MRF8P20100HR3 MRF8P20100HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1880 to
2025 MHz and GSM EDGE base station applications with frequencies from
1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular
base station modulation formats.
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 400 mA, VGSB =1.3Vdc,P
out = 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
2025 MHz 16.0 44.3 7.8 --33.5
1880 MHz
!Typical Doherty Single--Carrier W--CDMA Performance: VDD =28Volts,
IDQA = 400 mA, VGSB =1.3Vdc,P
out = 20 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.2 43.5 7.6 --30.8
1900 MHz 16.1 43.4 7.6 --32.6
1920 MHz 15.8 42.9 7.6 --34.6
GSM EDGE
!Typical GSM EDGE Performance: VDD =28Volts,I
DQA =I
DQB = 330 mA,
Pout = 42 Watts Avg.
Frequency
Gps
(dB)
"D
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz 17.1 43.8 --58.4 --74.4 3.0
1840 MHz 17.3 42.4 --60.0 --75.5 2.6
1880 MHz 17.1 41.7 --60.5 --75.3 2.4
Features
!Production Tested in a Symmetrical Doherty Configuration
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
!Internally Matched for Ease of Use
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!Designed for Digital Predistortion Error Correction Systems
!RoHS Compliant
!In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Document Number: MRF8P20100H
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
1805--2025 MHz, 20 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8P20100HR3
MRF8P20100HSR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF8P20100HSR3
(Top View)
RFoutA/VDSA
31
Figure 1. Pin Connections
42
RFoutB/VDSB
RFinA/VGSA
RFinB/VGSB
CASE 465M--01, STYLE 1
N I -- 7 8 0 -- 4
MRF8P20100HR3
#Freescale Semiconductor, Inc., 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg --65 to +150 $C
Case Operating Temperature TC150 $C
Operating Junction Temperature (1,2) TJ225 $C
EDGE Operation @ TC=25$C(1)
Derate above 25$C
EDGE 120
0.6
W (PEP)
W (PEP)/$C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 74$C, 20 W CW, 2025 MHz
28 Vdc, IDQA = 400 mA
28 Vdc, VGSB =1.3Vdc
Case Temperature 80$C, 42 W CW, 1805 MHz
28 Vdc, IDQA =I
DQB = 330 mA
R%JC
0.88
0.88
0.59
$C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (TA=25$C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 &Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 &Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 &Adc
On Characteristics (4)
Gate Threshold Voltage
(VDS =10Vdc,I
D=75&Adc)
VGS(th) 1.2 1.9 2.7 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
DA = 400 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.7 3.5 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1Adc)
VDS(on) 0.1 0.2 0.3 Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRF8P20100HR3 MRF8P20100HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA=25$C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1,2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,P
out =20WAvg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Power Gain Gps 15.0 16.0 18.0 dB
Drain Efficiency "D42.0 44.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.2 7.8 —dB
Adjacent Channel Power Ratio ACPR —--33.5 --31.0 dBc
Typical Performance (2) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,
2010--2025 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —78 — W
Pout @ 3 dB Compression Point, CW P3dB —126 — W
IMD Symmetry @ 20 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—46 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —53 —MHz
Gain Flatness in 15 MHz Bandwidth @ Pout =20WAvg. GF—0.1 —dB
Gain Variation over Temperature
(--30$Cto+85$C)
(G — 0.013 —dB/$C
Output Power Variation over Temperature
(--30$Cto+85$C)
(P1dB —0.004 —dBm/$C
Typical Broadband Performance — 1880 MHz (2) (In Freescale 1880 MHz Doherty Test Fixture, 50 ohm system) VDD =28Vdc,I
DQA =
400 mA, VGSB =1.3Vdc,P
out = 20 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ '5MHzOffset.
