934057752115 - NXP SEMICONDUCTORS

DATA SH EET

Product data sheet 2003 Aug 20

DISCRETE SEMICONDUCTORS

PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

Very low VF MEGA Schottky barrier

rectifiers

ndb

ook, halfpage

M3D049

2003 Aug 20 2

NXP Semiconductors Product data sheet

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

FEATURES

•Very low forward voltage

•High surge current

•Very small plastic SMD package.

APPLICATIONS

•Low voltage rectification

•High efficiency DC/ DC conv ersion

•Voltage clamping

•Inverse polarity protection

•Low power cons ump tion applications.

DESCRIPTION

Planar Maximum Efficiency Ge neral Application (MEGA)

Schottky barrier rectifier with an integrated guard ring for

stress protection, encapsulated in a SOD323 (SC-76) very

small SMD plastic package.

PINNING

PIN DESCRIPTION

1cathode

2anode

col

umns ka

MAM283

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

The marking bar indicates the cathode.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

IFforward cu rr ent 0.5 A

VRreverse vo ltage

PMEG2005AEA 20 V

PMEG3005AEA 30 V

PMEG4005AEA 40 V

MARKING

RELATED PRODUCTS

TYPE NUMBER MARKING CODE

PMEG2005AEA E5

PMEG3005AEA E4

PMEG4005AEA E3

TYPE NUMBER DESCRIPTION FEATURE

PMEGxx05AEV 0.5 A; 20/30/40 V very low VF MEGA Schottky rectifier SOT666 package

PMEG2005EB 0.5 A; 20 V very low VF MEGA Schottky rectifier smaller SOD523 (SC-79) package

PMEG2010EA 1 A; 20 V very low VF MEGA Schottky rectifier higher forward c urrent

2003 Aug 20 3

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and

IF(AV) rating will be available on request.

THERMAL CHARACTE RISTICS

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and

IF(AV) rating will be available on request.

3. Device mounted o n an FR4 printed-circuit board with copper clad 10 × 10 mm.

4. Solder point o f c athode tab.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage

PMEG2005AEA −20 V

PMEG3005AEA −30 V

PMEG4005AEA −40 V

IFcontinuous forward current note 1 −0.5 A

IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5 −3.5 A

IFSM non-repetitive peak forward current tp = 8 ms; square wave −10 A

Tjjunction temperature note 2 −150 °C

Tamb operating ambient temperature note 2 −65 +150 °C

Tstg storage temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note s 1 and 2 450 K/W

in free air; notes 2 and 3 210 K/W

Rth j-s thermal resistance from junction to

soldering point note 4 90 K/W

2003 Aug 20 4

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS PMEG2005AEA PMEG3005AEA PMEG4005AEA UNIT

TYP. MAX. TYP. MAX. TYP. MAX.

VFforward voltage IF = 0.1 mA 90 130 90 130 95 130 mV

IF = 1 mA 150 190 150 200 155 210 mV

IF = 10 mA 210 240 215 250 220 270 mV

IF = 100 mA 280 330 285 340 295 350 mV

IF = 500 mA 355 390 380 430 420 470 mV

IRcontinuous reverse

current VR = 10 V; note 1 15 40 12 30 720 μA

VR = 20 V; note 1 40 200 −−−−μA

VR = 30 V; note 1 − − 40 150 − − μA

VR = 40 V; note 1 −−−−30 100 μA

Cddiode capacitan c e VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF

2003 Aug 20 5

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

GRAPHICAL DATA

handbook, halfpage

0.60.40.2

103

102

10−1

MDB675

VF (V)

(1) (2) (3)

(mA)

Fig.2 Forward current as a function of forward

voltage; typical values.

PMEG2005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

01051520

VR (V)

MDB676

(μA)

(1)

(2)

(3)

Fig.3 Reverse current as a fun ction of reverse

voltage; typical values.

PMEG2005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

01051520

VR (V)

(pF)

150

100

MDB677

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

PMEG2005AEA

f = 1 MHz; Tamb = 25 °C.

2003 Aug 20 6

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

handbook, halfpage

0.60.40.2

103

102

10−1

MDB672

VF (V)

(1) (2) (3)

(mA)

Fig.5 Forward current as a function of forward

voltage; typical values.

PMEG3005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

3020100

MDB673

(μA)

VR (V)

(1)

(2)

(3)

Fig.6 Reverse current as a fun ction of reverse

voltage; typical values.

PMEG3005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0 5 10 20

120

MDB674

(pF)

VR (V)

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

PMEG3005AEA

f = 1 MHz; Tamb = 25 °C.

2003 Aug 20 7

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

handbook, halfpage

0.60.40.20

103

102

10−1

MDB669

(mA)

VF (V)

(1) (2) (3)

Fig.8 Forward current as a function of forward

voltage; typical values.

PMEG4005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

02010 30 40

VR (V)

MDB670

(μA)

(1)

(2)

(3)

Fig.9 Reverse current as a fun ction of reverse

voltage; typical values.

PMEG4005AEA

(1) Tamb = 150 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

0 5 10 20

100

MDB671

VR (V)

(pF)

Fig.10 Diode capacita nc e as a funct ion of rever se

voltage; typical values.

PMEG4005AEA

f = 1 MHz; Tamb = 25 °C.

2003 Aug 20 8

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOD323 SC-76 98-09-14

99-09-13

0 1 2 mm

scale

SOD32

UNIT bpcDEQv

mm 0.40

0.25

+ 0.05

− 0.05 0.25

0.10 0.2

1.35

1.15

1.8

1.6

1.1

0.8

2.7

2.3 0.25

0.15

0.45

0.15

DIMENSIONS (mm are the original dimensions)

Ebp

Note

1. The marking bar indicates the cathode.

max.

Plastic surface mounted package; 2 leads

vMA

(1)

2003 Aug 20 9

NXP Semiconductors Pr oduct data shee t

Very low VF MEGA

Schottky barrier rectifiers PMEG2005AEA; PMEG3005AEA;

PMEG4005AEA

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document befor e initiating or completing a design.

2. The product s ta tus of device(s) described in this do cument may have ch anged since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such informa tio n.

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reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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infringement and limitation of liability, unless explicitly

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No changes were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/0 1/pp10 Date of release: 2003 Aug 20 Document orde r number: 9397 750 11615