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©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3
May 2014
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
FOD8333
Input LED Drive, 2.5 A Output Current, IGBT Drive
Optocoupler with Desaturation Detection, Isolated Fault
Sensing, Active Miller Clamp, and Automatic Fault Reset
Features
■Input LED Drive Facilitates Receiving Digitally
Encoded Signals from PWM Output
■Optically Isolated Fault-Sensing Feedback
■Active Miller Clamp to Shut Off IGBT During High
dv/dt without Negative Supply Voltage
■High Noise Immunity Characterized by
Common Mode Rejection – 35 kV/µs Minimum,
VCM = 1500 VPEAK
■2.5 A Peak Output Current Driving Capability for
Medium Power IGBT
–P-Channel MOSFETs at Output Stage Enable
Output Voltage Swing Close to Supply Rail
(Rail-to-Rail Output)
– Wide Supply Voltage Range: 15 V to 30 V
■Integrated IGBT Protection
–Desaturation Detection
– “Soft” IGBT Turn-Off
– Automatic Fault Reset after Fixed Mute Time,
Typically 33 µs
– Under-Voltage Lockout (UVLO) with Hysteresis
■Fast Switching Speed Over Full Operating
Temperature Range
–250 ns Maximum Propagation Delay
– 100 ns Maximum Pulse Width Distortion
■Extended Industrial Temperate Range:
– –40°C to 100°C
■Safety and Regulatory Approvals
– UL1577, 4,243 VRMS for 1 Minute
– DIN-EN/IEC60747-5-5:
1,414 VPEAK Working Insulation Voltage Rating
8,000 VPEAK T
ransient Isolation Voltage Rating
■8 mm Creepage and Clearance Distances
Applications
■AC and Brushless DC Motor Drive
■Industrial Inverter
■Uninterruptible Power Supply
■Induction Heating
■Isolated IGBT/Power MOSFET Gate Drive
Description
The FOD8333 is an advanced 2.5 A output current IGBT
drive optocoupler capable of driving medium-power
IGBTs with ratings up to 1,200 V and 150 A. It is suited
for fast-switching driving of power IGBTs and
MOSFETs in motor-control inverter applications and
high-performance power systems. The FOD8333 offers
protection features necessary for preventing fault condi-
tions that lead to destructive thermal runaway of IGBTs.
The device utilizes Fairchild’s proprietary Optoplanar®
coplanar packaging technology and optimized IC design
to achieve reliable high isolation and high noise immunity,
characterized by high common-mode rejection and power
supply rejection specifications. The device is
housed in a
wide-body, 16-pin, small-outline, plastic package.
The gate-driver channel consists of an aluminum gallium
arsenide (AlGaAs) light-emitting diode (LED) optically
coupled to an integrated high-speed driver circuit with a
low-RDS(ON) MOSFET output stage. The fault-sense
channel consists of an AlGaAs LED optically coupled to
an integrated high-speed feedback circuit for fault
sensing.
Related Resources
■FOD8316—2.5 A Output Current, IGBT Drive
Optocoupler with Desaturation, Isolated Fault Sensing
■FOD8318—2.5 A Output Current, IGBT Drive
Optocoupler with Active Miller Clamp, Desaturation
Detection, and Isolated Fault Sensing
■FOD8332—Input LED Drive, 2.5 A Output Current,
IGBT Drive Optocoupler with Desaturation Detection,
Isolated Fault Sensing, and Active Miller Clamp
■AN-3009—Standard Gate-Driver Optocouplers
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 2
FOD8333 —
Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Truth Table
Note:
1. FAULT pin is connected to a pull-up resistor.
Pin Configuration
Figure 1. Pin Configuration
Pin Definitions
LED UVLO (V
DD
– V
E
)DESAT Detected? FAULT
(1)
V
O
X Active X HIGH LOW
On Not Active Yes LOW LOW
Off X X HIGH LOW
On Not Active No HIGH HIGH
Pin # Name Description
1 GND Ground for Fault-Sense Optocoupler
2V
CC
Positive Supply Voltage (3 V to 15 V) for Fault Sense Optocoupler
3 FAULT Fault-Sense Output
4 GND Ground for Fault-Sense Optocoupler
5V
LED1-
LED1 Cathode
6V
LED1+
LED1 Anode
7V
LED1+
LED1 Anode
8V
LED1-
LED1 Cathode
9V
SS
Negative Output Supply Voltage
10 V
CLAMP
Clamp Supply Voltage
11 V
O
Gate-Drive Output Voltage
12 V
SS
Negative Output Supply Voltage
13 V
DD
Positive Output Supply Voltage
14 DESAT Desaturation Voltage Input
15 V
LED2+
LED2 Anode (Do not connect. Leave floating.)
16 V
E
Output Supply Voltage/IGBT Emitter
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
16
15
14
13
12
11
10
9
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 3
FOD8333 —
Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Block Diagram
Figure 2. Functional Block Diagram
DES
DRIVER
AT
UVLO
V
DD
V
O
V
SS
V
E
OUTPUT IC
LED2
2
1
3
9
11
13
14
16
DESAT
FAULT
MILLER
CLAMP
10 V
CLAMP
15 V
LED2+
V
SS
12
GND
4
GND
V
CC
6
5
7
V
LED1-
8
V
LED1-
V
LED1+
V
LED1+
S
SHIELD
HIELD
FAULT IC
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 4
FOD8333 —
Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings must be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89 Table 1
Rated Mains Voltage < 150 V
RMS
I–IV
Rated Mains Voltage < 300 V
RMS
I–IV
Rated Mains Voltage < 450 V
RMS
I–IV
Rated Mains Voltage < 600 V
RMS
I–IV
Rated Mains Voltage < 1000 V
RMS
I–III
Climatic Classification 40/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index (DIN IEC 112/VDE 0303 Part 1) 175
V
PR
Input-to-Output Test Voltage, Method b, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
2651 V
peak
Input-to-Output Test Voltage, Method a, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
2262 V
peak
V
IORM
Maximum Working Insulation Voltage 1414 V
peak
V
IOTM
Highest Allowable Over Voltage 8000 V
peak
External Creepage 8.0 mm
External Clearance 8.0 mm
Insulation Thickness 0.5 mm
Safety Limit Values – Maximum Values in Failure;
T
Case
Case Temperature 150 °C
Safety Limit Values – Maximum Values in Failure;
P
S,INPUT
Input Power 100 mW
Safety Limit Values – Maximum Values in Failure;
P
S,OUTPUT
Output Power 600 mW
R
IO
Insulation Resistance at T
S
, V
IO
= 500 V 10
9
Ω
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 5
FOD8333 —
Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
T
A
= 25ºC unless otherwise specified.
