SST32HF64A2-70-4E-L2SE - Silicon Storage Technology

S71299-04-EOL 3/09

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF+ and ComboMemory are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

EOL Data Sheet

FEATURES:

• ComboMemories organized as:

– SST32HF64A2: 4M x16 Flash + 1024K x16 PSRAM

• Single 2.7-3.3V Read and Write Operations

• Concurrent Operation

– Read from or Write to PSRAM while

Erase/Program Flash

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption:

– Active Current: 15 mA (typical) for

Flash or PSRAM Read

– Standby Current: 60 µA (typical)

• Flexible Erase Capability

– Uniform 2 KWord sectors

– Uniform 32 KWord size blocks

• Erase-Suspend/Erase-Resume Capabilities

• Security-ID Feature

– SST: 128 bits; User: 128 bits

• Fast Read Access Times:

– Flash: 70 ns

– PSRAM: 70 ns

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST32HF64A2

• Latched Address and Data for Flash

• Flash Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

• Flash Automatic Erase and Program Timing

– Internal VPP Generation

• Flash End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard Command Set

• Package Available

– 56-ball LFBGA (8mm x 10mm x 1.4mm)

– 64-ball LFBGA (8mm x 10mm x 1.4mm)

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST32HF64A2 ComboMemory device integrates a

CMOS flash memory bank with a CMOS PseudoSRAM

(PSRAM) memory bank in a Multi-Chip Package (MCP),

manufactured with SST proprietary, high-performance

SuperFlash technology.

Featuring high-performance Word-Program, the flash

memory bank provides a maximum Word-Program time of

7 µsec. To protect against inadvertent flash write, the

SST32HF64A2 device contains on-chip hardware and soft-

ware data protection schemes. The SST32HF64A2 device

offers a guaranteed endurance of 10,000 cycles, and data

retention greater than 100 years.

The SST32HF64A2 device consists of two independent

memory banks, each with enable signals. The flash and

PSRAM memory banks are superimposed in the same

memory address space, and both banks share common

address lines, data lines, WE# and OE#. The memory

bank is selected using the memory bank enable signals.

The PSRAM bank enable signal, BES1#, selects the

PSRAM bank. The flash memory bank enable signal,

BEF#, selects the flash memory bank. The WE# signal is

used with the Software Data Protection (SDP) command

sequence when controlling the Erase and Program opera-

tions in the flash memory bank. The SDP command

sequence protects the data stored in the flash memory

bank from accidental alteration.

The SST32HF64A2 provides the added functionality of

being able to simultaneously read from, or write to, the

PSRAM bank while erasing or programming in the flash

memory bank. The PSRAM memory bank can be read or

written while the flash memory bank performs Sector-

Erase, Bank-Erase, or Word-Program concurrently. All

flash memory Erase and Program operations will automati-

cally latch the input address and data signals and complete

the operation in background without further input stimulus

required. Once the internally controlled Erase or Program

cycle in the flash bank commences, the PSRAM bank can

be accessed for Read or Write.

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

SST32HF64A1 / 64B164Mb Flash + 4Mb SRAM, 32Mb Flash + 8Mb SRAM

(x16) MCP ComboMemories

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

The SST32HF64A2 device is suited for applications that

use both flash memory and PSRAM memory to store code

or data, and is ideal for systems requiring low power and

small form factor. The SST32HF64A2 significantly

improves performance and reliability, while lowering power

consumption, when compared with multiple chip solutions.

The total energy consumed is a function of the applied volt-

age, current, and time of application. Since for any given

voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total

energy consumed during any Erase or Program operation

is less than alternative flash technologies.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

Device Operation

The SST32HF64A2 uses BES1#, BES2 and BEF# to con-

trol operation of either the flash or the PSRAM memory

bank. When BEF# is low, the flash bank is activated for

Read, Program or Erase operation. When BES1# is low

and BES2 is high, the PSRAM is activated for Read and

Write operation. BEF# and BES1# cannot be at low level,

and BES2 cannot be at high level at the same time. If all

bank enable signals are asserted, bus contention will

result and the device may suffer permanent damage.

All address, data, and control lines are shared by flash and

PSRAM memory banks which minimizes power consump-

tion and loading. The device goes into standby when BEF#

and BES1# bank enables are raised to VIHC (Logic High) or

when BEF# is high and BES2 is low.

Concurrent Read/Write Operation

The SST32HF64A2 provides the unique benefit of being

able to read from or write to PSRAM, while simultaneously

erasing or programming the flash. This allows data alter-

ation code to be executed from PSRAM, while altering the

data in flash. See Figure 29 for a flowchart. The following

table lists all valid states.

The device will ignore all SDP commands when an Erase

or Program operation is in progress. Note that Product

Identification commands use SDP; therefore, these com-

mands will also be ignored while an Erase or Program

operation is in progress.

Flash Read Operation

The Read operation of the SST32HF64A2 is controlled by

BEF# and OE#. Both have to be low, with WE# high, for the

system to obtain data from the outputs. BEF# is used for

flash memory bank selection. When BEF# is high, the chip

is deselected and only standby power is consumed. OE# is

the output control and is used to gate data from the output

pins. The data bus is in high impedance state when OE# is

high. Refer to Figure 7 for further details.

Flash Word-Program Operation

The flash memory bank of the SST32HF64A2 is pro-

grammed on a word-by-word basis. Before Program opera-

tions, the memory must be erased first. The Program

operation consists of three steps.

1. Load the three-byte sequence for Software Data

Protection.

2. Load word address and word data. During the

Word-Program operation, the addresses are

latched on the falling edge of either BEF# or WE#,

whichever occurs last. The data is latched on the

rising edge of either BEF# or WE#, whichever

occurs first.

