NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Features Functional Schematic GaN on Si HEMT D-Mode Amplifier Suitable for linear and saturated applications Broadband operation from 20 - 1500 MHz 28 V Operation 16 dB Gain @ 1 GHz 42% PAE @ 1 GHz 100% RF Tested 50 Input / Output Matched Lead-Free 4 mm 16-lead QFN plastic Package RoHS* Compliant and 260C Reflow Compatible N/C N/C N/C N/C 16 15 14 13 N/C 1 12 N/C RFIN / VG 2 11 RFOUT / VD RFIN / VG 3 10 RFOUT / VD 6 Rev. V1 17 Description N/C The NPA1003QA is a wideband GaN power amplifier optimized for 20 - 1500 MHz operation. This amplifier has been designed for saturated and linear operation with output levels to 5 W (37 dBm) assembled in a lead-free 4 mm 16-lead QFN plastic package. Paddle 4 9 5 6 7 8 N/C N/C N/C N/C N/C Pin Designations1,2 Pin No. Pin Name Function 1 N/C No Connection 2 RFIN / VG RF Input / Gate Voltage 3 RFIN / VG RF Input / Gate Voltage 4 N/C No Connection 5-8 N/C No Connection 9 N/C No Connection The NPA1003QA is ideally suited for broadband general purpose, test and measurement, defense communications, land mobile radio and wireless infrastructure. Ordering Information 10 RFOUT / VD RF Output / Drain Voltage Part Number Package 11 RFOUT / VD RF Output / Drain Voltage NPA1003QA Bulk 12 N/C No Connection NPA1003QA-SMBPPR sample 13-16 N/C 17 Paddle No Connection 2 Ground 1. All no connection pins may be left floating or grounded. 2. The exposed pad centered on the package bottom must be connected to RF and DC ground. This path must also provide a low thermal resistance heat path. *Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 RF Electrical Specifications: TC = +25C , VDS = 28 V, IDQ = 100 mA Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 1000 MHz GSS -- 18 -- dB Saturated Output Power CW, 1000 MHz PSAT -- 38.5 -- dBm Drain Efficiency at Saturation CW, 1000 MHz SAT -- 50 -- % Noise Figure CW, 1000 MHz NF -- 2.0 -- dB Power Gain CW, 1000 MHz, POUT = 5 W GP 14 16 -- % Power Added Efficiency CW, 1000 MHz, POUT = 5 W PAE 38 42 -- % Ruggedness All phase angles VSWR=10:1, No Device Damage DC Electrical Specifications: TC = +25C Parameter Test Conditions Symbol Min. Typ. Max. Units Drain-Source Leakage Current VGS = -8 V, VDS = 100 V IDLK -- -- 2 mA Gate-Source Leakage Current VGS = -8 V, VDS = 0 V IGLK -- -- 1 mA Gate Threshold Voltage VDS = 28 V, ID = 2 mA VT -2.5 -1.5 -0.5 V Gate Quiescent Voltage VDS = 28 V, ID = 88 mA VGSQ -2.1 -1.2 -0.3 V On Resistance VDS = 2 V, ID = 15 mA RON -- 1.6 -- Maximum Drain Current VDS = 7 V pulsed, pulse width 300 s ID, MAX. -- 1.5 -- A 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Absolute Maximum Ratings3,4,5 Parameter Absolute Maximum Drain Source Voltage, VDS 100 V Gate Source Voltage, VGS -10 to 3 V Gate Current, IG 4 mA Junction Temperature, TJ +200C Operating Temperature -40C to +85C Storage Temperature -65C to +150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. MACOM does not recommend sustained operation near these survivability limits. 5. Operating at nominal conditions with TJ 180C will ensure MTTF > 1 x 106 hours. Thermal Characteristics6 Parameter Test Conditions Symbol Typical Units Thermal Resistance VDS = 28 V, TJ = 180 C RJC 12 C/W 6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple embedded in heat-sink. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Nitride Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM Class 1A devices. 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Evaluation Board and Recommended Tuning Solution 20-1500 MHz Broadband Circuit VGS VDS C1 10 mF R1 49.9 W C2 0.01 mF C3 4.7 mF R2 0W L1 0.9 mH NPA1003 L2 0.9 mH RFIN RFOUT C4 2400 pF C5 2400 pF Description Bias Sequencing Parts measured on evaluation board (20-mil thick RO4350). The PCB's electrical and thermal ground is provided using a standard-plated densely packed via hole array (see recommended via pattern). Turning the device ON Matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. Recommended tuning solution component placement, transmission lines, and details are shown on the next page. 