Frequency
Gps
(dB)
"D
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz 16.2 43.5 7.6 --30.8
1900 MHz 16.1 43.4 7.6 --32.6
1920 MHz 15.8 42.9 7.6 --34.6
Typical GSM EDGE Performance (3) (In Freescale Class AB Test Fixture, 50 ohm system) VDD =28Volts,I
DQA =I
DQB = 330 mA,
Pout = 42 Watts Avg., 1805--1880 MHz EDGE Modulation
Frequency
Gps
(dB)
"D
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz 17.1 43.8 --58.4 --74.4 3.0
1840 MHz 17.3 42.4 --60.0 --75.5 2.6
1880 MHz 17.1 41.7 --60.5 --75.3 2.4
1. Part internally matched both on input and output.
2. Measurement made with device in a Symmetrical Doherty configuration.
3. Measurement made with device in quadrature combined configuration.
4
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
Figure 2. MRF8P20100HR3(HSR3) Test Circuit Component Layout
MRF8P20100
Rev. 1
R2
VGSA B1
C13
C3
R4
C7
C1
Z1
C2
C8
R5
C4
C14
R1
R3 B2 C20
VGSB VDSB
C18
C6 C16
C10
C12
VDSA
C11
C9
C
P
C17
C5
C15
C19
CUT OUT AREA
Table 5. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B2 RF Ferrite Beads MPZ2012S300AT000 TDK
C1, C2, C3, C4, C5, C6 15 pF Chip Capacitors ATC600F150JT250XT ATC
C7, C8 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C9, C10 1.2 pF Chip Capacitors ATC600F1R2BT250XT ATC
C11, C12 10 pF Chip Capacitors ATC600F100JT250XT ATC
C13, C14 4.7 &F, 50 V Chip Capacitors C4532X5R1H475MT TDK
C15, C16 10 &F, 50 V Chip Capacitors C5750X7R1H106KT TDK
C17, C18 22 &F, 50 V Chip Capacitors C5750KF1H226ZT TDK
C19, C20 220 &F, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp
R1 50 ), 4 W Chip Resistor ATCCW12010T0050GBK ATC
R2, R3 10 K), 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
R4, R5 12 ), 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
Z1 1900 MHz Band 90$, 3 dB Chip Hybrid Coupler 1P503S Anaren
PCB 0.020*,+r=3.5 RO4350B Rogers
MRF8P20100HR3 MRF8P20100HSR3
5
RF Device Data
Freescale Semiconductor
4
,
2
,
2
,
4
,
2
,
2
,
Single--ended
Quadrature combined
Doherty
Push--pull
4
,
4
,
4
,
4
,
Figure 3. Possible Circuit Topologies
6
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
1880
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
14
17
16.7
16.4
-- 3 5
46
44
42
40
-- 2 5
-- 2 7
-- 2 9
-- 3 1
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
16.1
15.8
15.5
15.2
14.9
14.6
14.3
1900 1920 1940 1960 1980 2000 2020 2040
38
-- 3 3
-- 3 0
PARC
PARC (dB)
-- 2 . 3
-- 1 . 5
-- 1 . 7
-- 1 . 9
-- 2 . 1
-- 2 . 5
ACPR (dBc)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 0
-- 2 0
-- 3 0
-- 4 0
-- 6 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 5 0
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 20 W (PEP)
IDQA = 400 mA, VGSB =1.3Vdc
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
0
Pout, OUTPUT POWER (WATTS)
-- 2
-- 4
-- 6
10
-- 1
-- 3
-- 5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
020 30 50
0
60
50
40
30
20
10
"D-DRAIN EFFICIENCY (%)
--1dB=9W
--2dB=17.5W
-- 3 d B = 2 6 W
40
"D
ACPR
PARC
ACPR (dBc)
-- 5 5
-- 2 5
-- 3 0
-- 3 5
-- 4 5
-- 4 0
-- 5 0
17
Gps, POWER GAIN (dB)
16.5
16
15.5
15
14.5
14
Gps
VDD =28Vdc,P
out =20W(Avg.),I
DQA = 400 mA
VGSB = 1.3 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR =
9.9 dB @ 0.01% Probability
on CCDF
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2017.5 MHz
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc
f = 2017.5 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
MRF8P20100HR3 MRF8P20100HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
1
Gps ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
12
18
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
17
16
10 100
10
-- 6 0
ACPR (dBc)
15
14
13
0
-- 3 0
-- 4 0
-- 5 0
Figure 8. Broadband Frequency Response
0
18
1800
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 400 mA
VGSB =1.3Vdc
12
9
6
1835
GAIN (dB)
15
Gain
1870 1905 1940 1975 2010 2045 2080
IRL
-- 2 4
0
-- 4
-- 8
-- 1 2
-- 1 6
IRL (dB)
3--20
2010 MHz 2017.5 MHz
2025 MHz
2025 MHz
2017.5 MHz
2010 MHz
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth
"D
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
W--CDMA TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
1
0.1
0.01
0.001
2468
PROBABILITY (%)
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ '5MHzOffset.
