VMMK-3413
25 - 45 GHz Directional Detector in SMT Package
Data Sheet
Description
The VMMK-3413 is a small and easy-to-use, broadband,
directional detector operating in various frequency bands
from 25 to 45 GHz with typical insertion loss of 0.8 dB. It is
housed in the Avago Technologies industry-leading and
revolutionary sub-miniature chip scale package (GaAsCap
wafer scale leadless package) which is small and ultra thin
yet can be handled and placed with standard 0402 pick
and place assembly equipment. The VMMK-3413 provides
a wide detecting power level from -5 to +30 dBm with
excellent input and output return losses. A typical of 10 dB
directivity is provided, and the detector requires only 1.5 V
DC biasing with small current drawn of 0.16 mA.
WLP0402, 1 mm x 0.5 mm x 0.25 mm
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 350 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Pin Connections (Top View)
Note:
“U” = Device Code
“Y = Month Code
Features
• 1 x 0.5 mm surface mount package
• Ultrathin (0.25 mm)
• Wide frequency range: 25 to 45 GHz
• Wide dynamic range
• Low Insertion loss
• Directivity: 10 dB typ.
• In and output match: 50 ohm
Specifications (35 GHz, Vb = 1.5 V, Zin = Zout = 50 )
• Bias Current: 0.16 mA typical
• Insertion Loss: 0.8 dB
• Detector output offset voltage: 63 mV typical
• Detector Output voltage at +20 dBm: 674 mV typical
Applications
• Point-to-Point Radio
• Monitoring Power Amplifier Output Power
• Power Control Loop Detector
UY
UY Output/
Vdet
Input/
Vbias
Input/
Vbias
Output/
Vdet
Detector
2
Electrical Specifications
Table 1. Absolute Maximum Rating (1)
Sym Parameters/Condition Unit Absolute Max
Vbias Bias Voltage (RF Input) V 2
Ibias Bias Current mA 1
Pin, max CW RF Input Power (RF Input) (2) dBm +31
Tch Max Channel Temperature °C +150
Notes
1. Operation of this device above any one of these parameters may cause permanent damage
2. With the DC (typical bias) and RF applied to the device at board temperature, Tb = 25° C
Table 2. DC and RF Specifications
TA = 25° C, Freq = 35 GHz, Vbias = 1.5 V, Zin = Zout = 50 unless otherwise specified
Symbol Parameters / Condition Unit Min Typical Max
Ibias (1) Bias Current mA 0.1 0.16 0.23
I.L. (1) Insertion Loss
at 25 GHz
at 35 GHz
at 45 GHz
dB
0.5
0.8
1.1
IRL (1) Input Return Loss dB 20
ORL (1) Output Return Loss dB 17
Dir (2) Directivity
at 25 GHz
at 35 GHz
at 45 GHz
dB
10
18
7
Voffset (1,3) Detector Output Offset Voltage mV 50 63 80
Vdet (4) Detector Output Voltage at +12 dBm mV 550 674 790
Notes
1. Measured data obtained from wafer-probing, losses from measurement system de-embedded from final data, Vbias = 1.5 V applied through a
broadband bias tee.
2. Measured by reversing the detector and applying RF power to the output port. Directivity is defined as the difference in dB between the power
applied in the forward direction and the power required in the reverse direction to produce the same Vdet voltage.
3. Voffset is measured with RF input power turned off.
4. Vdet is measured with +12 dBm RF input power at 35 GHz.
3
Product Consistency Distribution Charts at 35 GHz, Vbias = 1.5 V
Ibias: Mean = 0.16 mA, LSL = 0.1 mA, USL = 0.23 mA Voffset: Mean = 63 mV, LSL = 50 mV, USL = 80 mV
Vdet_On @ Pin = +12 dBm: Mean = 674 mV, LSL = 550 mV, USL = 790 mV
Notes:
Distribution data sample sized is based on at least 57 Kpcs taken from
MPV lots.
Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
70 8050 60
LSL USL
800600 700
LSL USL
0.11 0.13 0.15 0.17 0.190.09 0.21 0.23
LSL USL
4
VMMK-3413 Typical Performance
S-parameter data obtained using 300 mm G-S-G probe substrate; bias was brought in via broadband bias tees. Power vs.
Vdet data obtained using CPW PCB (Fig. 8). Losses calibrated out to the package reference plane.
(T
A = 25° C, Vbias = 1.5 V, Ibias = 0.16 mA, Zin = Zout = 50 unless otherwise specified)
Figure 1. Vdet vs. Input Power Figure 2. Insertion Loss vs. Frequency
Figure 3. Input Return Loss Figure 4. Output Return Loss
Figure 5. Pin vs. Vdet Over Temperature at 42 GHz Figure 6. Pin vs. Vdet Over Vbias at 42 GHz
0.01
0.1
1
10
-20 -10 0 10 20 30
Pin (dBm)
Output DC Voltage (V)
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
22 25 28 31 34 37 40 43 46
Frequency (GHz)
S21 (dB)
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
22 25 28 31 34 37 40 43 46
Frequency (GHz)
S11 (dB)
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
22 25 28 31 34 37 40 43 46
Frequency (GHz)
S22 (dB)
0.01
0.1
1
10
-10 -5 0 5 10 15 20 25
Pin (dBm)
Output DC Voltage (V)
0.01
0.1
1
10
-10 -5 0 5 10 15 20 25
Pin (dBm)
Output DC Voltage (V)
25 GHz
35 GHz
45 GHz
25° C
85° C
-40° C
1.5 V
1.2 V
1.8 V
5
Typical Scattering Parameters
Data obtained with 300 mm G-S-G probing on 0.016 inch thick PCB substrate, broadband bias tees, losses calibrated out
to the package reference plane. TA = 25° C, Zin = Zout = 50 .
Freq
GHz
S11 S21 S12 S22
dB Mag Phase dB Mag Phase dB Mag Phase dB Mag Phase
2 -17.538 0.133 -95.400 -0.164 0.981 -3.500 -0.159 0.982 -3.400 -17.446 0.134 -96.800
5 -22.189 0.078 -116.600 -0.179 0.980 -23.300 -0.178 0.980 -23.200 -22.095 0.079 -119.300
10 -25.036 0.056 -145.600 -0.199 0.977 -50.700 -0.199 0.977 -50.700 -24.777 0.058 -148.200
15 -41.546 0.008 165.551 -0.252 0.971 -77.700 -0.250 0.972 -77.600 -38.966 0.011 123.306
16 -44.980 0.006 47.366 -0.267 0.970 -83.000 -0.266 0.970 -83.000 -38.458 0.012 78.001
17 -35.934 0.016 3.849 -0.285 0.968 -88.500 -0.283 0.968 -88.500 -33.629 0.021 45.982
18 -31.053 0.028 -3.001 -0.305 0.966 -94.000 -0.303 0.966 -94.000 -29.835 0.032 24.096
19 -27.793 0.041 -8.657 -0.326 0.963 -99.500 -0.324 0.963 -99.400 -26.940 0.045 9.650
20 -25.439 0.053 -14.670 -0.349 0.961 -105.100 -0.346 0.961 -105.000 -24.710 0.058 0.401
21 -23.677 0.065 -20.981 -0.373 0.958 -110.500 -0.371 0.958 -110.500 -22.972 0.071 -5.472
22 -22.337 0.076 -27.540 -0.398 0.955 -116.100 -0.396 0.955 -116.100 -21.606 0.083 -9.387
23 -21.317 0.086 -34.302 -0.425 0.952 -121.700 -0.423 0.952 -121.700 -20.531 0.094 -12.389
24 -20.549 0.094 -41.226 -0.452 0.949 -127.200 -0.451 0.949 -127.200 -19.685 0.104 -15.190
25 -19.986 0.100 -48.275 -0.480 0.946 -132.900 -0.479 0.946 -132.800 -19.026 0.112 -18.206
