IRF7343TRPBF - International Rectifier

N-Ch P-Ch

VDSS 55V -55V

RDS(on) 0.050Ω 0.105Ω

HEXFET® Power MOSFET

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques.

4/11/05

SO-8

lGeneration V Technology

lUltra Low On-Resistance

lDual N and P Channel MOSFET

lSurface Mount

lFully Avalanche Rated

IRF7343

Description

N-CHANNEL MOSFET

P- CHANNEL MOSFET

Top View

Max.

N-Channel P-Channel Units

VDS Drain-Source Voltage 55 -55 V

ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.7 -3.4

ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.8 -2.7

IDM Pulsed Drain Current 38 -27

@TA = 25°C Maximum Power Dissipation 2.0 W

@TA = 70°C Maximum Power Dissipation 1.3 W

EAS Single Pulse Avalanche Energy72 114 mJ

IAR Avalanche Current 4.7 -3.4 A

EAR Repetitive Avalanche Energy 0.20 mJ

VGS Gate-to-Source Voltage ± 20 V

dv/dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns

TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

Parameter

Absolute Maximum Ratings

Parameter Typ. Max. Units

RθJA Maximum Junction-to-Ambient  62.5 °C/W

Thermal Resistance

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PD -91709A

IRF7343

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 Surface mounted on FR-4 board, t ≤ 10sec.

Parameter Min. Typ. Max. Units Conditions

N-Ch 55   VGS = 0V, ID = 250µA

P-Ch -55   VGS = 0V, ID = -250µA

N-Ch  0.059  Reference to 25°C, ID = 1mA

P-Ch  0.054  Reference to 25°C, ID = -1mA

 0.043 0.050 VGS = 10V, ID = 4.7A 

 0.056 0.065 VGS = 4.5V, ID = 3.8A 

 0.095 0.105 VGS = -10V, ID = -3.4A 

 0.150 0.170 VGS = -4.5V, ID = -2.7A 

N-Ch 1.0   VDS = VGS, ID = 250µA

P-Ch -1.0   VDS = VGS, ID = -250µA

N-Ch 7.9   VDS = 10V, ID = 4.5A 

P-Ch 3.3   VDS = -10V, ID = -3.1A 

N-Ch   2.0 VDS = 55V, VGS = 0V

P-Ch   -2.0 VDS = -55V, VGS = 0V

N-Ch   25 VDS = 55V, VGS = 0V, TJ = 55°C

P-Ch   -25 VDS = -55V, VGS = 0V, TJ = 55°C

IGSS Gate-to-Source Forward Leakage N-P   ±100 VGS = ±20V

N-Ch  24 36

P-Ch  26 38

N-Ch  2.3 3.4

P-Ch  3.0 4.5

N-Ch  7.0 10

P-Ch  8.4 13

N-Ch  8.3 12

P-Ch  14 22

N-Ch  3.2 4.8

P-Ch  10 15

N-Ch  32 48

P-Ch  43 64

N-Ch  13 20

P-Ch  22 32

N-Ch  740 

P-Ch  690 

N-Ch  190  pF

P-Ch  210 

N-Ch  71 

P-Ch  86 

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient

RDS(ON) Static Drain-to-Source On-Resistance

VGS(th) Gate Threshold Voltage

gfs Forward Transconductance

IDSS Drain-to-Source Leakage Current

QgTotal Gate Charge

Qgs Gate-to-Source Charge

Qgd Gate-to-Drain ("Miller") Charge

td(on) Turn-On Delay Time

trRise Time

td(off) Turn-Off Delay Time

tfFall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V/°C

Ω

µA

N-Channel

ID = 4.5A, VDS = 44V, VGS = 10V



P-Channel

ID = -3.1A, VDS = -44V, VGS = -10V

N-Channel

VDD = 28V, ID = 1.0A, RG = 6.0Ω,

RD = 28Ω



P-Channel

VDD = -28V, ID = -1.0A, RG = 6.0Ω,

RD = 28Ω

N-Channel

VGS = 0V, VDS = 25V,  = 1.0MHz

P-Channel

VGS = 0V, VDS = -25V,  = 1.0MHz

N-Ch

P-Ch

Parameter Min. Typ. Max. Units Conditions

N-Ch   2.0

P-Ch   -2.0

N-Ch   38

P-Ch   -27

N-Ch  0.70 1.2 TJ = 25°C, IS = 2.0A, VGS = 0V 

P-Ch  -0.80 -1.2 TJ = 25°C, IS = -2.0A, VGS = 0V 

N-Ch  60 90

P-Ch  54 80

N-Ch  120 170

P-Ch  85 130

Source-Drain Ratings and Characteristics

ISContinuous Source Current (Body Diode)

ISM Pulsed Source Current (Body Diode) 

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

N-Channel

TJ = 25°C, IF =2.0A, di/dt = 100A/µs

P-Channel 

TJ = 25°C, IF = -2.0A, di/dt = 100A/µs

N-Channel ISD ≤ 4.7A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

P-Channel ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V

(BR)DSS, TJ ≤ 150°C

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 22 )

Notes:

Pulse width ≤ 300µs; duty cycle ≤ 2%.

 N-Channel Starting TJ = 25°C, L = 6.5mH RG = 25Ω, IAS = 4.7A.

P-Channel Starting TJ = 25°C, L = 20mH RG = 25Ω, IAS = -3.4A.

