31
VTB Proc ess Photodiodes VTB5051J
PRODUCT DESCRIPTION
Planar silicon photodiode in a “flat” window,
three lead TO-5 package. Chip is isolated from
the case. The third lead allows the case to be
grounded. These diodes have very high shunt
resistance and have good blue response.
PACKAGE DIMENSIONS inch (mm)
CASE 14A TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in
2
(14.8 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem per atur e: -4 0°C t o 11 0°C
Oper ati ng Temp er a t ur e: -4 0°C t o 11 0°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB5051J UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 85 130 µA
TC ISC ISC Temperature Coefficient 2850 K .12 .23 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 490 mV
TC VOC VOC Temperatur e Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 250 pA
RSH Shunt Resistance H = 0, V = 10 mV .56 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 3.0 nF
SRSensitivity 365 nm .10 A/W
λrange Spectral Application Range 320 1100 nm
λpSpectral Respo nse - Peak 920 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±50 Degrees
NEP Noise Equivalent Power 2.1 x 10-14 (Typ.)
D* Specif ic Detectivity 1.8 x 10 13 (Ty p.)
/ W
WHz⁄
cm Hz
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