Notes:
2. No derating required across temperature range.
3. Functional operation under these conditions is not implied. Permanent damage may occur if the device is subjected
to conditions outside these ratings.
4. Derate linearly above 25°C, free air temperature at a rate of 6.2 mW/°C.
5. Maximum pulse width = 10 µs.
6. This negative output supply voltage is optional. It is only needed when negative gate drive is implemented.
Symbol Parameter Value Units
T
STG
Storage Temperature -40 to +125 ºC
T
OPR
Operating Temperature -40 to +100 ºC
T
J
Junction Temperature -40 to +125 ºC
T
SOL
Lead Solder Temperature
(not certified for wave immersion)
Refer to reflow temperature profile on page 31
260 for 10 s ºC
PD
I
Input Power Dissipation
(2)(3)
45 mW
PD
O
Output Power Dissipation
(3)(4)
600 mW
Gate Drive Channel
I
F(AVG)
Average Input Current 25 mA
I
F(PEAK)
Peak Transient Forward Current
(Pulse Width < 1 µs)
1.0 A
I
OH(PEAK)
Peak Output High Current
(5)
3.0 A
I
OL(PEAK)
Peak Output Low Current
(5)
3.0 A
V
R
Reverse Input Voltage 5.0 V
V
E
– V
SS
Negative Output Supply Voltage
(6)
-0.5 to 15 V
V
DD
– VE Positive Output Supply Voltage -0.5 to 35 – (V
E
– V
SS
)V
V
O(PEAK)
– V
SS
Gate Drive Output Voltage -0.5 to 35 V
V
DD
– V
SS
Output Supply Voltage -0.5 to 35 V
V
DESAT
Desaturation Voltage V
E
to V
E
+ 25 V
I
DESAT
Desaturation Current 60 mA
V
CLAMP
– V
SS
Active Miller Clamping Voltage -0.5 to 35 V
I
CLAMP
Peaking Clamping Sinking Current 1.7 A
t
R(IN)
, t
F(IN)
Input Signal Rise and Fall Time 500 ns
Fault Sense Channel
VCC Positive Input Supply Voltage -0.5 to 20 V
VFAULT FAULT Output Voltage -0.5 to 20 V
IFAULT FAULT Output Current 16.0 mA
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 6
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Note:
7. During power up or down, ensure that both the input and output supply voltages reach the proper recommended
operating voltages to avoid any momentary instability at the output state.
Isolation Characteristics
Apply over all recommended conditions; typical value is measured at TA = 25ºC.
Notes:
8. Device is considered a two-terminal device: pins 1 to 8 are shorted together and pins 9 to 16 are shorted together.
9. 4,243 VRMS for 1-minute duration is equivalent to 5,091 VRMS for 1-second duration.
10. The input-output isolation voltage is a dielectric voltage rating per UL1577. It should not be regarded as an
input-output continuous voltage rating. For the continuous working voltage rating, refer to equipment-level safety
specification or DIN EN/IEC 60747-5-5 Safety and Insulation Ratings Table on page 4.
Symbol Parameter Min. Max. Unit
TAAmbient Operating Temperature -40 +100 ºC
IF(ON) Input Current (ON) 7 16 mA
VF(OFF) Input Voltage (OFF) -3.6 0.8 V
VCC Supply Voltage 3 15 V
VDD – VSS Total Output Supply Voltage 15 30 V
VDD – VEPositive Output Supply Voltage(7) 15 30 – (VE – VSS)V
VE – VSS Negative Output Supply Voltage 0 15 V
tPW Input Pulse Width 500 ns
Symbol Parameter Conditions Min. Typ. Max. Units
VISO Input-Output Isolation
Voltage
TA = 25°C, Relative Humidity < 50%,
t = 1.0 minute, II-O ≤ 10 µA, 50 Hz
(8)(9)(10)
4,243 VRMS
RISO Isolation Resistance VI-O = 500 V(8) 1011
CISO Isolation Capacitance VI-O = 0 V, Frequency = 1.0 MHz(8) 1pF
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 7
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Electrical Characteristics
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Units Figure
Gate Drive Channel
VFInput Forward Voltage IF = 10 mA 1.10 1.45 1.80 V 5
Δ(VF/TA)Temperature Coefficient
of Forward Voltage
-1.5 mV/ºC
BVRInput Reverse
Breakdown Voltage
IR = 10 µA 5V
CIN Input Capacitance f = 1 MHz, VF = 0 V 60 pF
IFLH Threshold Input Current,
Low to High
IO = 0 mA, VO > 5 V 2.5 7.0 mA 30
VFHL Threshold Input Voltage,
High to Low
IO = 0 mA, VO < 5 V 0.8 V 31
IOH High Level Output
Current
VO = VDD – 3 V,
IF = 10 mA
-1.0 -2.5 A 6, 10,
32
VO = VDD – 6 V,
IF = 10 mA(11) -2.5 A
IOL Low Level Output
Current
VO = VSS + 3 V, IF = 0 mA 1 3 A 7, 11,
33
VO = VSS + 6 V,
IF = 0 mA(12) 2.5 A
IOLF Low Level Output
Current During Fault
Condition
VO – VSS = 14 V 70 125 170 mA 34
VOH High Level Output
Voltage
IF = 10 mA,
IO = –100 mA(13)(14)(15) VDD – 1.0 VDD – 0.2 V 8, 10,
35
VOL Low Level Output Voltage IF = 0 mA, IO = 100 mA 0.1 0.5 V 9, 11,
36
IDDH High Level Supply
Current
VO = Open, IO = 0 mA 2.5 5.0 mA 12, 13,
37
IDDL Low Level Supply
Current
VO = Open, IO = 0 mA 2.5 5.0 mA 12, 13,
38
IEL VE Low Level Supply
Current
-0.8 -0.5 mA 38
IEH VE High Level Supply
Current
-0.50 -0.25 mA 37
ICHG Blanking Capacitor
Charge Current
VDESAT = 2 V(15)(16) -0.33 -0.25 -0.13 mA 14, 39
IDSCHG Blanking Capacitor
Discharge Current
VDESAT = 7 V 10 40 mA 39
VUVLO+ Under-Voltage Lockout
Threshold(14)
IF = 10 mA, VO > 5 V 10.8 11.7 12.7 V 40
VUVLO- IF = 10 mA, VO < 5 V 9.8 10.7 11.7 V
UVLOHYS Under-Voltage Lockout
Threshold Hysteresis
1.0 V
VDESAT DESAT Threshold(14) VDD – VE > VULVO– 6.0 6.5 7.2 V 15, 39
VCLAMP_THRES Clamping Threshold
Voltage
2.0 V 41
ICLAMPL Clamp Low Level Sinking
Current
VO = VSS + 2.5 V 0.35 1.10 A 16, 42
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 8
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Notes:
11. Maximum pulse width = 10 µs, maximum duty cycle = 0.2%.
12. Minimum pulse width = 4.99 ms, minimum duty cycle = 99.8%.
13. VOH is measured with the DC load current in this testing (maximum pulse width = 1 ms, maximum duty
cycle = 20%). When driving capacitive loads, VOH approaches VDD as IOH approaches zero units.