3. Initiate the internal Program operation after the

rising edge of the fourth WE# or BEF#, whichever

occurs first. The Program operation, once initi-

ated, will be completed, within 10 µs. See Figures

8 and 9 for WE# and BEF# controlled Program

operation timing diagrams, and Figure 24 for flow-

charts.

During the Program operation, the only valid flash Read

operations are Data# Polling and Toggle Bit. During the

internal Program operation, the host is free to perform addi-

tional tasks. During the command sequence, WP# should

be statically held high or low. Any SDP commands loaded

during the internal Program operation will be ignored.

Concurrent Read/Write State Table

Flash PSRAM

Program/Erase Read

Program/Erase Write

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

Flash Sector/Block-Erase Operation

The SST32HF64A2 offers both Sector-Erase and Block-

Erase operations. The Flash Sector/Block-Erase operation

erases the device on a sector-by-sector (or block-by-block)

basis. The sector architecture is based on uniform sector

size of 2 KWord. The Block-Erase mode is based on uni-

form block size of 32 KWord.

Initiate the Sector-Erase operation by executing a six-byte

command sequence with Sector-Erase command (50H)

and sector address (SA) in the last bus cycle. The address

lines AMS-A11 are used to determine the sector address.

Initiate the Block-Erase operation by executing a six-byte

command sequence with Block-Erase command (30H)

and block address (BA) in the last bus cycle. The address

lines AMS-A15 are used to determine the block address.

The sector or block address is latched on the falling edge of

the sixth WE# pulse, while the command (30H or 50H) is

latched on the rising edge of the sixth WE# pulse.

Erase operations begin after the sixth WE# pulse. The

End-of-Erase operation can be determined using either

Data# Polling or Toggle Bit methods. See Figures 13 and

14 for timing waveforms. Any commands issued during the

Sector- or Block-Erase operation are ignored, WP# should

be statically held high or low.

Erase-Suspend/Erase-Resume Commands

The Erase-Suspend operation temporarily suspends a

Sector- or Block-Erase operation allowing data to be read

from any memory location, or programed to any sector/

block that is not suspended for an Erase operation. Exe-

cute the operation by issuing a one byte command

sequence with Erase-Suspend command (B0H). The

device automatically enters read mode typically within 20

µs after the Erase-Suspend command had been issued.

Valid data can be read from any sector or block that is not

suspended from an Erase operation. Reading at address

location within erase-suspended sectors/blocks will output

DQ2 toggling and DQ6 at ‘1’. While in Erase-Suspend

mode, a Word-Program operation is allowed except for the

sector or block selected for Erase-Suspend.

To resume the Sector-Erase or Block-Erase operation

which has been suspended, the system must issue the

Erase Resume command. Execute the operation by issu-

ing a one byte command sequence with Erase-Resume

command (30H) at any address in the last Byte sequence.

Flash Chip-Erase Operation

The SST32HF64A2 provides a Chip-Erase operation,

which allows the user to erase the entire memory array to

the ‘1’ state. This is useful when the entire device must be

quickly erased.

Initiate the Chip-Erase operation executing a six- byte com-

mand sequence with Chip-Erase command (10H) at

address 555H in the last byte sequence. The Erase opera-

tion begins with the rising edge of the sixth WE# or BEF#,

whichever occurs first. During the Erase operation, the only

valid read is Toggle Bit or Data# Polling. See Table 6 for the

command sequence, Figure 11 for timing diagram, and

Figure 28 for the flowchart. Any commands issued during

the Chip-Erase operation are ignored.

Write Operation Status Detection

The SST32HF64A2 provides two software means to detect

the completion of a write (Program or Erase) cycle, in order

to optimize the system Write cycle time. The software

detection includes two status bits: Data# Polling (DQ7) and

To ggle Bit (DQ6). The End-of-Write detection mode is

enabled after the rising edge of WE#, which initiates the

internal Program or Erase operation.

The actual completion of the nonvolatile write is asynchro-

nous with the system; therefore, either a Data# Polling or

Toggle Bit read may be simultaneous with the completion

of the Write cycle. If this occurs, the system may get an

erroneous result, i.e., valid data may appear to conflict with

either DQ7 or DQ6. To prevent spurious rejection, in the

event of an erroneous result, the software routine must

include a loop to read the accessed location an additional

two (2) times. If both reads are valid, then the device has

completed the Write cycle, otherwise the rejection is valid.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

Flash Data# Polling (DQ7)

When the SST32HF64A2 flash memory banks are in the

internal Program operation, any attempt to read DQ7 will

produce the complement of the true data. Once the Pro-

gram operation is complete, DQ7 will produce true data.

However, even though DQ7 may have valid data immedi-

ately following the completion of an internal Write opera-

tion, the remaining data outputs may still be invalid. Valid

data on the entire data bus will appear in subsequent suc-

cessive Read cycles after an interval of 1 µs.

During internal Erase operation, any attempt to read DQ7

will produce a ‘0’. Once the internal Erase operation is

complete, DQ7 will produce a ‘1’. The Data# Polling is valid

after the rising edge of the fourth WE# (or BEF#) pulse for

Program operation. For Sector- or Block-Erase, the Data#

Polling is valid after the rising edge of the sixth WE# (or

BEF#) pulse. See Figure 10 for Data# Polling timing dia-

gram and Figure 25 for a flowchart.

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 bit will alternate between ‘1’

and ‘0’. When the internal Program or Erase operation is

complete, the DQ6 bit will stop toggling. The device is then

ready for the next operation.

For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6) is

valid after the rising edge of sixth WE# (or BEF#) pulse.

DQ6 will be set to ‘1’ if a Read operation is attempted on an

Erase-Suspended Sector/Block. If a Program operation is

initiated in a sector/block not selected in Erase-Suspend

mode, DQ6 will toggle.

