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®
X02 Series
SENSITIVE 1.25A SCRs
September 2000 - Ed: 3
MAIN FEATUR ES:
DESCRIPTION
Thanks to highly sensitive triggering levels, the
X02 SCR series is suitable for all applications
where the available gate current is limited, such as
ground fault circuit interruptors, overvoltage
crowbar protection in low power supplies,
capacitive ignition circu its, ...
Available in though-hole or surface-mount
pac kages, these devices are optimized in forward
voltage drop and inrush current capabilities, for
reduc ed p ower l os ses and high reliability in hars h
environments.
Symbol Value Unit
IT(RMS) 1.25 A
VDRM/VRRM 600 and 800 V
IGT 50 to 200 µA
ABSOLUTE RATINGS (li m iting values)
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180° conduction angle) TO-92 TI = 55°C 1.25 A
SOT-223 Ttab = 95°C
IT(AV) Average on-state current
(180° conduction angle) TO-92 TI = 55°C 0.8 A
SOT-223 Ttab = 95°C
ITSM Non repetitive surge peak on-state
current tp = 8.3 ms Tj = 25°C 25 A
tp = 10 ms 22.5
I²tI
²
t Value for fusing tp = 10 ms Tj = 25°C 2.5 A2S
dI/dt Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A
PG(AV) Average gate power dissipation Tj = 125°C 0.2 W
Tstg
Tj Storage junction temperature range
Operatin g junction temp erature range - 40 to + 150
- 40 to + 125 °C
G
A
K
TO-92
(X02xxA) SOT-223
(X02xxN)
X02 Series
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ELECTRICAL CHARACTERISTICS (Tj = 25°C , unless otherwi se specified)
THERMA L RESISTANCES
S = Copper surfac e under tab
PRODUCT SELECTO R
Symbol Test Conditions X02xx Unit
02 05
IGT VD = 12 V RL = 140 ΩMIN. - 20 µA
MAX. 200 50
VGT MAX. 0.8 V
VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩTj = 125°C MIN. 0.1 V
VRG IRG = 10 µA MIN. 8V
I
H
I
T
= 50 mA RGK = 1 kΩMAX. 5 mA
ILIG = 1 mA RGK = 1 kΩMAX. 6mA
dV/dt VD = 67 % VDRM RGK = 1 kΩ Tj = 110 °C MIN. 10 15 V/µs
VTM ITM = 2.5 A tp = 380 µs Tj = 25°C MAX. 1.45 V
Vto Threshold voltage Tj = 125°C MAX. 0.9 V
RdDynamic resistance Tj = 125°C MAX. 200 mΩ
IDRM
IRRM VDRM = VRRM RGK = 1 kΩTj = 25°C MAX. 5 µA
Tj = 125°C 500
Symbol Parameter Value Unit
Rth(j-l) Junction to leads (DC) TO-92 60 °C/W
Rth(j-t) Junction to tab (DC) SOT-223 25
Rth(j-a) Junction to ambient (DC) TO-92 150
S = 5 cm²SOT-223 60
Part Number Voltage Sensitivity Package
600 V 800 V
X0202MA X 200 µA TO-92
X0202MN X 200 µA SOT-223
X0202NA X 200 µA TO-92
X0202NN X 200 µA SOT-223
X0205MA X 50 µA TO-92
X0205MN X 50 µA SOT-223
X0205NA X 50 µA TO-92
X0205NN X 50 µA SOT-223
X02 Series
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ORDERING INFO RMATION
OTHER INFORMATION
Note: x x = sensitivity, y = voltage
Part Number Marking Weight Base Quantity Packing mode
X02xxyA 1BA2 X02xxyA 0.2 g 2500 Bulk
X02xxyA 2BL2 X02xxyA 0.2 g 2000 A mmop ack
X0202yN 5BA4 X2y 0.12 g 1000 Tape & reel
X0205yN 5BA4 X5y 0.12 g 1000 Tape & reel
Fig. 1: Maximum average power dissipation
versu s average on-state current. Fig. 2-1: Average and D.C. on-state current
versus lead temperature (S OT-2 23/TO -92).
