GP2S28
1
Sheet No.: D3-A04201EN
Date Oct. 3. 2005
© SHARP Corporation
Notice The content of data sheet is subject to change without prior notice.
In the absence of confi rmation by device specifi cation sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specifi cation sheets before using any SHARP device.
GP2S28 Optimal Detecting Distance: 6mm
Phototransistor Output,
Case package Refl ective
Photointerrupter
■Description
GP2S28 is a standard, phototransistor output, refl ec-
tive photointerrupter with emitter and detector facing the
same direction in a case that provides non-contact sens-
ing, resulting in a through-hole design.
The case includes snap-mount positioning hooks and
a position pin to prevent mis-alignment.
■Features
1. Refl ective with phototransistor Output
2. Highlights :
• Snap-mount positioning hooks
• Position pin to prevent mis-alignment.
3. Key Parameters :
• Optimal Sensing Distance : 3 to 14mm
• Package : 12.8×9.3×5.4mm
4. Lead free and RoHS directive compliant
■Agency approvals/Compliance
1. Compliant with RoHS directive
■Applications
1. General purpose detection of object presence or mo-
tion.
2. Example : Printer, FAX, Optical storage unit.
2
Sheet No.: D3-A04201EN
GP2S28
■Internal Connection Diagram
■Outline Dimensions (Unit : mm)
Product mass : approx. 0.6g
1
1 4
2 3
2
Cathode
Anode
3
4
Collector
Emitter
Top view
(4)
N
APA
J
82
S
2
(2)
5
Surface of sensor
(2
.0C )
2
(4)(5)
1
.0
6
.1
5.4
(0.6)
(0.6)
5
(4
5.
2)2+0
−0.1
3+0
−0.1
12.8+0.2
−0.3
13+0
−0.3 3+0
−0.1
2−0.5+0.2
−0
4−0.45+0.15
−0.1
0.7±0.1
3.8±0.5
9.3±0.2
1.2±0.1
1.7+0.1
−0
0.6±0.1
2.1±0.1
4−0.45+0.15
−0.1
φ1+0
−0.1
23
4
1
Date code
Top view
Sharp mark “S”
Model
code
• Unspecifi ed tolerance : ±0.2mm
• ( ) : Reference dimensions
• Thin burr is not included in tolerance.
Solder material : Sn−3Ag−0.5Cu dipping
3
Sheet No.: D3-A04201EN
GP2S28
repeats in a 10 year cycle
Date code (2 digit)
1st digit 2nd digit
Year of production Month of production
A.D. Mark Month Mark
2000 0 1 1
2001 1 2 2
2002 2 3 3
2003 3 4 4
2004 4 5 5
2005 5 6 6
2006 6 7 7
2007 7 8 8
2008 8 9 9
2009 9 10 X
2010 0 11 Y
: : 12 Z
Country of origin
Japan
4
Sheet No.: D3-A04201EN
GP2S28
■Absolute Maximum Ratings
■Electro-optical Characteristics
(Ta=25˚C)
Parameter Symbol Rating Unit
Input
∗1 Forward current IF60 mA
∗1, 2Peak forward current IFM 1A
Reverse voltage VR6V
Power dissipation P 150 mW
Output
Collector-emitter voltage
VCEO 35 V
Emitter-collector voltage
VECO 6V
Collector current
IC20 mA
∗1 Collector power dissipation PC50 mW
Operating temperature Topr −25 to +85 ˚C
Storage temperature Tstg −40 to +85 ˚C
∗3Soldering temperature Tsol 260 ˚C
∗1
Refer to Fig.2, 3, 4
∗2 Pulse width ≤ 100μs, Duty ratio=0.01
∗3 For 5s or less
(Ta=25˚C)
Parameter Symbol Condition MIN. TYP. MAX. Unit
Input
Forward voltage VFIF=20mA −1.3 1.5 V
Peak forward voltage VFM IFM=0.5A 2.2 3.5 V
Reverse current IRVR=3V −−
10 μA
Output Collector dark current ICEO VCE=20V −1 100 nA
Transfer
charac-
teristics
∗4 Collector current ICVCE=5V, IF=20mA 0.04 −0.9 mA
Collector-emitter saturation voltage
VCE(sat) IF=40mA, IC=0.04mA −−
0.4 V
Response time Rise time trVCE=2V, IC=0.1mA, RL=100Ω−−
20 μs
Fall time tf−−
30
∗4 The conditions and arrangement of the refl ective object are shown below.
