VS-15EVH06HM3
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Revision: 11-Jun2019 1Document Number: 96158
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Hyperfast Rectifier, 15 A FRED Pt®
DESIGN SUPPORT TOOLS AVAILABLE
FEATURES
Hyperfast recovery time, reduced Qrr and
soft recovery
For PFC CRM / CCM operation
Low forward voltage drop, low power losses
Low leakage current
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified
- Automotive ordering code: base P/NHM3,
meets JESD 201 class 2 whisker test
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters, or as freewheeling
diodes. Their extremely optimized stored charge and low
recovery current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Base PN/HM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
PRIMARY CHARACTERISTICS
IF(AV) 15 A
VR600 V
VF at IF1.2 V
trr (typ.) 20 ns
TJ max. 175 °C
Package SlimDPAK (TO-252AE)
Circuit configuration Single
Heatsink
k
12
Pin 1 Pin 2
1
2
SlimDPAK (TO-252AE)
k
eSMP® Series
1
2
k
3
3
D
D
3
D
3D Models
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage VRRM 600 V
Average rectified forward current IF(AV) TC = 140 °C 15 A
Non-repetitive peak surge current IFSM TJ = 25 °C 120
Operating junction and storage temperatures TJ, TStg -55 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
VBR,
VRIR = 100 μA 600 - -
V
Forward voltage VF
IF = 15 A - 1.6 2.10
IF = 15 A, TJ = 150 °C - 1.2 1.6
Reverse leakage current IR
VR = VR rated - - 20 μA
TJ = 150 °C, VR = VR rated - - 500
Junction capacitance CTVR = 600 V - 17 - pF
VS-15EVH06HM3
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Revision: 11-Jun2019 2Document Number: 96158
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Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time trr
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 30 -
ns
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 20 -
IF = 0.5 A, IR = 1 A, IRR = 0.25 A - - 30
TJ = 25 °C
IF = 15 A
dIF/dt = 500 A/μs
VR = 400 V
-42-
TJ = 125 °C - 90 -
Peak recovery current IRRM
TJ = 25 °C - 7.5 - A
TJ = 125 °C - 13.5 -
Reverse recovery charge Qrr
TJ = 25 °C - 140 - nC
TJ = 125 °C - 550 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage temperature
range TJ, TStg -55 - 175 °C
Thermal resistance, junction to case RthJC - - 1.25 °C/W
Marking device Case style SlimDPAK (TO-252AE) 15EVH06
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5
IF- Instantaneous Forward Current (A)
VF- Forward Voltage Drop (V)
TJ= 25 °C
TJ= 175 °C
TJ= 150 °C
0.001
0.01
0.1
1
10
100
1000
0 100 200 300 400 500 600
IR- Reverse Current (μA)
VR- Reverse Voltage (V)
25 °C
150 °C
175 °C
VS-15EVH06HM3
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Revision: 11-Jun2019 3Document Number: 96158
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Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
10
100
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
120
130
140
150
160
170
180
0 5 10 15 20 25
Allowable Case Temperature (°C)
IF(AV) - Average Forward Current (A)
Square wave (D = 0.50)
80 % rated VRapplied
See note (1)
DC
0
5
10
15
20
25
30
35
0 5 10 15 20
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS limit
VS-15EVH06HM3
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Revision: 11-Jun2019 4Document Number: 96158
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Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt
Fig. 9 - Reverse Recovery Waveform and Definitions
20
40
60
80
100
120
140
100200300400500
trr (ns)
dIF/dt (A/μs)
125 °C
25 °C
0
100
200
300
400
500
600
100 200 300 400 500
Qrr (nC)
dIF/dt (A/μs)
125 °C
25 °C
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve dened by trr
and IRRM
trr x IRRM
2
Qrr =
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
VS-15EVH06HM3
www.vishay.com Vishay Semiconductors
Revision: 11-Jun2019 5Document Number: 96158
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY PACKAGING DESCRIPTION
VS-15EVH06HM3/I 0.20 1 4500 13"diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?96081
Part marking information www.vishay.com/doc?96085
Packaging information www.vishay.com/doc?88869
SPICE model www.vishay.com/doc?96609
2- Current rating (15 = 15 A)
4- V = SlimDPAK (TO-252AE)
E = single die
5- Process type:
H = hyperfast recovery
6- Voltage code (06 = 600 V)
7
3- Circuit conguration:
1-Vishay Semiconductors product
- H = AEC-Q101 qualied
8- Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
Device code
51 32 4 6 87
VS-15 E V H 06 H M3
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 14-Mar-17 1Document Number: 96081
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SlimDPAK
DIMENSIONS in inches (millimeters)
(9.40)
(8.60)
0.370
0.339
(6.72)
(6.48)
0.265
0.255
(6.32)
(6.08)
0.249
0.239
(0.70)
(0.30)
0.028
0.012
(0.41)
(0.25)
0.016
0.010
(1.40)
(1.20)
(0.20)
(0.00)
0.008
0.000
(1.40)
(1.00)
0.055
0.039
(5.70)
(5.30)
0.224
0.209
MIN.
0.240
(6.10)
MIN.
0.235
(5.97)
REF.
0.386
(9.80)
MIN.
0.075
(1.90)
MIN.
0.055
(1.40)
NOM.
0.090
(2.29)
0.055
0.047
0.090
(2.29) NOM. 0.180
(4.57) NOM.
(0.90)
(0.70)
0.035
0.028
NOM.
0.205
(5.20)
Mounting Pad Layout
SlimDPAK
Legal Disclaimer Notice
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Revision: 01-Jan-2019 1Document Number: 91000
Disclaimer
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