©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Motion-SPM
April 2010
TM
FPAB30BH60B
Smart Power Module(SPM®) for Front-End Rectifier
General Description
FPAB30BH60B is an advanced smart power
module(SPM®) of PFC(Power Factor Correction) that
Fairchild has newly developed and designed mainly
targeting mid-power application especially for an air
conditioners. It combines optimized circuit protection and
drive IC matched to high frequency switching IGBT.
System reliability is futher enhanced by the integrated
under-voltage lock-out and over-current protection function.
Features
• Low thermal resistance due to Al2O3-DBC substrate
• 600V-30A Single phase IGBT PWM converter including
a drive IC for gate driving and protection
• Typical switching frequency of 20kHz
• Isolation rating of 2500Vrms/min.
Applications
• Home appliances application like air conditioner
Fig. 1.
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Integrated Power Functions
• PFC converter for single-phase AC/DC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For IGBT: Gate drive circuit, Overcurrent circuit protection (OC), Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault and OC fault
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Fig. 2.
Note : For the measurement point of case temperature(TC), please refer to Fig. 2.
12.205
18.345
(1)VCC
(2)COM
(3)COM
(4)COM
(5)IN
(6)VFO
(7)CFOD
(8)CSC
(9)RTH
(10)VTH
(11)N.C
(12)N.C
(13)N
(14)N
(15)N
(16)N
(17)NR
(18)NR
(19)NR
(20)NR
(21)P
(22)P
(23)N.C
(24)L
(25)PR
(26)R
(27)S
DBC Substrate
Case Temperature (TC)
Detecting Point
Top View
12.205
18.345
(1)VCC
(2)COM
(3)COM
(4)COM
(5)IN
(6)VFO
(7)CFOD
(8)CSC
(9)RTH
(10)VTH
(11)N.C
(12)N.C
(13)N
(14)N
(15)N
(16)N
(17)NR
(18)NR
(19)NR
(20)NR
(21)P
(22)P
(23)N.C
(24)L
(25)PR
(26)R
(27)S
DBC Substrate
Case Temperature (TC)
Detecting Point
Top View
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Pin Descriptions
* 11th and 12th pins are cut. Please refer to package outline drawings for more detail.
Internal Equivalent Circuit and Input/Output Pins
Fig. 3.