26 -19.592 0.105 -55.421 -0.509 0.943 -138.400 -0.508 0.943 -138.400 -18.518 0.119 -21.605
27 -19.342 0.108 -62.638 -0.538 0.940 -144.100 -0.538 0.940 -144.000 -18.137 0.124 -25.353
28 -19.214 0.109 -69.907 -0.567 0.937 -149.700 -0.568 0.937 -149.700 -17.859 0.128 -29.276
29 -19.189 0.110 -77.214 -0.597 0.934 -155.400 -0.598 0.934 -155.300 -17.667 0.131 -33.116
30 -19.253 0.109 -84.549 -0.626 0.930 -161.000 -0.627 0.930 -161.000 -17.546 0.133 -36.599
31 -19.390 0.107 -91.909 -0.655 0.927 -166.700 -0.657 0.927 -166.800 -17.483 0.134 -39.508
32 -19.588 0.105 -99.295 -0.685 0.924 -172.600 -0.686 0.924 -172.500 -17.467 0.134 -41.755
33 -19.834 0.102 -106.714 -0.714 0.921 -178.200 -0.715 0.921 -178.100 -17.489 0.134 -43.465
34 -20.117 0.099 -114.179 -0.743 0.918 176.000 -0.744 0.918 176.200 -17.542 0.133 -45.063
35 -20.424 0.095 -121.706 -0.772 0.915 170.200 -0.773 0.915 170.300 -17.618 0.132 -47.363
36 -20.746 0.092 -129.318 -0.801 0.912 164.500 -0.802 0.912 164.500 -17.713 0.130 -51.668
37 -21.073 0.088 -137.044 -0.830 0.909 158.400 -0.831 0.909 158.600 -17.821 0.129 -55.697
38 -21.397 0.085 -144.916 -0.861 0.906 152.500 -0.861 0.906 153.000 -17.939 0.127 -59.437
39 -21.711 0.082 -152.972 -0.893 0.902 146.900 -0.892 0.902 147.100 -18.062 0.125 -63.632
40 -22.012 0.079 -161.257 -0.926 0.899 141.100 -0.924 0.899 141.200 -18.185 0.123 -68.310
41 -22.300 0.077 -169.819 -0.962 0.895 135.200 -0.960 0.895 135.100 -18.300 0.122 -73.437
42 -22.579 0.074 -178.712 -1.001 0.891 129.000 -0.999 0.891 129.000 -18.398 0.120 -78.884
43 -22.854 0.072 167.300 -1.044 0.887 123.200 -1.042 0.887 123.300 -18.464 0.119 -84.403
44 -23.136 0.070 157.400 -1.092 0.882 117.000 -1.091 0.882 117.100 -18.478 0.119 -89.590
45 -23.435 0.067 148.300 -1.146 0.876 110.900 -1.147 0.876 111.100 -18.413 0.120 -93.848
46 -23.768 0.065 129.500 -1.208 0.870 104.700 -1.212 0.870 104.800 -18.237 0.122 -96.350
6
VMMK-3413 Biasing Information
Biasing and Operation
The VMMK-3413 is a 3 terminal device consisting of a
“through 50 ohm line connecting directly between the RF
Input and RF Output ports and a directional coupler with a
full wave detector that provides a DC output proportional
to RF power input. As with any high frequency device,
good grounding is required on the common port under
the device for it to produce low loss in the “through mode.
A suggested PCB layout with appropriate grounding will
be cover later in the application section.
With only 3 terminals available, the DC bias and detected
voltage are internally DC coupled to the input and output
terminals respectively. The key to successful operation
of the VMMK-3413 is the use of low loss bias decoupling
networks connected to both the RF Input and the RF
Output ports. Figure 7 shows a simple biasing circuit.
