MB39C014PN - Fujitsu Limited

FUJITSU MICROELECTRONICS

DATA SHEET

2008.7

ASSP for Power Management Applications

1 ch DC/DC Converter IC Built-in

Switching FET, Synchronous Rectification,

and Down Conversion Support

MB39C014

■DESCRIPTION

The MB39C014 is a current mode type 1-channel DC/DC converter IC built-in switching FET, synchronous

rectification, and down conversion support. The device is integrated with a switching FET, oscillator, error amplifier,

PWM control circuit, reference voltage source, and POWERGOOD circuit.

External inductor and decoupling capacitor are needed only for the external component.

As combining with external parts enables a DC/DC converter with a compact and high load response characteristic,

this is suitable as the built-in power supply for such as mobile phone/PDA, DVDs, and HDDs.

■FEATURES

• High efficiency : 96% (Max)

• Output current (DC/DC) : 800 mA (Max)

• Input voltage range : 2.5 V to 5.5 V

• Operating frequency : 2.0/3.2 MHz (Typ)

• No flyback diode needed

• Low dropout operation : For 100% on duty

• Built-in high-precision reference voltage generator : 1.20 V ± 2%

• Consumption current in shutdown mode : 1 µA or less

• Built-in switching FET : P-ch MOS 0.3 Ω (Typ) N-ch MOS 0.2 Ω (Typ)

• High speed for input and load transient response in the current mode

• Over temperature protection

• Packaged in a compact package : SON10

■APPLICATIONS

•Flash ROMs

• MP3 players

• Electronic dictionary devices

• Surveillance cameras

• Portable GPS navigators

• Mobile phones

DS04-27253-1E

MB39C014

2DS04-27253-1E

■PIN ASSIGNMENT

■PIN DESCRIPTIONS

Pin No Pin name I/O Description

1 LX O Inductor connection output pin. High impedance during shut down.

2GND⎯Ground pin.

3 CTL I Control input pin. (L : Shut down / H : Normal operation)

4 VREF O Reference voltage output pin.

5 POWERGOOD O POWERGOOD circuit output pin. Internally connected to an N-ch MOS open

drain circuit.

6 FSEL I Frequency switch pin.

(L (open) : 2.0 MHz, H : 3.2 MHz)

7 VREFIN I Error amplifier (Error Amp) non-inverted input pin.

8 MODE I Use pin at L level or leave open.

9 OUT I Output voltage feedback pin.

10 VDD ⎯Power supply pin.

(Top View)

(LCC-10P-M04)

POWERGOODVREFCTLGNDLX

VDD OUT MODE VREFIN FSEL

12345

109876

MB39C014

DS04-27253-1E 3

■I/O PIN EQUIVALENT CIRCUIT DIAGRAM

∗

GND

VDD

GND

VDD

LX VREF

POWER

GOOD

∗

GND

FSEL

∗

GND

VDD

∗

MODE

∗

GND

VDD

∗

GND

VDD

CTL

GND

VDD

∗

VREFIN OUT

∗

* : ESD Protection device

MB39C014

4DS04-27253-1E

■BLOCK DIAGRAM

VDD

ERR

×3Amplifier

OUT

Comparator

1.20 V VREF PWM

Logic

Control

ON/OFF

CTL

OUT

POWERGOOD

POWER

GOOD

VREF

VREFIN

DAC

MODE

FSEL GND

GND

LX VOUT

VDD

VIN

−

6 2

MB39C014

DS04-27253-1E 5

• Current mode

• Original voltage mode type:

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp

- Reference triangular wave (VTRI)

• Current mode type:

Instead of the triangular wave (VTRI), the voltage (VIDET) obtained through I-V conversion of the sum of currents

that flow in the oscillator (rectangular wave generation circuit) and SW FET is used.

Stabilize the output voltage by comparing two items below and on-duty control.

- Voltage (VC) obtained through negative feedback of the output voltage by Error Amp

- Voltage (VIDET) obtained through I-V conversion of the sum of current that flow in the oscillator (rectangular

wave generation circuit) and SW FET

VIN

ton

toff

VTRI

VIN

toff

VIDET

ton

SR-FF

VIDET

Voltage mode type model Current mode type model

Oscillator

Note : The above models illustrate the general operation and an actual operation will be preferred in the IC.

MB39C014

6DS04-27253-1E

■FUNCTION OF EACH BLOCK

• PWM Logic control circuit

The built-in P-ch and N-ch MOS FETs are controlled for synchronization rectification according to the frequency

(2.0 MHz/3.2 MHz) oscillated from the built-in oscillator (square wave oscillation circuit).

• IOUT comparator circuit

This circuit detects the current (ILX) which flows to the external inductor from the built-in P-ch MOS FET.

By comparing VIDET obtained through I-V conversion of peak current IPK of ILX with the Error Amp output, the built-

in P-ch MOS FET is turned off via the PWM Logic Control circuit.

• Error Amp phase compensation circuit

This circuit compares the output voltage to reference voltages such as VREF. This IC has a built-in phase

compensation circuit that is designed to optimize the operation of this IC. This needs neither to be considered

nor addition of a phase compensation circuit and an external phase compensation device.

• VREF circuit

A high accuracy reference voltage is generated with BGR (bandgap reference) circuit. The output voltage is

1.20 V (Typ).

• POWERGOOD circuit

The POWERGOOD circuit monitors the voltage at the OUT pin. Normally, use the POWERGOOD pin through

pull-up with an external resistor. When the OUT pin voltage reaches the output set voltage, it reaches the H level.

Timing chart example : (POWERGOOD pin pulled up to VIN)

• Protection circuit

This IC has a built-in over-temperature protection circuit.