14. Positive output supply voltage (VDD – VE) should be at least 15 V to ensure adequate margin in excess of the
maximum under-voltage lockout threshold, VUVLO+, of 12.7 V.
15. When VDD – VE > VUVLO and the output state VO is allowed to go HIGH, the DESAT-detection feature is active and
provides the primary source of IGBT protection. UVLO is needed to ensure DESAT detection is functional.
16. The blanking time, tBLANK, is adjustable by an external capacitor (CBLANK), where tBLANK = CBLANK × (VDESAT / ICHG).
Fault Feedback Channel
ICCH FAULT High Level Supply
Current
IF2 = 0 mA,
VFAULT = Open,
VCC = 15 V
0.0004 2 µA 43
ICCL FAULT Low Level Supply
Current
IF2 = 16 mA,
VFAULT = Open,
VCC = 15V
150 200 µA 44
IFAULTH FAULT Logic High Output
Current
VFAULT = VCC = 5.5 V 0.02 0.50 µA 45
IFAULTL FAULT Logic Low Output
Current
VFAULT = 0.4 V,
VCC = 5.5 V
1.1 mA 17, 46
Symbol Parameter Conditions Min. Typ. Max. Units Figure
Electrical Characteristics (Continued)
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 9
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Switching Characteristics
Apply over all recommended conditions; typical value is measured at VCC = 5 V, VDD – VSS = 30 V, VE – VSS = 0 V, and
TA = 25°C; unless otherwise specified.
Notes:
17. This load condition approximates the gate load of a 1200 V / 150 A IGBT.
18. Propagation delay tPHL is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal.
19. Propagation delay tPLH is measured from the 50% level on the rising edge of the input pulse to the 50% level of the
rising edge of the VO signal.
20. PWD is defined as | tPHL – tPLH | for any given device.
21. The difference between tPHL and tPLH between any two parts under same operating conditions with equal loads.
22. The length of time the DESAT threshold must be exceeded before VO begins to go LOW. This is supply voltage
dependent.
Symbol Parameter Conditions Min. Typ. Max. Units Figure
tPHL Propagation Delay to Logic
Low Output(18) Rg = 10 Ω, Cg =10 nF,
f = 10 kHz,
Duty Cycle = 50%,
IF = 10 mA,
VDD – VSS = 30 V(17)
100 135 250 ns 18, 19,
20, 21,
47
tPLH Propagation Delay to Logic
High Output(19) 100 150 250 ns
PWD Pulse Width Distortion,
| tPHL – tPLH|(20)
15 100 ns 47
PDD Skew Propagation Delay Difference
Between Any Two Parts or
Channels, ( tPHL – tPLH)(21)
-150 150 ns
tROutput Rise Time
(10% to 90%)
50 ns 47
tFOutput Fall Time
(90% to 10%)
50 ns
tDESAT(LOW) DESAT Sense to DESAT Low
Propagation Delay(24) Rg = 10 Ω, Cg = 10 nF,
VDD – VSS = 30 V
(CDESAT = 100pF,
RF = 4.7 kΩ, VCC = 5.5 V)
0.25 µs
tDESAT(90%) DESAT Sense to 90% VO
Delay(22) 0.45 0.70 µs 22, 48
tDESAT(10%) DESAT Sense to 10% VO
Delay(22) 2.8 4.0 µs 23, 24,
25, 48
tDESAT(FAULT) DESAT Sense to Low Level
FAULT Signal Delay(23) 0.5 1.5 µs 26, 48
tDESAT(MUTE) DESAT Input Mute 20 33 45 µs 48
tUVLO ON UVLO Turn-On Delay(25) VDD = 20 V in 1.0 ms
Ramp
4.0 µs 49
tUVLO OFF UVLO Turn-Off Delay(26) 4.0 µs
tGP Time-to-Good Power(27) VDD = 0 to 30 V in 10 µs
Ramp
2 µs 28, 29,
49
| CMH | Common Mode Transient
Immunity at Output High
TA = 25˚C, VCC = 5 V,
VDD = 25 V, VSS = Ground,
CF = 15 pF, RF = 4.7 kΩ,
VCM = 1500 VPEAK(28)
35 50 kV/µs 51, 52
| CML | Common Mode Transient
Immunity at Output Low
TA = 25˚C, VCC = 5 V,
VDD = 25 V, VSS = Ground,
CF = 15 pF, RF = 4.7 kΩ,
VCM = 1500 VPEAK(29)
35 50 kV/µs 50, 53
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 10
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
23. The time from DESAT threshold is exceeded until the FAULT output goes LOW.
24. The length of time the DESAT threshold must be exceeded before VO begins to go LOW and the FAULT output
begins to go LOW.
25. The UVLO turn-on delay, tUVLO ON, is measured from the VUVLO+ threshold level of the rising edge of the output
supply voltage (VDD) to the 5 V level of the rising edge of the VO signal.
26. The UVLO turn-off delay, tUVLO OFF, is measured from the VUVLO– threshold level of the falling edge of the output
supply voltage (VDD) to the 5 V level of the falling edge of the VO signal.
27. The time to good power, tGP, is measured from the VUVLO+ threshold level of the rising edge of the output supply
voltage (VDD) to the 5 V level of the rising edge of the VO signal.
28. Common-mode transient immunity at output HIGH state is the maximum tolerable negative dVCM / dt on the trailing
edge of the common-mode pulse, VCM, to assure the output remains in HIGH state (i.e., VO > 15 V or VFAULT > 2 V).
