FGB3440G2_F085 - ON SEMICONDUCTOR

FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Publication Order Number:

FGB3440G2-F085/D

SCIS Energy = 335mJ at TJ = 25oC

Logic Level Gate Drive

Qualified to AEC Q101

RoHS Compliant

Automotive lgnition Coil Driver Circuits

Coil On Plug Applications

FGB3440G2-F085 / FGD3440G2-F085

FGP3440G2-F085

EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT

Features Applications

Package

GATE

COLLECTOR

EMITTER

Symbol

JEDEC TO-252AA

D-Pak

D²-Pak

JEDEC TO-263AB

COLLECTOR

(FLANGE)

JEDEC TO-220AB

Symbol Parameter Ratings Units

BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) 400 V

BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) 28 V

ESCIS25 Self Clamping Inductive Switching Energy (Note 1) 335 mJ

ESCIS150 Self Clamping Inductive Switching Energy (Note 2) 195 mJ

IC25 Collector Current Continuous, at VGE = 4.0V, TC = 25°C 26.9 A

IC110 Collector Current Continuous, at VGE = 4.0V, TC = 110°C 25 A

VGEM Gate to Emitter Voltage Continuous ±10 V

Power Dissipation Total, at TC = 25°C 166 W

Power Dissipation Derating, for TC > 25oC1.1W/

TJOperating Junction Temperature Range -40 to +175 oC

TSTG Storage Junction Temperature Range -40 to +175 oC

TLMax. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) 300 oC

TPKG Max. Lead Temp. for Soldering (Package Body for 10s) 260 oC

ESD Electrostatic Discharge Voltage at100pF, 1500Ω4kV

Device Maximum Ratings TA = 25°C unless otherwise noted

@2014 Semiconductor Components Industries, LLC.

August-2017, Rev.3

FFGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Electrical Characteristics TA = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

BVCER Collector to Emitter Breakdown Voltage

ICE = 2mA, VGE = 0,

RGE = 1KΩ,

TJ = -40 to 150oC

370 400 430 V

BVCES Collector to Emitter Breakdown Voltage

ICE = 10mA, VGE = 0V,

RGE = 0,

TJ = -40 to 150oC

390 420 450 V

BVECS Emitter to Collector Breakdown Voltage ICE = -20mA, VGE = 0V,

TJ = 25°C 28 - - V

BVGES Gate to Emitter Breakdown Voltage IGES = ±2mA ±12 ±14 - V

ICER Collector to Emitter Leakage Current VCE = 250V, RGE=1KΩTJ = 25oC--25μA

TJ = 150oC--1mA

IECS Emitter to Collector Leakage Current VEC = 24V, TJ = 25oC --1

TJ = 150oC--40

R1Series Gate Resistance - 120 - Ω

R2Gate to Emitter Resistance 10K - 30K Ω

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, TJ = 2 5 oC - 1 . 1 1 . 2 V

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, TJ = 150oC-1.31.45V

VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4. 5 V, T J = 150oC-1.61.75V

ESCIS Self Clamped Inductive Switching L = 3.0 mHy, VGE = 5V

RG = 1KΩ, (Note 1) TJ = 25oC - - 335 mJ

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FGB3440G2 FGB3440G2-F085 TO-263AB 330mm16mm 2500

FGD3440G2-F085 TO-252AA 330mm 24mm 800

FGP3440G2-F085 TO-220AB Tube N/A 50

FGD3440G2

FGP3440G2

Notes:

1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting

TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp .

2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting

TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp.

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FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Electrical Characteristics TA = 25°C unless otherwise noted

Dynamic Characteristics

Switching Characteristics

Thermal Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

QG(ON) Gate Charge ICE = 10A, VCE = 12V,

VGE = 5V -24-nC

VGE(TH) Gate to Emitter Threshold Voltage ICE = 1mA, VCE = VGE,

TJ = 25oC 1.3 1.7 2.2 V

TJ = 150oC 0.75 1.2 1.8

VGEP Gate to Emitter Plateau Voltage VCE = 12V, ICE = 1 0 A - 2 . 8 - V

td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω

VGE = 5V, RG = 1KΩ

TJ = 25oC,

-1.04μs

trR Current Rise Time-Resistive - 2.0 7 μs

td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,

VGE = 5V, RG = 1KΩ

ICE =6.5A, TJ = 25oC,

- 5 . 3 1 5 μs

tfL Current Fall Time-Inductive - 2.3 15 μs

RθJC Thermal Resistance Junction to Case - - 0.9 oC/W

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FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Typical Performance Curves

Figure 1. Self Clamped Inductive Switching

Current vs. Time in Clamp

10 100 1000

100

SCIS Curves valid for Vclamp Voltages of <430V

TJ = 150oC

TJ = 25oC

tCLP, TIME IN CLAMP (μS)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1KΩ, VGE = 5V, VCE = 100V

Figure 2.

