Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 30V
▼ Low Gate Charge RDS(ON) 25mΩ
▼ Fast Switching ID28A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 4 ℃/W
Rthj-a 62.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation 31.25
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.25
Continuous Drain Current, VGS @ 10V 24
Pulsed Drain Current195
Gate-Source Voltage +25
Continuous Drain Current, VGS @ 10V 28
Parameter Rating
Drain-Source Voltage 30
AP40T03GH/J
RoHS-compliant Product
200811034
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
1
GDSTO-252(H)
GDSTO-251(J)
G
D
S
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40T03GJ)
are available for low-profile applications.
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.032 -V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=18A - - 25 mΩ
VGS=4.5V, ID=14A - - 45 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=18A - 20 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
Drain-Source Leakage Current (Tj=150oC) VDS=24V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS= +25V - - +100 nA
QgTotal Gate Charge2ID=18A - 8.8 - nC
Qgs Gate-Source Charge VDS=20V - 2.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC
td(on) Turn-on Delay Time2VDS=15V - 6 - ns
trRise Time ID=18A - 62 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16 - ns
tfFall Time RD=0.83Ω- 4.4 - ns
Ciss Input Capacitance VGS=0V - 655 - pF
Coss Output Capacitance VDS=25V - 145 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
ISContinuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 28 A
ISM Pulsed Source Current ( Body Diode )1--95
A
VSD Forward On Voltage2Tj=25℃, IS=28A, VGS=0V - - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP40T03GH/J
3.Surface mounted on 1 in2 copper pad of FR4 board
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
AP40T03GH/J
0
25
50
75
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=150oC 10V
8.0V
6.0V
VG=4.0V
0
30
60
90
0.0 1.0 2.0 3.0 4.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TC=25oC 10V
8.0V
6.0V
VG=4.0V
0.2
0.8
1.4
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=18A
VG=10V
10
30
50
70
0 5 10 15
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=14A
TC=25
℃
0.1
1
10
100
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0.5
1.0
1.5
2.0
2.5
-50 0 50 100 150
Tj , Junction Temperature ( oC )
VGS(th) (V)
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP40T03GH/J
1
10
100
0.1 1 10 100
VDS ,Drain-to-Source Voltage (V)
ID (A)
TC=25oC
S
in
g
le Puls
e
100us
1ms
10ms
100ms
DC 0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re spon se (Rthjc)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0
3
6
9
12
036912
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
I D=18A
VDS =10V
VDS =15V
VDS =20V
10
100
1000
1 8 15 22 29
VDS ,Drain-to-Source Voltage (V)
C (pF)
f=1.0MHz
Ciss
Coss
Crss
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
Package Outline : TO-252
Millimeters
MIN NOM MAX
A2 1.80 2.30 2.80
A3 0.40 0.50 0.60
B1 0.40 0.70 1.00
D 6.00 6.50 7.00
D1 4.80 5.35 5.90
E3 3.50 4.00 4.50
F 2.20 2.63 3.05
F1 0.50 0.85 1.20
E1 5.10 5.70 6.30
E2 0.50 1.10 1.80
e -- 2.30 --
C 0.35 0.50 0.65
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-252
Laser Marking
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
e
e
D
D1
E2
E1
F
B1 F1
A2
A3 C
R : 0.127~0.381
(
0.1mm
Part Number
Package Code
40T03GH
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
LOGO
Meet Rohs requirement
for low voltage MOSFET only
E3
5
Package Outline : TO-251
MIN NOM MAX
A 2.20 2.30 2.40
A1 0.90 1.20 1.50
B1 0.40 0.60 0.80
B2 0.60 0.85 1.05
c0.40 0.50 0.60
c1 0.40 0.50 0.60
D 6.40 6.60 6.80
D1 4.80 5.20 5.50
E 6.70 7.00 7.30
E1 5.40 5.60 5.80
E2 1.30 1.50 1.70
e---- 2.30 ----
F 7.00 8.30 9.60
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-251
SYMBOLS
ADVANCED POWER ELECTRONICS CORP.
Millimeters
40T03GJ
YWWSSS
Part Numbe
r
Package Code
A
c1
A1
c
e
D
E2
E1 E
B1
B2
F
D1
e
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW ：Week
SSS ：Sequence
LOGO
meet Rohs requirement
for low voltage MOSFET only
6