The bias decoupling networks provide a low loss AC
coupled RF path to the device, a means of biasing the
device on the input, and a means of extracting the detected
voltage on the output of the device. The detector needs
2 DC blocking caps, C1 and C2, on the input and output
ports. This can be accomplished by printing coupled lines
on the PCB or using SMT capacitors (ATC 600 series) with
bias
detector
R1
C1
R2
C2
C4 R3
VdetVb
C3
RFin RFout
Component Description
C1, C2 0.1 pF (ATC 600 series or printed
coupled lines)
R1 (Vb -1.5) / 0.00016
R2 10 k
C3, C4 1 pF
R3 External load resistor (optional)
Figure 7. Biasing the VMMK-3413 Detector Module
values chosen for the frequency of operation. All SMT
components are recommended to be no larger than 0402
size. Nominal bias voltage of 1.5 V or 0.16 mA is required
for proper operation. Biasing on the input is by a way of a
large value resistor R1. Its value can be computed using
the following equation:
R1 = (Vb -1.5)/0.00016
where Vb is the supply voltage.
Detected DC voltage is extracted on the output by a way
of a large value resistor R2, in the range of 10 k. Bypassing
capacitors C3 and C4 are needed to prevent RF influence
on the DC lines. Suggested value for bypass capacitors is
1 pF.
At zero RF input power, and at 1.5 V supply bias, a nominal
63 mV offset voltage appears at the detected output port.
The internal output source resistance for the detector is
approximately 20 k. Resistor R3 can be used as an
external load resistor for the detector. Its value can be
optimized for the desired Vout vs. RF input curve.
Figure 8 shows a characterization PCB used to obtain the
Vdet vs. Input Power characterization data from 25 to 45
GHz. For ease in broadband characterization, two external
45 MHz – 50 GHz Bias Networks (HP 11612B) were used.
Figure 8. VMMK-3413 Characterization Board
7
S Parameter Measurements
The S-parameters are measured on a 0.016 inch thick
RO4003 printed circuit test board, using 300 mm G-S-G
(ground signal ground) probes. Coplanar waveguide is
used to provide a smooth transition form the probes to
the device under test. The presence of the ground plane
on top of the test board results in excellent grounding
at the device under test. A combination of SOLT (Short
Open Load – Thru) and TRL (Thru Reflect -–Line) cali-
bration techniques are used to correct for the effects of
the test board, resulting in accurate device S parameters
Package and Assembly Notes
For detailed description of the device package and
assembly notes, please refer to Application Note 5378.
Ordering Information
Part Number
Devices Per
Container Container
VMMK-3413-BLKG 100 Antistatic Bag
VMMK-3413-TR1G 5000 7” Reel
Package Dimension Outline
CARRIER TAPE
USER FEED
DIRECTION
REEL
8 mm
4 mm
TOP VIEW END VIEW
Reel Orientation Device Orientation
Dimensions
Symbol Min (mm) Max (mm)
E 0.500 0.585
D 1.004 1.085
A 0.225 0.275
Note:
All dimensions are in mm
A
E
D
TOP VIEW END VIEW
UY
UY
UY
UY
8 mm
4 mm
USER FEED DIRECTION
Notes:
“U” = Device Code
“Y = Month Code
ESD Precautions
Note: These devices are ESD sensitive. The following pre-
cautions are strongly recommended. Ensure that an ESD
approved carrier is used when die are transported from
one destination to another. Personal grounding is to be
worn at all times when handling these devices. For more
detail, refer to Avago Application Note A004R: Electro-
static Discharge Damage and Control
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2011 Avago Technologies. All rights reserved.
AV02-2917EN - April 11, 2011
Notice:
1. 10 Sprocket hole pitch cumulative tolerance is ±0.1 mm.
2. Pocket position relative to sprocket hole measured as true position
of pocket not pocket hole.
3. Ao & Bo measured on a place 0.3 mm above the bottom of the
pocket to top surface of the carrier.
4. Ko measured from a plane on the inside bottom of the pocket to
the top surface of the carrier.
5. Carrier camber shall be not than 1 m per 100 mm through a length
of 250 mm.
Unit: mm
Symbol Spec.
K1
Po 4.0±0.10
P1 4.0±0.10
P2 2.0±0.05
Do 1.55±0.05
D1 0.5±0.05
E 1.75±0.10
F 3.50±0.05
10Po 40.0±0.10
W 8.0±0.20
T 0.20±0.02
Tape Dimensions