2SC3421
2009-12-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3421
Audio Frequency Power Amplifier Applications
Complementary to 2SA1358
Suitable for driver of 60 to 80 watts audio amplifier
High breakdown voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 120 V
Emitter-base voltage VEBO 5 V
Collector current IC 1 A
Base current IB 100 mA
Ta = 25°C 1.5
Collector power
dissipation Tc = 25°C
PC 10
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA 2-8H1A
Weight: 0.82 g (typ.)
2SC3421
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 120 V, IE = 0 100 nA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 120 V
DC current gain hFE
(Note 2) VCE = 5 V, IC = 100 mA 80 240
Collector-emitter saturation voltage VCE (sat) IC = 500 mA, IB = 50 mA 0.30 1.0 V
Base-emitter voltage VBE V
CE = 5 V, IC = 500 mA 0.78 1.0 V
Transition frequency fT V
CE = 5 V, IC = 100 mA 120 MHz
Collector output capacitance Cob V
CB = 10 V, IE = 0, f = 1 MHz 15 pF
Note 2: hFE classification O: 80 to 160, Y: 120 to 240
Marking
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
C3421 Part No. (or abbreviation code)
Characteristics indicator
Lot No.
Note 3
2SC3421
2009-12-21
3
Collector power dissipation PC (W)
Collector current IC (mA)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (mA)
Collector current IC (mA)
hFE – IC
DC current gain hFE
Collector current IC (mA)
VCE (sat) – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Collector current IC (mA)
Collector-emitter voltage VCE (V)
0
0
Common emitter
Tc = 25°C
1200
600
6 8 12 10
16
4
5
25
10
IB = 1 mA
0
7
4 2
200
400
800
1000
2
14
3
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0 40 60 100 80 20
12
0
4
2
6
(1)
(2)
120 140 160
8
10
25
10
100
Common emitter
VCE = 5 V
10
30
50
500
30 100 1000
Tc = 100°C
25
300 3
300
25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C 25
200
0.2 0.4 0.8 1.0 0.6 0
0
1.2
3 10 30 100 300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature
100
3000 IC max (pulsed)*
IC max (continuous)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
25
Common emitter
IC/IB = 10
3
1
0.01
0.05
0.1
30 100
Tc = 100°C
25
1000300 10
0.03
0.3
0.5
2SC3421
2009-12-21
4
RESTRICTIONS ON PRODUCT USE
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