03691

215

SCIS Curves valid for Vclamp Voltages of <430V

TJ = 150oC

TJ = 25oC

L, INDUCTANCE (mHy)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

RG = 1KΩ, VGE = 5V, VCE = 100V

Self Clamped Inductive Switching

Current vs. Inductance

Figure 3.

-75 -50 -25 0 25 50 75 100 125 150 175

1.00

1.05

1.10

1.15

1.20 ICE = 6A

VGE = 8V

VGE = 5V

VGE = 4.5V

VGE = 4.0V

VGE = 3.7V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ, JUNCTION TEMPERTURE (oC)

Collector to Emitter On-State Voltage

vs. Junction Temperature

Figure 4.

-75 -50 -25 0 25 50 75 100 125 150 175

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50 ICE = 10A

VGE = 8V

VGE = 5V VGE = 4.5V

VGE = 4.0V

VGE = 3.7V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

TJ, JUNCTION TEMPERTURE (oC)

Collector to Emitter On-State Voltage

vs. Junction Temperature

Figure 5.

01234

TJ = -40oC

VGE = 4.5V

VGE = 5.0V

VGE = 3.7V

VGE = 4.0V

VGE = 8.0V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Collector to Emitter On-State Voltage

vs. Collector Current

Figure 6. Collector to Emitter On-State Voltage

vs. Collector Current

01234

TJ = 25oC

VGE = 4.5V

VGE = 5.0V

VGE = 3.7V

VGE = 4.0V

VGE = 8.0V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

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FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Figure 7.

01234

TJ = 175oC

VGE = 4.5V

VGE = 5.0V

VGE = 3.7V

VGE = 4.0V

VGE = 8.0V

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

Collector to Emitter On-State Voltage

vs. Collector Current

Figure 8.

1234

TJ = -40oC

TJ = 25oC

TJ = 175oC

PULSE DURATION = 80μs

DUTY CYCLE = 0.5% MAX

VCE = 5V

ICE, COLLECTOR TO EMITTER CURRENT (A)

VGE, GATE TO EMITTER VOLTAGE (V)

Transfer Characteristics

Figure 9.

25 50 75 100 125 150 175

ICE, DC COLLECTOR CURRENT (A)

TC, CASE TEMPERATURE(oC)

VGE = 4.0V

DC Collector Current vs. Case

Temperature

Figure 10. Threshold Voltage vs. Junction

Temperature

-50 -25 0 25 50 75 100 125 150 175

1.0

1.2

1.4

1.6

1.8

2.0

VCE = VGE

ICE = 1mA

VTH, THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE(oC)

Figure 11.

-50 -25 0 25 50 75 100 125 150 175

0.1

100

1000

10000

VCES = 250V

VCES = 300V

VECS = 24V

TJ, JUNCTION TEMPERATURE (oC)

LEAKAGE CURRENT (μA)

Leakage Current vs. Junction

Temperature

Figure 12.

2550 75 100 125 150 175

Resistive tON

Inductive tOFF

Resistive tOFF

SWITCHING TIME (μS)

TJ, JUNCTION TEMPERATURE (oC)

ICE = 6.5A, VGE = 5V, RG = 1KΩ

Switching Time vs. Junction

Temperature

Typical Performance Curves (Continued)

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FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

Figure 13.

5 101

52025

400

800

1200

1600

2000

f = 1MHz

VGE = 0V

CRES

COES

CIES

VDS, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

Capacitance vs. Collector to Emitter

Voltage

Figure 14.

0 10203040506070

ICE = 10A, TJ = 25oC

VCE = 6V

VGS, GATE TO EMITTER VOLTAGE(V)

Qg, GATE CHARGE(nC)

VCE = 12V

Gate Charge

Figure 15.

10 100 1000 6000

380

400

420

440

TJ = 25oC

TJ = -40oC

TJ = 175oC

ICER = 10mA

RG, SERIES GATE RESISTANCE (Ω)

BVCER, BREAKDOWN VOLTAGE (V)

Break down Voltage vs. Series Gate Resistance

Figure 16.

10-5 10-4 10-3 10-2 10-1 1

0.01

0.1

0.01

0.02

0.05

0.1

SINGLE PULSE

NORMALIZED THERMAL

IMPEDANCE, ZθJC

t, RECTANGULAR PULSE DURATION(s)

DUTY CYCLE - DESCENDING ORDER

D = 0.50

0.2

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

IGBT Normalized Transient Thermal Impedance, Junction to Case

Typical Performance Curves (Continued)

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Test Circuit and Waveforms

Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

RGG

VCC

PULSE

GENDUT RG = 1KΩ+

VCC

DUT

LOAD

VGE

0.01Ω

ISCIS

VCE

VCC

VARY tP TO OBTAIN

REQUIRED PEAK ISCIS

DUT

VCC

VCE

BVCES

ISCIS

tAV

FGB3440G2-F085 / FGD3440G-F085 / FGP3440G2-F085

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FGB3440G2-F085 / FGD3440G2-F085 / FGP3440G2-F085

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