MRF8S26060HR3 MRF8S26060HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency Gps
(dB) hD
(%) Output PAR
(dB) ACPR
(dBc)
2620 MHz 16.3 33.2 6.3 -37.2
2655 MHz 16.3 33.0 6.3 -37.7
2690 MHz 16.3 32.9 6.2 -37.1
•Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 78 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
•Typical Pout @ 1 dB Compression Point ] 60 Watts CW
Features
•100% PAR Tested for Guaranteed Output Power Capability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
•Internally Matched for Ease of Use
•Integrated ESD Protection
•Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
•Designed for Digital Predistortion Error Correction Systems
•Optimized for Doherty Applications
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature (1,2) TJ225 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 15.5 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz
Case Temperature 80°C, 60 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz
RθJC
1.0
0.90
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S26060H
Rev. 0, 4/2010
Freescale Semiconductor
Technical Data
2620-2690 MHz, 15.5 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S26060HR3
MRF8S26060HSR3
CASE 465J-02, STYLE 1
NI-400S-240
MRF8S26060HSR3
CASE 465I-02, STYLE 1
NI-400-240
MRF8S26060HR3
Freescale Semiconductor, Inc., 2010. All rights reserved.
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 2 (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 86 µAdc)
VGS(th) 1.2 1.9 2.7 Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.7 3.5 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) 0.1 0.18 0.3 Vdc
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg., f = 2690 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain Gps 15.0 16.3 18.0 dB
Drain Efficiency ηD30.0 32.9 — %
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF PAR 5.8 6.2 — dB
Adjacent Channel Power Ratio ACPR — -37.1 -34.5 dBc
Input Return Loss IRL — -16 -10 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency Gps
(dB) hD
(%) Output PAR
(dB) ACPR
(dBc) IRL
(dB)
2620 MHz 16.3 33.2 6.3 -37.2 -16
2655 MHz 16.3 33.0 6.3 -37.7 -17
2690 MHz 16.3 32.9 6.2 -37.1 -16
1. Part internally matched both on input and output.
(continued)
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MRF8S26060HR3 MRF8S26060HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 2620-2690 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB — 60 — W
IMD Symmetry @ 52 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
— 16 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres — 80 — MHz
Gain Flatness in 70 MHz Bandwidth @ Pout = 15.5 W Avg. GF— 0.2 — dB
Gain Variation over Temperature
(-30 °C to +85°C)
∆G — 0.014 — dB/°C
Output Power Variation over Temperature
(-30 °C to +85°C)
∆P1dB — 0.006 — dBm/°C
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
Figure 1. MRF8S26060HR3(HSR3) Test Circuit Component Layout
+
CUT OUT AREA
MRF8S26060
C8
Rev. 4
C15
B1
C2
C17
R1
C1
C6 C7
C3
C9 C11 C12 C16
C5
C4
C10 C13 C14
Table 5. MRF8S26060HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 RF Ferrite Bead MPZ2012S300AT000 TDK
C1, C2, C3, C4, C5 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC
C6, C7 0.3 pF Chip Capacitors ATC100B0R3BT500XT ATC
C8, C9, C10 10 µF, 50 V Chip Capacitors C5750X7R1H106KT TDK
C11, C13 22 µF, 50 V Chip Capacitors C5750JF1H226ZT TDK
C12, C14 22 µF, 35 V Tantalum Capacitors T491X226K035AT Kemet
C15 680 nF, 100 V Chip Capacitor C3225X7R2A684KT TDK
C16 220 µF, 63 V Electrolytic Capacitor MCGPR63V227M10X21 Multicomp
C17 1 nF, 250 V Chip Capacitor C2012X7R2102KT TDK
R1 12 Ω, 1/4 W Chip Resistor CRCW120612R0FKEA Vishay
PCB 0.030″, εr = 2.55 CuClad 25064-0300-55-22 Arlon
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5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2570
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 15.5 Watts Avg.
