©2008 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
January 2008
Motion-SPMTM
FSBB15CH60C
Smart Power Module
Features
• UL Certified No.E209204(SPM27-CC package)
• Very low thermal resistance due to using DBC
• Easy PCB layout due to built in bootstrap diode
• 600V-15A 3-phase IGBT inverter bridge including control ICs
for gate driving and protection
• Divided negative dc-link terminals for inverter current sensing
applications
• Single-grounded power supply due to built-in HVIC
• Isolation rating of 2500Vrms/min.
Applications
• AC 100V ~ 253V three-phase inverter drive for small power
ac motor drives
• Home appliances applications like air conditioner and wash-
ing machine
General Description
It is an advanced motion-smart power module (Motion-SPMTM)
that Fairchild has newly developed and designed to provide
very compact and high performance ac motor drives mainly tar-
geting low-power inverter-driven application like air conditioner
and washing machine. It combines optimized circuit protection
and drive matched to low-loss IGBTs. System reliability is fur-
ther enhanced by the integrated under-voltage lock-out and
short-circuit protection. The high speed built-in HVIC provides
opto-coupler-less single-supply IGBT gate driving capability that
further reduce the overall size of the inverter system design.
Each phase current of inverter can be monitored separately due
to the divided negative dc terminals.
Figure 1.
44mm
26.8mm
Top View Bottom View
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Integrated Power Functions
• 600V-15A IGBT inverter for three-phase DC/AC power conversion (Please refer to Figure 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figures 12 and 13.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to UV (Low-side supply) and SC faults
• Input interface: 3.3/5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Figure 2.
Top View
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Pin Descriptions
Pin Number Pin Name Pin Description
1V
CC(L) Low-side Common Bias Voltage for IC and IGBTs Driving
2 COM Common Supply Ground
3IN
(UL) Signal Inp u t for Low-side U Phase
4IN
(VL) Signal Input for Low-side V Phase
5IN
(WL) Signal Input for Low-side W Phase
6V
FO Fault Output
7C
FOD Capacitor for Fault Output Duration Time Selection
8C
SC Capacitor (Low-pass Filter) for Short-Current Detection Input
9IN
(UH) Signal Input for High-side U Phase
10 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
11 VB(U) High-side Bias Voltage for U Phase IGBT Driving
12 VS(U) High-side Bias Voltage Ground for U Phase IGBT Driving
13 IN(VH) Signal Input for High-side V Phase
14 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
15 VB(V) High-side Bias Voltage for V Phase IGBT Driving
16 VS(V) High-side Bias Voltage Ground for V Phase IGBT Driving
17 IN(WH) Signal Input for High-side W Phase
18 VCC(H) High-side Common Bias Voltage for IC and IGBTs Driving
19 VB(W) High-side Bias Voltage for W Phase IGBT Driving
20 VS(W) High-side Bias Voltage Ground for W Phase IGBT Driving
21 NUNegative DC–Link Input for U Phase
22 NVNegative DC–Link Input for V Phase
23 NWNegative DC–Link Input for W Phase
24 U Output for U Phase
25 V Output for V Phase
26 W Output for W Phase
27 P Positive DC–Link Input
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Internal Equivalent Circuit and Input/Output Pins
Note:
1. Inverter low-side is composed of three IGBTs, freewheeling diodes for each IGBT and one control IC. It has gate drive and protection functions.
2. Inverter power side is composed of four inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side is composed of three IGBTs, freewheeling diodes and three drive ICs for each IGBT.
Figure 3.
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (21)
NV (22)
NW (23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W)
(19) VB(W)
(16) VS(V)
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN(VH)
(12) VS(U)
(11) VB(U)
(10) VCC(H)
(9) IN(UH)
VSL
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Absolute Maximum Ratings (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
