© 2003 IXYS All rights reserved 1 - 2
312
Advanced Technical Information VCO132
IXYS reserves the right to change limits, test conditions and dimensions.
ITRMS = 200A
ITAVM = 130A
VRRM = 800-1800 V
Th yristor Modules
ECO-PAC 2
Features
• Isolation voltage 3600 V~
• Planar glass passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• DC motor control
• Light and temperature control
• Softstart AC motor controller
• Solid state switches
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
• High power density
• Small and light weight
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
VRSM VRRM
VDSM VDRM Typ
VV
9 0 0 8 0 0 VCO 132 - 08io7
1300 1200 VCO 132 - 12io7
1500 1400 VCO 132 - 14io7
1700 1600 VCO 132 - 16io7
1900 1800 VCO 132 - 18io7
Symbol Conditions Maximum Ratings
ITRMS 200 A
ITAVM TC = 85°C; TVJ = 130°C; 180° sine 1 30 A
ITSM TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine 3600 A
t = 8.3 ms (60 Hz), sine 3850 A
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine 3200 A
t = 8.3 ms (60 Hz), sine 3420 A
I2dt TVJ = 45°C; VR = 0 V; t = 10 ms (50 Hz), sine 64800 A2s
t = 8.3 ms (60 Hz), sine 62300 A2s
TVJ = 125°C; VR = 0 V; t = 10 ms (50 Hz), sine 51200 A2s
t = 8.3 ms (60 Hz), sine 49100 A2s
(di/dt)cr TVJ = 125°C; repetitive, IT = 250 A 150 A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3VDRM;
IG = 0.5 A non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.5 A/µs;
(dv/dt)cr TVJ = 125°C; VDR = 2/3VDRM 1000 V/µs
RGK = ∞, method 1 (linear voltage rise)
PGM TVJ = 125°C; tP = 30 ms ≤ 10 W
IT = ITAVM;t
P = 300 ms ≤ 5 W
PGAVM 0.5 W
VRGM 10 V
TVJ -40 ... + 130 °C
TVJM for 10 sec 1 50 °C
Tstg -40 ... + 125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V ~
IISOL < 1 mA t = 1 s 3600 V ~
MdMounting torque (M4) 1.5 - 2.0 Nm
14 - 18 lb.in.
Weight typ. 24 g
VCO 132
K-1
2
ACE-1
SVX-18
E-3
© 2003 IXYS All rights reserved 2 - 2
312
Advanced Technical Information VCO132
Dimensions in mm (1 mm = 0.0394")
Component
Symbol Conditions Characteristic Values
min. typ. max.
ID, IRTVJ = 125°C; VR = VRRM; VD = VDRM 10 mA
VTIT = 200 A; TVJ = 25°C 1.3 V
VTO For power-loss calculations only 0.8 V
rT1.65 mΩ
VGT VD = 6 V; TVJ = 25°C 1.5 V
TVJ = -40°C 1.6 V
IGT VD = 6 V; TVJ = 25°C 3 00 mA
TVJ = -40°C 4 0 0 mA
VGD TVJ = 125°C; VD = 2/3VDRM 0.2 V
IGD TVJ = 125°C; VD = 2/3VDRM 10 mA
ILTVJ = 25°C; tP = 10 µs 450 mA
IG = 0.5 A; diG/dt = 0.5 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞200 mA
tgd TVJ = 25°C; VD = ½ VDRM 2µs
IG = 0.5 A; diG/dt = 0.5 A/µs
RthJC per Thyristor; DC 0.25 K/W
RthJH per T hyris tor; D C; ty p . 0,35 K/W
dSCreeping distance on surface 11.2 mm
dACreeping distance in air 5.0 mm
aMax. allowable acceleration 50 m/s2
