NPA1003QA - M/A-COM Technology Solutions

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Features

 GaN on Si HEMT D-Mode Amplifier

 Suitable for linear and saturated applications

 Broadband operation from 20 - 1500 MHz

 28 V Operation

 16 dB Gain @ 1 GHz

 42% PAE @ 1 GHz

 100% RF Tested

 50 Ω Input / Output Matched

 Lead-Free 4 mm 16-lead QFN plastic Package

 RoHS* Compliant and 260°C Reflow Compatible

Description

The NPA1003QA is a wideband GaN power

amplifier optimized for 20 - 1500 MHz operation.

This amplifier has been designed for saturated and

linear operation with output levels to 5 W (37 dBm)

assembled in a lead-free 4 mm 16-lead QFN plastic

package.

The NPA1003QA is ideally suited for broadband

general purpose, test and measurement, defense

communications, land mobile radio and wireless

infrastructure.

Ordering Information

*Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.

Part Number Package

NPA1003QA Bulk

NPA1003QA-SMBPPR sample

Functional Schematic

Pin No. Pin Name Function

1 N/C No Connection

2 RFIN / VG RF Input / Gate Voltage

3 RFIN / VG RF Input / Gate Voltage

4 N/C No Connection

5-8 N/C No Connection

9 N/C No Connection

10 RFOUT / VD RF Output / Drain Voltage

11 RFOUT / VD RF Output / Drain Voltage

12 N/C No Connection

13-16 N/C No Connection

17 Paddle2 Ground

Pin Designations1,2

1. All no connection pins may be left floating or grounded.

2. The exposed pad centered on the package bottom must be

connected to RF and DC ground. This path must also provide

a low thermal resistance heat path.

RFOUT / VD

N/C

RFIN / VG

N/C

N/C N/C

Paddle

567 8

16 15 14 13

N/C N/C N/C N/C

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC Electrical Specifications: TC = +25°C

RF Electrical Specifications: TC = +25°C , VDS = 28 V, IDQ = 100 mA

Parameter Test Conditions Symbol Min. Typ. Max. Units

Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK — — 2 mA

Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK — — 1 mA

Gate Threshold Voltage VDS = 28 V, ID = 2 mA VT -2.5 -1.5 -0.5 V

Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V

On Resistance VDS = 2 V, ID = 15 mA RON — 1.6 — Ω

Maximum Drain Current VDS = 7 V pulsed, pulse width 300 µs ID, MAX. — 1.5 — A

Parameter Test Conditions Symbol Min. Typ. Max. Units

Small Signal Gain CW, 1000 MHz GSS — 18 — dB

Saturated Output Power CW, 1000 MHz PSAT — 38.5 — dBm

Drain Efficiency at Saturation CW, 1000 MHz ηSAT — 50 — %

Noise Figure CW, 1000 MHz NF — 2.0 — dB

Power Gain CW, 1000 MHz, POUT = 5 W GP 14 16 — %

Power Added Efficiency CW, 1000 MHz, POUT = 5 W PAE 38 42 — %

Ruggedness All phase angles  VSWR=10:1, No Device Damage

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Absolute Maximum Ratings3,4,5

3. Exceeding any one or combination of these limits may cause permanent damage to this device.

4. MACOM does not recommend sustained operation near these survivability limits.

5. Operating at nominal conditions with TJ ≤ 180°C will ensure MTTF > 1 x 106 hours.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Nitride Circuits are sensitive to electrostatic

discharge (ESD) and can be damaged by static

electricity. Proper ESD control techniques should

be used when handling these HBM Class 1A

devices.

Parameter Absolute Maximum

Drain Source Voltage, VDS 100 V

Gate Source Voltage, VGS -10 to 3 V

Gate Current, IG 4 mA

Junction Temperature, TJ +200°C

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +150°C

6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple

embedded in heat-sink.

Parameter Test Conditions Symbol Typical Units

Thermal Resistance VDS = 28 V, TJ = 180 °C RJC 12 °C/W

Thermal Characteristics6

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Parts measured on evaluation board (20-mil thick

RO4350). The PCB’s electrical and thermal

ground is provided using a standard-plated densely

packed via hole array (see recommended via

pattern).

Matching is provided using a combination of

lumped elements and transmission lines as shown

in the simplified schematic above. Recommended

tuning solution component placement, transmission

lines, and details are shown on the next page.

Description

Turning the device ON

1. Set VGS to the pinch-off (VP), typically -5 V.

2. Turn on VDS to nominal voltage (28 V).

3. Increase VGS until the IDS current is reached.

4. Apply RF power to desired level.

Turning the device OFF

1. Turn the RF power off.

2. Decrease VGS down to VP.

3. Decrease VDS down to 0 V.

4. Turn off VGS.

Bias Sequencing

Recommended Via Pattern (All dimensions shown as inches)

Evaluation Board and Recommended Tuning Solution

20-1500 MHz Broadband Circuit

0.9 mH

10 mF

VGS VDS

NPA1003

4.7 mF

0.9 mH

0.01 mF

2400 pF

RFOUT

49.9 W

0 W

2400 pF

RFIN

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Reference Value Tolerance Manufacturer Part Number