The over-temperature protection circuit turns off both N-ch and P-ch switching FETs when the junction

temperature reaches +135 °C. When the junction temperature comes down to + 110 °C, the switching FET is

returned to the normal operation.

Since the PWM control circuit of this IC is in the control method in current mode, the current peak value is also

monitored and controlled as required.

VIN

CTL

DLYPG

or less

DLYPG

VOUT

POWERGOOD

UVLO

OUT

97%

VUVLO : UVLO threshold voltage

tDLYPG : POWERGOOD delay time

MB39C014

DS04-27253-1E 7

• FUNCTION TABLE

* : Don't care

MODE

Input Output

Switching

frequency CTL FSEL OUTPUT pin

voltage VREF POWERGOOD

Shutdown mode ⎯L * Output stop Output

stop Function stop

Operation mode 2.0 MHz H L VOUT voltage output 1.2 V Operation

3.2 MHz H H

MB39C014

8DS04-27253-1E

■ABSOLUTE MAXIMUM RATINGS

*1 : Power dissipation value between + 25 °C and + 85 °C is obtained by connecting these two points with a straight

line

*2 : When mounted on a four- layer epoxy board of 11.7 cm × 8.4 cm

*3 : Connection at exposure pad with thermal via. (Thermal via 4 holes)

*4 : Connection at exposure pad, without a thermal via.

Notes •The use of negative voltages below − 0.3 V to the GND pin may create parasitic transistors on LSI lines,

which can cause abnormal operation.

•This device can be damaged if the LX pin is short-circuited to VDD or GND.

•Take measures not to keep the FSEL pin falling below the GND potential of this IC as much as possible.

In addition to erroneous operation, the IC may latch up and destroy itself if 110 mA or more current flows

from this pin.

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

Parameter Symbol Condition Rating Unit

Min Max

Power supply voltage VDD VDD pin − 0.3 + 6.0 V

Signal input voltage VISIG

OUT pin − 0.3 VDD + 0.3

VCTL, MODE, FSEL pins − 0.3 VDD + 0.3

VREFIN pin − 0.3 VDD + 0.3

POWERGOOD pull-up voltage VIPG POWERGOOD pin − 0.3 + 6.0 V

LX voltage VLX LX pin − 0.3 VDD + 0.3 V

LX peak current IPK ILX ⎯1.8 A

Power dissipation PD

Ta ≤ + 25 °C⎯2632*1, *2, *3

⎯980*1, *2, *4

Ta = + 85 °C⎯1053*1, *2, *3

⎯392*1, *2, *4

Operating ambient temperature Ta ⎯ − 40 + 85 °C

Storage temperature TSTG ⎯ − 55 + 125 °C

MB39C014

DS04-27253-1E 9

■RECOMMENDED OPERATING CONDITIONS

Note : The output current from this device has a situation to decrease if the power supply voltage (VIN) and the DC/DC

converter output voltage (VOUT) differ only by a small amount. This is a result of slope compensation and will

not damage this device.

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is

operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation

outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on

the data sheet. Users considering application outside the listed conditions are advised to contact their

representatives beforehand.

Parameter Symbol Condition Value Unit

Min Typ Max

Power supply voltage VDD ⎯2.5 3.7 5.5 V

VREFIN voltage VREFIN ⎯0.15 ⎯1.20 V

CTL voltage VCTL ⎯0⎯5.0 V

LX current ILX ⎯⎯⎯800 mA

POWERGOOD current IPG ⎯⎯⎯1mA

VREF output current IROUT

2.5 V ≤ VDD ≤ 3.0 V ⎯⎯0.5 mA

3.0 V ≤ VDD ≤ 5.5 V ⎯⎯ 1

Inductor value L 2.0 MHz (FSEL = L) ⎯2.2 ⎯µH

3.2 MHz (FSEL = H) ⎯1.5 ⎯

MB39C014

10 DS04-27253-1E

■ELECTRICAL CHARACTERISTICS

(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)

* : Standard design value

(Continued)

Parameter Symbol Pin

No. Condition Value Unit

Min Typ Max

DC/DC

converter

block

Input current

IREFINM

VREFIN = 0.833 V −100 0 + 100 nA

IREFINLVREFIN = 0.15 V −100 0 + 100 nA

IREFINHVREFIN = 1.20 V −100 0 + 100 nA

Output voltage VOUT

VREFIN = 0.833 V,

OUT = −100 mA 2.45 2.50 2.55 V

Input stability LINE 2.5 V ≤ VDD ≤ 5.5 V *1⎯10 ⎯mV

Load stability LOAD − 100 mA ≥ OUT ≥

− 800 mA ⎯10 ⎯mV

Out pin input

impedance ROUT OUT = 2.0 V 0.6 1.0 1.5 MΩ

LX peak current IPK

Output shorted to GND 0.9 1.2 1.7 A

Oscillation

frequency

fOSC1 FSEL = 0 V 1.6 2.0 2.4 MHz

fOSC2 FSEL = 3.7 V 2.56 3.20 3.84 MHz

Rise delay time tPG 3, 9 C1 = 4.7 µF, OUT = 0 A,

VOUT = 90% ⎯45 80 µs

SW NMOS FET

OFF voltage VNOFF

⎯−40* −20* 0* mV

SW PMOS FET

ON resistance RONP LX = −100 mA ⎯0.30 0.47 Ω

SW NMOS FET

ON resistance RONN LX = −100 mA ⎯0.20 0.36 Ω

LX leak current ILEAKM0 ≤ LX ≤ VDD*2−1.0 ⎯ + 8.0 µA

ILEAKHVDD = 5.5 V, 0 ≤ LX ≤ VDD*2−2.0 ⎯ + 16.0 µA

Protection

circuit block

Over temperature

protection

(Junction Temp.)