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
Input Signal
12
-- 6 0
--100
10
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
3.84 MHz
Channel BW
7.21.8 5.43.60-- 1 . 8-- 3 . 6-- 5 . 4-- 9 9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
-- 7 . 2
--ACPR in 3.84 MHz
Integrated BW
+ACPRin3.84MHz
Integrated BW
-- 1 0
0
8
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,P
out =20WAvg.
f
MHz
Zsource
)
Zload
)
1880 3.23 -- j10.1 6.35 -- j5.32
1900 3.36 -- j9.78 6.64 -- j5.29
1920 3.42 -- j9.61 6.86 -- j5.42
1940 3.33 -- j9.44 6.94 -- j5.64
1960 3.22 -- j9.16 6.99 -- j5.82
1980 3.31 -- j8.90 7.17 -- j6.03
2000 3.48 -- j8.87 7.33 -- j6.46
2020 3.39 -- j8.92 7.10 -- j6.92
2040 3.13 -- j8.58 6.64 -- j6.97
Note: Measured with Peaking side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 11. Series Equivalent Source and Load Impedance — Carrier Side
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,P
out =20WAvg.
f
MHz
Zsource
)
Zload
)
1880 3.83 -- j10.28 0.67 -- j7.03
1900 3.88 -- j10.00 0.68 -- j6.71
1920 3.82 -- j9.81 0.62 -- j6.43
1940 3.61 -- j9.59 0.48 -- j6.11
1960 3.50 -- j9.30 0.35 -- j5.70
1980 3.58 -- j9.10 0.35 -- j5.32
2000 3.61 -- j9.13 0.35 -- j5.07
2020 3.43 -- j9.10 0.21 -- j4.75
2040 3.10 -- j8.55 0.10 -- j4.19
Note: Measured with Carrier side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 12. Series Equivalent Source and Load Impedance — Peaking Side
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P20100HR3 MRF8P20100HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
27
Pin, INPUT POWER (dBm)
VDD =28Vdc, I
DQA = 400 mA, Pulsed CW, 10 &sec(on), 10% Duty Cycle
47
43
39
29
49
45
33
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
41
51
55
2521 371917
53
37
35
15
Ideal
Actual
23 31 33 35
2010 MHz
2025 MHz
2010 MHz
2025 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
2010 62 47.9 76 48.8
2025 63 48.0 78 48.9
Test Impedances per Compression Level
f
(MHz)
Zsource
)
Zload
)
2010 P1dB 2.83 -- j12.46 3.18 -- j6.16
2025 P1dB 3.43 -- j13.20 3.16 -- j6.14
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
10
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
ALTERNATE CHARACTERIZATION — 1880 MHz
Figure 14. MRF8P20100HR3(HSR3) Test Circuit Component Layout — 1880 MHz
--
--
MRF8P20100
Rev. 2
CUT OUT AREA
C12
VGSA
VGSB VDSB
VDSA
B1
C3
R1
C1
Z1
C2
R2
C4
C13
B2
C6 C15
C17
C19
C10
C11
C8
C7*
C9
C5 C14
C16
C18
*C7 and C8 are mounted vertically.