29. Common-mode transient immunity at output LOW state is the maximum positive tolerable dVCM / dt on the leading
edge of the common-mode pulse, VCM, to ensure the output remains in LOW state (i.e., VO < 1.0 V or
VFAULT < 0.8 V).
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 11
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Timing Diagrams
Figure 3. tPLH, tPHL, tR, and tF Timing Diagram
Figure 4. Definitions for DESAT, VO and FAULT Timing Waveforms
IF
VO
tR
90%
50%
10%
tPLH tPHL
tF
VDESAT
VO
IF
50%
tDESAT(LOW)
Automatic Reset
after Mute Time
tDESAT(10%)
tBLANK
tDESAT(MUTE)
tDESAT(90%)
tDESAT(FAULT)
FAULT
6.5V
50%
50%
90%
10%
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 12
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Typical Performance Characteristics
IOH – HIGH LEVEL OUTPUT CURRENT (A)
Figure 6. High Level Output Current (IOH)
vs. Temperature
Figure 10. High Level Output Voltage (VOH)
vs. High Level Output Current (IOH)
Figure 7. Low Level Output Current (IOL)
vs. Temperature
7
6
5
4
3
2
1
7
6
5
4
3
2
1
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
IOL – LOW LEVEL OUTPUT CURRENT (A)
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
IF – INPUT FORWARD CURRENT (mA)
Figure 5. Input Forward Current (IF)
vs. Voltage (VF)
100.00
10.00
1.00
0.10
0.01
VF – INPUT FORWARD VOLTAGE (V)
VOH – HIGH LEVEL OUTPUT VOLTAGE (V)
30.0
29.5
29.0
28.5
28.0
0 0.2 0.4 0.6 0.81.0
IOH – HIGH LEVEL OUTPUT CURRENT (A)
TA = -40°C
25°C
100°C
0.8 1.0 1.2 1.4 1.6 1.8
100°C 25°C -40°C
ILED1+ = 10 mA
VDD – VSS = 30 V
ILED1+ = 0 A
VDD – VSS = 30 V
VOH = VDD – 6 V
VOH = VDD – 3 V
– HIGH LEVEL OUTPUT VOLTAGE (V)
Figure 8. High Level Output Voltage (VOH – VDD)
vs. Temperature
0.00
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
ILED1+ = 10 mA
VDD – VSS = 30 V
IOH = -100 mA
ILED1+ = 10 mA
VDD – VSS = 30 V
VOL = VSS + 6 V
VOL = VSS + 3 V
Figure 9. Low Level Output Voltage (VOL)
vs. Temperature
0.20
0.15
0.10
0.05
0
VOL – LOW LEVEL OUTPUT VOLTAGE (V)
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
ILED1+ = 0 A
VDD – VSS = 30 V
IOL = 100 mA
VOH – VDD
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 13
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Typical Performance Characteristics (Continued)
gp(
OH)
Figure 12. Output Supply Current (IDD)
vs. Temperature
Figure 14. Blanking Capacitor Charge
Current (ICHG) vs. Temperature
Figure 13. Output Supply Current (IDD)
vs. Voltage (VDD)
Figure 11. Low Level Output Voltage (VOL) vs.
Low Level Output Current (IOL)
IDD – OUTPUT SUPPLY CURRENT (mA)
3.0
2.5
2.0
1.5
15 20 25 30
VDD – OUTPUT SUPPLY VOLTAGE (V)
VOL – LOW LEVEL OUTPUT VOLTAGE (V)
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
IOL – LOW LEVEL OUTPUT CURRENT (A)
-40°C
25°C
TA = 100°C
IDD – OUTPUT SUPPLY CURRENT (mA)
3.0
2.8
2.6
2.4
2.2
2.0
-40-20 0 20406080100
TA – TEMPERATURE (°C)
IDDH
IDDL
IDDL
IDDH
ICHG – BLANKING CAPACITOR CHARGE
CURRENT (mA)
-0.15
-0.20
-0.25
-0.30
-40-20 0 20406080100
TA – TEMPERATURE (°C)
ILED1+ = 0 A (IDDL) / 10 mA (IDDH)
VDD – VSS = 30 V
VO = Open
ILED1+ = 0 A (IDDL) / 10 mA (IDDH)
VDD – VSS = 30 V
VO = Open
ILED1+ = 10 mA
VDD – VSS = 30 V
ILED1+ = 10 mA
VDD – VSS = 30 V
VDESAT = 2V
ILED1+ = 0 A
VDD – VSS = 30 V
Figure 16. Clamp Low Level Sinking
Current (ICLAMPL) vs. Temperature
ICLAMPL – CLAMP LOW LEVEL SINKING
CURRENT (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40-20 0 20406080100
TA – TEMPERATURE (°C)
ILED1+ = 0 mA
VDD – VSS = 30 V
VCLAMP = VSS + 2.5V
VDESAT – DESAT THRESHOLD (V)
7.00
6.75
6.50
6.25
6.00
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (C)
Figure 15. DESAT Threshold (VDESAT)
vs. Temperature
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 14
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Typical Performance Characteristics (Continued)
VCC = 5.5 V
ILED2+ = 10 mA
Figure 19. Propagation Delay (tP)
vs. Supply Voltage (VDD)
15 20 25 30
VDD – SUPPLY VOLTAGE (V)
Figure 17. FAULT Logic Low Output
Current (IFAULTL) vs. Voltage (VFAULTL)
Figure 18. Propagation Delay (tP)
vs. Temperature
tP – PROPAGATION DELAY (ns)
250
200
150
100
50
0
tP – PROPAGATION DELAY (ns)
250
200
150
100
50
0
-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Rg = 10 Ω, Cg = 10 nF
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
Rg = 10 Ω, Cg = 10 nF
tPLH
tPLH
tPHL
tPHL
10
8
6
4
2
0
012345
IFAULTL – FAULT LOGIC LOW OUTPUT CURRENT (mA)
VFAULTL – FAULT LOGIC LOW OUTPUT VOLTAGE (V)
-40°C
25°C
100°C
Figure 22. DESAT Sense to 90% VO
Delay (tDESAT(90%)) vs. Temperature
tDESAT(90%) – DESAT SENSE TO 90% VO DELAY (µs)
1.0
0.8
0.6
0.4
0.2
0.0-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω, Cg = 10 nF
VDD – VSS = 30 V
VDD – VSS = 15 V
Figure 20. Propagation Delay (tP)
vs. Load Resistance (Rg)
0204010 3050
Rg – LOAD RESISTANCE (Ω)
tP – PROPAGATION DELAY (ns)
250
200
150
100
50
0
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Cg = 10 nF
tPLH
tPHL
Figure 21. Propagation Delay (tP)
vs. Load Capacitance (Cg)
0204010 3050
Cg – LOAD CAPACITANCE (nF)
tP – PROPAGATION DELAY (ns)
250
200
150
100
50
0
ILED1+ = 10 mA
f = 10 kHz 50% Duty Cycle
VDD – VSS = 30 V
Rg = 10 Ω
tPLH
tPHL
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 15
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Typical Performance Characteristics (Continued)
Rg – LOAD RESISTANCE (Ω)
0204010 3050
Cg – LOAD CAPACITANCE (nF)
Figure 23. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Temperature