TOTPH

⎯⎯

+ 120* + 135* + 155* °C

TOTPL + 95* + 110* + 130* °C

UVLO threshold

voltage

VTHH

⎯2.07 2.20 2.33 V

VTHL 1.92 2.05 2.18 V

UVLO hysteresis

width VHYS ⎯0.08 0.15 0.25 V

MB39C014

DS04-27253-1E 11

(Continued)

(Ta = + 25 °C, VDD = 3.7 V, VOUT setting value = 2.5 V, MODE = 0 V)

*1 : The minimum value of VDD is the 2.5 V or VOUT setting value + 0.6 V, whichever is higher.

*2 : The + leak at the LX pin includes the current of the internal circuit.

*3 : Detected with respect to the output voltage setting value of VREFIN

*4 : Current consumption based on 100% ON-duty (High side FET in full ON state). The SW FET gate drive current

is not included because the device is in full ON state (no switching operation). Also the load current is not

included.

Parameter Symbol Pin

No. Condition Value Unit

Min Typ Max

POWER-

GOOD

block

POWERGOOD

threshold

voltage

VTHPG

VREFIN ×

× 0.93

VREFIN ×

× 0.97

VREFIN ×

× 0.99

POWERGOOD

delay time

tDLYPG1 FSEL = 0 V ⎯250 ⎯µs

tDLYPG2 FSEL = 3.7 V ⎯170 ⎯µs

POWERGOOD

output voltage VOL POWERGOOD = 250 µA⎯⎯0.1 V

POWERGOOD

output current IOH POWERGOOD = 5.5 V ⎯⎯1.0 µA

Control

block

CTL threshold

voltage

VTHHCT

⎯0.55 0.95 1.45 V

VTHLCT ⎯0.40 0.80 1.30

CTL pin

input current IICTL CTL = 3.7 V ⎯⎯1.0 µA

FSEL threshold

voltage

VTHHFS 6⎯2.96 ⎯⎯

VTHLFS ⎯⎯⎯0.74

Reference

voltage

block

VREF voltage VREF

VREF = −2.7 µA,

OUT = −100 mA 1.176 1.200 1.224 V

VREF load

stability LOADREF VREF = −1.0 mA ⎯⎯20 mV

General

Shut down

power supply

current

IVDD1

CTL = 0 V,

All circuits in OFF state ⎯⎯1.0 µA

IVDD1H CTL = 0 V, VDD = 5.5 V ⎯⎯1.0 µA

Standby power

supply current

(DC/DC)

IVDD2 CTL = 3.7 V, OUT = 0 A,

FSEL = 0 V ⎯4.0 8.0 mA

Power-on

invalid current IVDD CTL = 3.7 V,

VOUT = 90%*4⎯800 1500 µA

MB39C014

12 DS04-27253-1E

■TEST CIRCUIT FOR MEASURING TYPICAL OPERATING CHARACTERISTICS

Note : These components are recommended based on the operating tests authorized.

TDK : TDK Corporation

SSM : SUSUMU Co., Ltd

KOA : KOA Corporation

Component Specification Vendor Part Number Remark

R1 1 MΩKOA RK73G1JTTD D 1 MΩ

R3-1

R3-2

7.5 kΩ

120 kΩ

SSM

RR0816-752-D

RR0816-124-D At VOUT = 2.5 V setting

R4 300 kΩSSM RR0816-304-D

R5 1 MΩKOA RK73G1JTTD D 1 MΩ

C1 4.7 µF TDK C2012JB1A475K

C2 4.7 µF TDK C2012JB1A475K

C6 0.1 µF TDK C1608JB1H104K For adjusting slow start

time

L1 2.2 µH TDK VLF4012AT-2R2M 2.0 MHz operation

1.5 µH TDK VLF4012AT-1R5M 3.2 MHz operation

VIN

VOUT

C1 IOUT

CTL

MODE

VREF

VREFIN GND

OUT

VDD

GND

VDD VDD

MB39C014

POWER

GOOD

FSEL

R3-1

R3-2

103

Output voltage = VREFIN × 2.97

MB39C014

DS04-27253-1E 13

■APPLICATION NOTES

[1] Selection of components

• Selection of an external inductor

Basically it dose not need to design inductor. This IC is designed to operate efficiently with a 2.2 µH (2.0 MHz

operation) or 1.5 µH (3.2 MHz operation) inductor.

The inductor should be rated for a saturation current higher than the LX peak current value during normal

operating conditions, and should have a minimal DC resistance. (100 mΩ or less is recommended.)

LX peak current value IPK is obtained by the following formula.

L : External inductor value

IOUT : Load current

VIN : Power supply voltage

VOUT : Output setting voltage

D : ON- duty to be switched( = VOUT/VIN)

fosc : Switching frequency (2.0 MHz or 3.2 MHz)

ex) At VIN = 3.7 V, VOUT = 2.5 V, IOUT = 0.8 A, L = 2.2 µH, fosc = 2.0 MHz

The maximum peak current value IPK;

• I/O capacitor selection

• Select a low equivalent series resistance (ESR) for the VDD input capacitor to suppress dissipation from ripple

currents.