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (28 V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. Recommended Via Pattern (All dimensions shown as inches) 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Evaluation Board and Recommended Tuning Solution 20-1500 MHz Broadband Circuit 20 MIL RO4350 QFN- 4 mm Parts list Reference Value Tolerance Manufacturer Part Number C1 10 F 20% TDK C2012X5R1C106M085AC C2 0.01 F 5% AVX 06031C103JAT2A C3 4.7 F 10% TDK C5750X7R2A475K230KA C4, C5 2400 pF - Dielectric Labs, Inc. C08BL242X-5UN-X0 R1 49.9 1% Panasonic ERJ-6ENF49R9V R2 0 - Panasonic ERJ-3GEY0R00V L1, L2 0.9 H 10% Coilcraft 1008AF-901XJLC PCB Rogers RO4350, r=3.5, 0.020" 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Typical Performance as measured in the broadband evaluation board: CW, VDS = 28 V, IDQ = 100 mA (unless noted) Performance vs. Frequency at POUT = 37 dBm 30 -5 25 -10 20 -15 15 -20 10 s11 0 500 1,000 20 60 15 50 10 40 -30 s22 0 70 Gain PAE -25 s21 5 25 Gain (dB) 0 5 -35 2,000 1,500 0 0.2 0.4 Frequency (MHz) Gain vs. Frequency Power Added Efficiency (%) Gain (dB) 30 1.6 60 20 15 POUT = 27dBm POUT = 36dBm POUT = 37dBm 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 50 40 30 20 10 0.0 1.6 POUT = 27dBm POUT = 36dBm POUT = 37dBm 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Frequency (GHz) Frequency (GHz) Gain vs. Frequency at POUT = 37 dBm Power Added Efficiency vs. Frequency at POUT = 37 dBm 25 60 Power Added Efficiency (%) +25C -40C +85C 20 Gain (dB) 1.4 Power Added Efficiency vs. Frequency 25 15 10 0.0 6 0.6 0.8 1 1.2 Frequency (GHz) 0.2 0.4 0.6 0.8 1.0 Frequency (GHz) 1.2 1.4 1.6 +25C -40C +85C 50 40 30 20 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Frequency (GHz) M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 1.6 Power Added Efficiency (%) 35 s11, s22 (dB) s21 (dB) Small Signal s-Parameters vs. Frequency NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Typical Performance as measured in the broadband evaluation board: CW, VDS = 28 V, IDQ = 100 mA (unless noted) Input Return Loss vs. Frequency at POUT = 37 dBm Input Return Loss vs. Output Power -2 -2 -4 -4 +85C Input Return Loss (dB) Input Return Loss (dB) +25C -40C -6 -8 -10 -6 -8 -10 -12 -14 100MHz 500MHz 900MHz 1.5GHz -16 -12 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -18 10 1.6 15 20 Frequency (GHz) Gain vs. Output Power 35 40 Power Added Efficiency (%) 70 20 Gain (dB) 30 Power Added Efficiency vs. Output Power 25 100MHz 500MHz 900MHz 1.5GHz 15 10 10 25 POUT (dBm) 15 20 25 POUT (dBm) 30 35 40 60 50 100MHz 500MHz 900MHz 1.5GHz 40 30 20 10 0 10 15 20 25 30 35 POUT (dBm) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 40 NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Typical Performance as measured in the broadband evaluation board: CW, VDS = 28 V, IDQ = 100 mA (unless noted) Power Added Efficiency vs. Output Power at freq = 900 MHz Gain vs. Output Power at freq = 900 MHz 60 Power Added Efficiency (%) 25 Gain (dB) 20 15 VDS = 15V VDS = 20V VDS = 28V 10 10 15 20 25 30 35 50 VDS = 15V VDS = 20V VDS = 28V 40 30 20 10 0 10 40 15 20 25 30 35 POUT (dBm) POUT (dBm) Quiescent VGS vs. Temperature -1.0 -1.1 50mA 100mA 150mA VGSQ (V) -1.2 -1.3 -1.4 -1.5 -1.6 -50 -25 0 25 50 75 100 o Temperature ( C) 8 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 40 NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Typical 2-Tone Performance as measured in the broadband evaluation board: 1 MHz Tone Spacing, f = 500 MHz, VDS = 28 V, IDQ = 100 mA (unless noted) 2-Tone IMD3 vs. Output Power vs. Quiescent Current 2-Tone Gain vs. Output Power vs. Quiescent Current -20 25 25mA 50mA 100mA 150mA 25mA 50mA 100mA 150mA -25 20 Gain (dB) IMD (dBc) -30 -35 -40 15 -45 -50 0.01 0.1 1 10 0.01 10 0.1 POUT (W-PEP) 10 10 100 2-Tone IMD vs. Tone Spacing at POUT = 6 W-PEP, IDQ=6 mA 2-Tone IMD vs. Output Power -20 -15 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -25 -30 -20 -25 -35 IMD (dBc) IMD (dBc) 1 POUT (W-PEP) -40 -30 -35 -45 -40 -50 -45 -55 0.1 1 POUT (W-PEP) 10 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -50 0.1 1 Tone Spacing (MHz) 9 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 Lead-Free 4 mm QFN 16-lead plastic package All dimensions shown as inches [mm]. Meets JEDEC moisture sensitivity level 3 requirements. Plating is 100% matte tin over copper. 10 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support NPA1003QA GaN Wideband Power Amplifier, 28 V, 5 W 20 - 1500 MHz Rev. V1 M/A-COM Technology Solutions Inc. All rights reserved. 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