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MRF9030LSR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large-signal, common - source amplifier applications in 26 volt
base station equipment.
•Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — -32.5 dBc
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
Features
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS - 0.5, +68 Vdc
Gate- Source Voltage VGS - 0.5, + 15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD117
0.67
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.5 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)
Document Number: MRF9030
Rev. 7, 9/2008
Freescale Semiconductor
Technical Data
MRF9030LSR1
945 MHz, 30 W, 26 V
LATERAL N -CHANNEL
BROADBAND
RF POWER MOSFET
CASE 360C-05, STYLE 1
NI- 360S
Freescale Semiconductor, Inc., 2008. All rights reserved.
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RF Device Data
Freescale Semiconductor
MRF9030LSR1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th) 2 2.9 4 Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q) — 3.8 — Vdc
Drain-Source On- Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on) — 0.19 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs — 3 — S
Dynamic Characteristics
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 49.5 — pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 26.5 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 1 — pF
(continued)
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MRF9030LSR1
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two- Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps 18 19 — dB
Two- Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η37 41.5 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD — -32.5 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL — - 15.5 -9 dB
Two- Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps — 19 — dB
Two- Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η— 41.5 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD — -33 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL — -14 — dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
P1dB — 30 — W
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
Gps — 19 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA,
f1 = 945.0 MHz)
η— 60 — %
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RF Device Data
Freescale Semiconductor
MRF9030LSR1
Z11
C17
Figure 1. 945 MHz Broadband Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1 Z2
VGG
C1
L1
VDD
B1 Short Ferrite Bead
B2 Long Ferrite Bead
C1, C8, C13, C14 47 pF Chip Capacitors
C2, C4 0.8 pF to 8.0 pF Trim Capacitors
C3 3.9 pF Chip Capacitor
C5, C6 7.5 pF Chip Capacitors
C7, C15, C16 10 µF, 35 V Tantalum Capacitors
C9, C10 10 pF Chip Capacitors
C11 9.1 pF Chip Capacitor
C12 0.6 pF to 4.5 pF Trim Capacitor
C17 220 µF, 50 V Electrolytic Capacitor
L1, L2 12.5 nH Surface Mount Inductors
Z1 0.260″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.215″ x 0.270″ Microstrip
Z5 0.315″ x 0.270″ Microstrip
Z6 0.160″ x 0.270″x 0.520″, Taper
Z7 0.285″ x 0.520″ Microstrip
Z8 0.450″ x 0.270″ Microstrip
Z9 0.140″ x 0.270″ Microstrip
Z10 0.250″ x 0.060″ Microstrip
Z11 0.720″ x 0.060″ Microstrip
Z12 0.490″ x 0.060″ Microstrip
Z13 0.290″ x 0.060″ Microstrip
PCB Taconic RF -35- 0300, 30 mil,
εr = 3.55
Z3 Z8 Z9
Z7
Z5 Z6
L2
B2
Z4 Z10
C15
Figure 2. 945 MHz Broadband Test Circuit Component Layout
B1
C1 C2 C3
C5
C7
C8
C9
C10
C6 C11 C12
C13
C14 C15 C16
C17
L1 L2
Rev−02
900 MHz
MRF9030
C7
C2
C5
C16
C9
Z12 Z13
C4
C13
CUT OUT AREA
++++
DUT
C8 C14
C3 C4 C6 C10 C11 C12
VGG
VDD
RF INPUT RF OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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MRF9030LSR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
960
12
20
930
−38
50
IRL
Gps
η
IMD
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two−Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
Gps, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)IMD,
, DRAIN EFFICIENCY (%)η
19 45
18 40
17 35
16 −30
15 −32
14 −34
13 −36
955950945940935
−18
−10
−12
−14
−16
INPUT RETURN LOSS (dB)IRL,
100
17
20
1
IDQ = 375 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Gps, POWER GAIN (dB)
19.5
19
18.5
18
17.5
10
250 mA
200 mA
100
−60
−50
1
IDQ = 200 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−30
−40
10
375 mA
250 mA
100
−70
0
1
3rd Order
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
10
−10
−20
−30
−40
−50
−60
5th Order
7th Order
100
10
22
0.1
0
60
Gps
η
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
20 50
18 40
16 30
14 20
12 10
101
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RF Device Data
Freescale Semiconductor
MRF9030LSR1
TYPICAL CHARACTERISTICS
210
1010
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
MTTF FACTOR (HOURS X AMPS2)
90 110 130 150 170 190100 120 140 160 180 200
109
100
8
20
1
−60
60
Gps
η
IMD
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
18 40
16 20
14 0
12 −20
10 −40
10
INTERMODULATION DISTORTION (dBc)IMD,
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Figure 9. MTTF Factor versus Junction Temperature
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MRF9030LSR1
7
RF Device Data
Freescale Semiconductor
f
MHz
Zsource
Ω
Zload
Ω
930
945
960
1.34 - j0.1
1.4 - j0.14
1.36 - j0.2
3.175 + j0.09
3.1 + j0.08
3.0 + j0.05
VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP
Figure 10. Series Equivalent Source and Load Impedance
f = 960 MHz
Zo = 5 Ω
f = 930 MHz f = 930 MHz
f = 960 MHz
Zsource Zload
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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RF Device Data
Freescale Semiconductor
MRF9030LSR1
PACKAGE DIMENSIONS
CASE 360C- 05
ISSUE E
NI- 360S
MRF9030LSR1
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.375 0.385 9.53 9.78
INCHES
B0.225 0.235 5.72 5.97
C0.105 0.155 2.67 3.94
D0.210 0.220 5.33 5.59
E0.035 0.045 0.89 1.14
F0.004 0.006 0.10 0.15
H0.057 1.45
K0.085 0.115 2.16 2.92
M0.355 0.365 9.02 9.27
E
C
SEATING
PLANE
2
0.067 1.70
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
S0.225 0.235 5.72 5.97
aaa 0.005 REF 0.13 REF
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
HF
M
A
M
ccc B M
T
R
(LID)
S
(INSULATOR)
M
A
M
aaa B M
T
M
A
M
bbb B M
T
D2X
B
B
(FLANGE)
M
A
M
ccc B M
T
M
A
M
bbb B M
T
M
(INSULATOR)
T
N
(LID)
A
(FLANGE)
A
K2X
PIN 3
N0.357 0.363 9.07 9.22
R0.227 0.23 5.77 5.92
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MRF9030LSR1
9
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
7Sept. 2008 •Data sheet revised to reflect part status change, p. 1, including use of applicable overlay.
•Data sheet archived. Parts no longer manufactured.
•Added Revision History, p. 9
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RF Device Data
Freescale Semiconductor
MRF9030LSR1
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Document Number: MRF9030
Rev. 7, 9/2008