X 02 02 M A 1BA2
Blank
SENSITIVE
SCR
SERIES
CURRENT: 1.25A
SENSITIVITY:
02: 200µA
05: 50µA
VOLTAGE:
M: 600V
N: 800V PACKAGE:
A:TO-92
N: SOT-223
PACKING MODE:
1BA2:TO-92 Bulk
2BL2:TO-92 Ammopack
5BA4: SOT-223Tape & Reel
P(W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IT(av)(A)
SOT-223
SOT-223
TO-92
TO-92
IT(av)(A)
0.8
1.4
1.2
1.0
0.6
0.4
0.2
0.00255075 100 125
Tlead orTlab(°C)
X02 Series
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Fig. 2-2: Average and D.C. on-state current
versu s ambient temperature (device mount ed on
FR4 with recommended pad layout) (SOT-223/
TO-92).
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration
(SOT-223/TO-92).
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical value s).
Fig. 5: Relative variation of holding current
versus gate-cat hode resistance (typical val ues).
Fig. 6: Relative variation of dV/dt immunity
versu s gate-cathode res istance (typical values ). Fig. 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical v alues).
SOT-223
SOT-223
TO-92
TO-92
IT(av)(A)
02550
75 100 125
0.8
1.4
1.2
1.0
0.6
0.4
0.2
0.0 Tamb(°C)
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 K = [Zth(j-a)/Rth(j-a)]
tp(s)
SOT-223
TO-92
Ω
IGT, IH, IL[Tj]/IGT, IH, IL[Tj] = 25°C]
1.50
1.25
1.00
0.75
0.50
0.25
0.00
-40 -20 0 20 40 60 80 100 120 140
Tj(°C)
1E-2 1E-1 1E+0 1E+1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 IH[Rgk] / IH[Rgk = 1 kΩ]
Tj = 25°C
Rgk(kΩ)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0 Tj = 125°C
VD = 0.67xVDRM
dV/dt[Rgk]/dV/dt [Rgk=1kΩ]
Rgk(kΩ)
dV/dt[Cgk] / dV/dt[Rgk = 1k ]Ω
20
18
16
14
12
10
8
6
4
2
00246810
12 14 16 18 20 22
Cgk(nF)
X02 Series
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Fig. 8: Surge peak on-state current versus
num ber of cycle s. Fig. 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 m s, and corres ponding value of I²t.
Fig. 10: On-state characteristics (maximum
values). Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm)
(SOT-223).
1 10 100 1000
0
5
10
15
20
25 ITSM(A)
Nonrepetitive
Tjinitial=25°C
Repetitive
Tamb=25°C
Onecycle
tp=10ms
Number of cycles
ITSM(A), I t(A S)
22
1.00 10.000.100.01
300
100
10
1tp(ms)
ITM(A)
VTM(V)
3E+1
1E+1
1E+0
1E-1 2.0 2.5 3.0 3.5 4.0 4.51.51.00.5
Rth(j-a) (°C/W)
S(cm )
2
4.0 4.5 5.03.53.02.52.01.51.00.50.0
130
120
110
100
90
80
70
60
50
40
30
20
10
0
PACKAGE MECHANICAL DATA
TO-92 (Plastic)
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.50 0.019
X02 Series
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FOOTPRINT DIMENSIONS ( in millime t e rs )
SOT-223 (Plastic)
PACKAGE MECHANICAL DATA
SOT-223 (Plastic)
A
A1
B
e1
D
B1
HE
e
c
V
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.80 0.071
A1 0.02 0.1 0.0008 0.004
B 0.60 0.70 0.85 0.024 0.027 0.034
B1 2.90 3.00 3.15 0.114 0.118 0.124
c 0.24 0.26 0.35 0.009 0.010 0.014
D 6.30 6.50 6.70 0.248 0.256 0.264
e 2.3 0.090
e1 4.6 0.181
E 3.30 3.50 3.70 0.130 0.138 0.146
H 6.70 7.00 7.30 0.264 0.276 0.287
V10° max
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