An additional Toggle Bit is available on DQ2, which is used

in conjunction with DQ6 to check whether a particular sec-

tor is being actively erased or erase-suspended. Table 1

shows detailed status bits information. The Toggle Bit

(DQ2) is valid after the rising edge of the last WE# (or

BEF#) pulse of Write operation. See Figure 11 for Toggle

Bit timing diagram and Figure 25 for a flowchart.

Note: DQ7 and DQ2 require a valid address when reading

status information.

Flash Memory Data Protection

The SST32HF64A2 flash memory bank provides both

hardware and software features to protect nonvolatile data

from inadvertent writes.

Flash Hardware Data Protection

Noise/Glitch Protection: A WE# or BEF# pulse of less than

5 ns will not initiate a Write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, BEF# high, or WE#

high will inhibit the flash Write operation. This prevents

inadvertent writes during power-up or power-down.

TABLE 1: Write Operation Status

Status DQ7DQ6DQ2

Normal

Operation

Standard

Program

DQ7# Toggle No Toggle

Standard

Erase

0 Toggle Toggle

Erase-

Suspend

Mode

Read from

Erase-Suspended

Sector/Block

1 1 Toggle

Read from

Non- Erase-Suspended

Sector/Block

Data Data Data

Program DQ7# Toggle N/A

T1.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

Hardware Block Protection

The SST32HF64A2 supports top hardware block protec-

tion, which protects the top 32 KWord block of the device.

The Boot Block address ranges are described in Table 2.

Program and Erase operations are prevented on the 32

KWord when WP# is low. If WP# is left floating, it is inter-

nally held high via a pull-up resistor, and the Boot Block is

unprotected, enabling Program and Erase operations on

that block.

Hardware Reset (RST#)

The RST# pin provides a hardware method of resetting the

device to read array data. When the RST# pin is held low

for at least TRP, any in-progress operation will terminate and

return to Read mode. When no internal Program/Erase

operation is in progress, a minimum period of TRHR is

required after RST# is driven high before a valid Read can

take place (see Figure 19).

The Erase or Program operation that has been interrupted

needs to be reinitiated after the device resumes normal

operation mode to ensure data integrity.

Flash Software Data Protection (SDP)

The SST32HF64A2 provides the JEDEC approved soft-

ware data protection scheme for all flash memory bank

data-alteration operations, i.e., Program and Erase. Any

Program operation requires a three-byte sequence series.

Using the three byte-load sequence to initiate the Program

operation, provides optimal protection from inadvertent

Write operations, e.g., during the system power-up or

power-down. Any Erase operation requires a six-byte load

sequence.

The SST32HF64A2 devices are shipped with the software

data protection permanently enabled. See Table 6 for the

specific software command codes. During SDP command

sequence, invalid commands will abort the device to Read

mode, within TRC. The contents of DQ15-DQ8 can be VIL or

VIH, but no other value, during any SDP command

sequence.

Common Flash Memory Interface (CFI)

The SST32HF64A2 contains the CFI information which

describes the characteristics of the device. In order to enter

the CFI Query mode, the system must write a three-byte

sequence, the same as the product ID entry command,

with 98H (CFI Query command) to address 555H in the

last byte sequence. Once the device enters the CFI Query

mode, the system reads the CFI data at the addresses

given in Tables 7 through 9. The system must write the CFI

Exit command to return to Read mode from the CFI Query

mode.

TABLE 2: Boot Block Address Ranges

Product Address Range

Top Boot Block

SST32HF64A2 3F8000H-3FFFFFH

T2.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

Product Identification

The Product Identification mode identifies the device as the

SST32HF64A2 and manufacturer as SST. This mode is

accessed by software operations only. The hardware

device ID Read operation, which is typically used by

programmers, cannot be used on this device because

of the shared lines between flash and PSRAM in the

multi-chip package. Therefore, application of high volt-

age to pin A9 may damage this device.

Use the software Product Identification operation to identify

the part (i.e., using the device ID) when using multiple man-

ufacturers in the same socket. For details, see Tables 5 and

6 for software operation, Figure 15 for the software ID entry

and read timing diagram and Figure 26 for the ID entry

command sequence flowchart.

Product Identification Mode Exit/

CFI Mode Exit

To return to the standard read mode, the Software Product

Identification mode and CFI mode must be exited. Exit by

issuing the Exit ID command sequence which returns the

device to the Read operation. However, the ID Exit/CFI Exit

command is ignored during an internal Program or Erase

operation. This command may also be used to reset the

device to Read mode after any inadvertent transient condi-

tion that apparently causes the device to behave abnor-

mally, e.g. not read correctly. See Table 6 for software

command codes, Figure 16 for timing waveform and Figure

26 for a flowchart.

Security ID

The SST32HF64A2 device offers a 256-bit Security ID

space. The Secure ID space is divided into two 128-bit seg-

ments - one factory programmed segment and one user

programmed segment. The first segment is programmed

and locked at SST with a random 128-bit number. The user

segment is left un-programmed for the customer to pro-

gram as desired.

Use the Security ID Word-Program to program the user

segment of the Security ID. To detect end-of-write for the

SEC ID, read the toggle bits, not Data# Polling. Once this is

complete, the Sec ID is locked using the User Sec ID Pro-

gram Lock-Out. This disables any future corruption of this

space. Regardless of whether or not the Sec ID is locked,

neither Sec ID segment can be erased.

The Secure ID space can be queried by executing a three-

byte command sequence with Enter Sec ID command

(88H) at address 555H in the last byte sequence. To exit

this mode, the Exit Sec ID command should be executed.

Refer to Table 6 for more details.

