1214-32LR5
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Advanced Power Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-32L
32 Watts, 36 Volts
Pulsed Radar at 1.2-1.4 GHz
GENERAL DESCRIPTION
The 1214 -32L is an internally matched, COMMON BASE transistor capable of
providing 32 Watts of pulsed RF output power at 5 milliseconds pulse width,
20% duty factor across the band 1200 to 1400 MHz. This hermetically solder-
sealed transistor is specifically designed for L-Band radar applications. It
utilizes gold metallization and diffused emitter ballasting to provide high
reliability and supreme ruggedness.
CASE OUTLINE
55AW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C1 125 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 50 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 5 A
Maximum Temperatures
Storage Temperature -65 to +200 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTICS TEST CONDITIONS MIN
TYP
MAX
UNITS
Pout1 Power Output F = 1200-1400 MHz 32 41 W
Pg Power Gain Pin = 5.3 W 7.8 8.9 dB
ηc Collector Efficiency Pulse Width = 5 mS 42 45 %
RL Return Loss Duty Factor = 20% -9 dB
Pd Pulse Droop 0.5 dB
VSWR1 Load Mismatch Tolerance1 F=1200 MHz, Pin=5.3 W 3.0:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 15 mA 3.5 V
BVces Collector to Emitter Breakdown
Ic = 100 mA 50 V
hFE DC – Current Gain Vce = 5V, Ic = 1A 20
θjc1 Thermal Resistance 1.4 °C/W
NOTES: 1. Pulse condition of 5 mS, 20%
Rel 5: March 2005