Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
IT(AV) 85 A
@ TC85 °C
IT(RMS) 135 A
ITSM @ 50Hz 2450 A
@ 60Hz 2560 A
I2t@
50Hz 30 KA2s
@ 60Hz 27 KA2s
VDRM/VRRM 400 to 1200 V
tq range (see table) 10 to 20 µs
TJ- 40 to 125 ° C
Parameters ST083S Units
Major Ratings and Characteristics
case style
TO-209AC (TO-94)
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
85A
1
Bulletin I25185 rev. C 03/03
www.irf.com
ST083S Series
2www.irf.com
Bulletin I25185 rev. C 03/03
Voltage V DRM/VRRM, maximum VRSM , maximum I DRM/IRRM max.
Type number Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max.
VVmA
04 400 500
08 800 900
10 1000 1100
12 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 210 120 330 270 2540 1930
400Hz 200 120 350 210 1190 810
1000Hz 150 80 320 190 630 400 A
2500Hz 70 25 220 85 250 100
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd VDRM VDRM VDRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 22Ω / 0.15µF 2 2Ω / 0.15µF 2 2Ω / 0.15µF
ITM
180oel
180oel 100µs
ITM ITM
Current Carrying Capability
V
IT(AV) Max. average on-state current 85 A 180° conduction, half sine wave
@ Case temperature 85 °C
IT(RMS) Max. RMS on-state current 1 3 5 DC @ 77°C case temperature
ITSM Max. peak, one half cycle, 2450 t = 10ms No voltage
non-repetitive surge current 2560 A t = 8.3ms reapplied
2060 t = 10ms 100% VRRM
2160 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 30 t = 10ms No voltage Initial TJ = TJ max
27 t = 8.3ms reapplied
21 t = 10ms 100% VRRM
19 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 300 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST083S Units Conditions
On-state Conduction
KA2s
ST083S 30
ST083S Series
3
www.irf.com
Bulletin I25185 rev. C 03/03
VTM Max. peak on-state voltage 2.15 ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1Low level value of forward
slope resistance
rt2High level value of forward
slope resistance
IHMaximum holding current 60 0 TJ = 25°C, IT > 30A
ILTypical latching current 1000 T J = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST083S Units Conditions
On-state Conduction
1.46 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
1.52 (I > π x IT(AV)), TJ = TJ max.
V
2.32 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
2.34 (I > π x IT(AV)), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise TJ = TJ max, VDRM = rated VDRM
of turned-on current ITM = 2 x di/dt
TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
TJ = TJ max, ITM = 100A, commutating di/dt = 10A/µs
VR = 50V, tp = 200µs, dv/dt = 200V/µs
Switching
Parameter ST083S Units Conditions
1000 A/µs
tdTypical delay time 0.80 µs
dv/dt Maximum critical rate of rise of TJ = TJ max., linear to 80% VDRM, higher value
off-state voltage available on request
IRRM Max. peak reverse and off-state
IDRM leakage current
Parameter ST083S Units Conditions
Blocking
500 V/µs
30 mA TJ = TJ max, rated VDRM/VRRM applied
PGM Maximum peak gate power 40
PG(AV) Maximum average gate power 5
IGM Max. peak positive gate current 5 A TJ = TJ max, tp ≤ 5ms
+VGM Maximum peak positive
gate voltage
-VGM Maximum peak negative
gate voltage
IGT Max. DC gate current required
to trigger
VGT Max. DC gate voltage required
to trigger
IGD Max. DC gate current not to trigger 20 mA
VGD Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST083S Units Conditions
20
5VT
J = TJ max, tp ≤ 5ms
200 mA
3V
TJ = 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated VDRM applied
Min Max
WT
J = TJ max, f = 50Hz, d% = 50
tqMax. turn-off time 10 20
ST083S Series
4www.irf.com
Bulletin I25185 rev. C 03/03
1- Thyristor
2- Essential part number
3- 3 = Fast turn off
4- S = Compression bonding Stud
5- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
6- P = Stud Base 1/2"-20UNF-2A threads
7- Reapplied dv/dt code (for tq Test Condition)
8-t
q code
9- 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
TJMax. junction operating temperature range -40 to 125
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance, junction to case 0.195 DC operation
RthCS Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased
T Mounting torque, ± 10% 15.5 Nm
(137) (Ibf-in)
14 Nm
(120) (Ibf-in)
wt Approximate weight 130 g
Case style TO-209AC (TO-94) See Outline Table
Parameter ST083S Units Conditions
Thermal and Mechanical Specifications
°C
K/W
Non lubricated threads
Lubricated threads
Ordering Information Table
568 9
ST 08 3 S 12 P F N 0
347
Device Code
12
∆RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.034 0.025
120° 0.041 0.042
90° 0.052 0.056 K/W TJ = TJ max.