0
-10
-20
15.8
17.4
17.2
17
-40
35
34
33
31
-35
-36
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
16.8
16.6
16.4
16.2
16
2590 2610 2630 2650 2670 2690 2710 2730
32
-37
-25
PARC
PARC (dB)
0
-0.5
-1
-1.5
-2.5
ACPR (dBc)
Figure 3. Intermodulation Distortion Products
versus Two-Tone Spacing
TWO-T ONE SPACING (MHz)
10
-2 0
-3 0
-5 0
1 100
IMD, INTERMODULATION DISTORTION (dBc)
-4 0
IM3-U
IM3-L
IM5-U
IM5-L
IM7-U
VDD = 28 Vdc, Pout = 52 W (PEP), IDQ = 450 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2655 MHz
Figure 4. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
0
Pout, OUTPUT POWER (WATTS)
-2
-4
-6
20
-1
-3
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
10 30 40 60
24
60
48
42
36
ηD, DRAIN EFFICIENCY (%)
ηD
ACPR
PARC
ACPR (dBc)
-50
-20
-30
-25
-35
17
Gps, POWER GAIN (dB)
15
16
14
13
11
Gps
-2 dB = 20 W
-3 dB = 27 W
-60
-1 0
IM7-L
15.6
15.4
-38
-39
-15
-2
12 -5
50
-40
54
-1 dB = 15 W
-5
-4530
VDD = 28 Vdc, Pout = 15.5 W (Avg.), IDQ = 450 mA
Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
V DD = 28 Vdc
IDQ = 450 mA
f = 2655 MHz, Single-Carrier
W-CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
TYPICAL CHARACTERISTICS
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single-Carrier W-CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-10
8
20 60
40
30
20
10
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
18
100
-60
ACPR (dBc)
16
0
-20
-30
Figure 6. Broadband Frequency Response
0
18
2200
f, FREQUENCY (MHz)
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 450 mA
9
GAIN (dB)
15 Gain
2300 2700 3000
IRL
-18
0
-9
-12
-15
IRL (dB)
14
12
50
-50
-40
3
12 -6
-3
10
1
2690 MHz
6
10
2400 2500 2600 2800 2900
0
ηD
Gps
2655 MHz
2620 MHz
2690 MHz
2655 MHz
2620 MHz
VDD = 28 Vdc, IDQ = 450 mA, Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
W-CDMA TEST SIGNAL
0.0001
100
0
PEAK-T O-AVERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude
Clipping, Single-Carrier Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
W-CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
10
-60
-100
10
(dB)
-20
-30
-40
-50
-70
-80
-90
3.84 MHz
Channel BW
7.2
1.8 5.4
3.6
0
-1.8
-3.6
-5.4
-9 9
f, FREQUENCY (MHz)
Figure 8. Single-Carrier W-CDMA Spectrum
-7.2
-ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
-10
0
13579
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MRF8S26060HR3 MRF8S26060HSR3
7
RF Device Data
Freescale Semiconductor
VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg.
f
MHz Zsource
W
Zload
W
2570 8.55 - j8.59 6.29 - j8.92
2590 8.68 - j8.39 6.27 - j8.73
2610 8.84 - j8.21 6.27 - j8.54
2630 8.99 - j8.07 6.26 - j8.37
2650 9.14 - j7.84 6.26 - j8.20
2670 9.37 - j7.70 6.24 - j8.06
2690 9.58 - j7.61 6.21 - j7.91
2710 9.80 - j7.53 6.17 - j7.78
2730 10.02 - j7.48 6.13 - j7.65
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
32
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 450 mA, Pulsed CW, 10 µsec(on), 10% Duty Cycle
49.5
46.5
43.5
33 3534 36
Actual
Ideal
51
48
42
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
45
52.5
55.5
57
58.5
31302926 372827
54
2620 MHz
2690 MHz
2655 MHz
2655 MHz
2690 MHz
2620 MHz
f
(MHz)
P1dB P3dB
Watts dBm Watts dBm
2620 73 48.7 89 49.5
2655 73 48.6 88 49.4
2690 73 48.6 89 49.5
Test Impedances per Compression Level
f
(MHz) Zsource
Ω
Zload
Ω
2620 P1dB 8.45 - j15.80 3.40 - j7.26
2655 P1dB 12.77 - j16.85 3.68 - j7.16
2690 P1dB 12.64 - j14.91 3.27 - j7.45
Figure 10. Pulsed CW Output Power
versus Input Power @ 28 V
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
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11
RF Device Data
Freescale Semiconductor
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RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
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MRF8S26060HR3 MRF8S26060HSR3
13
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process.
Application Notes
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Apr. 2010 •Initial Release of Data Sheet
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14
RF Device Data
Freescale Semiconductor
MRF8S26060HR3 MRF8S26060HSR3
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Document Number: MRF8S26060H
Rev. 0, 4/2010
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