• Also select a low equivalent series resistance (ESR) for the output capacitor. The variation in the inductor

current causes ripple currents on the output capacitor which, in turn, causes ripple voltages an output equal

to the amount of variation multiplied by the ESR value. The output capacitor value has a significant impact on

the operating stability of the device when used as a DC/DC converter. Therefore, FUJITSU MICROELEC-

TRONICS generally recommends a 4.7 µF capacitor, or a larger capacitor value can be used if ripple voltages

are not suitable. If the VIN/VOUT voltage difference is within 0.6 V, the use of a 10 µF output capacitor value is

recommended.

• Types of capacitors

Ceramic capacitors are effective for reducing the ESR and afford smaller DC/DC converter circuit. However,

power supply functions as a heat generator, therefore avoid to use capacitor with the F-temperature rating

( − 80% to + 20%) . FUJITSU MICROELECTRONICS recommends capacitors with the B-temperature rating

( ± 10% to ± 20%).

Normal electrolytic capacitors are not recommended due to their high ESR.

Tantalum capacitor will reduce ESR, however, it is dangerous to use because it turns into short mode when

damaged. If you insist on using a tantalum capacitor, FUJITSU MICROELECTRONICS recommends the type

with an internal fuse.

IPK = IOUT +VIN − VOUT × D × 1 = IOUT + (VIN − VOUT) × VOUT

L fosc 2 2 × L × fosc × VIN

IPK = IOUT + (VIN − VOUT) × VOUT = 0.8 A + (3.7 V − 2.5 V) × 2.5 V := 0.89 A

2 × L × fosc × VIN 2 × 2.2 µH × 2 MHz × 3.7 V

MB39C014

14 DS04-27253-1E

[2] Output voltage setting

The output voltage VOUT of this IC is defined by the voltage input to VREFIN. Supply the voltage for inputting to

VREFIN from an external power supply, or set the VREF output by dividing it with resistors.

The output voltage when the VREFIN voltage is set by dividing the VREF voltage with resistors is shown in the

following formula.

Note : Refer to “■ APPLICATIN CIRCUIT EXAMPLES” for an example of this circuit.

Although the output voltage is defined according to the dividing ratio of resistance, select the resistance value

so that the current flowing through the resistance does not exceed the VREF current rating (1 mA) .

[3] About conversion efficiency

The conversion efficiency can be improved by reducing the loss of the DC/DC converter circuit.

The total loss (PLOSS) of the DC/DC converter is roughly divided as follows :

PLOSS = PCONT + PSW + PC

PCONT : Control system circuit loss (The power used for this IC to operate, including the the gate driving

power for internal SW FETs)

PSW : Switching loss (The loss caused during switching of the IC's internal SW FETs)

PC : Continuity loss (The loss caused when currents flow through the IC's internal SW FETs and external

circuits )

The IC's control circuit loss (PCONT) is extremely small, less than 100 mW with no load.

As the IC contains FETs which can switch faster with less power, the continuity loss (PC) is more predominant

as the loss during heavy-load operation than the control circuit loss (PCONT) and switching loss (PSW) .

VOUT = 2.97 × VREFIN, VREFIN = R4 × VREF

R3 + R4

(VREF = 1.20 V)

VREF

VREFIN

VREF

VREFIN

MB39C014

DS04-27253-1E 15

Furthermore, the continuity loss (PC) is divided roughly into the loss by internal SW FET ON-resistance and by

external inductor series resistance.

PC = IOUT2 × (RDC + D × RONP + (1 − D) × RONN)

D : Switching ON-duty cycle ( = VOUT / VIN)

RONP : Internal P-ch SW FET ON resistance

RONN : Internal N-ch SW FET ON resistance

RDC : External inductor series resistance

IOUT : Load current

The above formula indicates that it is important to reduce RDC as much as possible to improve efficiency by

selecting components.

[4] Power dissipation and heat considerations

The IC is so efficient that no consideration is required in most of the cases. However, if the IC is used at a low

power supply voltage, heavy load, high output voltage, or high temperature, it requires further consideration for

higher efficiency.

The internal loss (P) is roughly obtained from the following formula :

P = IOUT2 × (D × RONP + (1 − D) × RONN)

D : Switching ON-duty cycle ( = VOUT / VIN)

RONP : Internal P-ch SW FET ON resistance

RONN : Internal N-ch SW FET ON resistance

IOUT : Output current

The loss expressed by the above formula is mainly continuity loss. The internal loss includes the switching loss

and the control circuit loss as well but they are so small compared to the continuity loss they can be ignored.

In this IC with RONP greater than RONN, the larger the on-duty cycle, the greater the loss.

When assuming VIN = 3.7 V, Ta = + 70 °C for example, RONP = 0.42 Ω and RONN = 0.36 Ω according to the graph

“MOS FET ON resistance vs. Operating ambient temperature”. The IC's internal loss P is 144 mW at VOUT = 2.5

V and IOUT = 0.6 A. According to the graph “Power dissipation vs. Operating ambient temperature”, the power

dissipation at an operating ambient temperature Ta of + 70 °C is 539 mW and the internal loss is smaller than

the power dissipation.

MB39C014

16 DS04-27253-1E

[5] Transient response

Normally, IOUT is suddenly changed while VIN and VOUT are maintained constant, responsiveness including the

response time and overshoot/undershoot voltage is checked. As this IC has built-in Error Amp with an optimized

design, it shows good transient response characteristics. However, if ringing upon sudden change of the load

is high due to the operating conditions, add capacitor C6 (e.g. 0.1 µF). (Since this capacitor C6 changes the

start time, check the start waveform as well.) This action is not required for DAC input.

[6] Board layout, design example

The board layout needs to be designed to ensure the stable operation of this IC.

Follow the procedure below for designing the layout.

• Arrange the input capacitor (Cin) as close as possible to both the VDD and GND pins. Make a thru-hole (TH)

near the pins of this capacitor if the board has planes for power and GND.