60° 0.076 0.079
30° 0.126 0.127
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
dv/dt - tq combinations available
dv/dt (V/µs) 200
tq(µs) 10 FN
up to 800V 20 FK
tq(µs)
only for 20 FK
1000/1200V
ST083S Series
5
www.irf.com
Bulletin I25185 rev. C 03/03
Outline Table
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
Fast-on Terminals
C.S. 0.4 mm 2
10 (0.39)
RED SHRINK
RED CATHODE
RED SILICON RUBBER
4.3 (0.17) DIA
21 (0.83)
12.5 (0.49) MAX.
157 (6. 18 )
170 (6.69)
(.0006 s.i.)
8.5 (0.33) DIA.
16.5 (0.65) MAX.
MAX.
70 (2.75) MIN.
CERAMIC HOUSING
22.5 (0.88) MAX. DIA.
29 (1.14) MAX.
SW 27
C.S. 16mm 2
FLEXIBLE LEAD
(.025 s.i.)
2.6 (0.10) MAX.
WHITE SHRINK
20 (0.79) MIN.
29.5 (1.16)
MAX.
1/2"-20UNF-2A
9.5 (0.37) MIN.
WHITE GATE
215 (8.46)
AMP. 280000-1
REF-250
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140
DC
30° 60° 90°120° 180°
A v erage On-state Cu rr e nt ( A)
Max imum A ll o wabl e Case Temper atu re (°C)
Conduction Peri od
ST083S Series
R (DC) = 0.195 K/W
thJC
Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics
80
90
100
110
120
130
0 102030405060708090
Max imum A llowabl e Case Temperature (° C)
30° 60° 90° 120° 180°
A verage On -state Curr ent ( A)
Conduction Angle
ST083S Series
R (DC) = 0.1 9 5 K/W
thJC
ST083S Series
6www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
25 50 75 100 125
Maxi mum A llowabl e A mbient Temperatu re (° C )
R = 0.1 K/W - Delta R
thS
A
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
50
100
150
200
250
0 20406080100120140
DC
180°
120°
90°
60°
30°
RMS Lim it
Conduction Per iod
Maximum Average On-state P ower Los s (W)
Average On-state Current (A )
ST083S Series
T = 125°C
J
25 50 75 100 125
M axim um Allo wable Ambient Tempe rature ( °C )
R = 0.1 K/W - Delta R
thS
A
0.2 K/W
0.3 K/ W
0.4 K/W
0.5 K/W
0.8 K/W
1.2 K/W
0
20
40
60
80
100
120
140
160
180
0
10 20 30 40 50 60 70 80 90
180°
120°
90°
60°
30°
RMS Lim it
Conduction Angle
Max imum Av e r age On - state Power Loss (W)
A verage On -state C urr ent (A )
ST083S Series
T = 125°C
J
1000
1200
1400
1600
1800
2000
2200
1 10 100
N umber Of Equal Amplitude H alf Cycl e Cur r ent Pulses (N )
Peak Half Sine Wave O n -state Cu rre n t ( A)
Initial T = 125°C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
J
ST083S Series
A t An y Rate d Lo ad C o ndition A n d With
Rated V Appli ed Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
0.01 0.1 1
Pulse T rain Duration (s)
Versus Pulse Train Duration. Control
Of Conducti on May N ot Be Maintained.
