2011-09-30
1
BFN19
1
2
2
3
PNP Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets
and switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary types: BFN18 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BFN19 DH 1=B 2=C 3=E SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 5
Collector current IC200 mA
Peak collector current, tp ≤ 10 ms ICM 500
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 130 °C
Ptot 1 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 20 K/W
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFN19
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 250 V, IE = 0
VCB = 250 V, IE = 0 , TA = 150 °C
ICBO
-
-
-
-
0.1
20
µA
Emitter-base cutoff current
VEB = 5 V, IC = 0
IEBO - - 100 nA
DC current gain1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
30
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
AC Characteristics
Transition frequency
IC = 20 MHz, VCE = 10 V, f = 20 MHz
fT- 100 - MHz
Collector-base capacitance
VCB = 30 V, f = 1 MHz
Ccb - 2.5 - pF
1Pulse test: t < 300µs; D < 2%
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BFN19
DC current gain hFE = ƒ(IC)
VCE = 10 V
EHP00592BFN 17/19
10
10 mA
h
C
10
5
FE
10
3
1
10
0
5
10 10 10
-1 0 1 2 3
Ι
5
10
2
555
2
Operating range IC = ƒ(VCEO)
TA = 25°C, D = 0
10 0 10 1 10 2 10 3
-1
10
0
10
1
10
2
10
3
10
10 µs
100 µs
1 ms
DC
Collector current IC = ƒ(VBE)
VCE = 10V
EHP00589BFN 17/19
10
0V
BE
1.5
mA
C
10
3
1
10
-1
5
0.5 1.0
10
0
5
Ι
V
5
10
2
Collector cutoff current ICBO = ƒ(TA)
VCBO = 200 V
EHP00591BFN 17/19
10
0˚C
A
150
nA
CBO
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
max
typ
5
10
3
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BFN19
Transition frequency fT = ƒ(IC)
VCE = 10 V
EHP00590BFN 17/19
10
10 10 mA
f
C
10
MHz
10
T
555
Ι
0123
10
3
2
10
1
5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB(VEB
0
10
20
30
40
50
60
70
pF
90
CCB(CEB)
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.2
0.4
0.6
0.8
W
1.2
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00588BFN 17/19
-6
0
10
5
D
=
5
10
1
5
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t
p
=
DT
t
p
T
totmax
tot
PDC
P
p
t
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BFN19
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45
+0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05
45˚
0.15
2.5
±0.1
4
±0.25
M
B
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5
±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.
1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2011-09-30
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BFN19
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
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intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body or
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