• Large AC currents flow between this IC and the input capacitor (Cin), output capacitor (CO), and external

inductor (L). Group these components as close as possible to this IC to reduce the overall loop area occupied

by this group. Also try to mount these components on the same surface and arrange wiring without thru-hole

wiring. Use thick, short, and straight routes to wire the net (The layout by planes is recommended.).

• The feedback wiring to the OUT should be wired from the voltage output pin closest to the output capacitor

(CO). The OUT pin is extremely sensitive and should thus be kept wired away from the LX pin of this IC as far

as possible.

• If applying voltage to the VREFIN pin through dividing resistors, arrange the resistors so that the wiring can

be kept as short as possible. Also arrange them so that the GND pin of the VREFIN resistor is close to the

IC's GND pin. Further, provide a GND exclusively for the control line so that the resistor can be connected via

a path that does not carry current. If installing a bypass capacitor for the VREFIN, put it close to the VREFIN pin.

• Try to make a GND plane on the surface to which this IC will be mounted. For efficient heat dissipation when

using the SON-10 package, FUJITSU MICROELECTRONICS recommends providing a thermal via in the

footprint of the thermal pad.

Layout Example of IC SW components

VREF

VREFIN

VREF

VREFIN

MB39C014

Co Cin

Vo L

GND

1 Pin VIN

Feedback line

MB39C014

DS04-27253-1E 17

• Notes for Circuit Design

• The switching operation of this IC works by monitoring and controlling the peak current which, incidentally,

serves as form of short-circuit protection. However, do not leave the output short-circuited for long periods of

time. If the output is short-circuited where VIN < 2.9 V, the current limit value (peak current to the inductor)

tends to rise. Leaving in the short-circuit state, the temperature of this IC will continue rising and activate the

thermal protection.

Once the thermal protection stops the output, the temperature of the IC will go down and operation will resume,

after which the output will repeat the starting and stopping.

Although this effect will not destroy the IC, the thermal exposure to the IC over prolonged hours may affect the

peripherals surrounding it.

MB39C014

18 DS04-27253-1E

■EXAMPLE OF STANDARD OPERATION CHARACTERISTICS

(Shown below is an example of characteristics for connection according to“■ TEST CIRCUIT FOR MEASURING

TYPICAL OPERATING CHARACTERISTICS”.)

(Continued)

100

1 10 100 1000

VIN = 3.7 V

VIN = 4.2 V

VIN = 3.0 V

= +

°C

OUT

2.5 V

FSEL

VIN = 5.0 V

100

1 10 100 1000

= +

°C

OUT

1.2 V

FSEL

VIN = 3.7 V

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

1.8 V

FSEL

100

1 10 100 1000

VIN = 3.7 V

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

3.3 V

FSEL

100

1 10 100 1000

VIN = 3.7 V

VIN = 4.2 V

VIN = 5.0 V

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Conversion efficiency vs. Load current

(2.0 MHz)

Conversion efficiency vs. Load current

(2.0 MHz)

Conversion efficiency vs. Load current

(2.0 MHz)

Conversion efficiency vs. Load current

(2.0 MHz)

MB39C014

DS04-27253-1E 19

(Continued)

100

1 10 100 1000

VIN = 3.7 V

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

2.5 V

FSEL

100

1 10 100 1000

VIN = 3.7 V

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

1.2 V

FSEL

100

1 10 100 1000

VIN = 3.7 V

VIN = 3.0 V

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

1.8 V

FSEL

100

1 10 100 1000

VIN = 4.2 V

VIN = 5.0 V

= +

°C

OUT

3.3 V

FSEL

VIN = 3.7 V

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Load current IOUT (mA)

Conversion efficiency η (%)

Conversion efficiency vs. Load current

(3.2 MHz)

Conversion efficiency vs. Load current

(3.2 MHz)

Conversion efficiency vs. Load current

(3.2 MHz)

Conversion efficiency vs. Load current

(3.2 MHz)

MB39C014

20 DS04-27253-1E

(Continued)

2.40

2.0 3.0 4.0 5.0 6.0

2.42

2.44

2.46

2.48

2.50

2.52

2.54

2.56

2.58

2.60

IOUT

0 A

IOUT

100 mA

2.40

2.0 3.0 4.0 5.0 6.0

2.42

2.44

2.46

2.48

2.50

2.52

2.54

2.56

2.58

2.60

IOUT

0 A

IOUT

100 mA

0 200 400 600 800

2.40

2.42

2.44

2.46

2.48

2.50

2.52

2.54

2.56

2.58

2.60

0 200 400 600 800

2.40

2.42

2.44

2.46

2.48

2.50

2.52

2.54

2.56

2.58

2.60

Input voltage VIN (V)

Output voltage VOUT (V)

Input voltage VIN (V)

Output voltage VOUT (V)

Load current IOUT (mA)

Output voltage VOUT (V)

Load current IOUT (mA)

Output voltage VOUT (V)

Output voltage vs. Input voltage

(2.0 MHz)

Output voltage vs. Input voltage

(3.2 MHz)

Output voltage vs. Load current

(2.0 MHz)

Output voltage vs. Load current

(3.2 MHz)

Ta = +25 °C

VOUT = 2.5 V setting

FSEL = L

Ta = +25 °C

VOUT = 2.5 V setting

FSEL = H

Ta = +25 °C

VIN = 3.7 V

VOUT = 2.5 V setting

FSEL = L

Ta = +25 °C

VIN = 3.7 V

VOUT = 2.5 V setting

FSEL = H

MB39C014

DS04-27253-1E 21

(Continued)

