1
MRF140MOTOROLA RF DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed primarily for linear large–signal output stages up to 150 MHz
frequency range.
•Specified 28 Volts, 30 MHz Characteristics
Output Power = 150 Watts
Power Gain = 15 dB (Typ)
Efficiency = 40% (Typ)
•Superior High Order IMD
•IMD(d3) (150 W PEP) — –30 dB (Typ)
•IMD(d11) (150 W PEP) — –60 dB (Typ)
•100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDSS 65 Vdc
Drain–Gate Voltage VDGO 65 Vdc
Gate–Source Voltage VGS ±40 Vdc
Drain Current — Continuous ID16 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD300
1.7 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
Operating Junction Temperature TJ200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 0.6 °C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF140/D
SEMICONDUCTOR TECHNICAL DATA
150 W, to 150 MHz
N–CHANNEL MOS
LINEAR RF POWER
FET
CASE 211–11, STYLE 2
Motorola, Inc. 1997
D
G
S
REV 8
MRF140
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA) V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS — — 5.0 mAdc
Gate–Body Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS — — 1.0 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc
Drain–Source On–V oltage (VGS = 10 V, ID = 10 Adc) VDS(on) 0.1 0.9 1.5 Vdc
Forward T ransconductance (VDS = 10 V, ID = 5.0 A) gfs 4.0 7.0 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss —450 — pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss —400 — pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss —75 — pF
FUNCTIONAL TESTS (SSB)
Common Source Amplifier Power Gain (30 MHz)
(VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) (150 MHz) Gps —
—15
6.0 —
—dB
Drain Efficiency
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 6.5 A)
η— 40 — %
Intermodulation Distortion (1)
(VDD = 28 V, Pout = 150 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 250 mA) IMD(d3)
IMD(d11) —
—–30
–60 —
—
dB
Load Mismatch
(VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
ψNo Degradation in Output Power
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
C7
Figure 1. 30 MHz Test Circuit (Class AB)
C2, C5, C6, C7, C8, C9 — 0.1 µF Ceramic Chip or
Monolythic with Short Leads
C3 — Arco 469
C4 — 820 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10 µF/100 V Electrolytic
C11 — 1 µF, 50 V, Tantalum
C12 — 330 pF, Dipped Mica (Short leads)
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0 µH
L2 — Ferrite Bead(s), 2.0 µH
R1, R2 — 51 Ω/1.0 W Carbon
R3 — 1.0 Ω/1.0 W Carbon or Parallel Two 2 Ω, 1/2 W Resistors
R4 — 1 kΩ/1/2 W Carbon
T1 — 16:1 Broadband T ransformer
T2 — 1:25 Broadband T ransformer
BIAS
0–12 V
+
–C5
R1 C4 T2
C3
R2
R3
RF INPUT
L1 C8
T1
C6 C9
DUT
C10 28 V
+
–
RF
OUTPUT
L2 +
–
C2
C11 R4
C12
3
MRF140MOTOROLA RF DEVICE DATA
200
Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power
Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain
Frequency versus Drain Current
Figure 6. Gate Voltage versus Drain Current
25
20
15
10
5
025 010 20 50 100 200
160
80
40
0
120
200
160
80
40
0
120
123456
0102030
–25
–35
–40
–45
–30
0 20 40 60 80 120 160100 140
Pout, OUTPUT POWER (W ATTS PEP)
f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS)
VDD = 28 V, IDQ = 250 mA,
TONE SEPARATION = 1 kHz
VDD = 28 V, IDQ = 250 mA
–35
–40
–45
–30
1000
800
600
400
200
00 5 10 15 20
ID, DRAIN CURRENT (AMPS)
10
8
6
4
2
002 6810
V
GS, GATE–SOURCE VOLTAGE (VOLTS)
4
P
out, OUTPUT POWER (WATTS)
POWER GAIN (dB)IMD, INTERMODULA TION DISTOR TION (dB)
fT, UNITY GAIN FREQUENCY (MHz)
IDS, DRAIN CURRENT (AMPS)
VDS = 10 V
gfs = 6 mhos
VDD = 28 V
IDQ = 250mA
Pout = 150 W (PEP)
30 MHz 150 MHz
30 MHz 150 MHz
VDS = 20 V
10 V
–50
d3
d5
d3
d5
MRF140
4MOTOROLA RF DEVICE DATA
Figure 7. Series Equivalent Impedance
Figure 8. 150 MHz Test Circuit (Class AB)
C1, C2, C8 — Arco 463 or equivalent
C3 — 25 pF, Unelco
C4 — 0.1 µF, Ceramic
C5 — 1.0 µF, 15 WV Tantalum
C6 — 15 pF, Unelco J101
C7 — 25 pF, Unelco J101
C9 — Arco 262 or equivalent
C10 — 0.05 µF, Ceramic
C11 — 15 µF, 35 WV Electrolytic
L1 — 3/4″, #18 A WG into Hairpin
L2 — Printed Line, 0.200″ x 0.500″
L3 — 7/8″, #16 A WG into Hairpin
L4 — 2 T urns, #16 AWG, 5/16 ID
RFC1 — 5.6 µH, Molded Choke
RFC2 — VK200–4B
R1, R2 — 150 Ω, 1.0 W Carbon
C7
+
R1
C4
R2
RF INPUT L1
C8
D1
C9
DUT
+ 28 V
RF
OUTPUT
L3
BIAS
0–12 V C5
+
–C11
C10
RFC1
RFC1
L2
C2 C3
L4
C1
C6
150
50
30
7.0
7.0
f = 2.0 MHz
150
30
f = 2.0 MHz
ZOL*
Zin
VDD = 28 V
IDQ = 250 mA
Pout = 150 W PEP
Zo = 10 Ohms
NOTE: Gate Shunted by 25 Ohms.
ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device output operates at a
ZOL* = given output power, voltage and frequency.
5
MRF140MOTOROLA RF DEVICE DATA
RF POWER MOSFET CONSIDERATIONS
MOSFET CAPACITANCES
The physical structure of a MOSFET results in capacitors
between the terminals. The metal oxide gate structure
determines the capacitors from gate–to–drain (Cgd), and
gate–to–source (Cgs). The PN junction formed during the
fabrication of the RF MOSFET results in a junction capaci-
tance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances on data
sheets. The relationships between the inter–terminal capaci-
tances and those given on data sheets are shown below . The
Ciss can be specified in two ways:
1. Drain shorted to source and positive voltage at the gate.
2. Positive voltage of the drain in respect to source and zero
volts at the gate. In the latter case the numbers are lower.
However, neither method represents the actual operat-
ing conditions in RF applications.
Cgd
GATE
SOURCE
Cgs
DRAIN
Cds Ciss = Cgd + Cgs
Coss = Cgd + Cds
Crss = Cgd
LINEARITY AND GAIN CHARACTERISTICS
In addition to the typical IMD and power gain data
presented, Figure 5 may give the designer additional informa-
tion on the capabilities of this device. The graph represents the
small signal unity current gain frequency at a given drain
current level. This is equivalent to fT for bipolar transistors.
Since this test is performed at a fast sweep speed, heating of
the device does not occur. Thus, in normal use, the higher
temperatures may degrade these characteristics to some
extent.
DRAIN CHARACTERISTICS
One figure of merit for a FET is its static resistance in the
full–on condition. This on–resistance, VDS(on), occurs in the
linear region of the output characteristic and is specified under
specific test conditions for gate–source voltage and drain
current. For MOSFETs, VDS(on) has a positive temperature
coefficient and constitutes an important design consideration
at high temperatures, because it contributes to the power
dissipation within the device.
GATE CHARACTERISTICS
The gate of the RF MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide. The
input resistance is very high — on the order of 109 ohms —
resulting in a leakage current of a few nanoamperes.
Gate control is achieved by applying a positive voltage
slightly in excess of the gate–to–source threshold voltage,
VGS(th).
Gate Voltage Rating — Never exceed the gate voltage
rating. Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
Gate Termination — The gates of these devices are
essentially capacitors. Circuits that leave the gate open–cir-
cuited or floating should be avoided. These conditions can
result in turn–on of the devices due to voltage build–up on the
input capacitor due to leakage currents or pickup.
Gate Protection — These devices do not have an internal
monolithic zener diode from gate–to–source. If gate protection
is required, an external zener diode is recommended.
EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY
Collector Drain. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Source. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Gate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V(BR)CES V(BR)DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCBO VDGO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICID
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ICES IDSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IEBO IGSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VBE(on) VGS(th)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCE(sat) VDS(on)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cib Ciss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Cob Coss
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
hfe gfs
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RCE(sat) = VCE(sat)
ICrDS(on) = VDS(on)
ID
MRF140
6MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 211–11
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
UM
M
Q
RB
1
4
32
D
K
E
SEATING
PLANE
C
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.960 0.990 24.39 25.14
B0.465 0.510 11.82 12.95
C0.229 0.275 5.82 6.98
D0.216 0.235 5.49 5.96
E0.084 0.110 2.14 2.79
H0.144 0.178 3.66 4.52
J0.003 0.007 0.08 0.17
K0.435 ––– 11.05 –––
M45 NOM 45 NOM
Q0.115 0.130 2.93 3.30
R0.246 0.255 6.25 6.47
U0.720 0.730 18.29 18.54
__
STYLE 2:
PIN 1. SOURCE
2. GATE
3. SOURCE
4. DRAIN
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MRF140/D
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