Pea k Ha lf Si n e Wave On-state Cu rrent (A)
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST083S Series
M aximu m Non Repeti tive Su rge Current
ST083S Series
7
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic
100
1000
10000
11.522.533.544.555.566.5
T = 25° C
J
In st an tan e o us O n -state C urren t ( A)
Instantane ous On- state V oltage (V)
T = 125°C
J
ST083S Series
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq ua re Wa v e Pu lse D ura t i on ( s)
thJC
Tr ansi ent Thermal Impedance Z (K/W)
ST083S Series
St e a d y St a t e V a l ue
R = 0.195 K /W
(D C Oper ati on)
thJC
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 100
Maxim u m Re verse Reco v ery Cu rr ent - Irr (A)
Rate Of Fall Of Forward Cur rent - di/dt (A/µs)
ST083S Series
T = 125 °C
I = 500 A
300 A
200 A
J
100 A
50 A
TM
20
40
60
80
100
120
140
160
10 20 30 40 50 60 70 80 90 100
ST083S Se rie s
T = 125 °C
I = 500 A
300 A
200 A
J
100 A
50 A
Rate Of Fal l Of On- state Curr ent - di /dt (A/µs)
Max imum Reverse Recover y Charge - Qr r (µ C)
TM
Fig. 11 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Ba sew idt h (µs)
Peak On-state Current (A)
1000
1500
2000
3000
200
500
Snubber cir cuit
R = 22 ohms
C = 0. 15 µ F
V = 80% V
s
s
DDRM
ST083S Se rie s
Sinusoidal pulse
T = 60°C
C
1E4
tp
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewi dth (µs)
1000
1500
2000
3000
200
500
Snub b e r c irc uit
R = 22 o hm s
C = 0 .1 5 µF
V = 80% V
s
s
DDRM
ST083S Se rie s
Sinusoidal pu lse
T = 85°C
C
tp
1E1
ST083S Series
8www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Fig. 13 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
2000
3000
200
500
Sn u b b e r c ir c u i t
R = 22 o hms
C = 0.15 µF
V = 80% V
s
s
DDRM
ST083S Se rie s
Trape zo idal pu lse
T = 6 0 °C
di/dt = 50A/µ s
C
Pulse Basewid th (µs)
Peak On-stat e Current (A)
tp
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µ s)
1000
1500
2000
200
500
Snubber circuit
R = 22 o hms
C = 0.15 µF
V = 80 % V
s
s
DDRM
ST083S Se rie s
Trapezoidal pulse
T = 8 5°C
di/dt = 50A/µs
C
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
400
2500
100
1000
1500
2000
3000
200
500
Snubber cir cuit
R = 22 o hm s
C = 0.15 µF
V = 80 % V
s
s
DDRM
ST0 83S Se r i e s
Trape zoidal pul se
T = 60°C
di/dt = 100A/µs
C
Pulse Basewidth (µs)
Pea k On-s tate Current (A)
tp
1E4
50 H z
1E1 1E2 1E3 1E4
50 H z
400
2500
100
Pulse Ba sew id th (µs)
1000
1500
2000
200
500
Snubber circuit
R = 22 ohms
C = 0.15 µF
V = 80 % V
s
s
DDRM
ST0 8 3S Se ri e s
Trapezoidal pulse
T = 85° C
di/dt = 100A/µs
C
tp
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Basewid th (µs)
20 jou les per pulse
2
1
0.5
0.3
0.2
0.1
ST083S Series
Sinusoidal pulse
10
5
Peak On -state Cu rrent ( A)
3
tp
1E4
1E11E21E31E4
Pulse Ba sew idth (µs)
ST083S Se ri e s
Rectangular pulse
di/d t = 50A/µs 20 joules per pulse
7.5
4
2
1
0.5
0.3
0.2
0.1
tp
1E1
ST083S Series
9
www.irf.com
Bulletin I25185 rev. C 03/03
Fig. 15 - Gate Characteristics
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj= 25 °C
Tj=1 25 °C
Tj= - 40 °C
(1) (2)
Instantaneous Gate Current (A)
Instantaneou s Gate V ol tage (V )
Rectan gular gate pu lse
a) Reco m m e nded lo ad lin e for
b) Recom m ended lo ad line f o r
<= 3 0 % rated di/dt : 1 0V, 10ohms
r ated di/dt : 20 V, 10 ohms; tr<=1 µs
tr< =1 µ s
(1) P GM = 10W, tp = 20ms
(2) P GM = 20W, tp = 10ms
(3) P GM = 40W, tp = 5ms
(4) P GM = 60W, tp = 3.3ms
(3)
Device: ST083S Series
(4)
Frequency Limited by PG(A V)
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