1. The maximum junction temperature rating of the power chips integrated within the SPM is 150°C(@TC ≤ 125°C).
Control Part
Bootstrap Diode Part
Total System
Thermal Resistance
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Symbol Parameter Conditions Rating Units
VPN Supply Voltage Applied between P- NU, NV, NW450 V
VPN(Surge) Supply Voltage (Surge) Applied between P- NU, NV, NW500 V
VCES Collector-emitter Voltage 600 V
± ICEach IGBT Collector Current TC = 25°C 15 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, Under 1ms Pulse Width 30 A
PCCollector Dissipation TC = 25°C per One Chip 55 W
TJOperating Junction Temperature (Note 1) -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
VCC Control Supply Voltage Applied between VCC(H), VCC(L) - COM 20 V
VBS High-side Control Bias
Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
20 V
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH),
IN(UL), IN(VL), IN(WL) - COM -0.3~17 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3~VCC+0.3 V
IFO Fault Output Current Sink Current at VFO Pin 5 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3~VCC+0.3 V
Symbol Parameter Conditions Rating Units
VRRM Maximum Repetitive Reverse Voltage 600 V
IFForward Current TC = 25°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, Under 1ms Pulse Width 2 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Parameter Conditions Rating Units
VPN(PROT) Self Protection Supply Voltage Limit
(Short Circuit Protection Capability) VCC = VBS = 13.5 ~ 16.5V
TJ = 150°C, Non-repetitive, less than 2μs400 V
TCModule Case Operation Temperature -40°C≤ TJ ≤ 150°C, See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 150 °C
VISO Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection
Pins to heat sink plate 2500 Vrms
Symbol Parameter Conditions Min. Typ. Max. Units
Rth(j-c)Q Junction to Case Thermal
Resistance Inverter IGBT part (per 1/6 module) - - 2.27 °C/W
Rth(j-c)F Inverter FWD part (per 1/6 module) - - 3.0 °C/W
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Inverter Part
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
Control Part
Note:
4. Short-circuit current protection is functioning only at the low-sides.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Symbol Parameter Conditions Min. Typ. Max. Units
VCE(SAT) Collector-Emitter Saturation
Voltage VCC = VBS = 15V
VIN = 5V IC = 15A, TJ = 25°C - - 2.0 V
VFFWD Forward Voltage VIN = 0V IF = 15A, TJ = 25°C - - 2.2 V
HS tON Switching Times VPN = 300V, VCC = VBS = 15 V
IC = 15A
VIN = 0V ↔ 5V, Inductive Load
(Note 3)
-0.80- μs
tC(ON) -0.20- μs
tOFF -0.40- μs
tC(OFF) -0.10- μs
trr -0.10- μs
LS tON VPN = 300V, VCC = VBS = 15 V
IC = 15A
VIN = 0V ↔ 5V, Inductive Load
(Note 3)
-0.50- μs
tC(ON) -0.25- μs
tOFF -0.35- μs
tC(OFF) -0.10- μs
trr -0.10- μs
ICES Collector-Emitter
Leakage Current VCE = VCES --1mA
Symbol Parameter Conditions Min. Typ. Max. Units
IQCCL Quiescent VCC Supply
Current VCC = 15V
IN(UL, VL, WL) = 0V VCC(L) - COM - - 23 mA
IQCCH VCC = 15V
IN(UH, VH, WH) = 0V VCC(H) - COM - - 600 μA
IQBS Quiescent VBS Supply
Current VBS = 15V
IN(UH, VH, WH) = 0V VB(U) - VS(U), VB(V) -VS(V),
VB(W) - VS(W)
- - 500 μA
VFOH Fault Output Voltage VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up 4.5 - - V
VFOL VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up - - 0.8 V
VSC(ref) Short Circuit Trip Level VCC = 15V (Note 4) 0.45 0.5 0.55 V
TSD Over-temperature protec-
tion Temperature at LVIC - 160 - °C
ΔTSD Over-temperature protec-
tion hysterisis Temperature at LVIC - 5 - °C
UVCCD Supply Circuit Under-
Voltage Protection Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.4 V
UVBSD Detection Level 10 11 12 V
UVBSR Reset Level 10.5 11.5 12.5 V
tFOD Fault-out Pulse Width CFOD = 33nF (Note 5) 1.0 1.8 - ms
VIN(ON) ON Threshold Voltage Applied between IN(UH), IN(VH), IN(WH), IN(UL),
IN(VL), IN(WL) - COM 2.8 - - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Figure 4. Switching Time Definition
Switching Loss (Typical)
Figure 5. Switching Loss Charac teristics
VCE IC
VIN
tON tC(ON)
VIN(ON) 10% IC10% VCE
90% IC
100% IC
trr
100% IC
0
VCE
IC
VIN
tOFF tC(OFF)
VIN(OFF) 10% V CE 10% IC
(a) tu rn-o n (b ) tu rn -of f
0246810121416
0
100
200
300
400
500
600
700
800 SWITCHING LOSS(ON) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
TJ=25℃
TJ=150℃
SWITCHING LOSS, ESW(ON) [uJ]
COLLECTOR CURRENT, Ic [A MP ERE S ] 0246810121416
0
50
100
150
200
250
300
350
400
450
500 SWITCHING LOSS(OFF) VS. COLLECTOR CURRENT
VCE=300V
VCC=15V
VIN=5V
TJ=25℃
TJ=150℃
SWITCHING LOSS, ESW(OFF) [uJ]
COLLECTOR CURRENT, Ic [A MP ERE S ]
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Bootstrap Diode Part
Note:
6. Built in bootstrap diode includes around 15Ωresistance characteristic.
Figure 6. Built in Bootstrap Diode Characteristics
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Units
VFForward Voltage IF = 0.1A, TC = 25°C - 2.5 - V
trr Reverse Recovery Time IF = 0.1A, TC = 25°C - 80 - ns
Symbol Parameter Conditions Value Units
Min. Typ. Max.
VPN Supply Voltage Applied between P - NU, NV, NW- 300 400 V
VCC Control Supply Voltage Applied between VCC(H), VCC(L)- COM 13.5 15 16.5 V
VBS High-side Bias Voltage Applied between VB(U) - VS(U), VB(V) - VS(V),
VB(W) - VS(W)
13.0 15 18.5 V
dVCC/dt,
dVBS/dt Control supply variation -1 - 1 V/μs
tdead Blanking Time for Preventing
Arm-short For Each Input Signal 2.0 - - μs
fPWM PWM Input Signal -40°C ≤ TC ≤ 125°C, -40°C ≤ TJ ≤ 150°C - - 20 kHz
VSEN Voltage for Current Sensing Applied between NU, NV, NW - COM
(Including surge voltage) -4 4 V
0123456789101112131415
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 Built in Bootstra p Diode VF-IF Characteristic
TC=25℃
IF [A]
VF [V]
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Mechanical Characteristics and Ratings
Figure 7. Flatness Measurement Position
Package Marking and Ordering Information
Parameter Conditions Limits Units
Min. Typ. Max.
Mounting Torque Mounting Screw: - M3 Recommended 0.62N•m 0.51 0.62 0.80 N•m
Device Flatness Note Figure 5 0 - +120 μm
Weight - 15.00 - g
Device Marking Device Package Reel Size Tape Width Quantity
FSBB15CH60C FSBB15CH60C SPM27-CC - - 10
( + )
( + )
( + )
( + )
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Time Charts of SPMs Protective Function
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 8. Under-Voltage Protection (Low-side)
b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR)
b6 : Normal operation: IGBT ON and carrying current
Figure 9. Under-Voltage Protection (High-side)
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVCCR
Protection
Circuit State SET RESET
UVCCD
a1 a3
a2 a4
a6
a5
a7
Input Signal
Output Current
Fault Output Signal
Control
Supply Voltage
RESET
UVBSR
Protection
Circuit State SET RESET
UVBSD
b1 b3
b2 b4 b6
b5
High-level (no fault output)
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state
Figure 10. Short-Circuit Current Protection (Lo w-side Operation only)
Internal IGBT
Gate-Emitter Voltage
Lower arms
control input
Output Current
Sensing Voltage
of the shunt
resistance
Fault Output Signal
SC Reference Voltage
CR circuit time
constant delay
SC
Protection
circuit state SET RESET
c6 c7
c3
c2
c1
c8
c4
c5
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Note:
1) RC coupling at each input might cha nge dep ending on th e PWM control schem e used in th e applicatio n and the wiring impe dance of the app lication’ s printed cir cuit boar d. The
SPM input signal sect ion integra tes 5k Ω (typ.) pull-down resisto r. Therefore, when using an external filter ing re sistor, plea se p ay atte ntion to the signa l volt age drop at input ter -
minal.