C8*
R3
C
P
Table 6. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — 1880 MHz
Part Description Part Number Manufacturer
B1, B2 RF Ferrite Beads MPZ2012S300AT000 TDK
C1, C2, C3, C4, C5, C6 12 pF Chip Capacitors ATC600F120JT250XT ATC
C7, C8 10 pF Chip Capacitors ATC600F100JT250XT ATC
C9, C10, C11 1.5 pF Chip Capacitors ATC600F1R5BT250XT ATC
C12, C13 4.7 &F, 50 V Chip Capacitors C4532X5R1H475MT TDK
C14, C15 10 &F, 50 V Chip Capacitors C5750X7R1H106KT TDK
C16, C17 22 &F, 50 V Chip Capacitors C5750KF1H226ZT TDK
C18, C19 220 &F, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp
R1, R2 12 ), 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
R3 50 ), 4 W Chip Resistor CW12010T0050GBK ATC
Z1 1900 MHz Band 90$, 3 dB Chip Hybrid Coupler 1P503S Anaren
PCB 0.020*,+r=3.5 RO4350B Rogers
MRF8P20100HR3 MRF8P20100HSR3
11
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — 1880 MHz
IRL, INPUT RETURN LOSS (dB)
1880
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 15. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 20 Watts Avg.
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
13
17
16.6
16.2
-- 3 8
46
44
42
40
-- 2 8
-- 3 0
-- 3 2
-- 3 4
"D, DRAIN
EFFICIENCY (%)
"D
Gps, POWER GAIN (dB)
15.8
15.4
15
14.6
14.2
13.8
13.4
1900 1920 1940 1960 1980 2000 2020 2040
38
-- 3 6
-- 3 0
PARC
PARC (dB)
-- 2 . 4
-- 2
-- 2 . 1
-- 2 . 2
-- 2 . 3
-- 2 . 5
ACPR (dBc)
VDD =28Vdc,P
out =20W(Avg.),I
DQA = 400 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR =
9.9 dB @ 0.01% Probability
on CCDF
1
Gps ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 16. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
11
17
0
60
50
40
30
20
"D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
16
15
10 100
10
-- 6 0
ACPR (dBc)
14
13
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 17. Broadband Frequency Response
0
18
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA = 400 mA
VGSB =1.3Vdc
12
9
6
GAIN (dB)
15 Gain
IRL
-- 1 8
0
-- 3
-- 6
-- 9
-- 1 2
IRL (dB)
3--15
1880 MHz
1920 MHz
"D
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
1900 MHz
1920 MHz
1900 MHz
1880 MHz
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc
Single--Carrier W--CDMA
1800 1835 1870 1905 1940 1975 2010 2045 2080
12
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,P
out =20WAvg.
f
MHz
Zsource
)
Zload
)
1880 2.22 -- j7.34 6.32 -- j6.84
1900 2.27 -- j7.04 6.13 -- j6.84
1920 2.35 -- j6.75 5.91 -- j6.87
1940 2.41 -- j6.52 5.61 -- j6.97
1960 2.40 -- j6.33 5.25 -- j7.09
1980 2.42 -- j6.19 4.95 -- j7.22
2000 2.45 -- j6.17 4.62 -- j7.41
2020 2.34 -- j6.19 4.09 -- j7.46
2040 2.15 -- j5.91 3.56 -- j7.08
Note: Measured with Peaking side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 18. Series Equivalent Source and Load Impedance — Carrier Side — 1880 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28Vdc,I
DQA = 400 mA, VGSB =1.3Vdc,P
out =20WAvg.
