APTGT75SK170D1G
APTGT75SK170T1G – Rev 2 December, 2009
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4
2
1
5
Q1 3
4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 130
IC Continuous Collector Current TC = 80°C 75
ICM Pulsed Collector Current TC = 25°C 150
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 465 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 150A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M5 power connectors
Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Buck chopper
Trench + Field Stop IGBT
Power Module
VCES = 1700V
IC = 75A @ Tc = 80°C
APTGT75SK170D1G
APTGT75SK170T1G – Rev 2 December, 2009
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4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 250 µA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 75A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 600 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 6800
Coes Output Capacitance 277
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 220
pF
QG Gate charge VGE=±15V, IC=75A
VCE=900V 0.85 µC
Td(on) Turn-on Delay Time 280
Tr Rise Time 80
Td(off) Turn-off Delay Time 850
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 75A
RG = 18Ω 120
ns
Td(on) Turn-on Delay Time 300
Tr Rise Time 100
Td(off) Turn-off Delay Time 1000
Tf Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 75A
RG = 18Ω 200
ns
Eon Turn-on Switching Energy Tj = 125°C 27
Eoff Turn-off Switching Energy
VGE = 15V
VBus = 900V
IC = 75A
RG = 18Ω Tj = 125°C 24.5
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 1000V
tp ≤ 10µs ; Tj = 125°C 300 A
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 75 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 75A Tj = 125°C 1.9 V
Tj = 25°C 410
trr Reverse Recovery Time Tj = 125°C 520 ns
Tj = 25°C 19
Qrr Reverse Recovery Charge Tj = 125°C 31 µC
Tj = 25°C 9
Err Reverse Recovery Energy
IF = 75A
VR = 900V
di/dt =800A/µs
Tj = 125°C 17.5 mJ
APTGT75SK170D1G
APTGT75SK170T1G – Rev 2 December, 2009
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.27
RthJC Junction to Case Thermal Resistance Diode 0.5 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
For terminals M5 2 3.5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 180 g
D1 Package outline (dimensions in mm)
Typical Performance Curve
Forward Characte ristic of diode
TJ=25°C
TJ=125°C
0
37.5
75
112.5
150
0 0.5 1 1.5 2 2.5 3
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
5
10
15
20
0 20406080100120
IC (A)
Fmax, Operat ing Frequency (kHz)
VCE=900V
D=50%
RG=18 Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effecti ve Transient Thermal I mped ance, Junction to Case vs Puls e Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APTGT75SK170D1G
APTGT75SK170T1G – Rev 2 December, 2009
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Output Characteristics (V
GE
=15V)
T
J
=25°C
T
J
=125°C
0
25
50
75
100
125
150
0 0.5 1 1.5 2 2.5 3 3.5 4
V
CE
(V)
I
C
(A)
Output Characteristics
V
GE
=15V
V
GE
=13V
V
GE
=20V
V
GE
=9V
0
37.5
75
112.5
150
012345
V
CE
(V)
I
C
(A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
T
J
=125°C
0
37.5
75
112.5
150
567891011
V
GE
(V)
I
C
(A)
Energy losses vs Collector Current
Eon
Eoff
Err
0
20
40
60
80
0 37.5 75 112.5 150
I
C
(A)
E (mJ)
V
CE
= 900V
V
GE
= 15V
R
G
= 18Ω
T
J
= 125°C
Eon
Eoff
Err
0
25
50
75
100
0 20406080100120140
Gate Resistance (ohms)
E (mJ)
V
CE
= 900V
V
GE
=15V
I
C
= 75A
T
J
= 125°C
Switchin g Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
25
50
75
100
125
150
175
0 400 800 1200 1600 2000
V
CE
(V)
I
C
(A)
V
GE
=15V
T
J
=125°C
R
G
=18Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Second s)
Thermal Impedance (°C/W)
IGBT
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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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