CYStech Electronics Corp.
Spec. No. : C606I3
Issued Date : 2003.11.25
Revised Date : 2004.06.17
Page No. : 1/4
BTN3501I3 CYStek Product Specification
Low Vcesat NPN Epitaxial Planar Transistor
BTN3501I3
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 6 V
Collector Current (DC) IC 8
Collector Current (Pulse) ICP 16 (Note 1) A
Base Current IB 1 A
Power Dissipation @ TA=25℃ PD 1.5
Power Dissipation @ TC=25℃ PD 20 W
Thermal Resistance, Junction to Ambient RθJA 83.3 °C/W
Thermal Resistance, Junction to Case RθJC 6.25 °C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTN3501I3
B：Base
C：Collector
E：Emitter
TO-251
B C
B C E
CYStech Electronics Corp.
Spec. No. : C606I3
Issued Date : 2003.11.25
Revised Date : 2004.06.17
Page No. : 2/4
BTN3501I3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCEO(SUS) 80 - - V IC=30mA, IB=0
ICES - - 10 µA VCE=80V, VBE=0
IEBO - - 50 µA VEB=5V,IC=0
*VCE(sat) 1 - 0.1 0.3 V IC=2A, IB=200mA
*VCE(sat) 2 - - 0.6 V IC=8A, IB=400mA
*VCE(sat) 3 - - 1.5 V IC=5A, IB=50m A
*VBE(sat) 1 - - 1.2 V IC=2A, IB=200mA
*VBE(sat) 2 - - 1.5 V IC=8A, IB=800mA
*hFE 1 200 - - - VCE=1V, IC=100mA
*hFE 2 200 - 400 - VCE=1V, IC=2A
*hFE 3 100 - - - VCE=1V, IC=4A
fT - 50 - MHz VCE=6V, IC=500mA, f=20MHz
Cob - 130 - pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification of VCE(sat) 3
Rank KA KB N
Range < 360mV 350mV~900mV 800mV~1500mV
CYStech Electronics Corp.
Spec. No. : C606I3
Issued Date : 2003.11.25
Revised Date : 2004.06.17
Page No. : 3/4
BTN3501I3 CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1 10 100 1000 10000
Collector Current---IC(mA)
Current Gain---HFE
VCE = 1V
VCE = 2V
VCE = 5V
Saturation Voltage vs Collector Current
1
10
100
1000
1 10 100 1000 10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)
IC
=
10IB
IC
=
20IB
IC = 40IB
Saturation Voltage vs Collector Current
100
1000
10000
1 10 100 1000 10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT) @ IC =10IB
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 50 100 150 200
Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
Power Derating Curve
0
5
10
15
20
25
0 50 100 150 200
Case Temperature---TC(℃)
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C606I3
Issued Date : 2003.11.25
Revised Date : 2004.06.17
Page No. : 4/4
BTN3501I3 CYStek Product Specification
TO-251 Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.0177 0.0217 0.45 0.55 G 0.2559 - 6.50 -
B 0.0354 0.0591 0.90 1.50 H - *0.1811 - *4.60
C 0.0177 0.0236 0.45 0.60 I - 0.0354 - 0.90
D 0.0866 0.0945 2.20 2.40 J - 0.0315 - 0.80
E 0.2520 0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2677 0.2835 6.80 7.20
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
E
F G
H
J
I
3
2
1
K
C
D
B
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-251 Plastic Package
CYStek Packa
g
e Code: I3
Marking:
N3501