PSRAM Deep Power-down Mode

The PSRAM Deep Power-down Mode is used to lower the

power consumption of the PSRAM in the SST32HF64A2.

Deep Power-down occurs 1 µs after being enabled by driv-

ing BES2 low. Normal operation occurs 500 µs after driving

BES2 high. In Deep Power-down mode, PSRAM data is

lost. See Figure 23 for the state diagram.

PSRAM Read

The PSRAM Read operation of the SST32HF64A2 is con-

trolled by OE# and BES1#, both have to be low with WE#

and BES2 high for the system to obtain data from the out-

puts. OE# is the output control and is used to gate data

from the output pins. The data bus is in high impedance

state when OE# is high. Refer to the Read cycle timing dia-

gram, Figure 4, for further details.

PSRAM Write

The PSRAM Write operation of the SST32HF64A2 is con-

trolled by WE# and BES1#, both have to be low, BES2

must be high for the system to write to the PSRAM. During

the Word-Write operation, the addresses and data are ref-

erenced to the rising edge of either BES1# or WE#, which-

ever occurs first. The write time is measured from the last

falling edge of BES1# or WE# to the first rising edge of

BES1# or WE#. Refer to the Write cycle timing diagrams,

Figures 5 and 6, for further details.

Design Considerations

SST recommends a high frequency 0.1 µF ceramic capac-

itor to be placed as close as possible between VDD and

VSS, e.g., less than 1 cm away from the VDD pin of the

device. Additionally, a low frequency 4.7 µF electrolytic

capacitor from VDD to VSS should be placed within 1 cm of

the VDD pin.

TABLE 3: Product Identification

Address Data

Manufacturer’s ID 0000H BFH

Device ID

SST32HF64A2 0001H 236CH

T3.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FUNCTIONAL BLOCK DIAGRAM

FIGURE 1: Functional Block Diagram

I/O Buffers

1299 B1.0

Address Buffers

DQ15 - DQ8

AMS-A0WE#1

SuperFlash

Memory

PSRAM

Control Logic

BES1#

BES2

BEF#

OE#1

RESET#

WP#

Address Buffers

& Latches

LBS#

UBS#

DQ7 - DQ0

Note: 1. For LS package only: WE# = WEF# and/or WES#

OE # = OEF# and/or OES#

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

PIN DESCRIPTION

FIGURE 2: Pin Assignments for 64-ball LFBGA (8mm x 10mm)

FIGURE 3: Pin Assignments for 56-ball LFBGA (8mm x 10mm)

1299 64-lfbga L2S P2.0

A20

A16

WEF#

VSSS

WP#

LBS#

A18

A11

RST#

UBS#

A17

A15

A10

A21

A19

OES#

A14

DQ11

A13

DQ15

DQ13

DQ12

DQ9

BEF#

A12

WES#

DQ6

BES2

DQ10

DQ8

VSSF

DQ14

DQ4

VDDS

DQ2

DQ0

OEF#

DQ7

DQ5

VDDF

DQ3

DQ1

BES1#

A B C D E F G H J K

TOP VIEW (balls facing down)

1299 56-lfbga L1P P3.0

A11

WE#

WP#

LBS#

A15

A12

A19

BES2

RST#

UBS#

A21

A13

A20

A18

A14

A10

A17

A16

DQ6

DQ1

VSS

DQ15

DQ13

DQ4

DQ3

DQ9

OE#

BEF#

VSS

DQ7

DQ12

VDDS

VDDF

DQ10

DQ0

BES1#

DQ14

DQ5

DQ11

DQ2

DQ8

A B C D E F G H

TOP VIEW (balls facing down)

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 4: Pin Description

Symbol Pin Name Functions

AMS1 to A0Address Inputs To provide flash address, A21-A0.

AMSS1 to A0Address Inputs To provide PSRAM address, A19-A0

DQ15-DQ0Data Inputs/Outputs To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a flash Erase/Program cycle. The outputs are

in tri-state when OE# is high or BES1# is high or BES2 is low and BEF# is high.

BEF# Flash Memory Bank Enable To activate the Flash memory bank when BEF# is low

BES1# PSRAM Memory Bank Enable To activate the PSRAM memory bank when BES1# is low

BES2 PSRAM Deep

Power-down Enable

To activate the PSRAM memory deep power-down mode when BES2 is VIL

OEF#2Output Enable To gate the data output buffers for Flash only

OES#2Output Enable To gate the data output buffers for PSRAM only

WEF#2Write Enable To control the Write operations for Flash only

WES#2Write Enable To control the Write operations for PSRAM only

OE# Output Enable To gate the data output buffers

WE# Write Enable To control the Write operations

UBS# Upper Byte Control (PSRAM) To enable DQ15-DQ8

LBS# Lower Byte Control (PSRAM) To enable DQ7-DQ0

WP# Write Protect To protect and unprotect sectors from Erase or Program operation

RST# Reset To Reset and return the device to Read mode

VSSF2Ground Flash only2

VSSS2Ground PSRAM only2

VSS Ground

VDDFPower Supply (Flash) 2.7-3.3V Power Supply to Flash only

VDDSPower Supply (PSRAM) 2.7-3.3V Power Supply to PSRAM only

NC No Connection Unconnected pins

T4.0 1299

1. AMS = Most Significant Flash Address

AMSS = Most Significant PSRAM Address

2. For L2S package only

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 5: Operational Modes Selection1

