Current --- --- 20 A --- --- 200 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 IGSS V Conditions VGS = 0V, ID = 250A mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 11A e VDS = VGS, ID = 250A VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V gfs Forward Transconductance 26 --- --- S VDS = 25V, ID = 11A Qg Total Gate Charge --- 73 110 nC VDD = 125V, ID = 11A, VGS = 10V Qgd Gate-to-Drain Charge --- 24 --- td(on) Turn-On Delay Time --- 18 --- tr Rise Time --- 17 --- td(off) Turn-Off Delay Time --- 32 --- RG = 2.4 tf Fall Time --- 13 --- See Fig. 22 tst Shoot Through Blocking Time 100 --- --- EPULSE Energy per Pulse --- 770 --- --- 1380 --- e e VDD = 125V, VGS = 10V ns ns ID = 11A VDD = 200V, VGS = 15V, RG= 5.1 L = 220nH, C= 0.3F, VGS = 15V J VDS = 200V, RG= 5.1, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 5.1, TJ = 100C VGS = 0V Ciss Input Capacitance --- 4480 --- Coss Output Capacitance --- 400 --- Crss Reverse Transfer Capacitance --- 100 --- = 1.0MHz, Coss eff. Effective Output Capacitance --- 270 --- VGS = 0V, VDS = 0V to 200V LD Internal Drain Inductance --- 4.5 --- pF Between lead, nH LS Internal Source Inductance --- 7.5 VDS = 25V --- D 6mm (0.25in.) G from package S and center of die contact Avalanche Characteristics Parameter EAS EAR VDS(Avalanche) IAS d Repetitive Avalanche Energy c Repetitive Avalanche Voltagec Avalanche Currentd Single Pulse Avalanche Energy Typ. Max. Units --- 110 mJ --- 4.6 mJ 300 --- V --- 11 A Diode Characteristics Parameter IS @ TC = 25C Continuous Source Current Min. Typ. Max. Units --- --- 18 --- --- 72 (Body Diode) ISM Pulsed Source Current c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. (Body Diode) e VSD Diode Forward Voltage --- --- 1.3 V TJ = 25C, IS = 11A, VGS = 0V trr Reverse Recovery Time --- 120 180 ns TJ = 25C, IF = 11A, VDD = 50V Qrr Reverse Recovery Charge --- 540 810 nC di/dt = 100A/s 2 e www.irf.com http://store.iiic.cc/ IRFI4229PbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 1 0.1 5.0V BOTTOM VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 10 5.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 0.01 0.1 1 10 0.1 100 V DS, Drain-to-Source Voltage (V) 100 100 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics VDS = 25V 60s PULSE WIDTH 10 T J = 150C 1 T J = 25C 0.1 2.5 ID = 11A VGS = 10V 2.0 1.5 1.0 0.5 0.0 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 1400 1400 L = 220nH C = 0.3F 100C 25C 1200 Energy per Pulse (J) 1200 Energy per Pulse (J) 1 V DS, Drain-to-Source Voltage (V) 1000 800 600 400 1000 L = 220nH C = variable 100C 25C 800 600 400 200 200 0 140 150 160 170 180 190 200 210 VDS, Drain-to-Source Voltage (V) 100 110 120 130 140 150 160 170 ID, Peak Drain Current (A) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage www.irf.com Fig 6. Typical EPULSE vs. Drain Current 3 http://store.iiic.cc/ IRFI4229PbF 100 1800 1600 Energy per Pulse (J) 1400 ISD, Reverse Drain Current (A) L = 220nH C = 0.3F 1200 1000 C = 0.2F 800 600 C = 0.1F 400 TJ = 150C 10 T J = 25C 1 200 VGS = 0V 0.1 0 20 40 60 80 100 120 140 0.2 160 Fig 7. Typical EPULSE vs.Temperature VGS, Gate-to-Source Voltage (V) ID= 11A C, Capacitance (pF) Ciss 4000 3000 Coss 2000 1000 VDS= 200V VDS= 125V 10.0 VDS= 50V 8.0 6.0 4.0 2.0 Crss 0 0.0 1 10 100 1000 0 VDS, Drain-to-Source Voltage (V) 10 20 30 40 50 60 70 80 QG, Total Gate Charge (nC) Fig 9. Typical Capacitance vs.Drain-to-Source Voltage Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 20 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID, Drain-to-Source Current (A) 18 16 ID, Drain Current (A) 1.0 12.0 C oss = C ds + C gd 5000 0.8 Fig 8. Typical Source-Drain Diode Forward Voltage VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 6000 0.6 VSD, Source-to-Drain Voltage (V) Temperature (C) 7000 0.4 14 12 10 8 6 4 100 100sec 10 1msec 1 10msec 0.1 Tc = 25C Tj = 150C Single Pulse 2 0 0.01 25 50 75 100 125 150 T C , Case Temperature (C) 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Drain Current vs. Case Temperature 4 Fig 12. Maximum Safe Operating Area www.irf.com http://store.iiic.cc/ 200 450 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFI4229PbF ID = 11A 180 160 140 120 T J = 125C 100 80 60 T J = 25C 40 20 ID 2.3A 2.7A BOTTOM 11A 400 TOP 350 300 250 200 150 100 50 0 0 5 6 7 8 9 10 25 50 100 125 150 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) Fig 14. Maximum Avalanche Energy vs. Temperature Fig 13. On-Resistance vs. Gate Voltage 60 5.0 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse 50 Repetitive Peak Current (A) VGS(th) , Gate Threshold Voltage (V) 75 4.0 ID = 250A 3.0 40 30 20 10 0 2.0 -75 -50 -25 0 25 50 25 75 100 125 150 50 75 100 125 150 Case Temperature (C) T J , Temperature ( C ) Fig 15. Threshold Voltage vs. Temperature Fig 16. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 J 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 J 1 1 R2 R2 2 2 R3 R3 3 C 3 Ci= i/Ri Ci i/Ri Ri (C/W) i (sec) 0.3671 0.000287 1.0580 0.162897 1.3076 2.426 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRFI4229PbF D.U.T Driver Gate Drive - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + VDD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V tp A 0.01 I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L VCC DUT 0 Vgs(th) 1K Qgs1 Qgs2 Fig 20a. Gate Charge Test Circuit Qgd Qgodr Fig 20b. Gate Charge Waveform 6 www.irf.com http://store.iiic.cc/ IRFI4229PbF A RG C DRIVER L VCC B Ipulse RG DUT Fig 21b. tst Test Waveforms Fig 21a. tst and EPULSE Test Circuit Fig 21c. EPULSE Test Waveforms V DS V GS RG RD VDS 90% D.U.T. + -V DD 10% VGS VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 22a. Switching Time Test Circuit tr t d(off) tf Fig 22b. Switching Time Waveforms www.irf.com 7 http://store.iiic.cc/ IRFI4229PbF TO-220AB Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Full-Pak Part Marking Information (;$03/( 7+,6,6$1,5),* :,7+$66(0%/< /27&2'( $66(0%/('21: : ,17+($66(0%/</,1(. 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 3$57180%(5 ,5),* . $66(0 %/< /27&2'( '$7(&2'( <($5 : ((. /,1(. TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.9mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/08 8 www.irf.com http://store.iiic.cc/