Features
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180 Watts peak pulse power (tp = 8/20μs)
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DFN2510 package
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Solid-state silicon-avalanche technology
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Low clamping voltage
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Low leakage current
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Ultra low capacitance (0.2pF typical I/O to I/O)
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ESD Protection for high-speed data lines to:
IEC 61000-4-2 ±25KV contact ±25KV air
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 7A (8/20μs)
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RoHS compliant
Applications
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USB 3.0, USB 2.0, MHL
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HDMI 2.0, Display Port 1.3, eSATA
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Unified Display Interface (UDI)
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Digital Visual Interface (DVI)
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High Speed Serial Interface
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter Symbol Value Unit
Peak Pulse Power (TP=8/20μS) PPP 180 W
Peak Pulse Current ( TP = 8/20μS ) IPP 7 A
Junction Temperature TJ -55 to +125 °C
Storage Temperature TSTG -55 to +150 °C
Electrical Characteristics (TA=25°C unless otherwise specified)
DFN2510
Schematic Diagram
2
GSCLAMP0524PE
Ultra Low Capacitance ESD TVS Array
1
Parameter Symbol Condition Min Typ Max Unit
Reverse Stand-off Voltage VRWM V 5
Reverse Breakdown Voltage VBR T=1mAAI6.8 8.5 V
Reverse Leakage Current IR R=5V V0.01 1 μA
IPP=1A,TP=8/20μS 8 9.5 V
IPP=5A,TP=8/20μS 12 20 V
Clamping Voltage VC
IPP=7A,TP=8/20μS 15 26 V
CJ R
V=0V,f=1MHz, I/O to I/O 0.2 pF
Junction Capacitance CJ R
V=0V,f=1MHz, I/O to GND 0.4 pF
Trigger Voltage (IEC 61000-4-2) ESD =V8kV V
Clamping Voltage (IEC 61000-4-2) ESD
V20 V
T
V
C
V
135
=8kV
6
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