
SKiiP 232GH120-210CTV
by SEMIKRON 021015 B 7 − 43
I. Power section
bsolu te maximum ra tings Ts = 25°C unless otherwise specified
Symbol Conditions Values Units
IGBT
VCES 1200 V
VCC 1) Operatin g DC link vol tage 900 V
VGES ± 20 V
ICTs = 25 (70) °C 200 (150) A
Inverse diode
IF = -ICTs = 25 (70) ° C 200 (150) A
IFSM Tj = 150 °C, tp = 10ms; sin 1440 A
I
t (Diode) Diode, Tj = 150 °C, 10ms 10 kA2s
Tj , (Tstg) -40 (-25) ...+150 (125) °C
Visol AC, 1min. 3000 V
Characteristics Ts = 25°C unless otherwise specified
Symbol Conditions min. typ. max. Units
GBT
VCEsat IC = 175A, Tj = 25 ( 125)°C −2,6 (3, 1) 3,1 V
VCEO Tj = 25 (125) °C −1,2 (1,3) 1,5 (1,6) V
rCE Tj = 25 (125) °C −7,5
(10,0) 9,0
(11,5) mΩ
ICES V
E=0,V
E=V
ES,Tj=25(125) °C −(10) 0,4 mA
I
=175A, Vcc=600V −− 53 mJ
Eon + Eoff Tj=125°C Vcc=900V −− 93 mJ
RCC´-EE´ terminal chip, Tj = 125 °C −0,50 −
Ω
LCE top, bot tom −15,0 −nH
CCHC per phase, AC-side −1,4 −nF
nverse di ode
VF = VEC IF= 150A; Tj = 25(125) °C −2,1 (1, 9)
,6 V
VTO Tj = 25 (125) °C −1,3 (1,0) 1,4 (1,1) V
rTTj = 25 (125) °C −5,0 (6,0) 6,8 (7,8) mΩ
IC=175A Vcc=600V −− 6mJ
ERR Tj=125°C Vcc=900V −− 8mJ
echanical data
Mdc DC terminals, SI Units 6 −8Nm
Mac AC terminals, SI Units 13 −15 Nm
wSKiiP 2 System w/o heat sink −1,9 −kg
w heat si nk −4,7 −kg
Thermal characteristics (P16 heat sink; 310 m^3/ h); "r" reference t o
temperature sensor
RthjrIGBT per IGBT −−
0,129 K/W
Rthjrdiode per diode −−
0,375 K/W
Rthra per modul e −−
0,044 K/W
Zth Ri (mK/W) (max.) taui(s)
1234 1 2 3 4
IGBTjr 14 99 15 −1 0,13 0,001 −
diodejr 41 289 45 −1 0,13 0,001 −
heatsinkra 14,2 19,3 6,8 3,7 262 50 5 0,02
SKiiP
2
SK integrated intelligent
Power
4-pack
SKiiP 232GH120-210CTV
Case S2
eatures
• SKiiP technology inside
• low loss IGBTs
• CAL diod e technology
• integrated curr ent se nsor
• integrated temperature sensor
• integrated heat sink
• IEC 60721-3-3 (humidity) class
3K3/IE32 (SKiiP 2 Sy stem)
• IEC 68T.1 (climate) 40/ 125/56
(SKiiP 2 power se ction)
1) with assembl y of suitable MKP
capacitor per terminal (SEMIKRON
type is recom mended)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expr esse d or implied is made r egarding deliver y, perform ance or suitability.