PSEK60/06 - Powersem - Product.Network

Fast Recovery PSEK 60 IFAVM = 2x 30 A

Epitaxial Diode (FRED) VRRM = 600 V

trr = 35 ns

Features

•Isolation voltage 3000 V∼

•Planar glass passivated chips

•Low forward voltage drop

•Leads suitable for PC board

soldering

•Very short recovery time

•Extremely low switching losses

•UL registered, E 148688

Applications

•Antiparallel diode for high frequency

switching devices

•Anti saturation diode

•Snubber diode

•Free wheeling diode in converters

and motor control circuits

•Rectifiers in switch mode power

supplies (SMPS)

•Inductive heating and melting

•Uninterruptible power supplies (UPS)

•Ultrasonic cleaners and welders

Advantages

•Easy to mount with two screws

•Space and weight savings

•Improved temperature and power

cycling capability

•Low noise switching

•Small and light weight

POWERSEM GmbH, Walpersdorfer Str. 53

D - 91126 Schwabach

Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

ECO-PACTM 1

 2005 POWERSEM reserves the right to change limits, test conditions and dimensions

Data according to IEC 60747 refer to a single diode

unless otherwise stated

*IFAVM rating includes blocking losses at TVJM;

VR=0.8 VRRM; duty cycle d=0.5

Preliminary Data Sheet

VRSM VRRM Type

(V) (V)

600 600 PSEK 60/06

IFRMS TVJ = TVJM 50 A

IFAVM*TC = 85 °C, rectangular, d=0.5 30 A

IFRM tP<10µs; rep.rating, pulse widthlimited by TVJM 375 A

IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 300 A

VR = 0 t = 8.3 ms (60 Hz), sine 320 A

TVJ = 125 °C t = 10 ms (50 Hz), sine 260 A

VR = 0 t = 8.3 ms (60 Hz), sine 280 A

∫∫

∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 450 A²s

VR = 0 t = 8.3 ms (60 Hz), sine 420 A²s

TVJ = 125 °C t = 10 ms (50 Hz), sine 340 A²s

VR = 0 t = 8.3 ms (60 Hz), sine 320 A²s

TVJ -40... + 150 °C

TVJM 150 °C

Tstg -40... + 150 °C

VISOL 50/60 Hz, RMS t = 1 min 2500 V∼

IISOL ≤ 1 mA t = 1 s 3000 V∼

MdMounting torque (M4) 1.5 - 1.8 Nm

14 - 16 lb.in.

Weight typ. 16 g

Symbol Test Conditions Maximum Ratings

Symbol Test Conditions Characteristic Value

IRTVJ = 25°C, VR=VRRM max. 100 µA

TVJ = 25°C, VR=0.8.VRRM max. 50 µA

TVJ = 125°C, VR=0.8.VRRM max. 7 mA

VFIF = 30 A, TVJ = 25 °C max. 1.60 V

VTO For power-loss calculations only 1.01 V

rT 7 mΩ

RthJC per diode; max. 1.25 K/W

RthCH per diode; typ. 0.05 K/W

IRM IF=30A; -diF/dt=240A/µs; VR=350V typ. 10 A

L≤0.05 mH; TVJ= 100°C

trr IF=1A; -diF/dt=100A/µs; VR=30V; typ. 35 ns

TVJ= 25°C

dsCreeping distance on surface 11.2 mm

dACreeping distance in air 12.8 mm

aMax. allowable acceleration 50 m/s²

HI MN

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