Mode BEF#2BES1#2BES2 OE#3WE#3LBS# UBS# DQ7-0 DQ15-8

Full Standby VIH VIH VIH X X X X HIGH-Z HIGH-Z

PSRAM Deep

Power-down4

VIH VIL VIL X X X X HIGH-Z HIGH-Z

Output Disable VIH VIL VIH VIH VIH X X HIGH-Z HIGH-Z

VIL VIH VIH VIH VIH X X HIGH-Z HIGH-Z

Flash Read VIL VIH VIH VIL VIH XXD

OUT DOUT

Flash Write VIL VIH V

IH V

IH VIL XX D

IN DIN

Flash Erase VIL VIH V

IH VIH VIL XX X X

PSRAM Read VIH V

IL VIH VIL VIH VIL V

IL DOUT DOUT

VIH VIL HIGH-Z DOUT

VIL VIH DOUT HIGH-Z

PSRAM Write VIH VIL VIH XV

IL VIL VIL DIN DIN

VIH VIL HIGH-Z DIN

VIL VIH DIN HIGH-Z

Product

Identification5

VIL VIH V

IH V

IL VIH X X Manufacturer’s ID6

Device ID6

T5.0 1299

1. X can be VIL or VIH, but no other value.

2. For SST32HF64A2, to avoid bus contention do not apply BEF# = VIL and BES1# = VIL at the same time

3. OE# = OEF# and OES#

WE# = WEF# and WES#

4. In PSRAM Deep power-down, PSRAM data is lost.

5. Software mode only

6. With A21-A1 = 0; SST Manufacturer’s ID = 00BFH, is read with A0=0,

SST32HF64A2 Device ID = 236CH, is read with A0=1.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 6: Software Command Sequence

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2

Word-Program 555H AAH 2AAH 55H 555H A0H WA3Data

Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SAX450H

Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX430H

Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Erase-Suspend XXXXH B0H

Erase-Resume XXXXH 30H

Query Sec ID5555H AAH 2AAH 55H 555H 88H

User Security ID

Word-Program

555H AAH 2AAH 55H 555H A5H WA6Data

CFI Query Entry 555H AAH 2AAH 55H 555H 98H

User Security ID

Program Lock-Out

555H AAH 2AAH 55H 555H 85H XXH60000H

Software ID Entry7,8 555H AAH 2AAH 55H 555H 90H

Software ID Exit9,10

/Sec ID Exit/CFI Exit

555H AAH 2AAH 55H 555H F0H

Software ID Exit9,10

/Sec ID Exit/CFI Exit

XXH F0H

T6.0 1299

1. Address format A11-A0 (Hex).

Addresses A12-A21 can be VIL or VIH, but no other value, for Command sequence for SST32HF64A2.

2. DQ15-DQ8 can be VIL or VIH, but no other value, for Command sequence

3. WA = Program Word address

4. SAX for Sector-Erase; uses AMS-A11 address lines

BAX, for Block-Erase; uses AMS-A15 address lines

AMS = Most significant address

AMS = A21 for SST32HF64A2.

5. With AMS-A4 = 0; Sec ID is read with A3-A0,

SST ID is read with A3 = 0 (Address range = 000000H to 000007H),

User ID is read with A3 = 1 (Address range = 000010H to 000017H).

Lock Status is read with A7-A0 = 0000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H.

7. The device does not remain in Software Product ID Mode if powered down.

8. With AMS-A1 =0; SST Manufacturer ID = 00BFH, is read with A0 = 0,

SST32HF64A2 Device ID = 236CH, is read with A0=1.

AMS = Most significant address

AMS = A21 for SST32HF64A2.

9. Both Software ID Exit operations are equivalent

10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1) using the Sec ID

mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are from 000000H-000007H and

000010H-000017H.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 7: CFI Query Identification String1 for SST32HF64A2

Address Data Data

10H 0051H Query Unique ASCII string “QRY”

11H 0052H

12H 0059H

13H 0002H Primary OEM command set

14H 0000H

15H 0000H Address for Primary Extended Table

16H 0000H

17H 0000H Alternate OEM command set (00H = none exists)

18H 0000H

19H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 0000H

T7.0 1299

1. Refer to CFI publication 100 for more details.

TABLE 8: System Interface Information for SST32HF64A2

Address Data Data

1BH 0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 0036H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 0000H VPP min. (00H = no VPP pin)

1EH 0000H VPP max. (00H = no VPP pin)

1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs)

20H 0000H Typical time out for min. size buffer program 2N µs (00H = not supported)

21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms)

23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs)

24H 0000H Maximum time out for buffer program 2N times typical

25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)

T8.0 1299

TABLE 9: Device Geometry Information for SST32HF64A2

Address Data Data

27H 0017H Device size = 2N Bytes (17H = 23; 223 = 8 MByte)

28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface

29H 0000H

2AH 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported)

2BH 0000H

2CH 0002H Number of Erase Sector/Block sizes supported by device

2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size)

2EH 0007H y = 2047 + 1 = 2048 sectors (07FFH = 2047)

2FH 0010H

30H 0000H z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)

31H 007FH Block Information (y + 1 = Number of blocks; z x 256B = block size)

32H 0000H y =127 + 1 = 128 blocks (007FH = 127)

33H 0000H

34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)

T9.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD1+0.3V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD1+1.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. VDD = VDDF and VDDS

2. Outputs shorted for no more than one second. No more than one output shorted at a time.

Operating Range

Range Ambient Temp VDD

Extended -20°C to +85°C 2.7-3.3V

AC Conditions of Test

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF

See Figures 21 and 22

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 10: DC Operating Characteristics (VDD = VDDF and VDDS = 2.7-3.3V)