t
tDESAT(10%) – DESAT SENSE TO 10% VO DELAY (µs)
5
4
3
2
1
0-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω, Cg = 10 nF
VDD – VSS = 30 V
VDD – VSS = 15 V
Figure 24. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Load Resistance (Rg)
tDESAT(10%) – DESAT SENSE TO 10% VO DELAY (µs)
tDESAT(FAULT) – DESAT SENSE TO LOW LEVEL
FAULT SIGNAL DELAY (µs)
5
4
3
2
1
0
Figure 25. DESAT Sense to 10% VO
Delay (tDESAT(10%)) vs. Load Capacitance (Cg)
DESAT(10%) – DESAT SENSE TO 10% VO DELAY (µs)
15
10
5
0
10 20 3040 50
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Cg = 10 nF
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω
VDD – VSS = 30 V
VDD – VSS = 30 V VCC = 5.5 V
VCC = 3.3 V
VDD – VSS = 30 V
VDD – VSS = 15 V
VDD – VSS = 15 V
0.55
0.50
0.45
0.40
0.35
0.30
0.25 46810
RF – FAULT LOAD RESISTANCE (kΩ)
Figure 26. DESAT Sense to Low Level Fault Signal
Delay (tDESAT(FAULT)) vs. Fault Load Resistance (RF)
100°C
100°C
25°C
25°C
-40°C
-40°C
Figure 27. DESAT Input Mute (tDESAT(MUTE))
vs. Temperature
Figure 28. Time-to-Good Power (tGP)
vs. Temperature
tGP – TIME TO GOOD POWER (µs)
5
4
3
2
1
0-40-20 0 20406080100
TA – TEMPERATURE (°C)
VDD – VSS = 30 V
ILED1+ = 10 mA
tDESAT(MUTE) – DESAT INPUT MUTE (µs)
50
40
30
20
10
0-40 -20 0 20 40 60 80100
TA – TEMPERATURE (°C)
VDD – VSS = 15 V / 30 V
ILED1+ = 10 mA
Rg = 10 Ω, Cg = 10 nF
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 16
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Typical Performance Characteristics (Continued)
Figure 29. Time-to-Good Power (tGP) vs. Output Supply Voltage (VDD)
tGP – TIME TO GOOD POWER (µs)
5
4
3
2
1
015 20 25 30
VDD – OUTPUT SUPPLY VOLTAGE (V)
ILED1+ = 10 mA
TA = 25°C
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 17
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits
Figure 30. Threshold Input Current Low-to-High (IFLH) Test Circuit
Figure 31. Threshold Input Voltage High-to-Low (VFHL) Test Circuit
Figure 32. High Level Output Current (IOH) Test Circuit
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
0A
10mA
VE
VO
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
0V
2V
VE
VO
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
+
–
+
–
VIN
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
Period = 5ms
PW = 10μs
VE
VO
IOH
RM
0.1µF
0.1µF
0.1µF
47µF
47µF0.1µF
10mA
16
15
14
13
12
11
10
9
+
–
+
–30V
+
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 18
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 33. Low Level Output Current (IOL) Test Circuit
Figure 34. Low Level Output Current During Fault Condition (IOLF) Test Circuit
Figure 35. High Level Output Voltage (VOH) Test Circuit
+
–
V
IN
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
Period = 5ms
PW = 4.99ms
V
E
V
O
I
OL
R
M
0.1µF
0.1µF
0.1µF
47µF
47µF0.1µF
10mA
16
15
14
13
12
11
10
9
+
–
+
–
30V
+
–
V
IN
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
V
E
I
OLF
V
O
R
M
0.1µF
4.7kΩ
0.1µF
0.1µF
100pF
10nF
10Ω
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
V
FAULT
V
CC +
–
V
DESAT
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
100mA
VE
VOH
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 19
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 36. Low Level Output Voltage (VOL) Test Circuit
Figure 37. High Level Supply Current (IDDH), VE High Level Supply Current (IEH) Test Circuit
Figure 38. Low Level Supply Current (IDDL), VE Low Level Supply Current (IEL) Test Circuit
VOL
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
100mA
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
IEH
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
IDDH
IEL
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
IDDL
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 20
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 39. DESAT Threshold (VDESAT), Blanking Capacitor Charge Current (ICHG),
Blanking Capacitor Discharge Current (IDSCHG) Test Circuit
Figure 40. Under-Voltage Lockout Threshold (VUVLO+ / VUVLO-), Under-Voltage Lockout Threshold
Hysteresis (UVLOHYS) Test Circuit
Figure 41. Clamping Threshold Voltage (VCLAMP_THRES) Test Circuit
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
ICHG
IDSCHG
VDESAT
VCC
+
–0.1µF
4.7kΩ
+
–
0V
8V
VO
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
+
–
VUVLO+ VUVLO–
0V 0V
15V
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
0A
VE
0.1µF
0.1µF
0.1µF
30V
16
15
14
13
12
11
10
9
+
–
+
–
VTCLAMP 0V
5V
50Ω
+
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 21
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 42. Clamp Low Level Sinking Current (ICLAMPL) Test Circuit
Figure 43. FAULT High Level Supply Current (ICCH) Test Circuit
Figure 44. FAULT Low Level Supply Current (ICCL) Test Circuit
ICLAMPL
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
VE
0.1µF
0.1µF
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
2.5V
+
–
ICCH
VFAULT
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
16
15
14
13
12
11
10
9
0.1µF
15V +
–
ICCL
VFAULT
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
16
15
14
13
12
11
10
9
0.1µF
16mA
15V +
–
0.1µF
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 22
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 45. FAULT High Level Output Current (IFAULTH) Test Circuit
Figure 46. FAULT Low Level Output Voltage (VFAULTL) Test Circuit
Figure 47. Propagation Delay (tPLH, tPHL), Rise Time(tR), Fall Time (tF),
Pulse Width Distortion (PWD) Test Circuit