●Measuring Confi gulation of Collector Current
d=7mm
Reflector plate Kodak 90%
reflective paper
5
Sheet No.: D3-A04201EN
GP2S28
Fig.4 Peak Forward Current vs. Duty Ratio Fig.5 Forward Current vs. Forward Voltage
Fig.2 Forward Current vs.
Ambient Temperature
Fig.3 Collector Power Dissipation vs.
Ambient Temperature
Fig.1 Test Circuit for Response Time
Forward current IF (mA)
Ambient temperature Ta (˚C)
−25 0 25 50 75 85 100
0
10
20
30
40
50
70
60
12
Collector power dissipation PC (mW)
Ambient temperature Ta (˚C)
0
60
50
40
30
20
10
−25 0 25 50 75 85 100
Peak forward current IFM (mA)
Duty ratio
100
10
10−310−210−1
1 000
1
Pulse width≤100μs
Ta=25˚C
Forward current IF (mA)
Foward voltage VF (V)
100
10
1
3.532.521.510.50
Ta=75˚C
25˚C
0˚C
50˚C
−20˚C
VCC
Input
Output 10%
90%
trtf
RL
Anode
Reflector plate
Collector
1
4
6
Sheet No.: D3-A04201EN
GP2S28
Fig.6 Collector Current vs. Forward Current Fig.7 Collector Current vs.
Collector-emitter Voltage
Fig.8 Collector Current vs.
Ambient Temperature
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Relative colletor current vs.
Distance
Collector current IC (mA)
Forward current IF (mA)
0
0
VCE=5V
Ta=25˚C
0.8
0.4
0.6
12 24 36 486 1830425460
1
0.2
Collector current IC (mA)
Collector-emitter voltage VCE (V)
8106
0.8
0.6
0.4
0042
IF=60mA
40mA
50mA
30mA
20mA
10mA
Ta=25˚C
1
0.2
Collector current IC (mA)
0.25
0.2
0.1
0.15
0.05
0
−25 1007550250
Ambient temperature Ta (C)
VCE=5V
IF=20mA
Collector dark current ICEO (A)
10−10
10−9
10−8
10−7
10−6
−25 0 25 50 75 100
Ambient temperature Ta (C)
VCE=20V
d
Kodak
90% reflective paper
IF=20mA
VCE=5V
Ta=25˚C
Relative output current (%)
1556789101112131443210
100
80
60
40
20
Distance d (mm)
Remarks : Please be aware that all data in the
graph are just for reference and not
for guarantee.
(Test arrangement)
7
Sheet No.: D3-A04201EN
GP2S28
■Design Considerations
●Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Distance characteristics
The distance beteen the photointerrupter and the object to be detected shall be determined by referencing
Fig.10 "Relative collector current vs. distance".
This product is not designed against irradiation and incorporates non-coherent IRED.
●Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
●Parts
This product is assembled using the below parts.
• Photodetector (qty. : 1)
Category Material Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm) Response time (μs)
Phototransistor Silicon (Si) 800 700 to 1 200 3.5
• Photo emitter (qty. : 1)
Category Material Maximum light emitting
wavelength (nm) I/O Frequency (MHz)
Infrared emitting diode
(non-coherent) Gallium arsenide (GaAs) 950 0.3
• Material
Case Lead frame plating
Black Polycarbonate resin
(UL94 HB) Solder dip. (Sn−3Ag−0.5Cu)
8
Sheet No.: D3-A04201EN
GP2S28
■Manufacturing Guidelines
●Soldering Method
Soldering:
To solder onto lead pins, soldering at 260˚C for 5 s or less.
Please take care not to let any external force on lead pins when soldering on just after soldering.
Please don't do soldering with preheating, and please don't do soldering by refl ow.