IRF7343

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100

3 4 5 6

V = 2 5 V

20µs PULSE WIDTH

V , Gate-to-Sou rce Voltage (V)

I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

Fig 3. Typical Transfer Characteristics

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 4. Typical Source-Drain Diode

Forward Voltage

N-Channel

100

0.1 1 10 100

20µs PU LSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Sou rce Voltage (V)

I , Drain-to-Source Current (A)

3.0V

100

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

15V

12V

10V

8.0V

6.0V

4.0V

3.5V

3.0V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

3.0V

4.5V 4.5V

0.1

100

0.2 0.5 0.8 1.1 1.4

V ,Sou rce-to-Drain Voltage (V)

I , Reverse Drain Current (A)

V = 0 V

T = 150 C

J°

T = 25 C

J°

IRF7343

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010 20 30 40

0.040

0.060

0.080

0.100

0.120

R , Drain-to-Source On Resistance

I , Drain Current (A)

DS (on)

VGS = 10V

VGS = 4.5V

Fig 5. Normalized On-Resistance

Vs. Temperature

Fig 8. Maximum Avalanche Energy

Vs. Drain Current

Fig 6. Typical On-Resistance Vs. Drain

Current

Fig 7. Typical On-Resistance Vs. Gate

Voltage

N-Channel

(Ω)

DS(on)

, Drain-to-Source On Resistance ( Ω )

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

10V

4.7A

25 50 75 100 125 150

120

160

200

Starting T , Ju nction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

2.1A

3.8A

4.7A

.04

.06

.08

.10

.12

0246810

V , Gate-to-S ource Vo lta g e (V)

I = 4.7A

IRF7343

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1 10 100

200

400

600

800

1000

1200

V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHO RTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

N-Channel

010 20 30 40

Q , Total Gate Charge (nC)

V , Gate-to-Source Voltage (V)

I =

D4.5A

V = 12V

V = 30V

V = 48V

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. D u ty fa c to r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF7343

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0.1

100

0.1 1 10 100

20µs PU LSE WIDTH

T = 25 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

Fig 14. Typical Transfer Characteristics

Fig 13. Typical Output Characteristics

Fig 12. Typical Output Characteristics

Fig 15. Typical Source-Drain Diode

Forward Voltage

P-Channel

0.1

100

0.1 1 10 100

20µs PU LSE WIDTH

T = 150 C

J°

TOP

BOTTOM

VGS

-15V

-12V

-10V

-8.0V

-6.0V

-4.0V

-3.5V

-3.0V

-V , Drain-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

-3.0V

100

34567

V = -25V

20µs PULSE WIDTH

-V , Gate-to-Source Voltage (V)

-I , Drain-to-Source Current (A)

T = 25 C

J°

T = 150 C

J°

0.1

100

0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V ,Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

V = 0 V

T = 25 C

J°

T = 150 C

J°

-4.5V -4.5V

IRF7343

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Fig 16. Normalized On-Resistance

Vs. Temperature

Fig 19. Maximum Avalanche Energy

Vs. Drain Current

Fig 17. Typical On-Resistance Vs. Drain

Current

Fig 18. Typical On-Resistance Vs. Gate

Voltage

P-Channel

0246810 12

0.080

0.120

0.160

0.200

0.240

R , Drain-to-Source On Resistance

-I , Drain Current (A)

DS (on)

VGS = -4.5V

VGS = -10V

(Ω)

-60 -40 -20 020 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

T , Junction Temperature ( C)

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

-10V

-3.4 A

25 50 75 100 125 150

100

150

200

250

300

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

TOP

BOTTOM

-1.5A

-2.7A

-3.4A

DS(on)

, Drain-to-Source On Resistance ( Ω )

.05

.15

.25

.35

.45

2581114

-V , Gate-to-Source Vo l tage (V)

I = -3.4 A

IRF7343

8www.irf.com

010 20 30 40

Q , Total Gate Charge (n C)

-V , Gate-to-Source Voltage (V)

I =

D-3.1A

V =-12V

V =-30V

V =-48V

Fig 21. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 20. Typical Capacitance Vs.

Drain-to-Source Voltage

P-Channel

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. D u ty fa c to r D = t / t

2. Peak T =P x Z + T

1 2

JDM thJA A

t , R ecta ngular Puls e Dur ation (sec)

Thermal R esponse (Z )

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERM AL RESPONSE)

1 10 100

240

480

720

960

1200

-V , Drain-to-Source Voltage (V)

C, Capacitance (pF)

0V,

f = 1MHz

+ C

C SHORTED

iss gs gd , ds

rss gd

oss ds gd

Ciss

Coss

Crss

IRF7343

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SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BASIC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MIN MAX MILLIMETERSINCHES MIN MAX

DIM

8°

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

D B

0.25 [.010] A

K x 45°

8X L 8X c

0.25 [.010] C A B

e1 A

8X b

0.10 [.004]

4312

FOOTPRINT

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OUTLINE CONFORMS TO JE DEC OUT LINE MS -012AA.

NOTES:

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONTROLLING DIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

8X 1.78 [.070

]

DATE CODE (YW W)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F7101

Y = LAST DIGIT OF THE YE AR

PART NUMBER

LOT CODE

WW = WEEK

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

P = DES IGNAT E S L E AD-F RE E

PRODUCT (OPTIONAL)

A = ASSEMB LY SITE CODE

IRF7343

10 www.irf.com

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 04/05

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TE RM I N A L NU M BE R 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

OTES:

. CONTROLLING DIMENSION : MILLIMETER.

. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES).

. OUTLI NE CONFORMS TO EIA-481 & EI A-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)