1.1

23456

1.12

1.14

1.16

1.18

1.2

1.22

1.24

1.26

1.28

1.3

= +

°C

OUT

2.5 V

3.7 V

OUT

2.5 V

1.1

1.12

1.14

1.16

1.18

1.2

1.22

1.24

1.26

1.28

1.3

−50 0 +50 +100

2.0 3.0 4.0 5.0 6.0

= +

°C

OUT

2.5 V

−50 0 +50 +100

3.7 V

OUT

2.5 V

Reference voltage vs. Input voltage

Reference voltage VREF (V)

Input current vs. Operating ambient

temperature

Input current IIN (mA)

Input current vs. Input voltage

Input current IIN (mA)

Reference voltage vs. Operating

ambient temperature

Reference voltage VREF (V)

Input voltage VIN (V)

Operating ambient temperature Ta ( °C)

Input voltage VIN (V)

Operating ambient temperature Ta ( °C)

MB39C014

22 DS04-27253-1E

(Continued)

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.0 3.0 4.0 5.0 6.0

= +

°C

OUT

200 mA

OUT

2.5 V

FSEL

2.4

2.6

2.8

3.0

3.2

3.4

3.6

2.0 3.0 4.0 5.0 6.0

= +

°C

OUT

200 mA

OUT

2.5 V

FSEL

1.6

1.7

1.8

1.9

2.0

2.1

2.2

2.3

2.4

−

50 0 +50 +100

3.7 V

OUT

200 mA

OUT

2.5 V

FSEL

2.4

2.6

2.8

3.0

3.2

3.4

3.6

−

+50 +100

3.7 V

OUT

200 mA

OUT

2.5 V

FSEL

Input voltage VIN (V)

Oscillation frequency fOSC1 (MHz)

Input voltage VIN (V)

Oscillation frequency fOSC2 (MHz)

Operating ambient temperature Ta ( °C)

Oscillation frequency fOSC1 (MHz)

Operating ambient temperature Ta ( °C)

Oscillation frequency fOSC2 (MHz)

Oscillation frequency vs. Input voltage

(2.0 MHz)

Oscillation frequency vs. Input voltage

(3.2 MHz)

Oscillation frequency vs. Operating

ambient temperature (2.0 MHz)

Oscillation frequency vs. Operating

ambient temperature (3.2 MHz)

MB39C014

DS04-27253-1E 23

(Continued)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

2.0 3.0 4.0 5.0 6.0

P-ch

N-ch

= +

°C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

−

+50 +100

3.7 V

5.5 V

0.0

0.1

0.2

0.3

0.4

0.5

0.6

−

+50 +100

5.5 V

3.7 V

0.0

0.4

0.2

0.6

0.8

1.0

1.2

1.4

2.0 3.0 4.0 5.0 6.0

= +

°C

THHCT

THLCT

OUT

2.5 V

Input voltage VIN (V)

MOS FET ON resistance RON (Ω)

Operating ambient temperature Ta ( °C)

P-ch MOS FET ON resistance RONP (Ω)

Operating ambient temperature Ta ( °C)

N-ch MOS FET ON resistance RONN (Ω)

Input voltage VIN (V)

CTL threshold voltage VTH (V)

MOS FET ON resistance vs.

Input voltage

P-ch MOS FET ON resistance vs.

Operating ambient temperature

N-ch MOS FET ON resistance vs.

Operating ambient temperature

CTL threshold voltage VTH vs.

Input voltage

VTHHCT : OFF → ON

VTHLCT : ON → OFF

MB39C014

24 DS04-27253-1E

(Continued)

500

1000

1500

2000

2500

3000

−50 0 +50 +100

2632

+85

1053

500

1000

1500

2000

2500

3000

−50 0 +50 +100

980

+85

392

Operating ambient temperature Ta ( °C)

Power dissipation PD (mW)

Operating ambient temperature Ta ( °C)

Power dissipation PD (mW)

Power dissipation vs. Operating

ambient temperature

(With thermal via)

Power dissipation vs. Operating

ambient temperature

(without thermal via)

MB39C014

DS04-27253-1E 25

• Switching waveforms

: 500 mA/div

: 2.0 V/div

OUT

: 20 mV/div

Ta = +25 °C

= 3.7 V

OUT

= 2.5 V

OUT

= 800 mA

1 µs/div

MB39C014

26 DS04-27253-1E

•Startup waveform

CTL

: 5.0 V/div

: 500 mA/div

OUT

: 1.0 V/div

10 ms/div

Ta = +25 °C

VIN = 3.7 V

VOUT = 2.5 V

IOUT = 0 A

VREFIN Capacitor value =

0.1 µF

Ta = +25 °C

= 3.7 V

OUT

= 2.5 V

OUT

= 0 A

CTL

2.0 V/div

500 mA/div

OUT

1.0 V/div

20 µs/div

No VREFIN Capacitor

MB39C014

DS04-27253-1E 27

• Output waveforms at sudden load changes (0 mA ↔ 800 mA)

• Output waveforms at sudden load changes (100 mA ↔ 800 mA)

Ta = +25 °C

VIN = 3.7 V

VOUT = 2.5 V

10 µs/div

OUT

: 100 mV/div

OUT

= 0 mA I

OUT

= 800 mA I

OUT

= 0 mA

VREFIN Capacitor value =

0.1 µF

Ta = +25°C

VIN = 3.7 V

VOUT = 2.5 V

OUT

= 100 mA I

OUT

= 800 mA I

OUT

= 100 mA

OUT

: 100 mV/div

10 µs/div

VREFIN Capacitor value =

0.1 µF

MB39C014

28 DS04-27253-1E

■APPLICATION CIRCUIT EXAMPLES

• APPLICATION CIRCUIT EXAMPLE 1

• An external voltage is input to the reference voltage external input (VREFIN) , and the VOUT voltage is set to

2.97 times the VOUT setting gain.

