Character istics TN1215, TYN61 2, TYN812 , TYN1012
2/15 DocID7475 Rev 10
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
TN1215 / TYNx12
IT(RMS) On-state RMS curr ent (180° conduction angle ) Tc = 105 °C 12 A
IT(AV) Aver age on-state current (180° conduction ang le) Tc = 105 °C 8 A
ITSM Non repetitive surge peak
on-state current tp = 8.3 ms Tj = 25 °C 145 A
tp = 10 m s 140
I2tI
2t val ue fo r fu s in g tp = 10 ms Tj = 25 °C 98 A2S
dI/dt Cri tica l ra te of ris e of on- sta t e
current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µ
s
IGM Pe ak ga te curr e n t tp = 20 µs Tj = 125 °C 4 A
PG(AV) A verage gate power dissipation Tj = 125 °C 1 W
Tstg
Tj
Storage junction temperature ran ge
Operating junc tion temperat ure range - 40 to + 150
- 40 to + 125 °C
VRGM Maxim um peak reverse gate v oltage 5 V
Tabl e 3. Standard electrical charac teris tics (Tj = 25 °C, unless otherw ise specified)
Symbol Test conditions TN1215 TYN Unit
B/G G x12T x12
IGT VD = 12 V, RL = 33 Ω
MIN. 2 0.5 2 mA
MAX. 15 5 15
VGT MAX. 1.3 V
VGD VD = VDRM, RL = 3.3 kΩTj = 125 °C MIN. 0.2 V
IH IT = 500 mA, gate open MAX. 40 30 15 30 mA
ILIG = 1.2 IGT MAX. 80 60 30 60 mA
dV/dt VD = 67% VDRM, gate open Tj =125 °C MIN. 200 40 200 V/µs
VTM ITM = 24 A tp = 380 µs Tj = 25 °C MAX. 1.6 V
Vt0 Threshold volt age Tj = 1 25 ° C MAX. 0.85 V
RdDynamic resist ance Tj = 125 °C MAX. 30 mΩ
IDRM
IRRM VDRM = VRRM Tj = 25 °C MAX. 5µA
Tj = 125 °C 2 mA