2) The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 11. Recommended CPU I/O Interface Circuit
Note:
1) The ceramic capacitor placed between VCC-COM should be over 1uF and mounted as close to the pins of the SPM as possible.
Figure 12. Recommended Bootstrap Operation Circuit and Parame ters
CPU
COM
5V-Line
,,
IN(UL) IN(VL) IN(WL)
,,
IN(UH) IN(VH) IN(WH)
VFO
1nF
SPM
CPF= 1nF
RPF=4.7㏀
100Ω
100Ω
1nF 1nF
100Ω
15V-Line 22uF 0.1uF
1000uF 1uF
One-Leg Diagram of SPM
Inverter
Output
P
N
These Values depend on PWM Control Algorithm
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
OUT
VSL
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Note:
1) To avoid malfunction, the wiring of each i nput should be as short as possible. (less than 2-3cm)
2) By virtue of integrating an application specific type HVIC inside the SPM, direct coupling to CPU terminals without any opto-coupler or transformer isolation is possible.
3) VFO output is open collector typ e. This signa l line should be pu lled up to the po sitive side of the 5V powe r supp ly with a pprox ima tely 4.7kΩ resist ance. Plea se refer to Figure11.
4) CSP15 of around 7 times larger than bootstrap capacitor CBS is recommended.
5) VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms
(typ.)) Please refer to the note 5 for calculation method.
6) Input signal is High-Active type. There is a 5kΩ resistor inside the IC to pull down each input signal line to GND. RC coupling circuits should be adopted for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50~150ns. CPS should not be less than 1nF.(Recommended RS=100Ω, CPS=1nF)
7) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.
8) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5~2μs.
9) Each ca pacitor should be mounted as close to the pins of the SPM as possible.
10) To pr event su rge destru ction, the wiri ng between the smoo thing c apacitor an d the P&GN D pins sh ould be as short as possibl e. The use of a high frequency non-inductive
capacitor of around 0.1~0.22μF between the P&GND pins is recommended.
11) Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
12) CSPC15 should be over 1μF and mounted as close to the pins of the SPM as possible.
Figure 13. Typical Application Circuit
Fault
15V line
CBS CBSC
CBS CBSC
CBS CBSC
CSP15 CSPC15
CFOD
5V line
RPF
CBPF
RS
M
Vdc
CDCS
Gating U H
Gating VH
Gating WH
Gating WL
Gatin g V L
Gating U L
CPF
C
P
U
RFU
RFV
RFW
RSU
RSV
RSW
CFU
CFV
CFW
W-Phase Current
V-Phase Current
U-Phase Current
RF
COM
VCC
IN(UL)
IN(VL)
IN(WL)
VFO
C(FOD)
C(SC)
OUT(UL)
OUT(VL)
OUT(WL)
NU (21)
NV (22)
NW (23)
U (24)
V (25)
W (26)
P (27)
(20) VS(W)
(19) VB(W)
(16) VS(V)
(15) VB(V)
(8) CSC
(7) CFOD
(6) VFO
(5) IN(WL)
(4) IN(VL)
(3) IN(UL)
(2) COM
(1) VCC(L)
VCC
VB
OUT
COM VS
IN
VB
VS
OUT
IN
COM
VCC
VCC
VB
OUT
COM VS
IN
(18) VCC(H)
(17) IN(WH)
(14) VCC(H)
(13) IN(VH)
(12) VS(U)
(11) VB(U)
(10) VCC(H)
(9) IN (UH)
Input Signal for
Short-Circuit Protection
CSC
VSL
RS
RS
RS
RS
RS
RS
CPS
CPS
CPS
CPS CPS CPS
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Detailed Package Outline Drawings
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Detailed Package Outline Drawings (Continued)
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FSBB15CH60C Rev. D
FSBB15CH60C Smart Power Module
Detailed Package Outline Drawings (Continued)
Rev. I28
TRADEMARKS
The following are registered and unregistered trademar ks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUM E ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRI BED HEREIN; NEITHER DOES IT CONVEY ANY LIC ENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroPak™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
PDP-SPM™
Power220®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
The Power Franchise®
™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete Not In Production This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