• APPLICATION CIRCUIT EXAMPLE 2

• The voltage of VREF pin is input to the reference voltage external input (VREFIN) by the dividing resistors.

The VOUT voltage is set to 2.5 V.

OUT

= 2.97 × V

REFIN

CPU V

OUT

APLI

DAC

4.7 µF

2.2 µH

1 MΩ

VDD

CTL

FSEL

VREF

VREFIN

GND

OUT

POWER

GOOD

MODE

L (OPEN) = 2.0 MHz

H = 3.2 MHz

OUT = 2.97 × VREFIN

VOUT = 2.97 ×

(VREF = 1.20 V)

VREFIN = R4

R3 + R4

300 kΩ

VDD

CTL

FSEL

VREF

VREFIN GND

OUT

POWER

GOOD

MODE

L (OPEN) = 2.0 MHz

R3 127.5 kΩ

H = 3.2 MHz

VOUT

APLI

4.7 µF

2.2 µH

(120 kΩ + 7.5 kΩ)

CPU

1 MΩ

VIN

4.7 µF

× VREF

× 1.20 V = 2.5 V

300 kΩ

127.5 kΩ + 300 kΩ

MB39C014

DS04-27253-1E 29

• Application Circuit Example Components List

TDK : TDK Corporation

FDK : FDK Corporation

KOA : KOA Corporation

Component Item Part Number Specification Package Vendor

L1 Inductor VLF4012AT-2R2M 2.2 µH, RDC = 76 mΩSMD TDK

MIPW3226D2R2M 2.2 µH, RDC = 100 mΩSMD FDK

C1 Ceramic

capacitor C2012JB1A475K 4.7 µF (10 V) 2012 TDK

C2 Ceramic

capacitor C2012JB1A475K 4.7 µF (10 V) 2012 TDK

R3 Resistor RK73G1JTTD D 7.5 kΩ

RK73G1JTTD D 120 kΩ

7.5 kΩ

120 kΩ

1608

1608 KOA

R4 Resistor RK73G1JTTD D 300 kΩ300 kΩ1608 KOA

R5 Resistor RK73G1JTTD D 1 MΩ ± 0.5%1608 KOA

MB39C014

30 DS04-27253-1E

■USAGE PRECAUTIONS

1. Do not configure the IC over the maximum ratings

lf the lC is used over the maximum ratings, the LSl may be permanently damaged.

It is preferable for the device to normally operate within the recommended usage conditions. Usage outside of

these conditions can adversely affect reliability of the LSI.

2. Use the devices within recommended operating conditions

The recommended operating conditions are the conditions under which the LSl is guaranteed to operate.

The electrical ratings are guaranteed when the device is used within the recommended operating conditions

and under the conditions stated for each item.

3. Take appropriate static electricity measures.

• Containers for semiconductor materials should have anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

4. Do not apply negative voltages.

The use of negative voltages below − 0.3 V may create parasitic transistors on LSI lines, which can cause

abnormal operation.

■ORDERING INFORMATION

Part number Package

MB39C014PN 10-pin plastic SON

(LCC-10P-M04)

MB39C014

DS04-27253-1E 31

■RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LSI products of FUJITSU MICROELECTRONICS with “E1” are compliant with RoHS Directive, and has

observed the standard of lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), and

polybrominated diphenylethers (PBDE).

A product whose part number has trailing characters “E1” is RoHS compliant.

■MARKING FORMAT (LEAD FREE VERSION)

■LABELING SAMPLE (LEAD FREE VERSION)

INDEX

XXXXX

Lead-free version

Lead-free mark

JEITA logo JEDEC logo

The part number of a lead-free product has the trailing

characters “E1”.

MB39C014

32 DS04-27253-1E

■EVALUATION BOARD SPECIFICATION

The MB39C014 Evaluation Board provides the proper environment for evaluating the efficiency and other

characteristics of the MB39C014.

• Terminal information

• Startup terminal information

• Jumper information

Symbol Functions

VIN

Power supply terminal.

In standard condition 3.1 V to 5.5 V*.

* When the VIN/VOUT difference is to be held within 0.6 V or less, such as for devices

with a standard output voltage (VOUT = 2.5 V) when VIN < 3.1 V, FUJITSU MICRO-

ELECTRONICS recommends changing the output capacity (C1) to 10 µF.

VOUT Output terminal.

VCTL Power supply terminal for setting the CTL terminal.

Use this terminal by connecting with CTL.

CTL

Direct supply terminal of CTL.

CTL = 0 V to 0.80 V (Typ.) : Shutdown

CTL = 0.95 V (Typ.) to VIN : Normal operation

MODE TEST terminal

OPEN or GND

VREF Reference voltage output terminal.

VREF = 1.20 V (Typ.)

VREFIN External reference voltage input terminal.

When an external reference voltage is supplied, connect to this terminal.

FSEL

Operating frequency range setting terminal.

FSEL = 0 V : 2.0 MHz operation

FSEL = VIN : 3.2 MHz operation*

* FUJITSU MICROELECTRONICS recommends changing the inductor to 1.5 µH.

POWERGOOD POWERGOOD output terminal.

"High" level output when if OUT voltage reaches 97% or more of output setting voltage.

PGND Ground terminal.

Connect power supply GND to the PGND terminal next to the VOUT terminal.

