1
TM
File Number 4875
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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IS-1715ARH
Radiation Hardened
Complementary Switch FET Driver
The Radiation Hardened IS-
1715ARH is a high speed, high
current complementary power FET
driver designed for use in
synchronous rectification circuits. Soft switching transitions
for the two output waveforms may be managed by setting the
independently programmable delays. The delay pins can
alternatively be configured for zero-voltage sensing to allow
for precise switching control.
The IS-1715ARH has a single input, which is PWM and TTL
compatible, and can run at frequencies up to 1MHz. The
AUX output switches immediately at the rising edge of the
INPUT, but waits for the T2 delay before responding to the
falling edge. A logic low on the enable pin (ENBL) places
both outputs into an active-low mode, and an under voltage
lock-out (UVLO) function is set at 9V(max).
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) process, these devices are immune to
single event latch-up (SEL) and have been specifically
designed to provide highly reliable performance in harsh
radiation environments.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00521. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Pinout IS9-1715ARH
FLATPACK (CDFP4-F16)
TOP VIEW
Features
• Electrically Screened to SMD # 5962-00521
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose 3x105 RAD(Si)
- Latch-up Immune
• PWR Output Current (Source and sink). . . . . . . 3A (peak)
• AUX Output Current (Source and sink) . . . . . . . 3A (peak)
• Low Operating Supply Current. . . . . . . . . . . . . 6mA (max)
• Wide Programmable Delay Range. . . . . . 100ns to 600ns
• Configurable for Zero-Voltage Switching
• Switching Frequency to 1MHz
• Both Outputs Active-Low in Sleep Mode
• 9V(max) Under Voltage Lock-out
Applications
• Synchronous Rectification in Power Supplies
TM
NC
VCC
PWR
VSS
VSS
AUX
NC
NC
2
3
4
5
6
7
8
116
15
14
13
12
11
10
9
ENBL
T1
INPUT
VSS
VSS
T2
VCC
NC
Ordering Information
ORDERING NUMBER INTERNAL
MKT. NUMBER TEMP. RANGE
(oC)
5962F0052101VXC IS9-1715ARH-Q -55 to 125
5962F0052101QXC IS9-1715ARH-8 -55 to 125
IS9-1715ARH/Proto IS9-1715ARH/Proto -55 to 125
Data Sheet August 2000
2
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Die Characteristics
DIE DIMENSIONS:
3559µm x 4420µm (129 mils x 174 mils)
Thickness: 483µm± 25.4µm (19 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
222
Metallization Mask Layout IS-1715ARH
NOTES:
1. All double sized pads should be double bonded.
2. All pin 2 and pin 10 VCC pads are bonded to VCC for power and
noise considerations. (These are lead-frame connected in
packaged devices.)
VCC (10)
VSS (13)
INPUT (14)
T1 (15)
ENBL (16)
VCC (2)
PWR (3)
VSS (4)
VCC (2)
(10) VCC
(12) VSS
(11) T2
(10) VCC
(6) AUX
(5) VSS
(2) VCC
IS-1715ARH
IS-1715ARH
Printer Friendly Version
Rad-Hard Complementary Switch FET Driver
Datasheets,
Related Docs
& Simulations
Description
Parametric
Data
Application
Diagrams
Related
Devices
Ordering Information
Part No.
Design-
In
Status
Temp.
Package
MSL
SMD
Price
US $
IS0-1715ARH-Q
Active
Mil
16 Ld Die
(Military Visual)
N/A
-
Contact
Us
IS9-1715ARH-8
Active
Mil
16 Ld FlatPack
N/A
5962F0052101QXC
Contact
Us
IS9-1715ARH-Q
Active
Mil
16 Ld FlatPack
N/A
5962F0052101VXC
Contact
Us
IS9-1715ARH-
QS9000
Active
Mil
16 Ld FlatPack
N/A
5962F0052101VXC
Contact
Us
The price listed is the manufacturer's suggested retail price for quantities between 100 and
999 units. However, prices in today's market are fluid and may change without notice.
MSL = Moisture Sensitivity Level - per IPC/JEDEC J-STD-020
SMD = Standard Microcircuit Drawing
Description
The Radiation Hardened IS- 1715ARH is a high speed, high current complementary power FET
driver designed for use in synchronous rectification circuits. Soft switching transitions for the two
output waveforms may be managed by setting the independently programmable delays. The delay
pins can alternatively be configured for zero-voltage sensing to allow for precise switching control.
The IS-1715ARH has a single input, which is PWM and TTL compatible, and can run at frequencies
up to 1MHz. The AUX output switches immediately at the rising edge of the INPUT, but waits for the
T2 delay before responding to the falling edge. A logic low on the enable pin (ENBL) places both
outputs into an active-low mode, and an under voltage lock-out (UVLO) function is set at 9V(max).
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, these
devices are immune to single event latch-up (SEL) and have been specifically designed to provide
highly reliable performance in harsh radiation environments.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus
(DSCC). The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-00521. A “hot-link”
is provided on our homepage for downloading.
http://www.intersil.com/spacedefense/space.htm
Key Features
Electrically Screened to SMD # 5962-00521
QML Qualified per MIL-PRF-38535 Requirements
Radiation Environment
Gamma Dose 3x105 RAD(Si)
Latch-up Immune
PWR Output Current (Source and sink) 3A (peak)
AUX Output Current (Source and sink) 3A (peak)
Low Operating Supply Current 6mA (max)
Wide Programmable Delay Range 100ns to 600ns
Configurable for Zero-Voltage Switching
Switching Frequency to 1MHz
Both Outputs Active-Low in Sleep Mode
9V(max) Under Voltage Lock-out
Related Documentation
Datasheet(s):
Radiation Hardened Complementary Switch FET Driver
Military SMD(s):
SMD for IS-1715ARH
Technical Homepage:
Military/Space ICs
Other:
Single Event Effects Testing of the IS-1715ARH Complementary MOSFET Driver
Parametric Data
RH Level
300
Application Block Diagrams
Satellite Power Management
Applications
Synchronous Rectification in Power Supplies
Related Devices
Parametric Table
HS-4423RH
Rad-Hard Dual, Inverting Power MOSFET Drivers
HS-4424BRH
Rad-Hard Dual, Non-Inverting Power MOSFET Drivers
HS-4424RH
Rad-Hard Dual, Non-Inverting Power MOSFET Drivers
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