f
MHz
Zsource
)
Zload
)
1880 2.67 -- j6.62 0.50 -- j3.80
1900 2.71 -- j6.34 0.66 -- j3.23
1920 2.76 -- j6.11 0.88 -- j2.69
1940 2.69 -- j5.98 1.10 -- j2.22
1960 2.62 -- j5.84 1.36 -- j1.80
1980 2.58 -- j5.76 1.66 -- j1.45
2000 2.50 -- j5.75 2.03 -- j1.17
2020 2.29 -- j5.63 2.37 -- j0.98
2040 2.11 -- j5.23 2.64 -- j0.79
Note: Measured with Carrier side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 19. Series Equivalent Source and Load Impedance — Peaking Side — 1880 MHz
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P20100HR3 MRF8P20100HSR3
13
RF Device Data
Freescale Semiconductor
ALTERNATE CHARACTERIZATION — GSM EDGE
Figure 20. MRF8P20100HR3(HSR3) Test Circuit Component Layout — GSM EDGE
MRF8P20100
Rev. 0
CUT OUT AREA
VGSA
C1
Z1
VGSB
VDDA
VDDB
C2
C3
R2
C4
R1
C8 C7
C5
C6
R3
C24
C22
C21
C20
C19
C18
C17
C15
C16
Z2
C14
C13
C12
C11
C9
C10
C23
U
L
R4
Table 7. MRF8P20100HR3(HSR3) Test Circuit Component Designations and Values — GSM EDGE
Part Description Part Number Manufacturer
C1, C8 2.2 &F, 50 V Chip Capacitors C3225X7R2A225KT TDK
C2, C7 12 pF Chip Capacitors ATC600F120JT250XT ATC
C3, C6 2.7 pF Chip Capacitors ATC600F2R7BT250XT ATC
C4, C5, C11, C20 15 pF Chip Capacitors ATC600F150JT250XT ATC
C9, C22 10 &F, 50 V Chip Capacitors C5750X7R1H106K TDK
C10, C21 4.7 &F, 50 V Chip Capacitors C4532X5R1H475M TDK
C12, C19 0.3 pF Chip Capacitors ATC600F0R3BT250XT ATC
C13, C18 22 pF Chip Capacitors ATC600F220JT250XT ATC
C14, C17 0.6 pF Chip Capacitors ATC600F0R6BT250XT ATC
C15, C16 0.5 pF Chip Capacitors ATC600F0R5BT250XT ATC
C23, C24 220 pF, 63 V Electrolytic Capacitors MCGPR63V227M10X21 Multicomp
R1 50 ), 4 W Chip Resistor CW12010T0050GBK ATC
R2, R3 12 ), 1/4 W Chip Resistors CRCW120612R0FKEA Vishay
R4 50 ), 80 W, Termination SMT3725ALNF EMC
Z1, Z2 1900 MHz Band 90$, 3 dB Chip Hybrid Couplers XC1900E--03 Anaren
PCB 0.020*,+r=3.5 RO4350B Rogers
14
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
TYPICAL CHARACTERISTICS — GSM EDGE
IRL, INPUT RETURN LOSS (dB)
1760
IRL
Gps
f, FREQUENCY (MHz)
Figure 21. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout = 42 Watts Avg.
-- 2 6
-- 1 8
-- 2 0
-- 2 2
-- 2 4
14
18
17.6
17.2
1
40
39
38
37
3.5
3
2.5
2
Gps, POWER GAIN (dB)
16.8
16.4
16
15.6
15.2
14.8
14.4
1780 1800 1820 1840 1860 1880 1900 1920
36
1.5
-- 2 8
"D, DRAIN
EFFICIENCY (%)
"D
300
12
18
0
60
VDD =28Vdc
IDQA =I
DQB = 330 mA
101
15
14
13
30
20
10
Pout, OUTPUT POWER (WATTS) CW
Figure 22. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
Gps
17
16
100
50
40
VDD =28Vdc,P
out =42W(Avg.)
IDQA =I
DQB = 330 mA
EDGE Modulation
"D, DRAIN EFFICIENCY (%)
"D
1805 MHz 1840 MHz
1880 MHz
1805 MHz
1840 MHz
1880 MHz
Figure 23. EVM versus Frequency
f, FREQUENCY (MHz)
Pout =53WAvg.