Symbol Parameter

Limits

Test ConditionsMin Max Units

IDD Active VDD Current Address input = VILT/VIHT, at f=5 MHz,

VDD=VDD Max, all DQs open

Read OE#=VIL, WE#=VIH

Flash 18 mA BEF#=VIL, BES1#=VIH, or BES2=VIL

PSRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH

Concurrent Operation 40 mA BEF#=VIH, BES1#=VIL , BES2=VIH

Write1WE#=VIL

Flash 35 mA BEF#=VIL, BES1#=VIH, or BES2=VIL, OE#=VIH

PSRAM 30 mA BEF#=VIH, BES1#=VIL , BES2=VIH

ISB Standby VDD Current 135 µA VDD = VDD Max, BEF#=BES1#=VIHC, BES2=VIHC

ISBP Deep Power Down: PSRAM 10 µA BES2=VILC, BEF#=VIHC

IRT Reset VDD Current 30 µA Reset=VSS±0.3V

ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max

ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VILC Input Low Voltage (CMOS) 0.2 V VDD=VDD Max

VIH Input High Voltage 0.7 VDD VV

DD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max

VOLF Flash Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOHF Flash Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

VOLS PSRAM Output Low Voltage 0.4 V IOL =1 mA, VDD=VDD Min

VOHS PSRAM Output High Voltage 2.2 V IOL =-500 µA, VDD=VDD Min

T10.0 1299

1. IDD active while Erase or Program is in progress.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 11: Recommended System Power-up Timings

Symbol Parameter Minimum Units

TPU-READ1Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Program/Erase Operation 100 µs

T11.0 1299

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 12: Capacitance (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 12 pF

CIN1Input Capacitance VIN = 0V 12 pF

T12.0 1299

TABLE 13: Flash Reliability Characteristics

Symbol Parameter Minimum Specification Units Test Method

NEND1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T13.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

AC CHARACTERISTICS

TABLE 14: PSRAM Read Cycle Timing Parameters

Symbol Parameter Min Max Units

TRCS Read Cycle Time 70 ns

TAAS Address Access Time 70 ns

TBES Bank Enable Access Time 70 ns

TOES Output Enable Access Time 35 ns

TBYES UBS#, LBS# Access Time 70 ns

TBLZS1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

BES1# to Active Output 0 ns

TOLZS1Output Enable to Active Output 0 ns

TBYLZS1UBS#, LBS# to Active Output 0 ns

TBHZS1BES1# to High-Z Output 25 ns

TOHZS1Output Disable to High-Z Output 0 25 ns

TBYHZS1UBS#, LBS# to High-Z Output 35 ns

TOHS Output Hold from Address Change 10 ns

T14.0 1299

TABLE 15: PSRAM Write Cycle Timing Parameters

Symbol Parameter Min Max Units

TWCS Write Cycle Time 70 ns

TBWS Bank Enable to End-of-Write 60 ns

TAWS Address Valid to End-of-Write 60 ns

TASTS Address Set-up Time 0 ns

TWPS Write Pulse Width 60 ns

TWRS Write Recovery Time 0 ns

TBYWS UBS#, LBS# to End-of-Write 60 ns

TODWS Output Disable from WE# Low 30 ns

TOEWS Output Enable from WE# High 0 ns

TDSS Data Set-up Time 30 ns

TDHS Data Hold from Write Time 0 ns

T15.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 16: Flash Read Cycle Timing Parameters VDD = 2.7-3.6V

Symbol Parameter Min Max Units

TRC Read Cycle Time 70 ns

TCE Chip Enable Access Time 70 ns

TAA Address Access Time 70 ns

TOE Output Enable Access Time 35 ns

TCLZ1BEF# Low to Active Output 0 ns

TOLZ1OE# Low to Active Output 0 ns

TCHZ1BEF# High to High-Z Output 20 ns

TOHZ1OE# High to High-Z Output 20 ns

TOH1Output Hold from Address Change 0 ns

TRP1RST# Pulse Width 500 ns

TRHR1RST# High before Read 50 ns

TRY1,2 RST# Pin Low to Read Mode 20 µs

T16.0 1299

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

2. This parameter applies to Sector-Erase, Block-Erase and Program operations.

This parameter does not apply to Chip-Erase operations.

TABLE 17: Flash Program/Erase Cycle Timing Parameters

Symbol Parameter Min Max Units

TBP Word-Program Time 10 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 30 ns

TCS WE# and BEF# Setup Time 0 ns

TCH WE# and BEF# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP BEF# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1BEF# Pulse Width High 30 ns

TDS Data Setup Time 30 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 25 ms

TBE Block-Erase 25 ms

TSCE Chip-Erase 50 ms

T17.0 1299

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 4: PSRAM Read Cycle Timing Diagram for SST32HF64A2

ADDRESSES A

MSS-0

15-0

UBS#, LBS#

OE#

BES1#

RCS

AAS

BES

OES

BLZS

OLZS

BYES

BYLZS

BYHZS

DATA VALID

OHZS

BHZS

OHS

1299 F03b.0

Note: AMSS = Most Significant PSRAM Address

AMSS = A19 for SST32HF64A2

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 5: PSRAM Write Cycle Timing Diagram for SST32HF64A2 (WE# Controlled)1

AWS

ADDRESSES A

MSS3-0

BES1#

WE#

UBS#, LBS#

WPS

WRS

WCS

ASTS

BWS

BYWS

ODWS

OEWS

DSS

DHS

1299 F04b.0

NOTE 2

15-8,

7-0

VALID DATA IN

Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.

2. If BES1# goes Low coincident with or after WE# goes Low, the output will remain at high impedance.

If BES1# goes High coincident with or before WE# goes High, the output will remain at high impedance.

Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.

3. AMSS = Most Significant PSRAM Address

AMSS = A19 for SST32HF64A2

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 6: PSRAM Write Cycle Timing Diagram (UBS#, LBS# Controlled)1

ADDRESSES AMSS3-0

WE#

BES1#

BES2

TBWS

TAWS

TWCS

TWPS TWRS

TASTS TBYWS

DQ15-8, DQ7-0 VALID DATA IN

NOTE 2 NOTE 2

TDSS TDHS

UBS#, LBS#

1299 F05.0

Note: 1. If OE# is High during the Write cycle, the outputs will remain at high impedance.