IFAULTH
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
16
15
14
13
12
11
10
9
0.1µF
5.5V +
–
5.5V +
–
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
16
15
14
13
12
11
10
9
10mA
0.1µF
VFAULTL 0.1µF
5.5V +
–
1.1mA +
–
VIN
VO
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
10mA
f = 10kHz
DC = 50%
VE
RM
10Ω
0.1µF
0.1µF
0.1µF
10nF
16
15
14
13
12
11
10
9
+
–
30V
+
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 23
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 48. DESAT Sense Delay (tDESAT(90%)), tDESAT(10%)), tDESAT(LOW)), DESAT Sense to
Low Level FAULT Signal Delay (tDESAT(FAULT)), DESAT Input Mute (tDESAT(MUTE)) Test Circuit
Figure 49. Under-Voltage Lockout Delay (tUVLO), Time-to-Good-Power (tGP) Test Circuit
Figure 50. Common-Mode Low (CML) LED1-Off Test Circuit
VIN
1
2
3
4
5
6
7
8
GND
V
CC
FAULT
GND
V
LED1–
V
LED1+
V
LED1+
V
LED1–
V
E
V
LED2+
DESAT
V
DD
V
SS
V
O
V
CLAMP
V
SS
FOD8333
10mA
VE
VO
RM
0.1µF
4.7kΩ
0.1µF
0.1µF
100pF
10nF
10Ω
0.1µF
16
15
14
13
12
11
10
9
+
–
30V
+
–
VFAULT
VCC +
–VDESAT
VO
1
2
3
4
5
6
7
8
GND
V
CC
FAULT
GND
V
LED1–
V
LED1+
V
LED1+
V
LED1–
V
E
V
LED2+
DESAT
V
DD
V
SS
V
O
V
CLAMP
V
SS
FOD8333
10mA
VE
tUVLO tr= tf= 1ms
TGP tr= tf= 10μs
0.1µF
0.1µF
20V
0.1µF
16
15
14
13
12
11
10
9
+
–
Scope
360Ω
1
2
3
4
5
6
7
8
GND
V
CC
FAULT
GND
V
LED1–
V
LED1+
V
LED1+
V
LED1–
V
E
V
LED2+
DESAT
V
DD
V
SS
V
O
V
CLAMP
V
SS
FOD8333
VCM
0.1µF
4.7kΩ
15pF
or 1nF
10nF
10Ω
16
15
14
13
12
11
10
9
25V
+
–
0.1μF
5V +
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 24
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Test Circuits (Continued)
Figure 51. Common-Mode High (CMH) LED1-On Test Circuit
Figure 52. Common-Mode High (CMH) LED2-Off Test Circuit
Figure 53. Common-Mode High (CML) LED2-On Test Circuit
Scope
360Ω
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
VCM
0.1µF
4.7k Ω
15pF
or 1nF
10nF
10Ω
16
15
14
13
12
11
10
9
25V
+
–
0.1μF
5V +
–
Scope
360Ω
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
VCM
0.1µF
4.7kΩ
15pF
or 1nF
10nF
10Ω
16
15
14
13
12
11
10
9
25V
+
–
0.1μF
5V +
–
Scope
360Ω
1
2
3
4
5
6
7
8
GND
VCC
FAULT
GND
VLED1–
VLED1+
VLED1+
VLED1–
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
VCM
0.1µF
4.7kΩ
15pF
or 1nF
10nF
10Ω
16
15
14
13
12
11
10
9
25V
+
–
0.1μF
5V +
–
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 25
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Application Information
Figure 54. Recommended Application Circuit
Functional Description
The functional behavioral of FOD8333 is illustrated by
the detailed internal schematic shown in Figure 55.
Figure 55 and the timing diagrams explain the inter
action
and sequence of internal and external signals.
Figure 55. Detailed Internal Behavioral Schematic
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
+
–
+
–
GND1
VCC
FAULT
GND
VLED–
VLED+
VLED+
VLED–
Micro Controller
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
3-Phase
AC
+HVDC
–HVDC
RF
RG
CF
CBLANK
RLED
0.1µF
0.1µF
DDESAT
VCE
VCE
Q1
Q2
0.1µF
100Ω
–
+
–
+
VDD
VUVLO
13
VO
11
50x
1x VSS
9
VCLAMP
10
DESAT
+
–
–
+
14
250μA
+
–2V
VE
16
GND
UVLO Comparator
Delay
Pulse
Generator
1, 4
FAULT 3
25x
VDESAT
VLED1+ 6, 7
VLED1– 5, 8
VLED2+
VCC 2
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 26
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Figure 56. Operating Relationsip Among Desaturation Voltage (DESAT), Fault Output (FAULT),
and Reset Conditions
1. LED Input and Operation Explanation
FOD8333 is an advanced IGBT gate-drive optocoupler
capable of driving most 1200 V / 150 A IGBTs and power
MOSFETs in motor control and inverter applications.
The following section describes driving IGBT, but is also
applicable to driving MOSFET. Adjust the VDD supply
based on the gate threshold voltages. Critical protection
features and controls are incorporated to simplify the
design and improve reliability. The device includes an
IGBT desaturation detection protection and a FAULT
status output.
This highly integrated device consists of two high-
performances AlGaAs LEDs and two integrated circuits.
LED1 directly controls the isolated gate driver IC output,
while the returned optical signal path is transmitted by
LED2, which reports the fault status through the open-
collector fault-sense IC output.
The control LED input and the fault-sense IC output
can be connected to a standard 3.3 V / 5 V DSP or
microcontroller. The gate driver output can be connected
to the gate of the power devices on the high-voltage side.
A typical recommended application is shown in
Figure 54. A typical shunt LED drive can be used to
improve noise immunity. The LED is connected in
parallel with the bipolar transistor switch, creating a
current shunt drive. Common-mode transients from the
load coupling via the package capacitance can be
coupled into a low-impedance path, either the
conducting LED or the on resistance of the conducting
bipolar transistor, increasing its noise immunity.
During normal operation, when no fault is detected,
LED1 controls the gate driver output. VO is set to HIGH
when the current flowing from the anode to the cathode
(LED1) is greater than IFLH and the forward voltage VF is
greater than VF(MIN). The timing relationship between
the LED input and gate driver output is illustrated in
Figure 3. When a fault is detected, the gate driver ouptut
IC immediately enters “soft” turn-off mode, where the
output voltage changes slowly from HIGH to LOW state.
