2SK3556-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 250 220 37 148 30 37 251.9 20 5 2.02 270 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) C C < *1 L=309H, Vcc=48V, See to Avalanche Energy Graph *2 Tch=150C < < < < *4 VDS =250V *5 VGS=-30V *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *6 t=60sec f=60Hz Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Symbol V(BR)DSS VGS(th) Zero gate voltage drain current IDSS Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=250V VDS=200V VGS=30V ID=12.5A VGS=0V VGS=0V VDS=0V ID=12.5A VDS =75V VGS=0V f=1MHz VDS=25V Typ. 250 3.0 Tch=25C Tch=125C 10 75 16 2000 220 15 20 30 60 20 44 14 16 VGS=10V 8 VCC=72V ID=12.5A VGS=10V RGS=10 V CC =72V ID=12A VGS=10V L=309H Tch=25C IF=25A VGS=0V Tch=25C IF=25A VGS=0V -di/dt=100A/s Tch=25C Max. 5.0 25 250 100 100 3000 330 30 30 45 90 30 66 21 24 37 1.10 0.45 1.5 1.65 Units V V A nA m S pF ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 0.463 62.0 Units C/W C/W 1 2SK3556-01L,S,SJ FUJI POWER MOSFET Characteristics 300 Allowable Power Dissipation PD=f(Tc) Typical Output Characteristics 100 ID=f(VDS):80s Pulse test,Tch=25C 20V 250 80 10V 8V 7.5V 60 ID [A] PD [W] 200 150 7.0V 40 6.5V 100 20 50 6.0V VGS=5.5V 0 0 0 25 50 75 100 125 150 0 2 4 6 Tc [C] 8 10 12 VDS [V] Typical Transconductance Typical Transfer Characteristic gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 gfs [S] ID[A] 10 10 1 1 0.1 0 1 2 3 4 5 6 7 8 9 0.1 0.1 10 1 10 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.25 270 VGS= 5.5V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=12.5A,VGS=10V 240 6.0V 6.5V 7.0V 210 7.5V RDS(on) [ m ] RDS(on) [ ] 0.20 100 ID [A] 8V 0.15 10V 20V 0.10 180 150 max. 120 90 typ. 60 0.05 30 0.00 0 0 20 40 60 80 100 ID [A] -50 -25 0 25 50 75 100 125 150 Tch [C] http://store.iiic.cc/ 2 2SK3556-01L,S,SJ 7.0 FUJI POWER MOSFET Typical Gate Charge Characteristics Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA VGS=f(Qg):ID=25A, Tch=25C 6.5 14 6.0 12 max. 5.0 Vcc= 36V 10 4.5 72V 96V 4.0 VGS [V] VGS(th) [V] 5.5 3.5 3.0 min. 8 6 2.5 2.0 4 1.5 1.0 2 0.5 0.0 -50 -25 0 25 50 75 100 125 0 150 0 10 20 30 1 10 40 50 60 Qg [nC] Tch [C] Typical Forward Characteristics of Reverse Diode Typical Capacitance C=f(VDS):VGS=0V,f=1MHz IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 0 10 IF [A] C [nF] 10 Coss -1 1 10 Crss -2 10 -1 0 10 1 10 10 0.1 0.00 2 10 0.25 0.50 0.75 VDS [V] Typical Switching Characteristics vs. ID 3 1.00 1.25 1.50 1.75 2.00 VSD [V] t=f(ID):Vcc=72V, VGS=10V, RG=10 10 700 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=48V IAS=15A 600 tf 500 2 10 IAS=22A EAS [mJ] t [ns] td(off) tr td(on) 400 300 IAS=37A 1 10 200 100 0 10 0 -1 10 0 1 10 10 2 10 0 25 50 75 100 125 150 starting Tch [C] ID [A] http://store.iiic.cc/ 3 2SK3556-01L,S,SJ 10 2 10 1 10 0 FUJI POWER MOSFET Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 -1 -2 10 -8 10 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 Zth(ch-c) [C/W] tAV [sec] 10 1 10 0 10 -1 10 -2 10 -3 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 2 3 1 4 2 3 1 2 3 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ http://store.iiic.cc/ 4