LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 1 of 6
2N3439U4 thru 2N3440U4
Available on
commercial
versions
NPN LOW POWER SI L ICO N
TRANSISTOR
Qualified per MIL-PRF-19500/368
Qualified Levels:
JAN, JANT X, JANTXV
and JANS*
(*2N3440U4 only)
DESCRIPTION
This fam ily of 2N 34 39U4 thr o ug h 2N 3 44 0U 4 high-frequenc y, ep i taxial pl anar trans istors
fe ature low saturat ion voltage. Th e U4 package is hermetic ally sealed and pr ovides a lo w
profile for mi ni mizing boar d height. Thes e devices are al so available in U A, TO-5 and TO-39
packag in g. Mi cros emi als o offers numerous other trans istor p r oducts to meet higher and
lower power ratings with various switching speed requirem ents in both through-hole and
surface-mount pac kages.
U4 Package
Also available in:
UA package
(sur face mount)
2N3439UA – 2N3440UA
TO-5 package
(long leaded)
2N3439L – 2N3440L
TO-39 pac kage
(leaded)
2N3439 – 2N3440
Important: For the latest information, v isit our website http://www.microsemi.com.
FEATURES
• JEDEC registered 2N3439U4 through 2N3440U4 serie s.
• RoHS compliant versions avai lable (commercial grade only).
• Vce(sat) = 0.5 V @ Ic = 50 mA.
• Turn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA.
• Turn-Off time toff = 10 µs max @ IC = 20 mA, IB1 = -IB2 = 2.0 mA.
APPLICATI ONS / BENEFITS
• General purpose transistors for medium power applications requiring high frequency switching and
low package profile.
• Military and other high-reliability applications.
MAXI MUM RATING S @ T
C
= +25°C unless otherwise noted.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters / Test Conditions Symbol 2N3439U4 2N3440U4 Unit
Collector-Emitter Voltage VCEO 350 250 V
Collector-Base Voltage V
CBO
450 300 V
Emitter-Base Voltage VEBO 7.0 V
Collector Current IC 1.0 A
Total P ower Dissipation
@ T A = +25 °C
(1)
@ T C = +25 °C (2) PD 0.8
5.0 W
Operating & Storage J unction Temperature Range TJ, Tstg -65 to +200 °C
Notes: 1. Derate linearly @ 4.57 mW/°C for TA > +25 °C.
2. Derate linearly @ 28.5 mW/°C for TC > +25 °C.
LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 2 of 6
2N3439U4 thru 2N3440U4
M ECHANICAL and PACKAGI NG
• CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel pl ated kovar lid.
• TERMINALS: Gold over nickel plated surfac e mount terminations.
• MARKING: Part number, date code, manufacturer’s ID.
• POLARITY: See package dim ensions.
• TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
• WEIGHT: .125 grams (125 milligrams).
• See Package Dimensions on last page.
PART NOMENCLATURE
JAN 2N3439 U4 (e3)
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS* = JANS Level
(*2N3440U4 only)
Blank = commercial
JEDEC type number
(see Electrical Characteristics
RoHS Compliance
e3 = RoHS Compliant (available
on commercial grade only)
Blank = non-RoHS Compliant
Surfac e Mount Package type
SYMBOLS & DEFINITIONS
Symbol
Definition
Cibo Common-base open-ci r cuit input capaci tance.
Cobo Common-base open-ci r cuit ou tput capac itance.
ICEO Collector c utoff current, base op en.
ICEX Collector cutoff current, circuit between bas e and emi tter.
IEBO
Emitter cutoff current, coll ect or open.
hFE
Common-emitter static forward curr ent t r ansfer ratio.
VBE
Base-emitter vo l tage, d c.
VCE
Collector-emi tter v ol tage, d c.
VCEO
Collector-emi tter v ol tage, b ase open .
VCBO
Collector-emitt er voltage, emit ter open.
VEB Emitter-bas e voltag e, dc .
V
EBO
Emitter-base voltag e, c ol lector open.
LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 3 of 6
2N3439U4 thru 2N3440U4
ELECTRICAL CHAR ACTERISTICS
@ TA = +25°C, unless otherwise noted.
OFF CHARACTE RISTICS
Paramete r s / Test Conditions
Symbol
Min.
Max.