This also disables the gate control input on the gate
driver IC side for a minimum mute time, tDESAT(MUTE), of
20 µs.
The FAULT output, which is open-collector configura-
tion, is latched to LOW state to report a fault status to the
microcontroller. It is only reset or pulled back to HIGH
automatically after the fixed mute time, tDESAT(MUTE).
The active Miller clamp function avoids the need of
negative gate driving in most applications and allows the
use of a simple bootstrap supply for the high-side driver.
2. Gate Driver Output
A pair of PMOS and NMOS make up the output driver
stage, which facilitates close to rail-to-rail output swing.
This feature allows tight control of gate voltage during
on-state and short-circuit conditions.
The output driver can typically sink 2.5 A and source
2.5 A at room temperature. Due to the low RDS(ON) of the
MOSFETs, the power dissipation is lower than bipolar-
type driver output stages. The absolute maximum rating
of the output peak current, IO(PEAK), is 3 A. Careful
selection of the gate resistor, RG, is required to avoid
violation of this rating. For charging and discharging, the
RG value is approximated by:
RG = VCC – VEE – VOL / IOL(PEAK) (1)
Normal
Operation
Fault Condition Automatic
Reset
VO
FAULT
VDESAT
6.5V
IF
Blanking
Time
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 27
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
As shown in Figure 55, the gate driver output is
influenced by signals from the photodetector circuitry,
the UVLO comparator, and the DESAT signals. Under
no-fault condition, normal operation resumes while the
supply voltage is above the UVLO threshold and the
output of the photodetector drives the MOSFETs of the
output stage. The logic circuitry of the output stage
ensures that the push-pull devices are never turned ON
simultaneously. When the output of the photodetector is
HIGH, output VO is pulled to HIGH state by turning on
the PMOS. When the output of the photodetector is
LOW, VO is pulled to LOW state by turning on the
50XNMOS.
When VDD supply goes below VUVLO, which is the
designated ULVO threshold at the comparator, VO is
pulled to LOW state regardless of photodetector output.
When VO is HIGH and desaturation is detected, VO turns
off slowly as it is pulled LOW by the 1XNMOS device.
The input to the fault-sense circuitry is latched to HIGH
state and turns on the LED2. The fault-sense signal
remains in HIGH state until LED1 is switched from LOW
to HIGH. When VO goes below 2 V, the 50XNMOS
device turns on, clamping the IGBT gate firmly to VSS.
3. Desaturation Protection, FAULT Output and
FAULT RESET
Desaturation detection protects the IGBT in short circuit
by monitoring the collector-emitter voltage of the IGBT
when it’s turned on. When the DESAT pin voltage goes
above the threshold voltage, a short-circuit condition is
detected and the driver output stage executes a “soft”
IGBT turn-off and is eventually driven LOW. This
sequence is illustrated in Figure 56. The FAULT open-
collector output is triggered active LOW to report a
desaturation error. The gate driver output is muted for
minimum of 20 µs. All input LED signals are ignored
during the mute period to allow the driver to completely
soft shutdown the IGBT. The fault mechanism is reset
automatically after the tDESAT(MUTE) (see Figure 56).
During OFF state of the IGBT, or if VO is LOW, the fault
sense circuitry is disabled to prevent false fault signals.
The DESAT comparator should be disabled for a short
period (blanking time) before the IGBT turns on to allow
the collector voltage to fall below the DESAT threshold.
This blanking period protects against false triggering of
the DESAT while the IGBT is turning on. The blanking
time is controlled by the internal DESAT charge current,
the DESAT voltage threshold, and the external DESAT
capacitor (capacitor between DESAT and VE pin). The
nominal blanking time can be calculated using external
capacitance (CBLANK), FAULT threshold voltage
(VDESAT), and DESAT charge current (ICHG):
tBLANK = CBLANK x VDESAT / ICHG (2)
With a recommended 100 pF DESAT capacitor, the
nominal blanking time is:
100 pF x 6.5 V / 250 µA = 2.6 µs
4. Soft Turn-Off
The soft turn-off feature ensures the safe shutdown of
the IGBT under fault condition. The gate-driver voltage
VO turns off the IGBT in a controlled slow manner. This
reduces the voltage spike on the collector of the IGBT.
Without this, the IGBT would see a heavy spike on the
collector, resulting in a permanent damage to the device
when it’s turned off immediately. The VO is pulled to
LOW slowly in 4 µs.
5. Under-Voltage Lockout (UVLO)
Under-Voltage detection prevents the application of
insufficient gate voltage to the IGBT. This could be
dangerous, as it would drive the IGBT out of saturation
and into the linear operation where losses are very high
and the IGBT quickly overheats. This feature ensures
proper operation of the IGBTs. The output voltage, VO,
remains LOW irregardless of the inputs, as long as the
supply voltage, VDD – VE, is less than VUVLO+ during
power up. When the supply voltage falls below VUVLO- ,
VO goes LOW, as illustrated in Figure 57.
6. Active Miller Clamp Function
An active Miller clamp feature allows the sinking of the
Miller current to ground during a high-dV/dt situation.
Instead of driving the IGBT gate to a negative supply
voltage to increase the safety margin, the device has a
dedicated VCLAMP pin to control the Miller current.
During turn-off, the gate voltage of the IGBT is monitored
and the VCLAMP output is activated when the gate
voltage goes below 2 V (relative to VSS).
The Miller clamp NMOS transistor is then turned on and
provides a low resistive path for the Miller current, which
helps prevent a self-turn-on due to the parasitic Miller
capacitor in power switches. The clamp voltage is VSS +
2.5 V, typical for a Miller current up to 1100 mA.
In this way, the VCLAMP function does not affect the turn-
off characteristic. It helps to clamp the gate to the low
level throughout the turn-off time. During turn-on, where
the input of the driver is activated, the VCLAMP function is
disabled or opened.
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 28
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Figure 57. Time to Good Power
7. Time to Good Power
During fast power up (e.g. bootstrap power supply), the
LED is off and the output of the gate driver should be in
the LOW or OFF state. Sometimes, race conditions exist
that cause the output to follow VDD until all of the circuits
in the output IC stabilize. This condition can result in
output transitions or transients that are coupled to the
driven IGBT. These glitches can cause the high- and
low-side IGBTs to conduct shoot-through current that
can damage the power semiconductor devices.