C1 10 µF 20% TDK C2012X5R1C106M085AC

C2 0.01 µF 5% AVX 06031C103JAT2A

C3 4.7 µF 10% TDK C5750X7R2A475K230KA

C4, C5 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0

R1 49.9 Ω 1% Panasonic ERJ-6ENF49R9V

R2 0 Ω - Panasonic ERJ-3GEY0R00V

L1, L2 0.9 µH 10% Coilcraft 1008AF-901XJLC

PCB Rogers RO4350, r=3.5, 0.020”

Parts list

Evaluation Board and Recommended Tuning Solution

20-1500 MHz Broadband Circuit

20 MIL RO4350 QFN– 4 mm

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Small Signal s-Parameters vs. Frequency

Power Added Efficiency vs. Frequency

Performance vs. Frequency at POUT = 37 dBm

Gain vs. Frequency

Typical Performance as measured in the broadband evaluation board:

CW, VDS = 28 V, IDQ = 100 mA (unless noted)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

POUT = 27dBm

POUT = 36dBm

POUT = 37dBm

Gain (dB)

Frequency (GHz)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

POUT = 27dBm

POUT = 36dBm

POUT = 37dBm

Power Added Efficiency (%)

Frequency (GHz)

Power Added Efficiency vs. Frequency

at POUT = 37 dBm

-35

-30

-25

-20

-15

-10

-5

0 500 1,000 1,500 2,000

s21

s11

s22

s21 (dB)

s11, s22 (dB)

Frequency (MHz)

Gain vs. Frequency

at POUT = 37 dBm

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Gain

PAE

Gain (dB)

Power Added Efficiency (%)

Frequency (GHz)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

+25°C

-40°C

+85°C

Power Added Efficiency (%)

Frequency (GHz)

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

+25°C

-40°C

+85°C

Gain (dB)

Frequency (GHz)

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Power Added Efficiency vs. Output Power

Input Return Loss vs. Output Power

Gain vs. Output Power

Input Return Loss vs. Frequency at POUT = 37 dBm

Typical Performance as measured in the broadband evaluation board:

CW, VDS = 28 V, IDQ = 100 mA (unless noted)

-12

-10

-8

-6

-4

-2

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

+25°C

-40°C

+85°C

Input Return Loss (dB)

Frequency (GHz)

10 15 20 25 30 35 40

100MHz

500MHz

900MHz

1.5GHz

Gain (dB)

POUT (dBm)

10 15 20 25 30 35 40

100MHz

500MHz

900MHz

1.5GHz

Power Added Efficiency (%)

POUT (dBm)

-18

-16

-14

-12

-10

-8

-6

-4

-2

10 15 20 25 30 35 40

100MHz

500MHz

900MHz

1.5GHz

Input Return Loss (dB)

POUT (dBm)

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Gain vs. Output Power

at freq = 900 MHz

Power Added Efficiency vs. Output Power

at freq = 900 MHz

Quiescent VGS vs. Temperature

Typical Performance as measured in the broadband evaluation board:

CW, VDS = 28 V, IDQ = 100 mA (unless noted)

-1.6

-1.5

-1.4

-1.3

-1.2

-1.1

-1.0

-50 -25 0 25 50 75 100

50mA

100mA

150mA

VGSQ (V)

Temperature (oC)

10 15 20 25 30 35 40

VDS = 15V

VDS = 20V

VDS = 28V

Gain (dB)

POUT (dBm)

10 15 20 25 30 35 40

VDS = 15V

VDS = 20V

VDS = 28V

Power Added Efficiency (%)

POUT (dBm)

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Typical 2-Tone Performance as measured in the broadband evaluation board:

1 MHz Tone Spacing, f = 500 MHz, VDS = 28 V, IDQ = 100 mA (unless noted)

2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current

2-Tone IMD vs. Tone Spacing

at POUT = 6 W-PEP, IDQ=6 mA

-50

-45

-40

-35

-30

-25

-20

0.01 0.1 1 10

25mA

50mA

100mA

150mA

IMD (dBc)

POUT (W-PEP)

0.01 0.1 1 10

25mA

50mA

100mA

150mA

Gain (dB)

POUT (W-PEP)

-55

-50

-45

-40

-35

-30

-25

-20

0.1 1 10

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

IMD (dBc)

POUT (W-PEP)

-50

-45

-40

-35

-30

-25

-20

-15

0.1 1 10 100

-IMD3

+IMD3

-IMD5

+IMD5

-IMD7

+IMD7

IMD (dBc)

Tone Spacing (MHz)

2-Tone IMD vs. Output Power

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

† Meets JEDEC moisture sensitivity level 3 requirements.

Plating is 100% matte tin over copper.

Lead-Free 4 mm QFN 16-lead plastic package

All dimensions shown as inches [mm].

GaN Wideband Power Amplifier, 28 V, 5 W

20 - 1500 MHz

Rev. V1

NPA1003QA

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM")

products. These materials are provided by MACOM as a service to its customers and may be used for

informational purposes only. Except as provided in MACOM's Terms and Conditions of Sale for such products or

in any separate agreement related to this document, MACOM assumes no liability whatsoever. MACOM

assumes no responsibility for errors or omissions in these materials. MACOM may make changes to

specifications and product descriptions at any time, without notice. MACOM makes no commitment to update

the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future

changes to its specifications and product descriptions. No license, express or implied, by estoppels or otherwise,

to any intellectual property rights is granted by this document.

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IMPLIED, RELATING TO SALE AND/OR USE OF MACOM PRODUCTS INCLUDING LIABILITY OR

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WHICH MAY RESULT FROM THE USE OF THESE MATERIALS.

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