MCD26-14io8B Thyristor Module VRRM = 2x 1400 V I TAV = 27 A VT = 1.27 V Phase leg Part number MCD26-14io8B Backside: isolated 3 1 5 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-14io8B Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1500 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1400 V I R/D reverse current, drain current VR/D = 1400 V TVJ = 25C 100 A VR/D = 1400 V TVJ = 125C 3 mA TVJ = 25C 1.27 V 1.64 V 1.27 V VT IT = forward voltage drop 40 A IT = 80 A IT = 40 A IT = 80 A I TAV average forward current TC = 85C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current value for fusing typ. TVJ = 125 C for power loss calculation only Ptot It min. 1.65 V T VJ = 125 C 27 A 50 A TVJ = 125 C 0.85 V 115 W t = 10 ms; (50 Hz), sine TVJ = 45C 520 A t = 8,3 ms; (60 Hz), sine VR = 0 V 560 A t = 10 ms; (50 Hz), sine TVJ = 125 C 440 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 475 t = 10 ms; (50 Hz), sine TVJ = 45C 1.35 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.31 kAs TVJ = 125 C 970 As 940 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 22 t P = 300 s average gate power dissipation critical rate of rise of current K/W 0.20 junction capacitance (di/dt) cr m K/W TC = 25C CJ PGAV 11 0.88 TVJ = 125C; f = 50 Hz repetitive, IT = 45 A non-repet., IT = 27 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.45 A/s; I G = 0.45 A; VD = VDRM 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 125C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 200 mA TVJ = 125 C 0.2 V 10 mA TVJ = 25 C 450 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s 1.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 20 A; VD = VDRM TVJ = 125 C di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-14io8B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 200 Unit A -40 125 C -40 125 C Weight 90 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute Ordering Standard Part Number MCD26-14io8B Similar Part MCMA35PD1600TB MCMA50PD1600TB Equivalent Circuits for Simulation I V0 R0 Package TO-240AA-1B TO-240AA-1B * on die level 2.5 4 Nm Nm 9.7 mm terminal to backside 16.0 16.0 mm 3600 V 3000 V Delivery Mode Box Quantity 6 Code No. 453269 Voltage class 1600 1600 T VJ = 125 C Thyristor V 0 max threshold voltage 0.85 V R 0 max slope resistance * 9.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 13.0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCD26-14io8B 2.5 terminal to terminal t = 1 second isolation voltage g Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-14io8B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 5 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-14io8B Thyristor 60 104 800 VR = 0 V 50 HZ, 80% VRRM DC 180 sin 120 60 30 50 600 40 I2t ITSM TVJ = 45C ITAVM TVJ = 45C 103 400 30 TVJ = 125C [A] [A] [A2s] 20 TVJ = 125C 200 10 0 102 10-3 10-2 10-1 100 0 1 101 2 t [s] 3 6 8 10 0 50 t [ms] Fig. 1 Surge overload current ITSM: Crest value, t: duration 150 Fig. 3 Max. forward current at case temperature Fig. 2 I2t versus time (1-10 ms) 80 100 TC [C] RthJA 10 [KW] 60 1: IGT, TVJ = 125C 1.5 2: IGT, TVJ = 25C 2 3: IGT, TVJ = -40C 2.5 3 PT 4 40 VG 3 [W] [V] 6 DC 180 sin 120 60 30 20 2 1 5 0 10 20 30 40 50 6 4 8 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125C 0 5 1 0 50 100 0.1 100 150 101 102 103 104 IG [mA] TA [C] ITAVM [A] 5W 6: PGM = 10 W Fig. 5 Gate trigger charact. Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor) 1000 400 RthJA TVJ = 25C [KW] 0.1 0.15 300 0.2 100 0.25 Ptot 0.4 [W] Limit tgd 0.3 200 typ. [s] 0.5 100 10 0.6 Circuit B6 3x MCC26 or 3x MCD26 0 0 20 40 60 80 IdAVM [A] 0 50 100 TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 150 1 10 100 1000 IG [mA] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a MCD26-14io8B Rectifier 400 RthJA [KW] 0.1 0.15 300 0.2 0.25 Ptot 0.3 200 0.4 [W] 0.5 Circuit W3 3x MCC26 or 3x MCD26 100 0 20 40 60 0.6 0 50 IRMS [A] 100 150 TA [C] Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature 1.2 RthJC for various conduction angles d: d RthJC [K/W] 30 1.0 60 DC 0.88 120 180 0.92 120 0.95 60 0.98 30 1.01 180 0.8 DC ZthJC 0.6 [K/W] Constants for ZthJC calculation: 0.4 i Rthi [K/W] 0.2 0 10-3 10 -2 10 -1 10 0 10 1 10 10 2 ti [s] 1 0.019 0.0031 2 0.029 0.0216 3 0.832 0.1910 3 t [s] Fig. 9 Transient thermal impedance junction to case (per thyristor) 1.5 RthJK for various conduction angles d: d RthJC [K/W] DC 1.08 180 1.12 120 1.15 60 1.18 30 1.21 30 60 120 180 1.0 DC ZthJK [K/W] Constants for ZthJC calculation: 0.5 i Rthi [K/W] 0 10-3 1 2 3 4 10-2 10-1 100 101 102 0.019 0.029 0.832 0.200 ti [s] 0.0031 0.0216 0.1910 0.4500 103 t [s] Fig. 10 Transient thermal impedance junction to heatsink (per thyristor) IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130617a