Fairchild has introduced a initial turn-on delay, called
“time to good power.” This delay, typically 2 µs, is only
present during the initial power-up of the device. If the
LED is ON during the initial turn-on activation, low-to-
high transition at the output of the gate driver only occurs
2 µs after the VDD power is applied.
8. Dual Supply Operation – Negative Bias at VSS
The IGBT’s off-state noise immunity can be enhanced by
providing a negative gate-to-emitter bias when the IGBT
is in OFF state. This static off-state bias can be supplied
by connecting a separate negative voltage source
between the VE (pin 16) and VSS (pin 9 and pin 12). The
primary ground reference is the IGBT’s emitter
connection, VE (pin 16). The under-voltage lockout
threshold and desaturation voltage detection are
referenced to the IGBT’s emitter (VE) ground.
The negative voltage supply at VSS appears at the gate
drive output, VO, when in LOW state. When the input
drives the output HIGH, the output voltage, VO, has the
potential of the VDD and VSS. Proper power supply
bypass capacitors are added to provide paths for the
instantaneous gate charging and discharging currents.
The Schottky diode is recommended connected
between VE and VSS to protect against a reverse voltage
greater than 0.5 V. The VCLAMP (pin 10) should be
connected to VSS when not in use.
9. DESAT Pin Protection
During turn off, especially with inductive load, a large
instantaneous forward-voltage transient can appear on
the freewheeling diode of the IGBT. A large negative
voltage spike on the DESAT pin can result and draw
substantial current out of the gate driver IC if there is not
current-limiting resistor. To limit this current, a 100 Ω to
1 kΩ resistor should be inserted in series with the
DESAT diode. The added resistance does not change
the DESAT threshold or the DESAT blanking time.
The DESAT diode protects the gate driver IC from high
voltages when the IGBT is turning off, while allowing a
forward ICHG current of 250 µA to be conducted to sense
the IGBT’s saturated collector to emitter voltage when
the IGBT is turned on. A fast-recovery diode, trr below
75 ns, with sufficient reverse-voltage rating, should be
used. Fairchild offers many of these ultra-fast diodes/
rectifiers, such as ES1J-600V, with trr at 35 ns.
If two diodes or more are used, the required maximum
reverse voltage can be reduced by half or accordingly.
This modifies the trigger level for a fault condition. The
sum of the DESAT diode forward-voltage and the IGBT
collector-emitter VCE voltage form the voltage at the
DESAT pin. The trigger level for a fault condition given by:
VCE@FAULT = VDESAT – n x VF (3)
where n is the number of the DESAT diodes.
10. Pull-Up Resistor on FAULT Pin
The FAULT pin is an open-collector output and can be
connected as wire-OR operation with other types of
protection (e.g., over-temperature, over-voltage, over-
current) to alert the microcontroller. Being an open-
collector output, it requires a pull-up resistor to provide a
normal high output voltage level. This resistor value
must be properly considered based on various IC
interface requirements. The sinking current capability is
given by IFAULTL.
VO
VDD – VE
VUVLO+
VUVLO
–
IF
IFLH
tGP
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 29
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
11. Increasing the Output Drive Current Using an
External Booster Stage
If larger gate drive capability is needed for large IGBT
modules or parallel operation, an output booster stage
may be added to driver for optimum performance.
A possible implementation is by a discrete NPN/PNP
totem-pole configuration. These booster transistors
should be fast switching and have sufficient current gain
to deliver the desired peak output current.
Figure 58. Output Booster Stage for Increased Output Drive Current
16
15
14
13
12
11
10
9
VE
VLED2+
DESAT
VDD
VSS
VO
VCLAMP
VSS
FOD8333
RG
CBLANK
0.1µF
DDESAT
0.1µF
100Ω
–
+
–
+
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 30
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Ordering Information
All packages are lead free per JEDEC: J-STD-020B standard.
Marking Information
Part Number Package Packing Method
FOD8333 SO 16-Pin Tube (50 units per tube)
FOD8333R2 SO 16-Pin Tape and Reel (750 units per reel)
FOD8333V SO 16-Pin, DIN EN/IEC 60747-5-5 Option Tube (50 units per tube)
FOD8333R2V SO 16-Pin, DIN EN/IEC 60747-5-5 Option Tape and Reel (750 units per reel)
1
2
8
4
3
5
Definitions
1 Fairchild logo
2 Device number, e.g., ‘8333’ for FOD8333
3 DIN EN/IEC60747-5-5 Option (only appears on component
ordered with this option) (pending approval)
4 Plant code, e.g., ‘D’
5 Alphabetical year code, e.g., ‘E’ for 2014
6 Two-digit work week ranging from ‘01’ to ‘53’
7 Lot traceability code
8 Package assembly code, e.g., ‘J’
8333
D X YYKK
V
67
J
©2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD8333 Rev. 1.0.3 31
FOD8333 — Input LED Drive, 2.5 A Output Current, IGBT Drive Optocoupler with Desaturation Detection, Isolated Fault Sensing,
Active Miller Clamp, and Automatic Fault Reset
Reflow Profile
Figure 59. Relow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Minimum (Tsmin) 150°C
Temperature Maximum (Tsmax) 200°C
Time (tS) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (tL to tP) 3°C/second maximum
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-Down Rate (TP to TL) 6°C/second maximum
Time 25°C to Peak Temperature 8 minutes maximum
Time (seconds)
Temperature (°C)
Time 25 °C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-Up Rate = 3 °C/s
Max. Ramp-Down Rate = 6 °C/s
240 360
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING REFERS TO JEDEC MS-013,
VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH AND TIE BAR
PROTRUSIONS
D) DRAWING CONFORMS TO ASME
Y14.5M-1994
E) LAND PATTERN STANDARD:
SOIC127P1030X275-16N
F) DRAWING FILE NAME: MKT-M16FREV2
SCALE: 3:1
7.50
10.30
PIN ONE
INDICATOR
A
(1.42)
0.25
0.25
0.19
1.27
0.40
1 8
16 9
11.63
A
B
C
0.20 C A-B
2X
18
16 9
3.75
0.10 C D
2X
1.27
0.51
0.31
(16X)
0.25 C A-B D
10.30
D
0.64 TYP1.27 TYP
3.0 MAX
0.30±0.15
0.10 C
SEATING PLANE
0.10 C
16X
GAUGE
PLANE
SEATING
PLANE
C
(2.16)
(R0.17)
8°
0°
0.51 TYP
0.33 C
2X 8 TIPS
(R0.17)
9.47
7.31
2.35±0.10
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