AGND Ground terminal.

Terminal name Condition Functions

CTL L : Open

H : Connect to VCTL

ON/OFF switch for the IC.

L : Shutdown

H : Normal operation

FSEL L : Open

H : Connect to VCTL

Setting switch of FSEL terminal.

L : 2.0 MHz operation

H : 3.2 MHz operation.

JP Functions

JP1 Short-circuited in the layout pattern of the board (normally used shorted).

JP2 Normally used shorted (0 Ω)

MB39C014

DS04-27253-1E 33

• Setup and checkup

(1) Setup

(1) -1. Connect the CTL terminal to the VCTL terminal.

(1) -2. Connect the power supply terminal to the VIN terminal, and the power supply GND terminal to the

PGND terminal. (Example of setting power supply voltage : 3.7 V)

(2) Checkup

Supply power to VIN. The IC is operating normally if VOUT = 2.5 V (Typ).

MB39C014

34 DS04-27253-1E

• Component layout on the evaluation board (Top View)

PGND

VOUT

VREFIN FSEL

FSEL

CTL

MODE

POWER_GOOD

VREF

AGND

MB39C014EVB-06

Rev.1.0

VIN

R3-1

SW1

VCTL

CTL

JP2

R3-2

JP1

Short

Open

Top Side (Component side )

Bottom Side (Soldering side)

MB39C014

DS04-27253-1E 35

• Evaluation board layout (Top View)

Top Side(Layer1)

Inside GND(Layer3)

Inside GND(Layer2)

Bottom Side(Layer4)

MB39C014

36 DS04-27253-1E

• Connection diagram

JP2

JP1

VIN

VOUT

R3-1

VCTL

CTL

VREF

VREFIN

OUT

MB39C014

PGND

MODE

SW1

R3-2

CTL

MODE

VREF

VREFIN GND

OUT

POWER

GOOD

VDD

FSEL

SW1

FSEL

POWER

GOOD

SW1

AGND

* Not mounted

MB39C014

DS04-27253-1E 37

• Component list

Note : These components are recommended based on the operating tests authorized.

FML : FUJITSU MICROELECTRONICS LIMITED

TDK : TDK Corporation

KOA : KOA Corporation

SSM : SUSUMU Co., Ltd

■EV BOARD ORDERING INFORMATION

Component Part Name Model Number Specification Package Vendor Remark

M1 IC MB39C014PN ⎯SON10 FML

L1 Inductor VLF4012AT-2R2M 2.2 µH,

RDC = 76 mΩSMD TDK

C1 Ceramic

capacitor C2012JB1A475K 4.7 µF (10 V) 2012 TDK

C2 Ceramic

capacitor C2012JB1A475K 4.7 µF (10 V) 2012 TDK

C6 Ceramic

capacitor C1608JB1H104K 0.1 µF (50 V) 1608 TDK

R1 Resister RK73G1JTTD D 1 MΩ1 MΩ ± 0.5%1608 KOA

R3-1 Resister RR0816P-752-D 7.5 kΩ ± 0.5%1608 SSM

R3-2 Resister RR0816P-124-D 120 kΩ ± 0.5%1608 SSM

R4 Resister RR0816P-304-D 300 kΩ ± 0.5%1608 SSM

R5 Resister RK73G1JTTD D 1 MΩ1 MΩ ± 0.5%1608 KOA

SW1 Switch ⎯⎯⎯⎯

Not

mounted

JP1 Jumper ⎯⎯⎯⎯

Pattern-

shorted

JP2 Jumper RK73Z1J (50 mΩ, Max) 1 A 1608 KOA

EV Board Part No. EV Board Version No. Remarks

MB39C014EVB-06 MB39C014EVB-06 Rev.1.0 SON10

MB39C014

38 DS04-27253-1E

■PACKAGE DIMENSION

10-pin plastic SON Lead pitch 0.50 mm

Package width ×

package length 3.00 mm × 3.00 mm

Sealing method Plastic mold

Mounting height 0.75 mm MAX

Weight 0.018 g

10-pin plastic SON

(LCC-10P-M04)

2008 FUJITSU MICROELECTRONICS LIMITED C10004S-c-1-2

INDEX AREA

(.118±.004)

3.00±0.10

(.067±.004)

3.00±0.10

(.118±.004)

1.70±0.10

2.40±0.10

(.094±.004)

0.50(.020)

TYP

1PIN CORNER

(C0.30(C.012))

MAX

0.75(.030)

0.15(.006)

(.016±.004)

0.40±0.10

(.010±.001)

0.25±0.03

1 5

10 6

0.05(.002)

(.000 )

0.00 –0.00

+0.05

–.000

+.002

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

MB39C014

DS04-27253-1E 39

MEMO

MB39C014

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen,

Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

Korea

FUJITSU MICROELECTRONICS KOREA LTD.

206 KOSMO TOWER, 1002 Daechi-Dong,

Kangnam-Gu,Seoul 135-280

Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://www.fmk.fujitsu.com/

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE LTD.

151 Lorong Chuan, #05-08 New Tech Park,

Singapore 556741

Tel: +65-6281-0770 Fax: +65-6281-0220

http://www.fujitsu.com/sg/services/micro/semiconductor/

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm.3102, Bund Center, No.222 Yan An Road(E),

Shanghai 200002, China

Tel: +86-21-6335-1560 Fax: +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road

Tsimshatsui, Kowloon

Hong Kong

Tel: +852-2377-0226 Fax: +852-2376-3269

http://cn.fujitsu.com/fmc/tw

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporat-

ing the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect

to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in

nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in

weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited Strategic Business Development Dept.