Other notice
Please test the soldering method in actual condition and make sure the soldering works fine, since the
impact on the junction between the device and PCB varies depending on the cooling and soldering
conditions.
Flux
Some fl ux, which is used in soldering, may crack the package due to synergistic effect of alcohol in fl ux and
the rise in temperature by heat in soldering. Therefore, in using fl ux, please make sure that it does not have
any infl uence on appearance and reliability of the photointerrupter.
●Cleaning instructions
Solvent cleaning :
Solvent temperature should be 45˚C or below. Immersion time should be 3 minutes or less.
Ultrasonic cleaning :
The affect to device by ultrasonic cleaning is different by cleaning bath size, ultrasonic power output,
cleaning time, PCB size or device mounting condition etc.
Please test it in actual using condition and confi rm that doesn't occur any defect before starting the ultrasonic
cleaning.
Recommended solvent materials :
Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.
●Presence of ODC
This product shall not contain the following materials.
And they are not used in the production process for this product.
Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform)
Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at all.
This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
•Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated
diphenyl ethers (PBDE).
9
Sheet No.: D3-A04201EN
GP2S28
■Package specifi cation
●Case package
Package materials
Anti-static plastic bag : Polyethtylene
Moltopren : Urethane
Partition : Corrugated fi berboard
Packing case : Corrugated fi berboard
Package method
100 pcs of products shall be packaged in a plastic bag. Ends shall be fi xed by stoppers. The bottom ot the
packing case is covered with moltopren, and the partition is set in the packing case. Each partition should
have 1 plastic bag.
The 10 plastic bags containing a product are put in the packing case.
Moltopren should be located after all product are settled (1 packing conteains 1 000 pcs).
Packing composition
Moltopren
Partition
Anti-static
plastic bag
Packing case
10
Sheet No.: D3-A04201EN
GP2S28
■Important Notices
· The circuit application examples in this publication
are provided to explain representative applications of
SHARP devices and are not intended to guarantee any
circuit design or license any intellectual property rights.
SHARP takes no responsibility for any problems related
to any intellectual property right of a third party resulting
from the use of SHARP's devices.
· Contact SHARP in order to obtain the latest device
specification sheets before using any SHARP device.
SHARP reserves the right to make changes in the
specifi cations, characteristics, data, materials, structure,
and other contents described herein at any time
without notice in order to improve design or reliability.
Manufacturing locations are also subject to change
without notice.
· Observe the following points when using any devices
in this publication. SHARP takes no responsibility for
damage caused by improper use of the devices which
does not meet the conditions and absolute maximum
ratings to be used specifi ed in the relevant specifi cation
sheet nor meet the following conditions:
(i) The devices in this publication are designed for use
in general electronic equipment designs such as:
--- Personal computers
--- Offi ce automation equipment
--- Telecommunication equipment [terminal]
--- Test and measurement equipment
--- Industrial control
--- Audio visual equipment
--- Consumer electronics
(ii) Measures such as fail-safe function and redundant
design should be taken to ensure reliability and safety
when SHARP devices are used for or in connection
with equipment that requires higher reliability such as:
--- Transportation control and safety equipment (i.e.,
aircraft, trains, automobiles, etc.)
--- Traffi c signals
--- Gas leakage sensor breakers
--- Alarm equipment
--- Various safety devices, etc.
(iii) SHARP devices shall not be used for or in
connection with equipment that requires an extremely
high level of reliability and safety such as:
--- Space applications
--- Telecommunication equipment [trunk lines]
--- Nuclear power control equipment
--- Medical and other life support equipment (e.g.,
scuba).
· If the SHARP devices listed in this publication fall
within the scope of strategic products described in the
Foreign Exchange and Foreign Trade Law of Japan, it
is necessary to obtain approval to export such SHARP
devices.
· This publication is the proprietary product of SHARP
and is copyrighted, with all rights reserved. Under
the copyright laws, no part of this publication may be
reproduced or transmitted in any form or by any means,
electronic or mechanical, for any purpose, in whole or in
part, without the express written permission of SHARP.
Express written permission is also required before any
use of this publication may be made by a third party.
· Contact and consult with a SHARP representative
if there are any questions about the contents of this
publication.
[H167]