2. Because DIN signals may be in the output state at this time, input signals of reverse polarity must not be applied.

3. AMSS = Most Significant PSRAM Address

AMSS = A19 for SST32HF64A2

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 7: Flash Read Cycle Timing Diagram

FIGURE 8: Flash WE# Controlled Program Cycle Timing Diagram

1299 F06.0

ADDRESS AMS-0

DQ15-0

WE#

OE#

BEF#

TCE

TRC TAA

TOE

TOLZ

VIH

HIGH-Z

TCLZ TOH TCHZ

HIGH-Z

DATA VALIDDATA VALID

TOHZ

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

1299 F07.0

ADDRESS AMS-0

DQ15-0

TDH

TWPH

TDS

TWP

TAH

TAS

TCH

TCS

BEF#

SW0 SW1 SW2

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

WE#

TBP

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence

X can be VIL or VIH, but no other value

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 9: BEF# Controlled Flash Program Cycle Timing Diagram

FIGURE 10: Flash Data# Polling Timing Diagram

1299 F08.0

ADDRESS AMS-0

DQ15-0

TDH

TCPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

SW0 SW1 SW2

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

BEF#

TBP

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence

X can be VIL or VIH, but no other value

1299 F09.0

ADDRESSES AMSF-0

DQ7Data Data# Data# Data

WE#

OE#

BEF#

TOEH

TOE

TCE

TOES

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 11: Flash Toggle Bit Timing Diagram

FIGURE 12: WE# Controlled Flash Chip-Erase Timing Diagram

1299 F10.0

ADDRESSES AMSF-0

DQ6 and DQ2

WE#

OE#

BEF#

TOE

TOEH

TCE

TOES

TWO READ CYCLES

WITH SAME OUTPUTS

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

1299 F11.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX10XX55XXAA XX80 XXAA

555

OE#

BEF#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence

This device also supports BEF# controlled Chip-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 17)

X can be VIL or VIH, but no other value.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 13: WE# Controlled Flash Block-Erase Timing Diagram

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

This device also supports BEF# controlled Block-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 17.)

BAX = Block Address

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence

X can be VIL or VIH, but no other value.

1299 F12.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX50XX55XXAA XX80 XXAA

BAX

OE#

BEF#

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

TWP

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 14: WE# Controlled Flash Sector-Erase Timing Diagram

1299 F13.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX30XX55XXAA XX80 XXAA

SAX

OE#

BEF#

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

TWP

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

This device also supports BEF# controlled Sector-Erase operation.

The WE# and BEF# signals are interchangeable as long as minimum timings are meet. (See Table 17.)

SAX = Sector Address

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence

X can be VIL or VIH, but no other value.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 15: Software ID Entry and Read

FIGURE 16: Software ID Exit and Reset/CFI Exit

1299 F14.0

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2 MFG ID

555 2AA 555 0000 0001

OE#

BEF#

THREE-WORD SEQUENCE FOR

SOFTWARE ID ENTRY

TWP

TWPH TAA

00BF

DEVICE ID

XX55XXAA XX90

Note: X can be VIL or VIH, but no other value.

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command

sequence

Device ID - See Table 3 on page 6

1299 F15.0

ADDRESS A14-0

DQ15-0

TIDA

TWP TWHP

WE#

SW0 SW1 SW2

555 2AA 555

THREE-WORD SEQUENCE FOR

SOFTWARE ID EXIT/CFI EXIT

OE#

BEF#

XXAA XX55 XXF0

Note: X can be VIL or VIH, but no other value.

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 17: CFI Query Entry and Read

FIGURE 18: Flash Sec ID Entry

1288 F12.0

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

CE#

Three-Byte Sequence for CFI Query Entry

TWP

TWPH TAA

XX55XXAA XX98

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1299 F16.0

ADDRESS AMSF-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

BEF#

THREE-BYTE SEQUENCE FOR

SEC ID ENTRY

TWP

TWPH TAA

XX55XXAA XX88

Note: AMS = Most Significant Flash Address

AMS = A21 for SST32HF64A2

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 19: RST# Timing Diagram (When no internal operation is in progress)

FIGURE 20: RST# Timing Diagram (During Program or Erase operation)

1299 F17.0

RST#

BEF#/OE#

TRP

TRHR

1299 F18.0

RST#

BEF#/OE#

TRP

TRY

End-of-Write Detection

(Toggle-Bit)

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 21: AC Input/Output Reference Waveforms

FIGURE 22: A Test Load Example

1299 F19.0

REFERENCE POINTS OUTPUTINPUT

VIT

VIHT

VILT

VOT

AC test inputs are driven at VIHT (VDD-0.2V) for a logic ‘1’ and VILT (0.2V) for a logic ‘0’. Measurement reference points for

inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Te s t

VOT - VOUTPUT Tes t

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1299 F20.0

TO TESTER

TO DUT

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 23: Deep Power-Down State Diagram

1299 DPDFlwCht.0

Power on

Initial State

(Wait 200 µs)

Standby

Mode

Deep

Power-down

Mode

Active

BES2 = VIL

Power-up

Sequence

Deep

Power-down

Exit

Sequence

BES1# = VIH or

VIL, BES2 = VIH

BES1# = VIH or

VIL, BES2 = VIH

BES1# = VIL,

BES2 = VIH,

UBS# & LBS# and/or LBS# = VIL

BES2 = VIH,

LBS# = VIH,

BES1# = VIH or UBS#

BES2 = VIL

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 24: Word-Program Algorithm

1299 F21.0

Start

Write data: XXAAH

Address: 555H

Write data: XX55H

Address: 2AAH

Write data: XXA0H

Address: 555H

Write Word

Address/Word

Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

Note: X can be VIL or VIH, but no other value

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 25: Wait Options

1299 F22.0

Wait TBP,

TSCE, or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Ye s

Program/Erase

Completed

Does DQ6

match?

