Microsem Progress Powered by Technology gw 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS MS4600 Features e GOLD METALLIZATION e NO THERMAL RUNAWAY e COMMON SOURCE CONFIGURATION e 300 WATTS 50 VOLTS 400x.425 2L Wide (M176) e 15 dB MIN. AT 175 MHz Epoxy Sealed e CLASS AOR AB DESCRIPPTDN: PIN CONNECTION The MS4600 is a gold metallized N-Channel Enhancement Mode MOSFET. The MS4600 is intended for use in 50 Vdc large signal 3 3 applications up to 175 MHz. S cl | O 1 Lj} Lot 1 2 2 1. Drain 3. Source 2. Gate ABSOIUTEM AXM UM RATINGS (Tcase = 25C) Symbol Parameter Value Unit Vierypss Drain - Source Voltage 125 Vv Voar Drain - Gate Voltage 125 Vv Vas Gate - Source Voltage +40 Vv Ib Drain Current 40 A Poiss Power Dissipation 500 Ww Tste Storage Temperature -65 to +150 C Ty Junction Temperature 200 C Them alData | RrnG-c) | Junction - Case Thermal Resistance 0.35 | C/W MSC0916.PDF 11-03-98 Microsemi Progress Powered by Technology MS4600 FIFCTRICALSPEC FTATOINS (Icase = 25C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit Vierjoss Ves =0V los = 50mA 125 V loss Vas =0V Vos = 50V - - 5.0 mA lass Vas = 20V Vos = OV _ _ 1.0 pA Ves Vos =10V Ib = 100mA 1.0 5.0 V Ges Vos = 10V Ip =5A 3.0 - - mho Ciss Vos = 50V Vas =0V f = 1MHz - 350 - pF Coss Vos = 50V Vas =0V f = 1MHz - 225 - pF Crss Vos = 50V Vas =0V f = 1MHz - 20 - pF DYNAM TC Symbol Test Conditions Value Min. | Typ. | Max. Unit Pin f=175 MHz Vpp = 50V Pour =300 W(PEP) Ipg= 500mMA 9.5 Ww Gps f=175 MHz Vpp = 50V Pour =300 W(PEP) Ipg= 500mMA 15 dB n f=175 MHz Vpp = 50V Pour =300 W(PEP) Ipg= 500mMA 60 % MSC0916.PDF 11-03-98 Microsem Progress Powered by Technology MS4600 Power Out vs Power In (175MHz) 350 300 250 200 150 100 Pout, OUTPUT POWER (WATTS) 50 1 2 3 4 5 6 7 8 9 10 Pin, INPUT POWER (WATTS) 25.0 20.0 15.0 10.0 5.0 0.0 (ap) NIVS HSMOd Dd Pout vs Pin (Watts) ~*~ Power Gain (dB) MSC0916.PDF 11-03-98 Microsemi Progress Powered by Technology L2 @) ca Res Rs tT] Lovee tops Lise ph Ste R2 = DUT RF t *) ovrPuT Tl I I I I co | | Ho R1 ] | _ | AA ~ C2 | s - | _ ops CT cs | | | Ct | | h. Rl 10K Ohms, 1/2 Watt Ll #16 AWG, 10 Tums, 0.25" ID, Close Wound, 360nH R2 1.0 KOhms, 1/2 Watt L2 Ferrite Beads for 1.5uH - 2.0uH R3 2.0 KOhms, 1/2 Watt Tl 9:1 Transformer R4 1.0 KOhms, Potentiometer T2 4:1 Transformer RS 330 Ohms, 2 Watt Board Material: 0,062" Fiberglass (FR-4), cl Arco, #404 12pF - 65pF Variable Capacitor Cu clad, 2-sides (Er=5.0) C2, C4, C8 1000pF Chip Capacitor C3,C6,C7 0.1uF Chip Capacitor C5 330pF Chip Capacitor c9 ARCO, #404 12pF - 65pF Variable Capacitor C10 (0.47uF Chip Capacitor Note: For stability, T1 must be loaded with Ferrite Torroids or beads to increase common mode inductance. MS4600 175 MHz Test Circuit MSC0916.PDF 11-03-98 Microsemi Progress Powered by Technology PACKAGE MECHANICAL DATA MS4600 PAGKAGE STYLE M176 (B .080 X 45 7 A FULL R 4X .060 R o [- E D t _ M | Li925] | F - , | , 4 t J K t MINIMUM MAXIMUM MINIMUM MAXIMUM INCHES/MM_|_INCHES/MM INCHES/MM_|_INGHES/MM A | .220/5,59 | .230/5,84 | | .003/0,08 | .007/0,18 B .210/5,33 J [| .060/1,52 | .070/1,78 C .125/3,18 K [| .100/72,54 | .115/2,92 D | .380/9,65 | .390/9,91 L .230/5,84 E |.580/14,73| .620/15,75 || M | .395/10,03 | .405/10,29 F |.420/10,67| .430/10,93 G_|1.090/27,69| 1.105/28,07 H |1.335/33,91| 1.345/34,16 MSC0916.PDF 11-03-98