35 W Avg.
17 W Avg.
EVM, ERROR VECTOR MAGNITUDE (% rms)
1880
0
6
1780
3
1
1860184018201800
4
2
5
VDD =28Vdc
IDQA =I
DQB = 330 mA
EDGE Modulation
-- 7 0
-- 3 5
0
Pout, OUTPUT POWER (WATTS)
-- 4 0
-- 4 5
-- 5 0
-- 6 0
20
Figure 24. Spectral Regrowth at 400 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
40 120
-- 5 5
-- 6 5
60 80 100
VDD =28Vdc
IDQA =I
DQB = 330 mA
EDGE Modulation
1805 MHz
1880 MHz
1840 MHz
EVM, ERROR VECTOR
MAGNITUDE (% rms)
EVM
MRF8P20100HR3 MRF8P20100HSR3
15
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — GSM EDGE
-- 8 0
-- 4 5
0
Pout, OUTPUT POWER (WATTS)
-- 5 0
-- 5 5
-- 6 0
-- 7 0
20
Figure 25. Spectral Regrowth at 600 kHz
versus Output Power
SPECTRAL REGROWTH @ 400 kHz (dBc)
40 120
-- 6 5
-- 7 5
60 80 100
VDD =28Vdc
IDQA =I
DQB = 330 mA
EDGE Modulation
1805 MHz
1880 MHz
1840 MHz
Pout, OUTPUT POWER (WATTS) AVG.
300
4
10
8
6
0
101
2
24
60
48
36
0
12
Figure 26. EVM and Drain Efficiency
versus Output Power
EVM, ERROR VECTOR MAGNITUDE (% rms)
EVM
"D
"D, DRAIN EFFICIENCY (%)
VDD =28Vdc
IDQA =I
DQB = 330 mA
EDGE Modulation
Figure 27. Broadband Frequency Response
0
18
1450
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQA =I
DQB = 330 mA
12
9
6
1615
GAIN (dB)
15 Gain
1780 1945 2110 2275 2440 2605 2770
IRL
-- 3 6
0
-- 6
-- 1 2
-- 1 8
-- 2 4
IRL (dB)
3--30
100
1805 MHz
1880 MHz
1840 MHz
1880 MHz
1840 MHz
1805 MHz
16
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
VDD =28Vdc,I
DQA =I
DQB = 330 mA, Pout =42WAvg.
f
MHz
Zsource
)
Zload
)
1760 3.12 -- j7.74 4.39 -- j7.66
1780 3.13 -- j7.35 4.44 -- j7.38
1800 3.21 -- j7.12 4.50 -- j7.30
1820 3.20 -- j7.05 4.42 -- j7.31
1840 3.08 -- j6.98 4.26 -- j7.28
1860 2.95 -- j6.82 4.10 -- j7.15
1880 2.88 -- j6.57 4.00 -- j6.92
1900 2.87 -- j6.21 3.95 -- j6.62
1920 2.89 -- j5.85 3.94 -- j6.36
Note: Measured with Lower side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 28. Series Equivalent Source and Load Impedance — Upper Side — GSM EDGE
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
VDD =28Vdc,I
DQA =I
DQB = 330 Vdc, Pout =42WAvg.
f
MHz
Zsource
)
Zload
)
1760 3.72 -- j7.89 3.55 -- j5.43
1780 3.77 -- j7.60 3.62 -- j5.09
1800 3.82 -- j7.48 3.76 -- j4.85
1820 3.72 -- j7.46 3.87 -- j4.75
1840 3.55 -- j7.37 3.90 -- j4.66
1860 3.39 -- j7.16 3.92 -- j4.52
1880 3.29 -- j6.85 3.96 -- j4.31
1900 3.24 -- j6.48 4.03 -- j4.02
1920 3.22 -- j6.17 4.13 -- j3.71
Note: Measured with Upper side open.
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 29. Series Equivalent Source and Load Impedance — Lower Side — GSM EDGE
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF8P20100HR3 MRF8P20100HSR3
17
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
18
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
MRF8P20100HR3 MRF8P20100HSR3
19
RF Device Data
Freescale Semiconductor
20
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
MRF8P20100HR3 MRF8P20100HSR3
21
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
!.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2010 !Initial Release of Data Sheet
22
RF Device Data
Freescale Semiconductor
MRF8P20100HR3 MRF8P20100HSR3
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Document Number: MRF8P20100H
Rev. 0, 4/2010