Package Marking & Ordering Information
Pin Number Pin Name Pin Description
1 VCC Common Bias Voltage for IC and IGBT Driving
2,3,4 COM Common Supply Ground
5 IN Signal Input for IGBT
6 VFO Fault Output
7 CFOD Capacitor for Fault Output Duration Time Selection
8 CSC Capacitor (Low-pass Filter) for Over Current Detection
9 R(TH) NTC Thermistor terminal
10 V(TH) NTC Thermistor terminal
11,12 N.C No Connection*
13~16 N IGBT emitter
17~20 NRNegative DC-Link of Rectifier
21,22 P Positive Rail of DC–Link
23 N.C No Connection
24 L Reactor connection pin
25 PRPositive DC–Link of Rectifier
26 R AC input for R-phase
27 S AC input for S-phase
Device Marking Device Package Reel Size Tape Width Quantity
FPAB30BH60B FPAB30BH60B SPM27-IC - - 10
CSC
CFOD
VFO
IN
COM
VCC
OUT
(21,22) P
(24) L
(25) PR
NTC
Thermistor
(26) R
(27) S
(5) IN
(2~4) COM
(1) VCC
(6) VFO
(7) CFOD
(8) CSC
(10) VTH
(9) RTH
(13~16) N
(17~20) NR
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Control Part
Total System
Thermal Resistance
Item Symbol Condition Rating Unit
Supply Voltage ViApplied between R-S 264 VRMS
Supply Voltage (Surge) Vi(Surge) Applied between R-S 500 V
Output Voltage VPN Applied between P- N 450 V
Output Voltage (Surge) VPN(Surge) Applied between P- N 500 V
Collector-emitter Voltage VCES 600 V
Each IGBT Collector Current ICTC = 25°C, TJ < 150°C 30 A
Each IGBT Collector Current (peak) ICP TC = 25°C, TJ < 150°C
Under 1ms pulse width
60 A
Collector Dissipation PCTC = 25°C per One IGBT 104 W
Repititive Peak Reverse Voltage VRRM 600 V
Peak Forward Surge Current IFSM Single half sine-wave 350 A
Operating Junction Temperature TJ-40 ~ 150 °C
Item Symbol Condition Rating Unit
Control Supply Voltage VCC Applied between VCC - COM 20 V
Input Signal Voltage VIN Applied between IN - COM -0.3~VCC+0.3 V
Fault Output Supply Voltage VFO Applied between VFO - COM -0.3~VCC+0.3 V
Fault Output Current IFO Sink Current at VFO Pin 5 mA
Current Sensing Input Voltage VSC Applied between CSC - COM -0.3~VCC+0.3 V
Item Symbol Condition Rating Unit
Storage Temperature TSTG -40 ~ 125 °C
Isolation Voltage VISO 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
2500 Vrms
Item Symbol Condition Min. Typ. Max. Unit
Junction to Case Thermal
Resistance
Rq(j-c)Q IGBT - - 1.2 °C/W
Rq(j-c)F FRD - - 1.4 °C/W
Rq(j-c)R Rectifier - - 1.7 °C/W
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Converter Part
Note
1. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4
Electrical Characteristics
Fig. 4. Switching Time Definition
Control Part
Note
2. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
3. TTH is the temperature of know case temperature(Tc), please make the experiment considering your application.
Item Symbol Condition Min. Typ. Max. Unit
IGBT saturation voltage VCE(sat) VCC =15V, VIN = 5V; IC =30A - 2.2 2.8 V
FRD forward voltage VFF IF = 30A - 1.9 2.6 V
Rectifier forward voltage VFR IF = 30A - 1.2 1.5 V
Switching Times tON VPN = 400V, VCC = 15V, IC =30A
VIN = 0V « 5V, Inductive Load
(Note 1)
- 500 - ns
tC(ON) - 200 - ns
tOFF - 420 - ns
tC(OFF) - 100 - ns
trr - 60 - ns
Irr - 7 - A
Collector - emitter
Leakage Current
ICES VCE = VCES - - 250 mA
Item Symbol Condition Min. Typ. Max. Unit
Quiescent VCC Supply Cur-
rent
IQCCL VCC = 15V, IN = 0V VCC - COM - - 26 mA
Fault Output Voltage VFOH VSC = 0V, VFO Circuit: 4.7kW to 5V Pull-up 4.5 - - V
VFOL VSC = 1V, VFO Circuit: 4.7kW to 5V Pull-up - - 0.8 V
Over Current Trip Level VSC(ref) VCC = 15V 0.45 0.5 0.55 V
Supply Circuit Under-
Voltage Protection
UVCCD Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.2 V
Fault-out Pulse Width tFOD CFOD = 33nF (Note 2) 1.4 1.8 2.0 ms
ON Threshold Voltage VIN(ON) Applied between IN - COM 2.8 - - V
OFF Threshold Voltage VIN(OFF) - - 0.8 V
Resistance of Thermistor RTH @ TTH = 25°C (Note3, Fig. 9) - 47.0 - kW
@ TTH = 100°C (Note3, Fig. 9) - 2.9 - kW
tON
tC(ON)
trr
Irr
10% of IC
100% of IC
90% of IC
120% of IC
15% of VCE
(a) Turn-on
tOFF
tC(OFF)
(b) Turn-off
IC
VCE
VCE
IC
VIN VIN
15% of VCE
10% of IC
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Recommended Operating Condition
Mechanical Characteristics and Ratings
Fig. 5. Flatness Measurement Position
Item Symbol Condition Min. Typ. Max. Unit
Input Supply Voltage ViApplied between R-S 187 220 253 V
Output Voltage VPN Applied between P-N 380 400 V
Control Supply Voltage VCC Applied between VCC(L)- COM 13.5 15 16.5 V
Control supply variation dVCC/dt -1 - 1 V/ms
PWM Input Frequency fPWM TJ £ 150°C per IGBT 20 kHz
Allowable Input Current
(Peak)
IiTC < 90°C, Vi=220V, VPN=380V
VPWM=20KHz
30 A
Item Condition Limits Units
Min. Typ. Max.
Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.72 N•m
Device Flatness Note Fig. 5 0 - +120 mm
Weight - 15.00 - g
(+)
(+)
(+)
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Time Charts of SPMs Protective Function
P1 : Normal operation - IGBT ON and conducting current
P2 : Under voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under voltage reset
P6 : Normal operation - IGBT ON and conducting current
Fig. 6. Under-Voltage Protection
P1 : Normal operation - IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / Fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signal - but IGBT cannot be turned on during the fault Output activation
P7 : IGBT OFF state
P8 : Fault Output reset and normal operation start
Fig. 7. Over Current Protection
In te rn a l IG B T
G a te -E m itte r V o lt a g e
In p u t S ig n a l
O u tp u t C u rr e n t
F a u lt O u tp u t S ig n a l
C o n tr o l S u p p ly V o lta g e
P 1
P 2
P 3
P 4
P 6
P 5
U V
d e t e c t
U V
re s e t
In te rn a l IG B T
G a te -E m it te r V o lta g e
In p u t S ig n a l
O u tp u t C u r re n t
S e n s in g V o lta g e
F a u lt O u tp u t S ig n a l
P 1
P 2
P 3
P 4
P 6
P 5
P 7
P 8
O C R e fe re n c e
V o lt a g e ( 0 .5 V )
R C F ilt e r D e la y
O C D e te c tio n
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Fig. 8. Application Example
Fig. 9. R-T Curve of the Built-in Thermistor
0 25 50 75 100 125
0
50
100
150
200
MIN
TYP
MAX
R-T Curve
Resistance RTH[kW]
Temperature TTH[ ]℃
95 100 105 110 115 120 125
1
2
3
4
MIN
TYP
MAX
Resistance RTH[kW]
Temperature TTH[ ]℃
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Detailed Package Outline Drawings
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Detailed Package Outline Drawings
©2010 Fairchild Semiconductor Corporation
FPAB30BH60B Smart Power Module (SPM®)
Detailed Package Outline Drawings
©2010 Fairchild Semiconductor Corporation Rev. 00