Read same

word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read word

Is DQ7 =

true data?

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 26: Software ID/CFI Entry Command Flowcharts

1288 F21.0

Load data: XXAAH

Address: 555H

Software Product ID Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX90H

Address: 555H

Wait TIDA

Read Software ID

Load data: XXAAH

Address: 555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX98H

Address: 555H

Wait TIDA

Read CFI data

Load data: XXAAH

Address: 555H

Sec ID Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX88H

Address: 555H

Wait TIDA

Read Sec ID

X can be VIL or VIH, but no other value

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 27: Software ID/CFI Exit Command Flowcharts

1288 F22.0

Load data: XXAAH

Address: 555H

Software ID Exit/CFI Exit/Sec ID Exit

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

Load data: XXF0H

Address: XXH

Return to normal

operation

Wait TIDA

Return to normal

operation

X can be VIL or VIH, but no other value

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 28: Erase Command Sequence

1299 F25.0

Load data: XXAAH

Address: 555H

Chip-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX10H

Address: 555H

Load data: XXAAH

Address: 555H

Wait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX50H

Address: SAX

Load data: XXAAH

Address: 555H

Wait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 555H

Block-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX30H

Address: BAX

Load data: XXAAH

Address: 555H

Wait TBE

Block erased

to FFFFH

Note: X can be VIL or VIH, but no other value.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 29: Concurrent Operation Flowchart

1299 F26.0

Load SDP

Command

Sequence

Concurrent

Operation

Flash

Program/Erase

Initiated

Wait for End of

Write Indication

Flash Operation

Completed

End Concurrent

Operation

Read or Write

PSRAM

End

Wait

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

PRODUCT ORDERING INFORMATION

Valid combinations for SST32HF64A2

SST32HF64A2-70-4E-L2SE

SST32HF64A2-70-4E-L1PE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

Device Speed Suffix1 Suffix2

SST32HF64A2 -70 -4E -XXXX

Environmental Attribute

E1 = non-Pb

Package Modifier

S = 64 ball positions

P = 56 ball positions

Package Type

L2 = LFBGA (8mm x 10mm x 1.4mm, 0.40mm ball size)

L1 = LFBGA (8mm x 10mm x 1.4mm, 0.45mm ball size)

Temperature Range

E = Extended = -20°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

70 = 70 ns

Hardware Block Protection

2 = Top Boot Block

PSRAM Density

A = 16 Mbit

Flash Density

64 = 64 Mbit

Voltage

H = 2.7-3.3V

Product Series

32 = MPF+ + PSRAM ComboMemory

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

PACKAGING DIAGRAMS

FIGURE 30: 64-Ball Low-profile, Fine-pitch Ball Grid Array (LFBGA) 8mm x 10mm

SST Package Code: L2S

A1 CORNER

K J H G F E D C B A

A B C D E F G H J K

BOTTOM VIEWTOP VIEW

8.00 ± 0.10

0.40 ± 0.05

(64X)

A1 CORNER

10.00 ± 0.10

0.80

5.60

0.80

7.20

64-lfbga-L2S-8x10-400mic-2.0

Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.32 mm (± 0.05 mm)

1mm

SIDE VIEW

SEATING PLANE 0.32 ± 0.05

1.30 ± 0.10

0.12

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

FIGURE 31: 56-Ball Low-profile, Fine-pitch Ball Grid Array (LFBGA) 8mm x 10mm

SST Package Code: L1P

H G F E D C B A

A B C D E F G H

SIDE VIEW

SEATING PLANE

0.35 ± 0.05

1.30 ± 0.10

0.12

0.45 ± 0.05

(56X)

0.80

5.60

0.80

5.60

56-lfbga-L1P-8x10-450mic-4

Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm (± 0.05 mm)

1mm

A1 CORNER

BOTTOM VIEWTOP VIEW

8.00 ± 0.20

A1 CORNER

10.00 ± 0.20

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EOL Data Sheet

Multi-Purpose Flash Plus + PSRAM ComboMemory

SST32HF64A2

TABLE 18: Revision History

Number Description Date

00 •Initial Release of S71299

•Includes 64 MB devices and extended temperature MPNs previously released in data

sheets S71260 and S71261

•Removed 63-Ball Low-Profile, Fine-Pitch Ball Grid Array (LFBGA) 8mm x 10mm

Dec 2005

01 •Changed ISB max limits to 135 µA in DC Operating Characteristics Table 10 page 13 Apr 2006

02 •Removed SST32HF64A1, SST32HF64B1, and SST32HF64B2 (These part numbers

were never produced.)

•Added 56-Ball Low-Profile, Fine-Pitch Ball Grid Array (LFBGA) 8mm x10mm

•Revised AMS to A0 and AMSS to A0 in Pin Assignment Table 4

•Edited Note 1 for Pin Assignment Table 4

Nov 2006

03 •Added “Common Flash Memory Interface (CFI)” on page 5

•Moved PSRAM info to page 6

•Added CFI Query Entry to Table 6 on page 11

•Added CFI Query Table 7 on page 12

•Added System Interface Table 8 on page 12

•Added Device Geometry Table 9 on page 12

•Added Figure 16 “CFI Query Entry and Read” on page 27

•Changed 0.9VDD to VDD-0.2V and 01VDD to 0.2V in Figure 21 on page 29

Jul 2007

04 •End of life all valid combinations Mar 2009

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036

www.SuperFlash.com or www.sst.com

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