VTB Process Photodiodes VTB5051J PACKAGE DIMENSIONS inch (mm) CASE 14A TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a "flat" window, three lead TO-5 package. Chip is isolated from the case. The third lead allows the case to be grounded. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40C to 110C -40C to 110C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTB curves, pages 21-22) VTB5051J SYMBOL ISC TC ISC VOC TC VOC ID RSH CHARACTERISTIC TEST CONDITIONS UNITS Min. Typ. 85 130 Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .12 A Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .56 G .23 %/C mV mV/C 250 pA RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/C CJ Junction Capacitance H = 0, V = 0 3.0 nF SR Sensitivity 365 nm TC RSH .10 A/W range Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp. - 50% Resp. Pt. 50 Degrees NEP Noise Equivalent Power 2.1 x 10-14 (Typ.) W Hz Specific Detectivity 1.8 x 10 13 (Typ.) cm Hz / W D* 320 2 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1100 nm 920 nm 40 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 31