Unit
Collector-Emitt er Breakdown Voltage
IC = 10 mA
V(BR)CEO
350
250
V
RBB1 = 470 Ω; VBB1 = 6 V
L = 25 mH (mi n); f = 30 – 60 Hz 2N3439U4
2N3440U4
Collector-Emitt er Cu toff Current
ICEO
2.0
2.0 µA
VCE = 300 V
VCE = 200 V 2N3439U4
2N3440U4
Emitter-Bas e C utoff Current
VEB = 7.0 V
IEBO 10 µA
Collector-Emitt er Cu toff Current
ICEX
5.0
5.0 µA
VCE = 450 V, VBE = -1.5 V
VCE = 300 V, VBE = -1.5 V 2N3439U4
2N3440U4
Collector-Base C utoff Current
ICBO
2.0
2.0
5.0
5.0
µA
V
CB
= 360 V
VCB = 250 V
VCB = 450 V
VCB = 300 V
2N3439U4
2N3440U4
2N3439U4
2N3440U4
ON CHARACTERISTICS (1)
Paramete r s / Test Conditions Symbol Min. Max. Unit
Forward-Current Transfer R atio
IC = 20 mA, VCE = 10 V
IC = 2.0 mA, VCE = 10 V
IC = 0.2 mA, VCE = 10 V
hFE
40
30
10
160
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 4.0 mA VCE(sat) 0.5 V
Base-E mit ter Saturation Voltag e
IC = 50 mA, IB = 4.0 mA
VBE(sat) 1.3 V
DYNAMI C CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Magnitude of Common Emi tter Small -Signa l Shor t-
Circuit Forward Curren t Trans fe r R at i o
IC = 10 mA, VCE = 10 V, f = 5.0 MHz |hfe| 3.0 15
Forward Current Tr ansfer Rat io
IC = 5.0 mA, VCE = 10V , f = 1.0 kHz hfe 25
O utput Cap acitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 10 pF
I nput Capac i tanc e
VCB = 5.0 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 75 pF
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 4 of 6
2N3439U4 thru 2N3440U4
ELECTRICAL CHAR ACTERISTICS @
TA = +25°C, unless otherwise noted. (continued)
SWIT CHING CHARACTERISTICS
Paramete r s / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 200 V; IC = 20 mA, IB1 = 2.0 mA ton
1.0 µs
Turn-O ff Tim e
VCC = 200 V; IC = 20 mA, IB1 = -IB2 = 2.0 mA toff
10 µs
SAFE OPERATING AREA
(See graph bel ow and r eferenc e MIL-STD-750, metho d 30 53 )
DC Te sts
TC = +2 5 °C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 V, I C = 1.0 A
B oth Typ es
Test 2
VCE = 350 V, IC = 14 mA
2N3439U4
Test 3
VCE = 250 V, IC = 20 mA
2N3440U4
VCE - COLL ECTOR TO EMITTER VOLTAGE (V)
Maximum Safe Operating Area (continuous dc)
I
C
– COLLECTOR CURRENT (mA)
LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 5 of 6
2N3439U4 thru 2N3440U4
GRAPHS
TC (oC) (Case)
FIGURE 1
Temperature-P ower Der at ing Curve
NOTES: Thermal Resistance Junction to Case = 8.0 oC/W
Ma x F inish-All oy Temp = 175 oC
TIME (s)
FIGURE 2
Maximum Th er mal Imped ance
NOTE: TC = +25 °C, Thermal Resistance Rθ JC = 8.0 °C/W
dc Operation Maximum Rating (W)
THETA (oC/W)
LDS-0022-2, Rev. 1 (111617) ©2011 Microsemi Corporation Page 6 of 6
2N3439U4 thru 2N3440U4
PACKAGE DIM ENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeter equivalents are given for general information
only.
3. In accordance with ASME Y14.5M, diameters are
equivalent to Φx symbology.
Dimensions
Ltr
Inches
Millimeters
Min
Max
Min
Max
BL
0.215
0.225
5.46
5.72
BW
0.145
0.155
3.68
3.94
CH
0.049
0.075
1.24
1.91
LH
0.020
0.51
LW1
0.135
0.145
3.43
3.68
LW2
0.047
0.057
1.19
1.45
LL1 0.085 0.125 2.16 3.17
LL2 0.045 0.075 1.14 1.90
LS1 0.070 0.095 1.78 2.41
LS2 0.035 0.048 0.89 1.21
Q1
0.030
0.070
0.76
1.78
Q2
0.020
0.035
0.51
0.89
TERMINAL
1
COLLECTOR
2
BASE
3
EMITTER