T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 1 of 7
2N3498 thru 2N3501
Availa ble on
commercial
versions
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Qualified Levels:
JAN, JANT X, JANTXV
and JANS
DESCRIPTION
This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a
JANS level for high-r eliab il it y applic at ions. These devices are also available in TO-5 and low
profile U4 packaging. Microsemi also offers numerous other transistor products to meet
higher and lower power ratings with various switching speed requirements in both through-
hole and surface-mount packages.
TO-39 (TO-205AD)
Package
Also available in:
TO-5 package
(long-leaded)
2N3498L – 2N3501L
U4 package
(surface mount)
2N3498U4 – 2N3501U4
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3498 thr ough 2N 3501 series.
• JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/366.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliabi lity applications.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol
2N3498
2N3499
2N3500
2N3501 Unit
Collector-Emitter Voltage VCEO 100 150 V
Collector-Base Voltage VCBO 100 150 V
Emitter-Base Voltage VEBO 6.0 6.0 V
Collector Current
IC
500
300
Thermal Resi stan ce Jun cti on-to-Ambient RӨJA 175
C/W
Thermal Resi stan ce Jun cti on-to-Case
R
ӨJC
30
Total Power Dissipation
@ TA = +25 °C (1)
@ TC = +25 °C (2) PT 1.0
5.0 W
Operating & Storage Junction T emperature Range TJ, Tstg -65 to +200 °C
Notes: 1. See figure 1.
2. See fi gur e 2.
T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 2 of 7
2N3498 thru 2N3501
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Leads are kovar, nickel plated, and finish is solder dip (Sn63/Pb37). Can be RoHS compliant with pure matte-tin
(commercial grade only).
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3498 (e3)
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
RoHS Compli ance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
SYMBOLS & DEFINITIONS
Symbol
Definition
Cobo
Common-base open-circuit output capacitance
ICEO
Collector cutoff current, base open
ICEX
Collector cut of f curr ent, circuit bet ween bas e and emitter
IEBO
Emitter cutoff current, collector open
hFE
Common-emitter static forward current transfer ratio
VCEO
Collector-emitter voltage, base open
VCBO
Collector-emitter voltage, emitter open
VEBO
Emitter-base voltage, collector open
T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 3 of 7
2N3498 thru 2N3501
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mA, pulsed
2N3498, 2N3499
2N3500, 2N3501
V(BR)CEO
100
150
V
Collector-Base Cutoff Current
VCB = 50 V
VCB = 75 V
VCB = 100 V
VCB = 150 V
2N3498, 2N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
ICBO
50
50
10
10
nA
nA
µA
µA
Emitter-Base Cutoff Current
VEB = 4.0 V
VEB = 6.0 V
IEBO
25
10
nA
µA
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 0.1 mA, VCE = 10 V
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V
IC = 300 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3498, 2N3500
2N3499, 2N3501
2N3500
2N3501
2N3498
2N3499
h
FE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
All Types
2N3498, 2N3499
2N3500, 2N3501
VCE(sat)
0.2
0.6
0.4
V
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 300 mA, IB = 30 mA
IC = 150 mA, IB = 15 mA
All Types
2N3498, 2N3499
2N3500, 2N3501
VBE(sat)
0.8
1.4
1.2
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
|hfe| 1.5 8.0
Output Capacitance
VCB = 10 V, IE = 0,
100 kHz < f < 1.0 MHz
2N3498, 2N3499
2N3500, 2N3501
Cobo
10
8.0
pF
Input Capacitance
VEB = 0.5 V, IC = 0, 100 kHz < f < 1.0 MHz
Cibo
80
pF
(1) Pulse Test: pulse width = 300 µs, duty cycle < 2.0%.
T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 4 of 7
2N3498 thru 2N3501
ELECTRICA L CHARACTERISTICS @ TA = +25 °C, unless otherwise noted
SWITCHING CHARACTERISTICS
Characteristic
Symbol
Min.
Max.
Unit
Turn-On Time
VEB = 5 V; IC = 150 mA; IB1 = 15 mA
t
on
115
ns
Turn-Off Time
IC = 150 mA; IB1 = IB2 = -15 mA
t
off
1150
ns
SAFE OPERATING AREA (See SOA figure and reference MIL-STD-750 method 3053)
DC Tests
TC = +25 oC, tr > 10 ns; 1 Cycle, t = 1.0 s
Test 1
VCE = 10 V, IC = 500 mA 2N3498, 2N3499
VCE = 16.67 V, IC = 300 mA 2N3500, 2N3501
Test 2
VCE = 50 V, IC = 100 mA All Types
Test 3
VCE = 80 V, IC = 40 mA All Types
Clamped Switching
TA = +25 oC
Test 1
IB = 85 mA, IC = 500 mA 2N3498, 2N3499
I
B
= 50 mA, I
C
= 300 mA 2N3500, 2N3501
VCE Collector to Emitter Voltage (Volts)
Maximum Safe Operating Area
I
C
Collector Current (Milliamperes)
T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 5 of 7
2N3498 thru 2N3501
GRAPHS
TA (°C) (Ambient)
FIGURE 1
Derating for all devices (RθJA)
Tc (°C) (Case)
FIGURE 2
Derating for all devices (RθJC)
DC Operation Maximum Rating (W)
DC Operation Maximum Rating (W)
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2N3498 thru 2N3501
GRAPHS
Time (s)
FIGURE 3
Thermal Impedance Gr a ph ( RθJA)
Time (s)
FIGURE 4
Thermal Impedance Gr a ph ( RθJC)
Theta (°C/W)
Theta (°C/W)
T4-LDS-0276, Rev. 1 (121221) ©2012 Microsemi Corporation Page 7 of 7
2N3498 thru 2N3501
PACKAGE DIMENSIONS
NOTES:
1. Dimension are in inches.
2. Millimeters are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone i s controlled for automatic handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) bel ow seating plane shall be
within .007 inch (0.18 mm) radius of true pos i tion (TP) relative to tab. Device may be measured by direct methods or
by gauge.
7. Symbol LD applies between L1 and L2. Dimensi on LD applies between L2 and LL minimu m. Lead dia meter sh all not
exceed .042 inch (1.07 m m ) within L1 and beyond LL minimum.
8. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector.
9. Lead number thr ee is electr i cally connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.7 mm) minimum and .750 inch (19.1
mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L, LL = 1.50 inches (38.1 mm)
minimum and 1.750 inches (44.5 mm) maximum.
13. All three leads.
14. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
Dimensions
Symbol
Inch
Millimeters
Note
Min
Max
Min
Max
CD
0.305
0.335
7.75
8.51
CH
0.240
0.260
6.10
6.60
HD
0.335
0.370
8.51
9.40
LC
0.200 TP
5.08 TP
6
LD
0.016
0.021
0.41
0.53
7
LL
See notes 7, 12 and 13
LU
0.016
0.019
0.41
0.48
7, 13
L1
0.050
1.27
13
L2
0.250
6.35
13
P
0.100
2.54
5
Q
0.050
1.27
4
TL
0.029
0.045
0.74
1.14
3
TW
0.028
0.034
0.71
0.86
10, 11
r
0.010
0.25
11
α
45° TP
45° TP
6