AP40T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D Low Gate Charge Fast Switching BVDSS 30V RDS(ON) 25m ID G 28A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. GD The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications. G D S S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol Rating Units Drain-Source Voltage 30 V VGS Gate-Source Voltage +25 V ID@TC=25 Continuous Drain Current, VGS @ 10V 28 A ID@TC=100 Continuous Drain Current, VGS @ 10V 24 A 95 A VDS Parameter 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 31.25 W Linear Derating Factor 0.25 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 4 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data and specifications subject to change without notice 1 200811034 AP40T03GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.032 - V/ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=18A - - 25 m VGS=4.5V, ID=14A - - 45 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=18A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=150 C) VDS=24V ,VGS=0V - - 25 uA Gate-Source Leakage VGS= +25V - - +100 nA ID=18A - 8.8 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=20V - 2.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 5.8 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=18A - 62 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 16 - ns tf Fall Time RD=0.83 - 4.4 - ns Ciss Input Capacitance VGS=0V - 655 - pF Coss Output Capacitance VDS=25V - 145 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 95 - pF Min. Typ. - - 28 A - - 95 A - - 1.3 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.3V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 1 2 Forward On Voltage Tj=25, IS=28A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP40T03GH/J 90 75 10V 8 .0V ID , Drain Current (A) 6 .0V 60 10V 8 .0V o T C =150 C ID , Drain Current (A) o T C =25 C 30 50 6 .0V 25 V G =4.0V V G = 4. 0V 0 0 0.0 1.0 2.0 3.0 4.0 0.0 1.0 V DS , Drain-to-Source Voltage (V) 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 70 I D =18A V G =10V Normalized RDS(ON) I D =14A T C =25 RDS(ON) (m) 50 30 1.4 0.8 0.2 10 0 5 10 -50 15 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 100 2.0 10 T j =25 o C IS(A) VGS(th) (V) T j =150 o C 1.5 1 1.0 0.5 0.1 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 o T j , Junction Temperature ( C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP40T03GH/J f=1.0MHz 12 1000 9 C iss V DS =10V V DS =15V V DS =20V C (pF) VGS , Gate to Source Voltage (V) I D =18A 6 C oss C rss 100 3 10 0 0 3 6 9 1 12 8 15 22 29 V DS ,Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) ID (A) Duty factor = 0.5 100us 10 1ms 10ms 100ms DC T C =25 o C Single Pulse 1 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area VDS 90% 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 E3 B1 F1 e Millimeters SYMBOLS E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number 40T03GH Package Code Meet Rohs requirement for low voltage MOSFET only LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E2 E1 E A1 B2 F B1 c e MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 40T03GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y Last Digit Of The Year WW Week SSS Sequence 6